JP2004356616A - 配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法 - Google Patents
配線用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 70
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 137
- 238000005530 etching Methods 0.000 claims abstract description 58
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000000059 patterning Methods 0.000 claims abstract description 25
- 239000003381 stabilizer Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 15
- 239000012498 ultrapure water Substances 0.000 claims abstract description 15
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 14
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 30
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 25
- 229910052750 molybdenum Inorganic materials 0.000 claims description 25
- 239000011733 molybdenum Substances 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 16
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 125000000217 alkyl group Chemical group 0.000 claims description 9
- 229910052788 barium Inorganic materials 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052718 tin Inorganic materials 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 229910052725 zinc Inorganic materials 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 7
- 150000007522 mineralic acids Chemical class 0.000 claims description 6
- 238000010030 laminating Methods 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims 1
- 230000001681 protective effect Effects 0.000 abstract description 14
- 229910000583 Nd alloy Inorganic materials 0.000 abstract description 9
- 229910045601 alloy Inorganic materials 0.000 abstract description 6
- 239000000956 alloy Substances 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract 2
- 239000004973 liquid crystal related substance Substances 0.000 description 36
- 239000004020 conductor Substances 0.000 description 27
- 238000003860 storage Methods 0.000 description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 21
- 238000001259 photo etching Methods 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 7
- 239000011701 zinc Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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- Ceramic Engineering (AREA)
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- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】 絶縁基板の上部にAl-Nd alloyの下部膜とMoW alloyの上部膜を順次に積層した後、50-60%範囲のリン酸、6-10%範囲の硝酸、15-25%範囲の酢酸及び2-5%の安定剤とその他に超純水を含むエッチング液でパターニングしてゲート電極を含むゲート線を形成する。次に、ゲート絶縁膜及び半導体層を順次に形成した後、MoW alloyの導電膜を積層し、ゲート線用エッチング液と同一なエッチング液でパターニングしてソース電極を有するデータ線及びドレーン電極を形成する。次に、保護膜を積層しパターニングしてドレーン電極を露出する接触孔を形成した後、保護膜の上部にIZOを積層し、ゲート線及びデータ線をエッチングした液でパターニングしてドレーン電極と連結される画素電極を形成する。
【選択図】 図5
Description
110 絶縁基板
121 ゲート線
123 ゲート電極
140 ゲート絶縁膜
171 データ線
175 ドレーン電極
173 ソース電極
190 画素電極
201 下部膜
202 上部膜
701 第1導電膜
702 第2導電膜
703 第3導電膜
Claims (18)
- 基板上にゲート電極を有するゲート線を形成する段階と、前記基板上にゲート絶縁膜を積層する段階と、前記ゲート絶縁膜上部に半導体層を形成する段階と、ソース電極を有するデータ線及びドレーン電極を形成する段階と、前記ドレーン電極と連結される画素電極を形成する段階とを含み、前記ゲート線、前記データ線、前記ドレーン電極及び前記画素電極に用いられるエッチング液が同一である薄膜トランジスタ表示板の製造方法。
- 前記エッチング液は50-60%範囲のリン酸、6-10%範囲の硝酸、15-25%範囲の酢酸及び2-5%の安定剤とその他に超純水を含み、前記安定剤は化学式M(OH)XLYで表されるオキシハイドライド無機酸であり、MはZn、Sn、Cr、Al、Ba、Fe、Ti、SiまたはBであり、Xは2または3であり、LはH2O、NH3、CN、NH2Rであり、Yは0、1、2または3であり、Rはアルキル基である請求項1に記載の薄膜トランジスタ表示板の製造方法。
- 前記ゲート線はアルミニウムまたはアルミニウム合金からなる下部膜とモリブデンまたはモリブデン合金の上部膜とで形成される請求項2に記載の薄膜トランジスタ表示板の製造方法。
- 前記データ線はモリブデンまたはモリブデン合金の導電膜で形成される請求項3に記載の薄膜トランジスタ表示板の製造方法。
- 前記画素電極はIZOで形成される請求項4に記載の薄膜トランジスタ表示板の製造方法。
- 前記下部膜及び前記上部膜を各々1500-3000Å及び300-600Å範囲の厚さで形成し、前記データ線を1500-3000Å範囲の厚さで形成し、前記画素電極を800-1000Å範囲の厚さで形成する請求項5に記載の薄膜トランジスタ表示板の製造方法。
- 前記エッチング液は65-75%範囲のリン酸、0.5-4%範囲の硝酸、9-13%範囲の酢酸及び2-5%の安定剤とその他に超純水を含み、前記安定剤は化学式M(OH)XLYで表されるオキシハイドライドであり、MはZn、Sn、Cr、Al、Ba、Fe、Ti、SiまたはBであり、Xは2または3であり、LはH2O、NH3、CN、NH2Rであり、Yは0、1、2または3であり、Rはアルキル基である請求項1に記載の薄膜トランジスタ表示板の製造方法。
- 前記ゲート線はアルミニウムまたはアルミニウム合金からなる下部膜とモリブデンの上部膜とで形成される請求項7に記載の薄膜トランジスタ表示板の製造方法。
- 前記データ線はモリブデンの第1導電膜、アルミニウムまたはアルミニウム合金の第2導電膜またはモリブデンの第3導電膜で形成される請求項8に記載の薄膜トランジスタ表示板の製造方法。
- 前記画素電極はIZOで形成される請求項9に記載の薄膜トランジスタ表示板の製造方法。
- 50-60%範囲のリン酸、6-10%範囲の硝酸、15-25%範囲の酢酸及び2-5%の安定剤とその他に超純水を含み、前記安定剤は化学式M(OH)XLYで表されるオキシハイドライドであり、MはZn、Sn、Cr、Al、Ba、Fe、Ti、SiまたはBであり、Xは2または3であり、LはH2O、NH3、CN、NH2Rであり、Yは0、1、2または3であり、Rはアルキル基である配線用エッチング液。
- 前記配線用エッチング液はアルミニウムまたはアルミニウム合金からなる第1導電膜またはモリブデンまたはモリブデン合金からなる第2導電膜または前記第1及び第2導電膜を含む多重膜をパターニングするために用いられる請求項11に記載の配線用エッチング液。
- 前記配線用エッチング液はIZOからなる透明導電膜をパターニングするために用いられる請求項11に記載の配線用エッチング液。
- 65-75%範囲のリン酸、0.5-4%範囲の硝酸、9-13%範囲の酢酸及び2-5%の安定剤とその他に超純水を含み、前記安定剤は化学式M(OH)XLYで表されるオキシハイドライドであり、MはZn、Sn、Cr、Al、Ba、Fe、Ti、SiまたはBであり、Xは2または3であり、LはH2O、NH3、CN、NH2Rであり、Yは0、1、2または3であり、Rはアルキル基である配線用エッチング液。
- 前記配線用エッチング液はアルミニウムまたはアルミニウム合金からなる第1導電膜またはモリブデンまたはモリブデン合金からなる第2導電膜または前記第1及び第2導電膜を含む多重膜をパターニングするために用いられる請求項14に記載の配線用エッチング液。
- 前記配線用エッチング液はIZOからなる透明導電膜をパターニングするために用いられる請求項14に記載の配線用エッチング液。
- 前記配線用エッチング液はアルミニウムまたはアルミニウム合金からなる第1導電膜及びモリブデンからなる第2導電膜からなる多層膜とIZOからなる第3導電膜を一緒にパターニングするために用いられる請求項14に記載の配線用エッチング液。
- 前記配線用エッチング液はモリブデンの第1導電膜、アルミニウムまたはアルミニウム合金の第2導電膜またはモリブデンの第3導電膜からなる3階薄をパターニングするために用いられる請求項14に記載の配線用エッチング液。
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US (2) | US7371622B2 (ja) |
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Cited By (3)
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JP2006229216A (ja) * | 2005-02-15 | 2006-08-31 | Samsung Electronics Co Ltd | エッチング液組成物及び薄膜トランジスタ表示板の製造方法 |
JP2006344939A (ja) * | 2005-06-09 | 2006-12-21 | Samsung Electronics Co Ltd | エッチング液、エッチング液及びその結果構造物を用いた導電性配線を含む薄膜トランジスタ基板の製造方法 |
JP2008166334A (ja) * | 2006-12-27 | 2008-07-17 | Mitsubishi Electric Corp | 表示装置及びその製造方法 |
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TWI382452B (zh) * | 2004-03-19 | 2013-01-11 | Samsung Display Co Ltd | 薄膜電晶體陣列面板及其製造方法 |
KR101154244B1 (ko) * | 2005-06-28 | 2012-06-18 | 주식회사 동진쎄미켐 | 알루미늄, 몰리브덴, 인듐-틴-옥사이드를 식각하기 위한 식각액 |
KR20070017762A (ko) * | 2005-08-08 | 2007-02-13 | 엘지.필립스 엘시디 주식회사 | 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법 |
TWI328788B (en) * | 2008-03-11 | 2010-08-11 | Au Optronics Corp | Gate driver-on-array and method of making the same |
TWI461122B (zh) * | 2013-01-07 | 2014-11-11 | Ecocera Optronics Co Ltd | 電路板及其製造方法 |
US20150069011A1 (en) * | 2013-09-11 | 2015-03-12 | Carestream Health, Inc. | Wet etching patterning compositions and methods |
JP6261926B2 (ja) * | 2013-09-18 | 2018-01-17 | 関東化學株式会社 | 金属酸化物エッチング液組成物およびエッチング方法 |
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- 2004-02-05 JP JP2004029921A patent/JP2004356616A/ja active Pending
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- 2004-02-06 US US10/772,293 patent/US7371622B2/en not_active Expired - Fee Related
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JP2002341384A (ja) * | 2001-05-14 | 2002-11-27 | Samsung Electronics Co Ltd | 液晶表示装置用薄膜トランジスター及びその製造方法 |
WO2003036377A1 (en) * | 2001-10-23 | 2003-05-01 | Samsung Electronics Co., Ltd. | A etchant for wires, a method for manufacturing the wires using the etchant, a thin film transistor array substrate and a method for manufacturing the same including the method |
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Also Published As
Publication number | Publication date |
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US7371622B2 (en) | 2008-05-13 |
TW200426498A (en) | 2004-12-01 |
US20080224093A1 (en) | 2008-09-18 |
US20040242017A1 (en) | 2004-12-02 |
TWI366066B (en) | 2012-06-11 |
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