KR101893904B1 - 반도체 기억 장치 - Google Patents

반도체 기억 장치 Download PDF

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Publication number
KR101893904B1
KR101893904B1 KR1020177033130A KR20177033130A KR101893904B1 KR 101893904 B1 KR101893904 B1 KR 101893904B1 KR 1020177033130 A KR1020177033130 A KR 1020177033130A KR 20177033130 A KR20177033130 A KR 20177033130A KR 101893904 B1 KR101893904 B1 KR 101893904B1
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South Korea
Prior art keywords
transistor
potential
oxide semiconductor
gate
insulating layer
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Korean (ko)
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KR20170129287A (ko
Inventor
토시히코 사이토
야스유키 타카하시
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • H01L27/112—
    • H01L27/11521—
    • H01L27/11524—
    • H01L27/1225—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • H10B20/25—One-time programmable ROM [OTPROM] devices, e.g. using electrically-fusible links
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/26—Floating gate memory which is adapted to be one-time programmable [OTP], e.g. containing multiple OTP blocks permitting limited update ability
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020177033130A 2010-01-29 2010-12-28 반도체 기억 장치 Active KR101893904B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010019386 2010-01-29
JPJP-P-2010-019386 2010-01-29
PCT/JP2010/073903 WO2011093003A1 (en) 2010-01-29 2010-12-28 Semiconductor memory device

Related Parent Applications (1)

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KR1020127022100A Division KR101800850B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187024377A Division KR101948707B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치

Publications (2)

Publication Number Publication Date
KR20170129287A KR20170129287A (ko) 2017-11-24
KR101893904B1 true KR101893904B1 (ko) 2018-08-31

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KR1020177033130A Active KR101893904B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치
KR1020187024377A Active KR101948707B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치
KR1020127022100A Active KR101800850B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치
KR1020137013992A Expired - Fee Related KR101299256B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치

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KR1020187024377A Active KR101948707B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치
KR1020127022100A Active KR101800850B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치
KR1020137013992A Expired - Fee Related KR101299256B1 (ko) 2010-01-29 2010-12-28 반도체 기억 장치

Country Status (5)

Country Link
US (1) US8507907B2 (enExample)
JP (13) JP2011176294A (enExample)
KR (4) KR101893904B1 (enExample)
TW (1) TWI538169B (enExample)
WO (1) WO2011093003A1 (enExample)

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KR101862823B1 (ko) 2010-02-05 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 구동 방법
KR101822962B1 (ko) 2010-02-05 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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