CN100446260C - Tft阵列面板及其制造方法 - Google Patents
Tft阵列面板及其制造方法 Download PDFInfo
- Publication number
- CN100446260C CN100446260C CNB2005101302692A CN200510130269A CN100446260C CN 100446260 C CN100446260 C CN 100446260C CN B2005101302692 A CNB2005101302692 A CN B2005101302692A CN 200510130269 A CN200510130269 A CN 200510130269A CN 100446260 C CN100446260 C CN 100446260C
- Authority
- CN
- China
- Prior art keywords
- layer
- aluminum layer
- tft array
- array panel
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 38
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 138
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 137
- 238000004519 manufacturing process Methods 0.000 claims abstract description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 55
- 239000004411 aluminium Substances 0.000 claims description 46
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 25
- 239000011733 molybdenum Substances 0.000 claims description 25
- 229910052750 molybdenum Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 24
- 239000007789 gas Substances 0.000 claims description 12
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 10
- 238000003475 lamination Methods 0.000 claims description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 8
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 239000002243 precursor Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 description 43
- 239000004065 semiconductor Substances 0.000 description 36
- 229910021417 amorphous silicon Inorganic materials 0.000 description 29
- 238000005530 etching Methods 0.000 description 23
- 230000008569 process Effects 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 19
- 239000012212 insulator Substances 0.000 description 18
- 238000001312 dry etching Methods 0.000 description 14
- 238000002161 passivation Methods 0.000 description 14
- 238000003860 storage Methods 0.000 description 13
- 238000000151 deposition Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 235000008429 bread Nutrition 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 150000001398 aluminium Chemical class 0.000 description 1
- XJVBHCCEUWWHMI-UHFFFAOYSA-N argon(.1+) Chemical compound [Ar+] XJVBHCCEUWWHMI-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B17/00—Surgical instruments, devices or methods, e.g. tourniquets
- A61B17/50—Instruments, other than pincettes or toothpicks, for removing foreign bodies from the human body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Surgery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Heart & Thoracic Surgery (AREA)
- Veterinary Medicine (AREA)
- Public Health (AREA)
- General Health & Medical Sciences (AREA)
- Animal Behavior & Ethology (AREA)
- Molecular Biology (AREA)
- Medical Informatics (AREA)
- Biomedical Technology (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Liquid Crystal (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050001797A KR20060081470A (ko) | 2005-01-07 | 2005-01-07 | 박막트랜지스터 기판과 그 제조방법 |
KR1020050001797 | 2005-01-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1812109A CN1812109A (zh) | 2006-08-02 |
CN100446260C true CN100446260C (zh) | 2008-12-24 |
Family
ID=36695933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005101302692A Expired - Fee Related CN100446260C (zh) | 2005-01-07 | 2005-12-12 | Tft阵列面板及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060163741A1 (zh) |
JP (1) | JP2006191013A (zh) |
KR (1) | KR20060081470A (zh) |
CN (1) | CN100446260C (zh) |
TW (1) | TWI290770B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101229277B1 (ko) * | 2006-10-12 | 2013-02-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 |
JP4954224B2 (ja) * | 2007-02-13 | 2012-06-13 | 三菱電機株式会社 | 表示装置およびその製造方法 |
KR101055211B1 (ko) * | 2007-07-11 | 2011-08-08 | 엘지디스플레이 주식회사 | 액정표시장치의 제조방법 |
US9551910B2 (en) * | 2009-10-02 | 2017-01-24 | Unified Innovative Technology, Llc | Active matrix substrate and display device |
JP5865634B2 (ja) | 2011-09-06 | 2016-02-17 | 三菱電機株式会社 | 配線膜の製造方法 |
US20130240995A1 (en) * | 2012-03-19 | 2013-09-19 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Thin-film transistor array substrate and manufacturing method thereof |
CN102623461A (zh) * | 2012-03-19 | 2012-08-01 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制作方法 |
CN103779358A (zh) | 2014-01-27 | 2014-05-07 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法、显示装置 |
JP6072888B2 (ja) * | 2015-12-22 | 2017-02-01 | 三菱電機株式会社 | 配線膜およびそれを用いたアクティブマトリクス基板、並びに配線膜の製造方法 |
CN106206324B (zh) * | 2016-08-31 | 2019-03-26 | 深圳市华星光电技术有限公司 | 一种金属绝缘层半导体结构的制造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1136222A (zh) * | 1995-02-20 | 1996-11-20 | 松下电器产业株式会社 | 存储器及其制造方法 |
JP2000349294A (ja) * | 1999-06-03 | 2000-12-15 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
US20020096993A1 (en) * | 1999-02-04 | 2002-07-25 | Raina Kanwal K. | Field emission display with smooth aluminum film |
CN1412609A (zh) * | 2001-10-05 | 2003-04-23 | 三星电子株式会社 | 液晶显示器 |
US6562668B2 (en) * | 2000-08-12 | 2003-05-13 | Jin Jang | Method of fabricating thin film transistor using buffer layer and the thin film transistor |
CN1430246A (zh) * | 2001-11-28 | 2003-07-16 | 东部电子株式会社 | 利用铝的防止铜扩散膜的形成方法 |
US20040077141A1 (en) * | 2002-10-17 | 2004-04-22 | Anam Semiconductor, Inc. | Capacitor and fabrication method thereof |
US20040140490A1 (en) * | 2003-01-16 | 2004-07-22 | Cheng-Chi Wang | Hillock-free gate layer and method of manufacturing the same |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0824191B2 (ja) * | 1989-03-17 | 1996-03-06 | 富士通株式会社 | 薄膜トランジスタ |
JP2945533B2 (ja) * | 1992-03-04 | 1999-09-06 | 駿介 小林 | 液晶表示装置の製造方法 |
KR100193653B1 (ko) * | 1995-11-20 | 1999-06-15 | 김영환 | 축적 캐패시터를 구비한 스태거 tft-lcd 및 그의 제조방법 |
US6033787A (en) * | 1996-08-22 | 2000-03-07 | Mitsubishi Materials Corporation | Ceramic circuit board with heat sink |
KR100208024B1 (ko) * | 1996-10-04 | 1999-07-15 | 윤종용 | 힐락 억제를 위한 tft의 알루미늄 게이트 구조 및 그 제조방법 |
US6380559B1 (en) * | 1999-06-03 | 2002-04-30 | Samsung Electronics Co., Ltd. | Thin film transistor array substrate for a liquid crystal display |
JP2001147424A (ja) * | 1999-11-19 | 2001-05-29 | Hitachi Ltd | 導電性薄膜形成用の絶縁基板およびこの絶縁基板を用いた液晶表示素子 |
JP2001257350A (ja) * | 2000-03-08 | 2001-09-21 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR20030016051A (ko) * | 2001-08-20 | 2003-02-26 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 그 제조 방법 |
JP2005062802A (ja) * | 2003-07-28 | 2005-03-10 | Advanced Display Inc | 薄膜トランジスタアレイ基板の製法 |
KR100687904B1 (ko) * | 2005-06-30 | 2007-02-27 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 및 그 제조방법 |
-
2005
- 2005-01-07 KR KR1020050001797A patent/KR20060081470A/ko not_active Application Discontinuation
- 2005-11-25 TW TW094141391A patent/TWI290770B/zh not_active IP Right Cessation
- 2005-12-09 JP JP2005355648A patent/JP2006191013A/ja not_active Withdrawn
- 2005-12-12 CN CNB2005101302692A patent/CN100446260C/zh not_active Expired - Fee Related
-
2006
- 2006-01-09 US US11/328,820 patent/US20060163741A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1136222A (zh) * | 1995-02-20 | 1996-11-20 | 松下电器产业株式会社 | 存储器及其制造方法 |
US20020096993A1 (en) * | 1999-02-04 | 2002-07-25 | Raina Kanwal K. | Field emission display with smooth aluminum film |
JP2000349294A (ja) * | 1999-06-03 | 2000-12-15 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタの製造方法 |
US6562668B2 (en) * | 2000-08-12 | 2003-05-13 | Jin Jang | Method of fabricating thin film transistor using buffer layer and the thin film transistor |
CN1412609A (zh) * | 2001-10-05 | 2003-04-23 | 三星电子株式会社 | 液晶显示器 |
CN1430246A (zh) * | 2001-11-28 | 2003-07-16 | 东部电子株式会社 | 利用铝的防止铜扩散膜的形成方法 |
US20040077141A1 (en) * | 2002-10-17 | 2004-04-22 | Anam Semiconductor, Inc. | Capacitor and fabrication method thereof |
US20040140490A1 (en) * | 2003-01-16 | 2004-07-22 | Cheng-Chi Wang | Hillock-free gate layer and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
TW200631181A (en) | 2006-09-01 |
KR20060081470A (ko) | 2006-07-13 |
JP2006191013A (ja) | 2006-07-20 |
TWI290770B (en) | 2007-12-01 |
CN1812109A (zh) | 2006-08-02 |
US20060163741A1 (en) | 2006-07-27 |
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