KR101363826B1 - Ⅲ 족 나이트라이드계 반도체 디바이스 - Google Patents

Ⅲ 족 나이트라이드계 반도체 디바이스 Download PDF

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Publication number
KR101363826B1
KR101363826B1 KR1020137005591A KR20137005591A KR101363826B1 KR 101363826 B1 KR101363826 B1 KR 101363826B1 KR 1020137005591 A KR1020137005591 A KR 1020137005591A KR 20137005591 A KR20137005591 A KR 20137005591A KR 101363826 B1 KR101363826 B1 KR 101363826B1
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South Korea
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layer
group iii
iii nitride
active region
light emitting
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Korean (ko)
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KR20130038415A (ko
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마이클 존 버그만
데이비드 토드 에머슨
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크리 인코포레이티드
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020137005591A 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스 Expired - Lifetime KR101363826B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/899,791 US7692182B2 (en) 2001-05-30 2004-07-27 Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US10/899,791 2004-07-27
PCT/US2005/022597 WO2006023060A2 (en) 2004-07-27 2005-06-24 Group iii nitride based quantum well light emitting device structures with an indium containing capping structure

Related Parent Applications (1)

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KR1020127003236A Division KR20120017473A (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스

Publications (2)

Publication Number Publication Date
KR20130038415A KR20130038415A (ko) 2013-04-17
KR101363826B1 true KR101363826B1 (ko) 2014-02-17

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KR1020077001904A Expired - Lifetime KR101236063B1 (ko) 2004-07-27 2005-06-24 인듐을 포함하는 캐핑 구조를 갖는 ⅲ 족 나이트라이드계 양자 우물 발광 소자 구조
KR1020127003236A Ceased KR20120017473A (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스
KR1020137005591A Expired - Lifetime KR101363826B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스
KR1020117021897A Expired - Lifetime KR101388369B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 발광 다이오드

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KR1020077001904A Expired - Lifetime KR101236063B1 (ko) 2004-07-27 2005-06-24 인듐을 포함하는 캐핑 구조를 갖는 ⅲ 족 나이트라이드계 양자 우물 발광 소자 구조
KR1020127003236A Ceased KR20120017473A (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 반도체 디바이스

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KR1020117021897A Expired - Lifetime KR101388369B1 (ko) 2004-07-27 2005-06-24 Ⅲ 족 나이트라이드계 발광 다이오드

Country Status (8)

Country Link
US (1) US7692182B2 (enExample)
EP (5) EP2259341B1 (enExample)
JP (2) JP2008508720A (enExample)
KR (4) KR101236063B1 (enExample)
CN (1) CN101006590A (enExample)
CA (1) CA2567739C (enExample)
TW (2) TWI394288B (enExample)
WO (1) WO2006023060A2 (enExample)

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