KR101634482B1 - 박막 트랜지스터의 제조 방법 - Google Patents

박막 트랜지스터의 제조 방법 Download PDF

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KR101634482B1
KR101634482B1 KR1020147035502A KR20147035502A KR101634482B1 KR 101634482 B1 KR101634482 B1 KR 101634482B1 KR 1020147035502 A KR1020147035502 A KR 1020147035502A KR 20147035502 A KR20147035502 A KR 20147035502A KR 101634482 B1 KR101634482 B1 KR 101634482B1
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oxide semiconductor
semiconductor layer
thin film
film transistor
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KR20150021051A (ko
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마사시 오노
마사히로 다카타
도시야 이데우에
아츠시 다나카
마사유키 스즈키
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후지필름 가부시키가이샤
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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KR1020147035502A 2012-06-20 2013-06-04 박막 트랜지스터의 제조 방법 Active KR101634482B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-139187 2012-06-20
JP2012139187A JP5972065B2 (ja) 2012-06-20 2012-06-20 薄膜トランジスタの製造方法
PCT/JP2013/065489 WO2013190992A1 (ja) 2012-06-20 2013-06-04 薄膜トランジスタの製造方法

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KR20150021051A KR20150021051A (ko) 2015-02-27
KR101634482B1 true KR101634482B1 (ko) 2016-07-08

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US (1) US9673048B2 (https=)
JP (1) JP5972065B2 (https=)
KR (1) KR101634482B1 (https=)
TW (1) TWI613826B (https=)
WO (1) WO2013190992A1 (https=)

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