TWI615984B - 氧化物半導體基板及肖特基能障二極體 - Google Patents
氧化物半導體基板及肖特基能障二極體 Download PDFInfo
- Publication number
- TWI615984B TWI615984B TW103128165A TW103128165A TWI615984B TW I615984 B TWI615984 B TW I615984B TW 103128165 A TW103128165 A TW 103128165A TW 103128165 A TW103128165 A TW 103128165A TW I615984 B TWI615984 B TW I615984B
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- Prior art keywords
- oxide semiconductor
- schottky barrier
- barrier diode
- substrate
- semiconductor layer
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 167
- 239000000758 substrate Substances 0.000 title claims description 99
- 230000004888 barrier function Effects 0.000 title claims description 88
- 239000010408 film Substances 0.000 claims description 78
- 229910052751 metal Inorganic materials 0.000 claims description 41
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 29
- 229910052732 germanium Inorganic materials 0.000 claims description 26
- 229910052738 indium Inorganic materials 0.000 claims description 21
- 239000010409 thin film Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 16
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 229910052772 Samarium Inorganic materials 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 239000010410 layer Substances 0.000 claims 21
- 239000002356 single layer Substances 0.000 claims 2
- 229910052789 astatine Inorganic materials 0.000 claims 1
- 230000001568 sexual effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 31
- 238000004544 sputter deposition Methods 0.000 description 21
- 230000015556 catabolic process Effects 0.000 description 16
- 230000005684 electric field Effects 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 10
- 238000000137 annealing Methods 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005477 sputtering target Methods 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910010038 TiAl Inorganic materials 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/402—Amorphous materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- Electrodes Of Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013169966 | 2013-08-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201515242A TW201515242A (zh) | 2015-04-16 |
| TWI615984B true TWI615984B (zh) | 2018-02-21 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103128165A TWI615984B (zh) | 2013-08-19 | 2014-08-15 | 氧化物半導體基板及肖特基能障二極體 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9691910B2 (enExample) |
| JP (3) | JPWO2015025499A1 (enExample) |
| KR (1) | KR102226985B1 (enExample) |
| CN (2) | CN105453272B (enExample) |
| TW (1) | TWI615984B (enExample) |
| WO (1) | WO2015025499A1 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6976858B2 (ja) * | 2015-12-25 | 2021-12-08 | 出光興産株式会社 | 積層体 |
| JP6975530B2 (ja) | 2015-12-25 | 2021-12-01 | 出光興産株式会社 | 半導体素子及びそれを用いた電気機器 |
| WO2017110940A1 (ja) * | 2015-12-25 | 2017-06-29 | 出光興産株式会社 | 半導体素子及びそれを用いた電気機器 |
| JP6749939B2 (ja) * | 2015-12-25 | 2020-09-02 | 出光興産株式会社 | 積層体 |
| CN107039439B (zh) * | 2016-02-04 | 2020-03-10 | 中芯国际集成电路制造(上海)有限公司 | 存储器及其形成方法 |
| JP6770331B2 (ja) * | 2016-05-02 | 2020-10-14 | ローム株式会社 | 電子部品およびその製造方法 |
| US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
| CN109863607A (zh) | 2016-10-11 | 2019-06-07 | 出光兴产株式会社 | 结构物、该结构物的制造方法、半导体元件以及电子电路 |
| JP2018137394A (ja) * | 2017-02-23 | 2018-08-30 | トヨタ自動車株式会社 | 半導体装置の製造方法 |
| TWI783003B (zh) * | 2017-07-08 | 2022-11-11 | 日商Ｆｌｏｓｆｉａ股份有限公司 | 半導體裝置 |
| JP6977465B2 (ja) * | 2017-10-06 | 2021-12-08 | 株式会社デンソー | 半導体装置の製造方法 |
| GB2569196B (en) | 2017-12-11 | 2022-04-20 | Pragmatic Printing Ltd | Schottky diode |
| US11917919B2 (en) * | 2019-12-13 | 2024-02-27 | Denso Corporation | Electret |
| JP7638125B2 (ja) | 2021-03-25 | 2025-03-03 | エヌ・ティ・ティ・コミュニケーションズ株式会社 | 医療システム及びコンピュータープログラム |
| CN117954504A (zh) * | 2022-10-19 | 2024-04-30 | 广州华瑞升阳投资有限公司 | 一种肖特基势垒二极管 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200915579A (en) * | 2007-09-10 | 2009-04-01 | Idemitsu Kosan Co | Thin film transistor |
| TW201321243A (zh) * | 2011-10-11 | 2013-06-01 | Bruce B Roesner | 車輛之通信狀態 |
| TW201330254A (zh) * | 2011-08-18 | 2013-07-16 | 茂力科技股份有限公司 | 橫向雙擴散金屬氧化物半導體場效電晶體及其製造方法 |
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| US4782302A (en) * | 1986-10-31 | 1988-11-01 | The United States Of America As Represented By The United States Department Of Energy | Detector and energy analyzer for energetic-hydrogen in beams and plasmas |
| JP2702279B2 (ja) * | 1990-11-30 | 1998-01-21 | 新コスモス電機株式会社 | ガス検知素子 |
| JPH0536975A (ja) | 1991-03-07 | 1993-02-12 | Sumitomo Metal Ind Ltd | シヨツトキーバリアダイオード素子 |
| JPH04302173A (ja) * | 1991-03-29 | 1992-10-26 | Japan Synthetic Rubber Co Ltd | 薄膜ダイオード |
| JPH0897441A (ja) | 1994-09-26 | 1996-04-12 | Fuji Electric Co Ltd | 炭化けい素ショットキーダイオードの製造方法 |
| US20020179957A1 (en) * | 2001-05-29 | 2002-12-05 | Motorola, Inc. | Structure and method for fabricating high Q varactor diodes |
| JP2004022878A (ja) | 2002-06-18 | 2004-01-22 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| JP2005072367A (ja) * | 2003-08-26 | 2005-03-17 | Nippon Oil Corp | 光電変換素子 |
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| CN101057339B (zh) * | 2004-11-10 | 2012-12-26 | 佳能株式会社 | 无定形氧化物和场效应晶体管 |
| US20090090914A1 (en) * | 2005-11-18 | 2009-04-09 | Koki Yano | Semiconductor thin film, method for producing the same, and thin film transistor |
| KR100723420B1 (ko) * | 2006-02-20 | 2007-05-30 | 삼성전자주식회사 | 비정질 합금 산화층을 포함하는 비휘발성 메모리 소자 |
| JP2007243080A (ja) * | 2006-03-13 | 2007-09-20 | Fuji Electric Holdings Co Ltd | 半導体装置およびその製造方法 |
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| JP4929882B2 (ja) | 2006-07-11 | 2012-05-09 | 富士電機株式会社 | 半導体装置 |
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2014
- 2014-08-08 KR KR1020167004121A patent/KR102226985B1/ko active Active
- 2014-08-08 WO PCT/JP2014/004153 patent/WO2015025499A1/ja not_active Ceased
- 2014-08-08 US US14/912,815 patent/US9691910B2/en active Active
- 2014-08-08 CN CN201480045490.5A patent/CN105453272B/zh active Active
- 2014-08-08 CN CN202010532733.5A patent/CN111668315B/zh active Active
- 2014-08-08 JP JP2015532701A patent/JPWO2015025499A1/ja active Pending
- 2014-08-15 TW TW103128165A patent/TWI615984B/zh active
-
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- 2017-05-25 US US15/605,779 patent/US11769840B2/en active Active
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- 2019-02-22 JP JP2019031008A patent/JP6989545B2/ja active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102226985B1 (ko) | 2021-03-11 |
| US9691910B2 (en) | 2017-06-27 |
| US11769840B2 (en) | 2023-09-26 |
| CN111668315A (zh) | 2020-09-15 |
| JP2019080084A (ja) | 2019-05-23 |
| KR20160043967A (ko) | 2016-04-22 |
| CN105453272B (zh) | 2020-08-21 |
| CN105453272A (zh) | 2016-03-30 |
| CN111668315B (zh) | 2023-09-12 |
| US20160197202A1 (en) | 2016-07-07 |
| JP2021052203A (ja) | 2021-04-01 |
| JP7084465B2 (ja) | 2022-06-14 |
| JPWO2015025499A1 (ja) | 2017-03-02 |
| WO2015025499A1 (ja) | 2015-02-26 |
| JP6989545B2 (ja) | 2022-01-05 |
| US20170263786A1 (en) | 2017-09-14 |
| TW201515242A (zh) | 2015-04-16 |
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