KR101060073B1 - 템플레이트 타입의 기판 및 그 제조 방법 - Google Patents

템플레이트 타입의 기판 및 그 제조 방법 Download PDF

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Publication number
KR101060073B1
KR101060073B1 KR1020057010670A KR20057010670A KR101060073B1 KR 101060073 B1 KR101060073 B1 KR 101060073B1 KR 1020057010670 A KR1020057010670 A KR 1020057010670A KR 20057010670 A KR20057010670 A KR 20057010670A KR 101060073 B1 KR101060073 B1 KR 101060073B1
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South Korea
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layer
nitride
substrate
electronic
template type
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KR1020057010670A
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Korean (ko)
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KR20050085575A (ko
Inventor
로버트 드빌린스키
로만 도르지니스키
저지 가르치니스키
레세크 세슈프트라스키
야스오 칸바라
Original Assignee
니치아 카가쿠 고교 가부시키가이샤
암모노 에스피. 제트오. 오.
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Priority claimed from PL02357708A external-priority patent/PL357708A1/xx
Priority claimed from PL357709A external-priority patent/PL225425B1/pl
Priority claimed from PL357696A external-priority patent/PL225423B1/pl
Priority claimed from PL357707A external-priority patent/PL225424B1/pl
Application filed by 니치아 카가쿠 고교 가부시키가이샤, 암모노 에스피. 제트오. 오. filed Critical 니치아 카가쿠 고교 가부시키가이샤
Publication of KR20050085575A publication Critical patent/KR20050085575A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
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    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
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    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
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  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Lasers (AREA)
  • Chemical Vapour Deposition (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Adornments (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
KR1020057010670A 2002-12-11 2003-12-11 템플레이트 타입의 기판 및 그 제조 방법 Expired - Fee Related KR101060073B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
PLP-357696 2002-12-11
PL02357708A PL357708A1 (en) 2002-12-11 2002-12-11 Method of fabrication of epitaxial layer standardized substrate (template type substrates) from voluminal mono-crystalline aluminium nitride and nitride containing gallium for epitaxy of layers with high aluminium content as well as devices requiring efficient heat abstraction
PL357709A PL225425B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania złożonego podłoża standaryzowanego warstwą epitaksjalną (podłoża typu template) z objętościowego monokrystalicznego azotku zawierającego gal
PL357696A PL225423B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża standaryzowanego warstwą epitaksjalną ( podłoża typu template), z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357709 2002-12-11
PLP-357708 2002-12-11
PL357707A PL225424B1 (pl) 2002-12-11 2002-12-11 Sposób wytwarzania podłoża typu template z objętościowego monokrystalicznego azotku zawierającego gal
PLP-357707 2002-12-11
PCT/JP2003/015905 WO2004053209A1 (en) 2002-12-11 2003-12-11 A template type substrate and a method of preparing the same

Publications (2)

Publication Number Publication Date
KR20050085575A KR20050085575A (ko) 2005-08-29
KR101060073B1 true KR101060073B1 (ko) 2011-08-29

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KR1020057010733A Expired - Lifetime KR100789889B1 (ko) 2002-12-11 2003-12-11 에피택시용 기판 및 그 제조방법
KR1020057010670A Expired - Fee Related KR101060073B1 (ko) 2002-12-11 2003-12-11 템플레이트 타입의 기판 및 그 제조 방법

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KR1020057010733A Expired - Lifetime KR100789889B1 (ko) 2002-12-11 2003-12-11 에피택시용 기판 및 그 제조방법

Country Status (10)

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US (3) US7387677B2 (enExample)
EP (2) EP1576210B1 (enExample)
JP (2) JP4558502B2 (enExample)
KR (2) KR100789889B1 (enExample)
AT (2) ATE457372T1 (enExample)
AU (2) AU2003285769A1 (enExample)
DE (2) DE60331245D1 (enExample)
PL (2) PL224992B1 (enExample)
TW (2) TWI334229B (enExample)
WO (2) WO2004053210A1 (enExample)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
HUP0401866A3 (en) * 2001-06-06 2005-12-28 Nichia Corp Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
WO2003043150A1 (en) * 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US20060005763A1 (en) * 2001-12-24 2006-01-12 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
US7638346B2 (en) * 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
AU2002354467A1 (en) * 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
DE60331245D1 (de) * 2002-12-11 2010-03-25 Ammono Sp Zoo Substrat für epitaxie und verfahren zu seiner herstellung
PL224993B1 (pl) * 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
US7351994B2 (en) * 2004-01-21 2008-04-01 Taiwan Semiconductor Manufacturing Company Noble high-k device
WO2005121415A1 (en) 2004-06-11 2005-12-22 Ammono Sp. Z O.O. Bulk mono-crystalline gallium-containing nitride and its application
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7772601B2 (en) * 2005-02-04 2010-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
JP4563230B2 (ja) 2005-03-28 2010-10-13 昭和電工株式会社 ＡｌＧａＮ基板の製造方法
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
JP4277826B2 (ja) * 2005-06-23 2009-06-10 住友電気工業株式会社 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法
KR101045573B1 (ko) 2005-07-06 2011-07-01 인터내쇼널 렉티파이어 코포레이션 Ⅲ족 질화물 인헨스먼트 모드 소자
US20070069225A1 (en) * 2005-09-27 2007-03-29 Lumileds Lighting U.S., Llc III-V light emitting device
US8101020B2 (en) * 2005-10-14 2012-01-24 Ricoh Company, Ltd. Crystal growth apparatus and manufacturing method of group III nitride crystal
JP2009517329A (ja) 2005-11-28 2009-04-30 クリスタル・イズ，インコーポレイテッド 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法
EP1954857B1 (en) 2005-12-02 2018-09-26 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
JP2009530798A (ja) 2006-01-05 2009-08-27 イルミテックス， インコーポレイテッド Ｌｅｄから光を導くための独立した光学デバイス
JP2007277074A (ja) * 2006-01-10 2007-10-25 Ngk Insulators Ltd 窒化アルミニウム単結晶の製造方法及び窒化アルミニウム単結晶
KR100714629B1 (ko) * 2006-03-17 2007-05-07 삼성전기주식회사 질화물 반도체 단결정 기판, 그 제조방법 및 이를 이용한수직구조 질화물 발광소자 제조방법
KR101155061B1 (ko) * 2006-03-22 2012-06-11 삼성코닝정밀소재 주식회사 질화물 반도체 기판 및 이의 제조방법
US8012257B2 (en) * 2006-03-30 2011-09-06 Crystal Is, Inc. Methods for controllable doping of aluminum nitride bulk crystals
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
WO2007117689A2 (en) * 2006-04-07 2007-10-18 The Regents Of The University Of California Growing large surface area gallium nitride crystals
WO2007149487A2 (en) * 2006-06-21 2007-12-27 The Regents Of The University Of California Opto-electronic and electronic devices using n-face or m-plane gan substrate prepared with ammonothermal growth
KR20090064474A (ko) 2006-10-02 2009-06-18 일루미텍스, 인크. Ｌｅｄ 시스템 및 방법
KR20090064379A (ko) 2006-10-16 2009-06-18 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체의 제조 방법, 결정 성장 속도 증가제, 질화물 단결정, 웨이퍼 및 디바이스
JP5125098B2 (ja) * 2006-12-26 2013-01-23 信越半導体株式会社 窒化物半導体自立基板の製造方法
JP2008160025A (ja) * 2006-12-26 2008-07-10 Sharp Corp 窒化物半導体発光素子
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8323406B2 (en) * 2007-01-17 2012-12-04 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) * 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8269251B2 (en) 2007-05-17 2012-09-18 Mitsubishi Chemical Corporation Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting device
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
TWI480435B (zh) 2007-09-19 2015-04-11 Univ California 氮化鎵塊狀晶體（ｂｕｌｋ ｃｒｙｓｔａｌｓ）及其生長方法
EP2240968A1 (en) 2008-02-08 2010-10-20 Illumitex, Inc. System and method for emitter layer shaping
TWI487817B (zh) * 2008-02-25 2015-06-11 Sixpoint Materials Inc 用於製造第iii族氮化物晶圓之方法及第iii族氮化物晶圓
JP2011523931A (ja) * 2008-05-28 2011-08-25 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 低濃度アルカリ金属保有の六方晶系ウルツ鉱型エピタキシャル層およびその生成方法
JP5631746B2 (ja) * 2008-06-04 2014-11-26 シックスポイント マテリアルズ， インコーポレイテッド Ｉｉｉ族窒化物結晶を成長させるための高圧ベッセル、ならびに高圧ベッセルおよびｉｉｉ族窒化物結晶を用いてｉｉｉ族窒化物結晶を成長させる方法
EP2281076A1 (en) 2008-06-04 2011-02-09 Sixpoint Materials, Inc. Methods for producing improved crystallinty group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growth
EP2286007B1 (en) 2008-06-12 2018-04-04 SixPoint Materials, Inc. Method for testing gallium nitride wafers and method for producing gallium nitride wafers
JP5177084B2 (ja) * 2008-08-06 2013-04-03 住友電気工業株式会社 波長変換素子および波長変換素子の製造方法
WO2010045567A1 (en) * 2008-10-16 2010-04-22 Sixpoint Materials, Inc. Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals
KR20110097813A (ko) * 2008-11-07 2011-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Ⅲ족 질화물 결정들의 암모노열 성장을 위한 신규한 용기 설계 및 소스 물질과 씨드 결정들의 상기 용기에 대한 상대적인 배치
US8852341B2 (en) * 2008-11-24 2014-10-07 Sixpoint Materials, Inc. Methods for producing GaN nutrient for ammonothermal growth
JP4867981B2 (ja) * 2008-12-04 2012-02-01 住友電気工業株式会社 ＧａＮ結晶の成長方法
TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
WO2010129718A2 (en) * 2009-05-05 2010-11-11 Sixpoint Materials, Inc. Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
JP5310534B2 (ja) 2009-12-25 2013-10-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
US20120251428A1 (en) * 2010-03-04 2012-10-04 Satoru Morioka Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal
PL224995B1 (pl) 2010-04-06 2017-02-28 Inst Wysokich Ciśnień Polskiej Akademii Nauk Podłoże do wzrostu epitaksjalnego
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
US8436363B2 (en) 2011-02-03 2013-05-07 Soitec Metallic carrier for layer transfer and methods for forming the same
US9142412B2 (en) 2011-02-03 2015-09-22 Soitec Semiconductor devices including substrate layers and overlying semiconductor layers having closely matching coefficients of thermal expansion, and related methods
US9082948B2 (en) 2011-02-03 2015-07-14 Soitec Methods of fabricating semiconductor structures using thermal spray processes, and semiconductor structures fabricated using such methods
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
US8960657B2 (en) 2011-10-05 2015-02-24 Sunedison, Inc. Systems and methods for connecting an ingot to a wire saw
JP5888208B2 (ja) * 2011-11-18 2016-03-16 三菱化学株式会社 窒化物結晶の製造方法
CN103243389B (zh) 2012-02-08 2016-06-08 丰田合成株式会社 制造第III族氮化物半导体单晶的方法及制造GaN衬底的方法
JP5754391B2 (ja) * 2012-02-08 2015-07-29 豊田合成株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
JP2014027092A (ja) * 2012-07-26 2014-02-06 Sharp Corp 半導体発光素子
WO2014097931A1 (ja) 2012-12-17 2014-06-26 三菱化学株式会社 窒化ガリウム基板、および、窒化物半導体結晶の製造方法
JP6275817B2 (ja) 2013-03-15 2018-02-07 クリスタル アイエス, インコーポレーテッドCrystal Is, Inc. 仮像電子及び光学電子装置に対する平面コンタクト
JP5999443B2 (ja) 2013-06-07 2016-09-28 豊田合成株式会社 ＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
JP6015566B2 (ja) 2013-06-11 2016-10-26 豊田合成株式会社 ＩＩＩ 族窒化物半導体のエッチング方法およびＩＩＩ 族窒化物半導体結晶の製造方法およびＧａＮ基板の製造方法
WO2015006712A2 (en) 2013-07-11 2015-01-15 Sixpoint Materials, Inc. An electronic device using group iii nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making it
JP2015115343A (ja) * 2013-12-09 2015-06-22 シャープ株式会社 窒化物半導体素子の製造方法
JP6264990B2 (ja) * 2014-03-26 2018-01-24 日亜化学工業株式会社 窒化物半導体基板の製造方法
CN108023001B (zh) * 2017-11-30 2020-03-10 武汉大学 蚀刻阻挡层结构、含其的外延片及该外延片的制作方法
US11087975B1 (en) * 2018-07-02 2021-08-10 United States Of America As Represented By The Secretary Of The Air Force Method for fabrication of orientation-patterned templates on common substrates
KR20210107098A (ko) * 2019-01-24 2021-08-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 증발 및 열화가 감소된 반도체 필름의 처리 방법
JP7523072B2 (ja) * 2019-02-22 2024-07-26 三菱ケミカル株式会社 ＧａＮ結晶および基板

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002068897A (ja) 2000-08-31 2002-03-08 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶および半導体素子

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3922703A (en) * 1974-04-03 1975-11-25 Rca Corp Electroluminescent semiconductor device
FR2514566A1 (fr) * 1982-02-02 1983-04-15 Bagratishvili Givi Dispositif emetteur de lumiere semi-conducteur a base de nitrure de gallium et procede de fabrication dudit dispositif
JPS6065798A (ja) 1983-09-19 1985-04-15 Toyota Central Res & Dev Lab Inc 窒化ガリウム単結晶の成長方法
CN1014535B (zh) 1988-12-30 1991-10-30 中国科学院物理研究所 利用改进的矿化剂生长磷酸钛氧钾单晶的方法
US5096860A (en) * 1990-05-25 1992-03-17 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
KR920004181B1 (ko) * 1990-09-13 1992-05-30 한국과학기술연구원 입방정질화붕소의 제조방법
US5190738A (en) * 1991-06-17 1993-03-02 Alcan International Limited Process for producing unagglomerated single crystals of aluminum nitride
US5306662A (en) * 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
US5456204A (en) * 1993-05-28 1995-10-10 Alfa Quartz, C.A. Filtering flow guide for hydrothermal crystal growth
GB9412849D0 (en) * 1993-08-02 1994-08-17 Marketing Store Ltd Package
PL173917B1 (pl) * 1993-08-10 1998-05-29 Ct Badan Wysokocisnieniowych P Sposób wytwarzania krystalicznej struktury wielowarstwowej
CN1130925A (zh) * 1993-09-17 1996-09-11 布伦特国际公司 金属表面磷化用的预漂洗液
US5679152A (en) * 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US5599520A (en) * 1994-11-03 1997-02-04 Garces; Juan M. Synthesis of crystalline porous solids in ammonia
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
US5670798A (en) * 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5679965A (en) * 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
JP3728332B2 (ja) * 1995-04-24 2005-12-21 シャープ株式会社 化合物半導体発光素子
US6258617B1 (en) * 1995-08-31 2001-07-10 Kabushiki Kaisha Toshiba Method of manufacturing blue light emitting element
DE69633203T2 (de) * 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
AU7346396A (en) 1995-10-13 1997-04-30 Centrum Badan Wysokocisnieniowych Method of manufacturing epitaxial layers of gan or ga(a1,in)n on single crystal gan and mixed ga(a1,in)n substrates
JP3563869B2 (ja) * 1996-03-25 2004-09-08 トヨタ自動車株式会社 エンジン出力制御装置
CN1065289C (zh) 1996-07-22 2001-05-02 中国科学院物理研究所 一种制备掺杂钒酸盐单晶的水热生长方法
JP3179346B2 (ja) * 1996-08-27 2001-06-25 松下電子工業株式会社 窒化ガリウム結晶の製造方法
JPH1084161A (ja) * 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
US6031858A (en) * 1996-09-09 2000-02-29 Kabushiki Kaisha Toshiba Semiconductor laser and method of fabricating same
WO1998019375A1 (en) * 1996-10-30 1998-05-07 Hitachi, Ltd. Optical information processor and semiconductor light emitting device suitable for the same
US6177292B1 (en) * 1996-12-05 2001-01-23 Lg Electronics Inc. Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
WO1998031055A1 (en) * 1997-01-09 1998-07-16 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6677619B1 (en) * 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US5868837A (en) * 1997-01-17 1999-02-09 Cornell Research Foundation, Inc. Low temperature method of preparing GaN single crystals
PL184902B1 (pl) * 1997-04-04 2003-01-31 Centrum Badan Wysokocisnieniowych Pan Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
JP3491492B2 (ja) * 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
ATE550461T1 (de) 1997-04-11 2012-04-15 Nichia Corp Wachstumsmethode für einen nitrid-halbleiter
US5888389A (en) * 1997-04-24 1999-03-30 Hydroprocessing, L.L.C. Apparatus for oxidizing undigested wastewater sludges
PL183687B1 (pl) * 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
US6270569B1 (en) * 1997-06-11 2001-08-07 Hitachi Cable Ltd. Method of fabricating nitride crystal, mixture, liquid phase growth method, nitride crystal, nitride crystal powders, and vapor phase growth method
TW519551B (en) 1997-06-11 2003-02-01 Hitachi Cable Methods of fabricating nitride crystals and nitride crystals obtained therefrom
GB2333521B (en) 1997-06-11 2000-04-26 Hitachi Cable Nitride crystal growth method
US6593589B1 (en) * 1998-01-30 2003-07-15 The University Of New Mexico Semiconductor nitride structures
US6249534B1 (en) * 1998-04-06 2001-06-19 Matsushita Electronics Corporation Nitride semiconductor laser device
TW428331B (en) * 1998-05-28 2001-04-01 Sumitomo Electric Industries Gallium nitride single crystal substrate and method of producing the same
JPH11340576A (ja) 1998-05-28 1999-12-10 Sumitomo Electric Ind Ltd 窒化ガリウム系半導体デバイス
JP4005701B2 (ja) * 1998-06-24 2007-11-14 シャープ株式会社 窒素化合物半導体膜の形成方法および窒素化合物半導体素子
TW413956B (en) * 1998-07-28 2000-12-01 Sumitomo Electric Industries Fluorescent substrate LED
US6335546B1 (en) * 1998-07-31 2002-01-01 Sharp Kabushiki Kaisha Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device
JP2000091637A (ja) 1998-09-07 2000-03-31 Rohm Co Ltd 半導体発光素子の製法
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
US6252261B1 (en) * 1998-09-30 2001-06-26 Nec Corporation GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
EP1003227B1 (en) * 1998-11-06 2010-01-13 Panasonic Corporation Semiconductor device
TW498102B (en) * 1998-12-28 2002-08-11 Futaba Denshi Kogyo Kk A process for preparing GaN fluorescent substance
US6372041B1 (en) * 1999-01-08 2002-04-16 Gan Semiconductor Inc. Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis
US20020096674A1 (en) * 1999-01-08 2002-07-25 Cho Hak Dong Nucleation layer growth and lift-up of process for GaN wafer
JP2000216494A (ja) 1999-01-20 2000-08-04 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
EP1024524A2 (en) 1999-01-27 2000-08-02 Matsushita Electric Industrial Co., Ltd. Deposition of dielectric layers using supercritical CO2
US6177057B1 (en) * 1999-02-09 2001-01-23 The United States Of America As Represented By The Secretary Of The Navy Process for preparing bulk cubic gallium nitride
JP3399392B2 (ja) * 1999-02-19 2003-04-21 株式会社村田製作所 半導体発光素子、およびその製造方法
ATE452445T1 (de) 1999-03-04 2010-01-15 Nichia Corp Nitridhalbleiterlaserelement
JP3957918B2 (ja) 1999-05-17 2007-08-15 独立行政法人科学技術振興機構 窒化ガリウム単結晶の育成方法
US6592663B1 (en) * 1999-06-09 2003-07-15 Ricoh Company Ltd. Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate
JP4329229B2 (ja) 1999-06-30 2009-09-09 住友電気工業株式会社 Ｉｉｉ−ｖ族窒化物半導体の成長方法および気相成長装置
US6475277B1 (en) * 1999-06-30 2002-11-05 Sumitomo Electric Industries, Ltd. Group III-V nitride semiconductor growth method and vapor phase growth apparatus
FR2796657B1 (fr) * 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
JP3968920B2 (ja) * 1999-08-10 2007-08-29 双葉電子工業株式会社 蛍光体
JP4646359B2 (ja) 1999-09-09 2011-03-09 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2001085737A (ja) * 1999-09-10 2001-03-30 Sharp Corp 窒化物半導体発光素子
US6265322B1 (en) 1999-09-21 2001-07-24 Agere Systems Guardian Corp. Selective growth process for group III-nitride-based semiconductors
CN1113988C (zh) 1999-09-29 2003-07-09 中国科学院物理研究所 一种氮化镓单晶的热液生长方法
US6398867B1 (en) 1999-10-06 2002-06-04 General Electric Company Crystalline gallium nitride and method for forming crystalline gallium nitride
EP1104031B1 (en) 1999-11-15 2012-04-11 Panasonic Corporation Nitride semiconductor laser diode and method of fabricating the same
JP2001168385A (ja) 1999-12-06 2001-06-22 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体発光素子
US6653663B2 (en) * 1999-12-06 2003-11-25 Matsushita Electric Industrial Co., Ltd. Nitride semiconductor device
JP2001185718A (ja) * 1999-12-24 2001-07-06 Hitachi Cable Ltd 窒化ガリウム系化合物半導体を用いた高電子移動度トランジスタ用エピタキシャルウェハの製造方法
US7315599B1 (en) * 1999-12-29 2008-01-01 Intel Corporation Skew correction circuit
US6355497B1 (en) 2000-01-18 2002-03-12 Xerox Corporation Removable large area, low defect density films for led and laser diode growth
JP3335974B2 (ja) 2000-01-24 2002-10-21 星和電機株式会社 窒化ガリウム系半導体発光素子及びその製造方法
US20010015437A1 (en) * 2000-01-25 2001-08-23 Hirotatsu Ishii GaN field-effect transistor, inverter device, and production processes therefor
JP4429459B2 (ja) 2000-03-03 2010-03-10 古河電気工業株式会社 高抵抗ＧａＮ結晶層の製造方法
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
JP3946427B2 (ja) * 2000-03-29 2007-07-18 株式会社東芝 エピタキシャル成長用基板の製造方法及びこのエピタキシャル成長用基板を用いた半導体装置の製造方法
AU2001274810A1 (en) * 2000-04-17 2001-10-30 Virginia Commonwealth University Defect reduction in gan and related materials
JP2001339121A (ja) * 2000-05-29 2001-12-07 Sharp Corp 窒化物半導体発光素子とそれを含む光学装置
GB2363518A (en) * 2000-06-17 2001-12-19 Sharp Kk A method of growing a nitride layer on a GaN substrate
US6693935B2 (en) * 2000-06-20 2004-02-17 Sony Corporation Semiconductor laser
JP2002016285A (ja) * 2000-06-27 2002-01-18 National Institute Of Advanced Industrial & Technology 半導体発光素子
US6586762B2 (en) * 2000-07-07 2003-07-01 Nichia Corporation Nitride semiconductor device with improved lifetime and high output power
JP3968968B2 (ja) * 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
US6749819B2 (en) * 2000-07-28 2004-06-15 Japan Pionics Co., Ltd. Process for purifying ammonia
JP4154558B2 (ja) * 2000-09-01 2008-09-24 日本電気株式会社 半導体装置
US6858882B2 (en) * 2000-09-08 2005-02-22 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting device and optical device including the same
JP4416297B2 (ja) * 2000-09-08 2010-02-17 シャープ株式会社 窒化物半導体発光素子、ならびにそれを使用した発光装置および光ピックアップ装置
JP2002094189A (ja) * 2000-09-14 2002-03-29 Sharp Corp 窒化物半導体レーザ素子およびそれを用いた光学装置
JP2002134416A (ja) 2000-10-19 2002-05-10 Ricoh Co Ltd ｐ型３族窒化物の結晶成長方法および製造方法、並びに半導体素子
US6936488B2 (en) 2000-10-23 2005-08-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
US7053413B2 (en) * 2000-10-23 2006-05-30 General Electric Company Homoepitaxial gallium-nitride-based light emitting device and method for producing
AU2002219966A1 (en) 2000-11-30 2002-06-11 North Carolina State University Methods and apparatus for producing m'n based materials
JP4063520B2 (ja) * 2000-11-30 2008-03-19 日本碍子株式会社 半導体発光素子
JP4003413B2 (ja) 2000-12-11 2007-11-07 日亜化学工業株式会社 １３族窒化物結晶の製造方法
JP3785566B2 (ja) 2001-03-19 2006-06-14 株式会社日鉱マテリアルズ ＧａＮ系化合物半導体結晶の製造方法
US6806508B2 (en) * 2001-04-20 2004-10-19 General Electic Company Homoepitaxial gallium nitride based photodetector and method of producing
JP4633962B2 (ja) 2001-05-18 2011-02-16 日亜化学工業株式会社 窒化物半導体基板の製造方法
US6734530B2 (en) 2001-06-06 2004-05-11 Matsushita Electric Industries Co., Ltd. GaN-based compound semiconductor EPI-wafer and semiconductor element using the same
HUP0401866A3 (en) * 2001-06-06 2005-12-28 Nichia Corp Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
PL207400B1 (pl) * 2001-06-06 2010-12-31 Ammono Społka Z Ograniczoną Odpowiedzialnością Sposób i urządzenie do otrzymywania objętościowego monokryształu azotku zawierającego gal
US6488767B1 (en) * 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2002009392A (ja) 2001-06-22 2002-01-11 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
US6562466B2 (en) 2001-07-02 2003-05-13 Essilor International Compagnie Generale D'optique Process for transferring a coating onto a surface of a lens blank
AU2002347692C1 (en) * 2001-10-26 2008-03-06 Ammono Sp. Zo.O. Bulk monocrystalline gallium nitride
WO2003043150A1 (en) 2001-10-26 2003-05-22 Ammono Sp.Zo.O. Light emitting element structure using nitride bulk single crystal layer
US6949140B2 (en) 2001-12-05 2005-09-27 Ricoh Company, Ltd. Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device
US7097707B2 (en) * 2001-12-31 2006-08-29 Cree, Inc. GaN boule grown from liquid melt using GaN seed wafers
US20030209191A1 (en) 2002-05-13 2003-11-13 Purdy Andrew P. Ammonothermal process for bulk synthesis and growth of cubic GaN
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
AU2002354467A1 (en) 2002-05-17 2003-12-02 Ammono Sp.Zo.O. Light emitting element structure having nitride bulk single crystal layer
WO2003097906A1 (en) 2002-05-17 2003-11-27 Ammono Sp.Zo.O. Bulk single crystal production facility employing supercritical ammonia
WO2004004085A2 (en) 2002-06-26 2004-01-08 Ammono Sp.Zo.O. Nitride semiconductor laser device and a method for improving its performance
US7364619B2 (en) * 2002-06-26 2008-04-29 Ammono. Sp. Zo.O. Process for obtaining of bulk monocrystalline gallium-containing nitride
US7099073B2 (en) * 2002-09-27 2006-08-29 Lucent Technologies Inc. Optical frequency-converters based on group III-nitrides
DE60331245D1 (de) * 2002-12-11 2010-03-25 Ammono Sp Zoo Substrat für epitaxie und verfahren zu seiner herstellung
PL224993B1 (pl) 2002-12-11 2017-02-28 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
WO2004053208A1 (en) 2002-12-11 2004-06-24 Ammono Sp. Z O.O. Process for obtaining bulk-crystalline gallium-containing nitride
KR100902525B1 (ko) 2003-04-03 2009-06-15 미쓰비시 가가꾸 가부시키가이샤 산화아연 단결정
WO2005121415A1 (en) 2004-06-11 2005-12-22 Ammono Sp. Z O.O. Bulk mono-crystalline gallium-containing nitride and its application
EP1759408A1 (en) 2004-06-11 2007-03-07 AMMONO Sp.z o.o. High electron mobility transistor (hemt) made of layers of group xiii element nitrides and manufacturing method thereof.
PL371405A1 (pl) 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
US7704324B2 (en) 2005-01-25 2010-04-27 General Electric Company Apparatus for processing materials in supercritical fluids and methods thereof
WO2007117689A2 (en) 2006-04-07 2007-10-18 The Regents Of The University Of California Growing large surface area gallium nitride crystals
US7803344B2 (en) 2006-10-25 2010-09-28 The Regents Of The University Of California Method for growing group III-nitride crystals in a mixture of supercritical ammonia and nitrogen, and group III-nitride crystals grown thereby
TWI480435B (zh) 2007-09-19 2015-04-11 Univ California 氮化鎵塊狀晶體（ｂｕｌｋ ｃｒｙｓｔａｌｓ）及其生長方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002068897A (ja) 2000-08-31 2002-03-08 Ricoh Co Ltd Ｉｉｉ族窒化物結晶の結晶成長方法および結晶成長装置およびｉｉｉ族窒化物結晶および半導体素子

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