KR101140939B1 - 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드 - Google Patents

패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드 Download PDF

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Publication number
KR101140939B1
KR101140939B1 KR1020097026103A KR20097026103A KR101140939B1 KR 101140939 B1 KR101140939 B1 KR 101140939B1 KR 1020097026103 A KR1020097026103 A KR 1020097026103A KR 20097026103 A KR20097026103 A KR 20097026103A KR 101140939 B1 KR101140939 B1 KR 101140939B1
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South Korea
Prior art keywords
pattern
layer
inversion
forming
resist
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Korean (ko)
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KR20100011975A (ko
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아쯔노리 데라사끼
쥰이찌 세끼
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캐논 가부시끼가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
KR1020097026103A 2007-05-23 2008-05-22 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드 Expired - Fee Related KR101140939B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2007-137234 2007-05-23
JP2007137234A JP5144127B2 (ja) 2007-05-23 2007-05-23 ナノインプリント用のモールドの製造方法
PCT/JP2008/059862 WO2008146869A2 (en) 2007-05-23 2008-05-22 Pattern forming method, pattern or mold formed thereby

Publications (2)

Publication Number Publication Date
KR20100011975A KR20100011975A (ko) 2010-02-03
KR101140939B1 true KR101140939B1 (ko) 2012-05-03

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KR1020097026103A Expired - Fee Related KR101140939B1 (ko) 2007-05-23 2008-05-22 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드

Country Status (5)

Country Link
US (1) US7960090B2 (https=)
JP (1) JP5144127B2 (https=)
KR (1) KR101140939B1 (https=)
CN (1) CN101681095B (https=)
WO (1) WO2008146869A2 (https=)

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JP5067848B2 (ja) * 2007-07-31 2012-11-07 キヤノン株式会社 パターンの形成方法
CN102037409B (zh) * 2008-05-23 2013-12-11 康奈尔大学 在电子和电气设备中使用的有机材料的正交工艺
JP5261165B2 (ja) 2008-12-25 2013-08-14 チェイル インダストリーズ インコーポレイテッド 微細パターンの形成方法
EP2230207A1 (fr) * 2009-03-13 2010-09-22 Nivarox-FAR S.A. Moule pour galvanoplastie et son procédé de fabrication
EP2230206B1 (fr) * 2009-03-13 2013-07-17 Nivarox-FAR S.A. Moule pour galvanoplastie et son procédé de fabrication
JP5282920B2 (ja) * 2009-04-24 2013-09-04 日産化学工業株式会社 パターン反転膜形成用組成物及び反転パターン形成方法
JP5428636B2 (ja) * 2009-06-17 2014-02-26 住友電気工業株式会社 回折格子の形成方法
JP2011088340A (ja) * 2009-10-22 2011-05-06 Toshiba Corp テンプレート及びパターン形成方法
KR101108162B1 (ko) * 2010-01-11 2012-01-31 서울대학교산학협력단 고해상도 유기 박막 패턴 형성 방법
CN102478764B (zh) * 2010-11-30 2013-08-07 中芯国际集成电路制造(北京)有限公司 双重图形化方法
JP2012234057A (ja) * 2011-05-02 2012-11-29 Elpida Memory Inc フォトマスクおよび半導体装置
JP5743718B2 (ja) * 2011-05-31 2015-07-01 キヤノン株式会社 成形型の製造方法及び光学素子
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JP6028378B2 (ja) * 2011-09-27 2016-11-16 凸版印刷株式会社 フォトマスクの製造方法
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JP6028384B2 (ja) * 2012-05-07 2016-11-16 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
JP6019967B2 (ja) * 2012-09-10 2016-11-02 大日本印刷株式会社 パターン形成方法
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US9586343B2 (en) 2012-12-28 2017-03-07 Dai Nippon Printing Co., Ltd. Method for producing nanoimprint mold
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JP6496320B2 (ja) * 2013-12-30 2019-04-03 キャノン・ナノテクノロジーズ・インコーポレーテッド サブ２０ｎｍの図案の均一なインプリントパターン転写方法
JP6301672B2 (ja) * 2014-02-12 2018-03-28 旭化成株式会社 反転構造体の製造方法及びこれを用いた凹凸構造付基板
US11049725B1 (en) * 2014-05-29 2021-06-29 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into silicon carbide and gallium nitride
US10620532B2 (en) 2014-11-11 2020-04-14 Canon Kabushiki Kaisha Imprint method, imprint apparatus, mold, and article manufacturing method
US9418886B1 (en) * 2015-07-24 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming conductive features
KR101846644B1 (ko) * 2016-02-15 2018-05-18 울산과학기술원 수처리 멤브레인 제조용 마이크로 구조 템플릿 제조 방법
JP6213610B2 (ja) * 2016-04-27 2017-10-18 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
JP6802969B2 (ja) * 2016-09-21 2020-12-23 大日本印刷株式会社 テンプレートの製造方法、及び、テンプレート
US10854455B2 (en) * 2016-11-21 2020-12-01 Marvell Asia Pte, Ltd. Methods and apparatus for fabricating IC chips with tilted patterning
JP6972581B2 (ja) * 2017-03-01 2021-11-24 大日本印刷株式会社 インプリントモールド及びインプリントモールドの製造方法
JP6800779B2 (ja) * 2017-03-06 2020-12-16 Hoya株式会社 転写用マスクの製造方法、および半導体デバイスの製造方法
CN119781177A (zh) 2017-08-31 2025-04-08 梅特兰兹股份有限公司 透射型超表面透镜集成
JP6512254B2 (ja) * 2017-09-20 2019-05-15 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
JP2019201079A (ja) * 2018-05-15 2019-11-21 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
US10867854B2 (en) * 2019-01-08 2020-12-15 Tokyo Electron Limited Double plug method for tone inversion patterning
US11501969B2 (en) * 2019-01-22 2022-11-15 International Business Machines Corporation Direct extreme ultraviolet lithography on hard mask with reverse tone
KR20220035971A (ko) 2019-07-26 2022-03-22 메탈렌츠 인코포레이티드 개구-메타 표면 및 하이브리드 굴절-메타 표면 이미징 시스템
JP7768140B2 (ja) 2020-10-07 2025-11-12 大日本印刷株式会社 ケイ素含有レジスト用硬化性樹脂組成物、パターン形成方法、インプリントモールドの製造方法および半導体デバイスの製造方法
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CN113433795A (zh) * 2021-06-23 2021-09-24 南方科技大学 一种黑色矩阵的制备方法
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Also Published As

Publication number Publication date
JP2008290316A (ja) 2008-12-04
US20080292976A1 (en) 2008-11-27
KR20100011975A (ko) 2010-02-03
WO2008146869A2 (en) 2008-12-04
CN101681095A (zh) 2010-03-24
JP5144127B2 (ja) 2013-02-13
WO2008146869A3 (en) 2009-05-22
US7960090B2 (en) 2011-06-14
CN101681095B (zh) 2012-05-30

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