KR100957729B1 - 이상적 산소 침전 실리콘 웨이퍼의 제조 방법 - Google Patents

이상적 산소 침전 실리콘 웨이퍼의 제조 방법 Download PDF

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Publication number
KR100957729B1
KR100957729B1 KR1020017002616A KR20017002616A KR100957729B1 KR 100957729 B1 KR100957729 B1 KR 100957729B1 KR 1020017002616 A KR1020017002616 A KR 1020017002616A KR 20017002616 A KR20017002616 A KR 20017002616A KR 100957729 B1 KR100957729 B1 KR 100957729B1
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wafer
oxygen
crystal lattice
silicon
atmosphere
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KR20010082183A (ko
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팔스떼르로베르뜨제이
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엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020017002616A 1998-09-02 1999-08-27 이상적 산소 침전 실리콘 웨이퍼의 제조 방법 Expired - Fee Related KR100957729B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9886198P 1998-09-02 1998-09-02
US60/098,861 1998-09-02

Publications (2)

Publication Number Publication Date
KR20010082183A KR20010082183A (ko) 2001-08-29
KR100957729B1 true KR100957729B1 (ko) 2010-05-12

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KR1020017002616A Expired - Fee Related KR100957729B1 (ko) 1998-09-02 1999-08-27 이상적 산소 침전 실리콘 웨이퍼의 제조 방법

Country Status (8)

Country Link
US (3) US6191010B1 (enExample)
EP (1) EP1110240B1 (enExample)
JP (1) JP4405083B2 (enExample)
KR (1) KR100957729B1 (enExample)
CN (1) CN1155064C (enExample)
DE (1) DE69933777T2 (enExample)
TW (1) TW425636B (enExample)
WO (1) WO2000013226A1 (enExample)

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US7846822B2 (en) * 2004-07-30 2010-12-07 The Board Of Trustees Of The University Of Illinois Methods for controlling dopant concentration and activation in semiconductor structures
JP5117671B2 (ja) * 2004-10-19 2013-01-16 シルトロン インク 高品質単結晶及びその成長方法
US20060138601A1 (en) * 2004-12-27 2006-06-29 Memc Electronic Materials, Inc. Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers
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CN101228301A (zh) * 2005-05-19 2008-07-23 Memc电子材料有限公司 高电阻率硅结构和用于制备该结构的方法
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
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US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US7968440B2 (en) * 2008-03-19 2011-06-28 The Board Of Trustees Of The University Of Illinois Preparation of ultra-shallow semiconductor junctions using intermediate temperature ramp rates and solid interfaces for defect engineering
JP2009231429A (ja) * 2008-03-21 2009-10-08 Covalent Materials Corp シリコンウェーハの製造方法
JP5561918B2 (ja) * 2008-07-31 2014-07-30 グローバルウェーハズ・ジャパン株式会社 シリコンウェーハの製造方法
US8476149B2 (en) * 2008-07-31 2013-07-02 Global Wafers Japan Co., Ltd. Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
JP5062217B2 (ja) * 2009-04-30 2012-10-31 株式会社Ｓｕｍｃｏ 半導体ウェーハの製造方法
US8871670B2 (en) 2011-01-05 2014-10-28 The Board Of Trustees Of The University Of Illinois Defect engineering in metal oxides via surfaces
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KR20220044806A (ko) 2019-08-09 2022-04-11 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. 산소 농도가 낮은 영역이 있는 리본 또는 웨이퍼의 제조

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Also Published As

Publication number Publication date
TW425636B (en) 2001-03-11
DE69933777D1 (de) 2006-12-07
US6579779B1 (en) 2003-06-17
US20030221609A1 (en) 2003-12-04
WO2000013226A9 (en) 2001-11-22
CN1317152A (zh) 2001-10-10
EP1110240B1 (en) 2006-10-25
CN1155064C (zh) 2004-06-23
US6713370B2 (en) 2004-03-30
US6191010B1 (en) 2001-02-20
EP1110240A1 (en) 2001-06-27
DE69933777T2 (de) 2007-09-13
WO2000013226A1 (en) 2000-03-09
JP2002524852A (ja) 2002-08-06
JP4405083B2 (ja) 2010-01-27
KR20010082183A (ko) 2001-08-29

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