KR101553554B1 - 실리콘 질화물 전하 트랩 층을 갖는 비-휘발성 메모리 - Google Patents

실리콘 질화물 전하 트랩 층을 갖는 비-휘발성 메모리 Download PDF

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KR101553554B1
KR101553554B1 KR1020117011380A KR20117011380A KR101553554B1 KR 101553554 B1 KR101553554 B1 KR 101553554B1 KR 1020117011380 A KR1020117011380 A KR 1020117011380A KR 20117011380 A KR20117011380 A KR 20117011380A KR 101553554 B1 KR101553554 B1 KR 101553554B1
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silicon nitride
nitride layer
forming
flash memory
memory device
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KR20110086090A (ko
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미하엘라 발시누
블라디미르 주브코브
리-쿤 시아
아티프 노리
레자 아르가바니
데렉 알. 위티
아미르 알-바야티
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어플라이드 머티어리얼스, 인코포레이티드
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  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Volatile Memory (AREA)
KR1020117011380A 2008-10-21 2009-10-21 실리콘 질화물 전하 트랩 층을 갖는 비-휘발성 메모리 Active KR101553554B1 (ko)

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Application Number Priority Date Filing Date Title
US12/255,617 2008-10-21
US12/255,617 US8252653B2 (en) 2008-10-21 2008-10-21 Method of forming a non-volatile memory having a silicon nitride charge trap layer

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KR20110086090A KR20110086090A (ko) 2011-07-27
KR101553554B1 true KR101553554B1 (ko) 2015-09-17

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US (3) US8252653B2 (https=)
JP (1) JP2012506640A (https=)
KR (1) KR101553554B1 (https=)
CN (2) CN102197483A (https=)
TW (1) TW201025513A (https=)
WO (1) WO2010048236A2 (https=)

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St.27 status event code: A-4-4-P10-P22-nap-X000