KR101124569B1 - 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 - Google Patents

식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 Download PDF

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KR101124569B1
KR101124569B1 KR1020050049453A KR20050049453A KR101124569B1 KR 101124569 B1 KR101124569 B1 KR 101124569B1 KR 1020050049453 A KR1020050049453 A KR 1020050049453A KR 20050049453 A KR20050049453 A KR 20050049453A KR 101124569 B1 KR101124569 B1 KR 101124569B1
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South Korea
Prior art keywords
silver
layer
gate
conductive oxide
etching
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KR1020050049453A
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Korean (ko)
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KR20060128210A (ko
Inventor
박홍식
김시열
정종현
신원석
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삼성전자주식회사
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Priority to KR1020050049453A priority Critical patent/KR101124569B1/ko
Priority to US11/351,015 priority patent/US7357878B2/en
Priority to TW095108951A priority patent/TWI388062B/zh
Priority to CNA2006100674071A priority patent/CN1877448A/zh
Priority to JP2006121189A priority patent/JP4988242B2/ja
Publication of KR20060128210A publication Critical patent/KR20060128210A/ko
Priority to US12/035,316 priority patent/US7955521B2/en
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Publication of KR101124569B1 publication Critical patent/KR101124569B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020050049453A 2005-06-09 2005-06-09 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 Expired - Lifetime KR101124569B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020050049453A KR101124569B1 (ko) 2005-06-09 2005-06-09 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법
US11/351,015 US7357878B2 (en) 2005-06-09 2006-02-09 Etchant, and method for fabricating a thin film transistor subtrate including conductive wires using the etchant and the resulting structure
TW095108951A TWI388062B (zh) 2005-06-09 2006-03-16 蝕刻劑，以及使用該蝕刻劑與其製得之結構來製造包含導線之薄膜電晶體基材的方法
CNA2006100674071A CN1877448A (zh) 2005-06-09 2006-03-27 蚀刻剂及使用蚀刻剂制造布线及薄膜晶体管基板的方法
JP2006121189A JP4988242B2 (ja) 2005-06-09 2006-04-25 配線形成方法
US12/035,316 US7955521B2 (en) 2005-06-09 2008-02-21 Etchant and method for fabricating a thin film transistor substrate including conductive wires using the etchant and the resulting structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050049453A KR101124569B1 (ko) 2005-06-09 2005-06-09 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법

Publications (2)

Publication Number Publication Date
KR20060128210A KR20060128210A (ko) 2006-12-14
KR101124569B1 true KR101124569B1 (ko) 2012-03-15

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US (2) US7357878B2 (enExample)
JP (1) JP4988242B2 (enExample)
KR (1) KR101124569B1 (enExample)
CN (1) CN1877448A (enExample)
TW (1) TWI388062B (enExample)

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KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR100987840B1 (ko) * 2007-04-25 2010-10-13 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
KR100982395B1 (ko) 2007-04-25 2010-09-14 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
JP2009194351A (ja) * 2007-04-27 2009-08-27 Canon Inc 薄膜トランジスタおよびその製造方法
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KR20090095181A (ko) 2008-03-05 2009-09-09 삼성전자주식회사 금속배선 형성용 식각액 조성물, 이 조성물을 이용한도전막의 패터닝 방법 및 평판 표시 장치의 제조방법
KR101747391B1 (ko) * 2009-07-07 2017-06-15 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 이의 제조 방법
CN102655155B (zh) * 2012-02-27 2015-03-11 京东方科技集团股份有限公司 阵列基板及其制造方法和显示装置
KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
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KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
KR101972630B1 (ko) * 2015-01-05 2019-04-26 동우 화인켐 주식회사 은 식각액 조성물 및 이를 이용한 표시 기판
KR20160108944A (ko) * 2015-03-09 2016-09-21 동우 화인켐 주식회사 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
CN104893728B (zh) * 2015-04-10 2018-11-27 深圳新宙邦科技股份有限公司 一种用于ITO/Ag/ITO薄膜的低张力的蚀刻液
TWI631205B (zh) * 2015-11-06 2018-08-01 東友精細化工有限公司 銀蝕刻液組合物和使用該組合物的顯示基板
KR102433385B1 (ko) * 2015-11-10 2022-08-17 동우 화인켐 주식회사 은 식각액 조성물 및 이를 이용한 표시 기판
KR20190058758A (ko) 2017-11-21 2019-05-30 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법
KR102554816B1 (ko) 2018-04-23 2023-07-12 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴의 제조 방법
KR102661845B1 (ko) 2018-10-11 2024-04-30 삼성디스플레이 주식회사 식각액 및 이를 이용한 표시 장치의 제조 방법
KR102669119B1 (ko) 2018-11-14 2024-05-24 삼성디스플레이 주식회사 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시 장치의 제조 방법
JP6895577B2 (ja) * 2019-11-21 2021-06-30 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
US11898081B2 (en) 2019-11-21 2024-02-13 Tokyo Ohka Kogyo Co., Ltd. Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring
KR102676044B1 (ko) 2020-04-29 2024-06-20 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 표시 장치의 제조 방법
KR102659176B1 (ko) 2020-12-28 2024-04-23 삼성디스플레이 주식회사 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법
CN115188768A (zh) * 2021-03-22 2022-10-14 合肥京东方显示技术有限公司 阵列基板及其制作方法、显示面板和显示装置

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KR20040093716A (ko) * 2002-02-11 2004-11-08 듀퐁 에어 프로덕츠 나노머티어리얼즈 엘엘씨 고체에 부착되고 ｃｍｐ 제제를 강화시키는데 사용되는자유 라디칼 형성 활성화제

Also Published As

Publication number Publication date
US7955521B2 (en) 2011-06-07
US7357878B2 (en) 2008-04-15
US20060278606A1 (en) 2006-12-14
TW200701472A (en) 2007-01-01
US20080142756A1 (en) 2008-06-19
KR20060128210A (ko) 2006-12-14
JP4988242B2 (ja) 2012-08-01
TWI388062B (zh) 2013-03-01
CN1877448A (zh) 2006-12-13
JP2006344939A (ja) 2006-12-21

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