KR101199533B1 - 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 - Google Patents

식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 Download PDF

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KR101199533B1
KR101199533B1 KR1020050054015A KR20050054015A KR101199533B1 KR 101199533 B1 KR101199533 B1 KR 101199533B1 KR 1020050054015 A KR1020050054015 A KR 1020050054015A KR 20050054015 A KR20050054015 A KR 20050054015A KR 101199533 B1 KR101199533 B1 KR 101199533B1
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South Korea
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layer
molybdenum
etching
weight
copper
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Expired - Lifetime
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KR1020050054015A
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Korean (ko)
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KR20060134380A (ko
Inventor
박홍식
김시열
정종현
신원석
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삼성디스플레이 주식회사
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Priority to KR1020050054015A priority Critical patent/KR101199533B1/ko
Priority to TW095119159A priority patent/TWI390018B/zh
Priority to JP2006163441A priority patent/JP5111790B2/ja
Priority to CN2006100864678A priority patent/CN1884618B/zh
Priority to US11/473,607 priority patent/US7943519B2/en
Publication of KR20060134380A publication Critical patent/KR20060134380A/ko
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Publication of KR101199533B1 publication Critical patent/KR101199533B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/26—Acidic compositions for etching refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
KR1020050054015A 2005-06-22 2005-06-22 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 Expired - Lifetime KR101199533B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020050054015A KR101199533B1 (ko) 2005-06-22 2005-06-22 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
TW095119159A TWI390018B (zh) 2005-06-22 2006-05-30 蝕刻劑，使用該蝕刻劑製造互連線的方法，以及使用該蝕刻劑製造薄膜電晶體基材的方法
JP2006163441A JP5111790B2 (ja) 2005-06-22 2006-06-13 エッチング液及びこれを用いた配線形成方法
CN2006100864678A CN1884618B (zh) 2005-06-22 2006-06-21 蚀刻剂及用其制造互连线和薄膜晶体管基板的方法
US11/473,607 US7943519B2 (en) 2005-06-22 2006-06-22 Etchant, method for fabricating interconnection line using the etchant, and method for fabricating thin film transistor substrate using the etchant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050054015A KR101199533B1 (ko) 2005-06-22 2005-06-22 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법

Publications (2)

Publication Number Publication Date
KR20060134380A KR20060134380A (ko) 2006-12-28
KR101199533B1 true KR101199533B1 (ko) 2012-11-09

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KR1020050054015A Expired - Lifetime KR101199533B1 (ko) 2005-06-22 2005-06-22 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법

Country Status (5)

Country Link
US (1) US7943519B2 (enExample)
JP (1) JP5111790B2 (enExample)
KR (1) KR101199533B1 (enExample)
CN (1) CN1884618B (enExample)
TW (1) TWI390018B (enExample)

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KR20110046992A (ko) * 2009-10-29 2011-05-06 동우 화인켐 주식회사 식각액 조성물
CN102696097B (zh) * 2009-12-25 2015-08-05 三菱瓦斯化学株式会社 蚀刻液及使用其的半导体装置的制造方法
KR20110123025A (ko) * 2010-05-06 2011-11-14 삼성전자주식회사 금속 배선 식각액 및 이를 이용한 금속 배선 형성 방법
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KR101951044B1 (ko) * 2011-08-04 2019-02-21 동우 화인켐 주식회사 액정표시장치용 어레이 기판의 제조방법
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KR100505328B1 (ko) * 2002-12-12 2005-07-29 엘지.필립스 엘시디 주식회사 구리 몰리브덴막에서 몰리브덴 잔사를 제거할 수 있는식각용액 및 그 식각 방법
KR100960687B1 (ko) * 2003-06-24 2010-06-01 엘지디스플레이 주식회사 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액
TWI282377B (en) * 2003-07-25 2007-06-11 Mec Co Ltd Etchant, replenishment solution and method for producing copper wiring using the same
JP4965253B2 (ja) * 2003-08-08 2012-07-04 インテグリス・インコーポレーテッド 回転可能ベース上に鋳造されるモノリシック多孔性パッドを作製する方法および材料
JP4431860B2 (ja) * 2003-10-30 2010-03-17 三菱瓦斯化学株式会社 銅および銅合金の表面処理剤
TWI258048B (en) * 2004-06-15 2006-07-11 Taiwan Tft Lcd Ass Structure of TFT electrode for preventing metal layer diffusion and manufacturing method thereof
KR20060062913A (ko) * 2004-12-06 2006-06-12 삼성전자주식회사 표시 장치용 배선과 상기 배선을 포함하는 박막트랜지스터 표시판 및 그 제조 방법
KR20070049278A (ko) * 2005-11-08 2007-05-11 삼성전자주식회사 배선, 이를 포함하는 박막 트랜지스터 기판과 그 제조 방법
JP4902299B2 (ja) * 2006-09-11 2012-03-21 三星電子株式会社 表示装置の製造方法

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US20060292888A1 (en) 2006-12-28
CN1884618A (zh) 2006-12-27
CN1884618B (zh) 2011-04-06
TW200702427A (en) 2007-01-16
US7943519B2 (en) 2011-05-17
JP5111790B2 (ja) 2013-01-09
TWI390018B (zh) 2013-03-21
KR20060134380A (ko) 2006-12-28
JP2007005790A (ja) 2007-01-11

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