JP4988242B2 - 配線形成方法 - Google Patents

配線形成方法 Download PDF

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Publication number
JP4988242B2
JP4988242B2 JP2006121189A JP2006121189A JP4988242B2 JP 4988242 B2 JP4988242 B2 JP 4988242B2 JP 2006121189 A JP2006121189 A JP 2006121189A JP 2006121189 A JP2006121189 A JP 2006121189A JP 4988242 B2 JP4988242 B2 JP 4988242B2
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JP
Japan
Prior art keywords
film
etching
silver
gate
conductive oxide
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JP2006121189A
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English (en)
Japanese (ja)
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JP2006344939A5 (enExample
JP2006344939A (ja
Inventor
弘 植 朴
時 烈 金
鍾 鉉 鄭
原 碩 申
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of JP2006344939A5 publication Critical patent/JP2006344939A5/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/30—Acidic compositions for etching other metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006121189A 2005-06-09 2006-04-25 配線形成方法 Active JP4988242B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2005-0049453 2005-06-09
KR1020050049453A KR101124569B1 (ko) 2005-06-09 2005-06-09 식각액, 이를 이용하는 배선 형성 방법 및 박막 트랜지스터기판의 제조 방법

Publications (3)

Publication Number Publication Date
JP2006344939A JP2006344939A (ja) 2006-12-21
JP2006344939A5 JP2006344939A5 (enExample) 2009-06-18
JP4988242B2 true JP4988242B2 (ja) 2012-08-01

Family

ID=37509918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006121189A Active JP4988242B2 (ja) 2005-06-09 2006-04-25 配線形成方法

Country Status (5)

Country Link
US (2) US7357878B2 (enExample)
JP (1) JP4988242B2 (enExample)
KR (1) KR101124569B1 (enExample)
CN (1) CN1877448A (enExample)
TW (1) TWI388062B (enExample)

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US7288444B2 (en) * 2001-04-04 2007-10-30 Samsung Sdi Co., Ltd. Thin film transistor and method of manufacturing the same
KR20060097381A (ko) * 2005-03-09 2006-09-14 삼성전자주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR100987840B1 (ko) * 2007-04-25 2010-10-13 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
KR100982395B1 (ko) 2007-04-25 2010-09-14 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
JP2009194351A (ja) * 2007-04-27 2009-08-27 Canon Inc 薄膜トランジスタおよびその製造方法
JP5363713B2 (ja) * 2007-07-19 2013-12-11 三洋半導体製造株式会社 エッチング液組成物
KR20090095181A (ko) 2008-03-05 2009-09-09 삼성전자주식회사 금속배선 형성용 식각액 조성물, 이 조성물을 이용한도전막의 패터닝 방법 및 평판 표시 장치의 제조방법
KR101747391B1 (ko) * 2009-07-07 2017-06-15 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 이의 제조 방법
CN102655155B (zh) * 2012-02-27 2015-03-11 京东方科技集团股份有限公司 阵列基板及其制造方法和显示装置
KR102290801B1 (ko) * 2013-06-21 2021-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US20150069011A1 (en) * 2013-09-11 2015-03-12 Carestream Health, Inc. Wet etching patterning compositions and methods
KR102118461B1 (ko) * 2013-11-25 2020-06-09 엘지디스플레이 주식회사 산화물 박막트랜지스터를 포함한 어레이기판 및 그 제조방법
KR102091541B1 (ko) * 2014-02-25 2020-03-20 동우 화인켐 주식회사 유기 발광 표시 장치의 제조 방법
KR101972630B1 (ko) * 2015-01-05 2019-04-26 동우 화인켐 주식회사 은 식각액 조성물 및 이를 이용한 표시 기판
KR20160108944A (ko) * 2015-03-09 2016-09-21 동우 화인켐 주식회사 은 함유 박막의 식각액 조성물 및 이를 이용한 표시 장치용 어레이 기판의 제조방법
CN104893728B (zh) * 2015-04-10 2018-11-27 深圳新宙邦科技股份有限公司 一种用于ITO/Ag/ITO薄膜的低张力的蚀刻液
TWI631205B (zh) * 2015-11-06 2018-08-01 東友精細化工有限公司 銀蝕刻液組合物和使用該組合物的顯示基板
KR102433385B1 (ko) * 2015-11-10 2022-08-17 동우 화인켐 주식회사 은 식각액 조성물 및 이를 이용한 표시 기판
KR20190058758A (ko) 2017-11-21 2019-05-30 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 디스플레이 장치의 제조방법
KR102554816B1 (ko) 2018-04-23 2023-07-12 삼성디스플레이 주식회사 식각액 조성물 및 이를 이용한 금속 패턴의 제조 방법
KR102661845B1 (ko) 2018-10-11 2024-04-30 삼성디스플레이 주식회사 식각액 및 이를 이용한 표시 장치의 제조 방법
KR102669119B1 (ko) 2018-11-14 2024-05-24 삼성디스플레이 주식회사 식각 조성물, 이를 이용한 패턴 형성 방법 및 표시 장치의 제조 방법
JP6895577B2 (ja) * 2019-11-21 2021-06-30 東京応化工業株式会社 エッチング液、エッチング液の製造方法、被処理体の処理方法、及びルテニウム含有配線の製造方法
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Also Published As

Publication number Publication date
US7955521B2 (en) 2011-06-07
US7357878B2 (en) 2008-04-15
US20060278606A1 (en) 2006-12-14
TW200701472A (en) 2007-01-01
US20080142756A1 (en) 2008-06-19
KR20060128210A (ko) 2006-12-14
TWI388062B (zh) 2013-03-01
KR101124569B1 (ko) 2012-03-15
CN1877448A (zh) 2006-12-13
JP2006344939A (ja) 2006-12-21

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