TWI388062B - 蝕刻劑，以及使用該蝕刻劑與其製得之結構來製造包含導線之薄膜電晶體基材的方法 - Google Patents
蝕刻劑，以及使用該蝕刻劑與其製得之結構來製造包含導線之薄膜電晶體基材的方法 Download PDFInfo
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- TWI388062B TWI388062B TW095108951A TW95108951A TWI388062B TW I388062 B TWI388062 B TW I388062B TW 095108951 A TW095108951 A TW 095108951A TW 95108951 A TW95108951 A TW 95108951A TW I388062 B TWI388062 B TW I388062B
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- 239000000758 substrate Substances 0.000 title claims abstract description 75
- 239000010409 thin film Substances 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 claims abstract description 65
- 239000000463 material Substances 0.000 claims abstract description 38
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000008367 deionised water Substances 0.000 claims abstract description 9
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 9
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 229910052788 barium Inorganic materials 0.000 claims abstract description 7
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 7
- 229910052742 iron Inorganic materials 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 7
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims abstract 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 75
- 238000005530 etching Methods 0.000 claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 34
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 26
- 150000001412 amines Chemical class 0.000 claims description 14
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 13
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 13
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 239000004744 fabric Substances 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 1
- 229910001868 water Inorganic materials 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 370
- 229920002120 photoresistant polymer Polymers 0.000 description 63
- 229910052732 germanium Inorganic materials 0.000 description 34
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 34
- 239000011241 protective layer Substances 0.000 description 26
- 238000000206 photolithography Methods 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000004005 microsphere Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 7
- 229910004205 SiNX Inorganic materials 0.000 description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- 238000001914 filtration Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 230000001154 acute effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 239000004094 surface-active agent Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 241000408495 Iton Species 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PUNXVEAWLAVABA-UHFFFAOYSA-N 1,2,3,4-tetrahydroanthracene;1,2,5,6-tetrahydroanthracene Chemical compound C1=CC=C2C=C(CCCC3)C3=CC2=C1.C1=CCCC2=C1C=C1CCC=CC1=C2 PUNXVEAWLAVABA-UHFFFAOYSA-N 0.000 description 1
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 1
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
- H10D30/6743—Silicon
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050049453A KR101124569B1 (ko) | 2005-06-09 | 2005-06-09 | 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200701472A TW200701472A (en) | 2007-01-01 |
| TWI388062B true TWI388062B (zh) | 2013-03-01 |
Family
ID=37509918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095108951A TWI388062B (zh) | 2005-06-09 | 2006-03-16 | 蝕刻劑，以及使用該蝕刻劑與其製得之結構來製造包含導線之薄膜電晶體基材的方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7357878B2 (enExample) |
| JP (1) | JP4988242B2 (enExample) |
| KR (1) | KR101124569B1 (enExample) |
| CN (1) | CN1877448A (enExample) |
| TW (1) | TWI388062B (enExample) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7288444B2 (en) * | 2001-04-04 | 2007-10-30 | Samsung Sdi Co., Ltd. | Thin film transistor and method of manufacturing the same |
| KR20060097381A (ko) * | 2005-03-09 | 2006-09-14 | 삼성전자주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
| KR100987840B1 (ko) * | 2007-04-25 | 2010-10-13 | 주식회사 엘지화학 | 박막 트랜지스터 및 이의 제조방법 |
| KR100982395B1 (ko) | 2007-04-25 | 2010-09-14 | 주식회사 엘지화학 | 박막 트랜지스터 및 이의 제조방법 |
| JP2009194351A (ja) * | 2007-04-27 | 2009-08-27 | Canon Inc | 薄膜トランジスタおよびその製造方法 |
| JP5363713B2 (ja) * | 2007-07-19 | 2013-12-11 | 三洋半導体製造株式会社 | エッチング液組成物 |
| KR20090095181A (ko) | 2008-03-05 | 2009-09-09 | 삼성전자주식회사 | 금속배선 형성용 식각액 조성물, 이 조성물을 이용한도전막의 패터닝 방법 및 평판 표시 장치의 제조방법 |
| KR101747391B1 (ko) * | 2009-07-07 | 2017-06-15 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 이의 제조 방법 |
| CN102655155B (zh) * | 2012-02-27 | 2015-03-11 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法和显示装置 |
| KR102290801B1 (ko) * | 2013-06-21 | 2021-08-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| US20150069011A1 (en) * | 2013-09-11 | 2015-03-12 | Carestream Health, Inc. | Wet etching patterning compositions and methods |
| KR102118461B1 (ko) * | 2013-11-25 | 2020-06-09 | 엘지디스플레이 주식회사 | 산화물 박막트랜지스터를 포함한 어레이기판 및 그 제조방법 |
| KR102091541B1 (ko) * | 2014-02-25 | 2020-03-20 | 동우 화인켐 주식회사 | 유기 발광 표시 장치의 제조 방법 |
| KR101972630B1 (ko) * | 2015-01-05 | 2019-04-26 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 표시 기판 |
| KR20160108944A (ko) * | 2015-03-09 | 2016-09-21 | 동우 화인켐 주식회사 | 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법 |
| CN104893728B (zh) * | 2015-04-10 | 2018-11-27 | 深圳新宙邦科技股份有限公司 | 一种用于ITO/Ag/ITO薄膜的低张力的蚀刻液 |
| TWI631205B (zh) * | 2015-11-06 | 2018-08-01 | 東友精細化工有限公司 | 銀蝕刻液組合物和使用該組合物的顯示基板 |
| KR102433385B1 (ko) * | 2015-11-10 | 2022-08-17 | 동우 화인켐 주식회사 | 은 식각액 조성물 및 이를 이용한 표시 기판 |
| KR20190058758A (ko) | 2017-11-21 | 2019-05-30 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법 |
| KR102554816B1 (ko) | 2018-04-23 | 2023-07-12 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 금속 패턴의 제조 방법 |
| KR102661845B1 (ko) | 2018-10-11 | 2024-04-30 | 삼성디스플레이 주식회사 | 식각액 및 이를 이용한 표시 장치의 제조 방법 |
| KR102669119B1 (ko) | 2018-11-14 | 2024-05-24 | 삼성디스플레이 주식회사 | 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시 장치의 제조 방법 |
| JP6895577B2 (ja) * | 2019-11-21 | 2021-06-30 | 東京応化工業株式会社 | エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法 |
| US11898081B2 (en) | 2019-11-21 | 2024-02-13 | Tokyo Ohka Kogyo Co., Ltd. | Ruthenium-etching solution, method for manufacturing ruthenium-etching solution, method for processing object to be processed, and method for manufacturing ruthenium-containing wiring |
| KR102676044B1 (ko) | 2020-04-29 | 2024-06-20 | 삼성디스플레이 주식회사 | 식각액 조성물 및 이를 이용한 표시 장치의 제조 방법 |
| KR102659176B1 (ko) | 2020-12-28 | 2024-04-23 | 삼성디스플레이 주식회사 | 은 함유 박막의 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시장치의 제조 방법 |
| CN115188768A (zh) * | 2021-03-22 | 2022-10-14 | 合肥京东方显示技术有限公司 | 阵列基板及其制作方法、显示面板和显示装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6132522A (en) * | 1996-07-19 | 2000-10-17 | Cfmt, Inc. | Wet processing methods for the manufacture of electronic components using sequential chemical processing |
| JP2000008184A (ja) * | 1998-06-24 | 2000-01-11 | Toppan Printing Co Ltd | 多層導電膜のエッチング方法 |
| US6387600B1 (en) * | 1999-08-25 | 2002-05-14 | Micron Technology, Inc. | Protective layer during lithography and etch |
| JP2002231706A (ja) | 2001-02-01 | 2002-08-16 | Matsushita Electric Ind Co Ltd | エッチング液及びこれを用いた薄膜トランジスタの製造方法 |
| JP4668533B2 (ja) * | 2001-07-06 | 2011-04-13 | サムスン エレクトロニクス カンパニー リミテッド | 配線用エッチング液とこれを利用した配線の製造方法及びこれを含む薄膜トランジスタ基板の製造方法 |
| KR100848109B1 (ko) | 2001-10-23 | 2008-07-24 | 삼성전자주식회사 | 배선용 식각액, 이를 이용한 배선의 제조 방법 및 이를포함하는 박막 트랜지스터 어레이 기판의 제조 방법 |
| WO2003036377A1 (en) * | 2001-10-23 | 2003-05-01 | Samsung Electronics Co., Ltd. | A etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method |
| KR100415617B1 (ko) * | 2001-12-06 | 2004-01-24 | 엘지.필립스 엘시디 주식회사 | 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법 |
| US20030162398A1 (en) * | 2002-02-11 | 2003-08-28 | Small Robert J. | Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same |
| US20030168431A1 (en) * | 2002-02-25 | 2003-09-11 | Ritdisplay Corporation | Etchant composition for silver alloy |
| KR100853216B1 (ko) | 2002-06-25 | 2008-08-20 | 삼성전자주식회사 | 배선용 식각액, 이를 이용한 배선의 제조 방법, 그 배선을포함하는 박막 트랜지스터 어레이 기판 및 그의 제조 방법 |
| JP2004156070A (ja) * | 2002-11-01 | 2004-06-03 | Kanto Chem Co Inc | 透明導電膜を含む積層膜のエッチング液組成物 |
| JP2004356616A (ja) * | 2003-05-28 | 2004-12-16 | Samsung Electronics Co Ltd | 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法 |
| KR100960687B1 (ko) * | 2003-06-24 | 2010-06-01 | 엘지디스플레이 주식회사 | 구리(또는 구리합금층)를 포함하는 이중금속층을 일괄식각하기위한 식각액 |
| TW200510570A (en) * | 2003-08-22 | 2005-03-16 | Arch Spec Chem Inc | Novel aqueous based metal etchant |
-
2005
- 2005-06-09 KR KR1020050049453A patent/KR101124569B1/ko not_active Expired - Lifetime
-
2006
- 2006-02-09 US US11/351,015 patent/US7357878B2/en active Active
- 2006-03-16 TW TW095108951A patent/TWI388062B/zh active
- 2006-03-27 CN CNA2006100674071A patent/CN1877448A/zh active Pending
- 2006-04-25 JP JP2006121189A patent/JP4988242B2/ja active Active
-
2008
- 2008-02-21 US US12/035,316 patent/US7955521B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7955521B2 (en) | 2011-06-07 |
| US7357878B2 (en) | 2008-04-15 |
| US20060278606A1 (en) | 2006-12-14 |
| TW200701472A (en) | 2007-01-01 |
| US20080142756A1 (en) | 2008-06-19 |
| KR20060128210A (ko) | 2006-12-14 |
| JP4988242B2 (ja) | 2012-08-01 |
| KR101124569B1 (ko) | 2012-03-15 |
| CN1877448A (zh) | 2006-12-13 |
| JP2006344939A (ja) | 2006-12-21 |
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