SG105513A1 - Low defect density, ideal oxygen precipitating silicon - Google Patents

Low defect density, ideal oxygen precipitating silicon

Info

Publication number
SG105513A1
SG105513A1 SG200105905A SG200105905A SG105513A1 SG 105513 A1 SG105513 A1 SG 105513A1 SG 200105905 A SG200105905 A SG 200105905A SG 200105905 A SG200105905 A SG 200105905A SG 105513 A1 SG105513 A1 SG 105513A1
Authority
SG
Singapore
Prior art keywords
defect density
low defect
precipitating silicon
ideal oxygen
oxygen precipitating
Prior art date
Application number
SG200105905A
Inventor
Falster Robert
A Makrgraf Steve
A Mcquaid Seamus
C Holzer Joseph
Mutti Paolo
K Johnson Bayard
Cornara Marco
Gambaro Daniela
Olmo Massimiliano
Original Assignee
Memc Electronics Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Electronics Materials Inc filed Critical Memc Electronics Materials Inc
Publication of SG105513A1 publication Critical patent/SG105513A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y10T428/249967—Inorganic matrix in void-containing component
    • Y10T428/249969—Of silicon-containing material [e.g., glass, etc.]
SG200105905A 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon SG105513A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4184597P 1997-04-09 1997-04-09
US6231697P 1997-10-17 1997-10-17

Publications (1)

Publication Number Publication Date
SG105513A1 true SG105513A1 (en) 2004-08-27

Family

ID=26718604

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200601434-4A SG151096A1 (en) 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon
SG200105905A SG105513A1 (en) 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG200601434-4A SG151096A1 (en) 1997-04-09 1998-04-09 Low defect density, ideal oxygen precipitating silicon

Country Status (9)

Country Link
US (5) US6190631B1 (en)
EP (2) EP0973962B1 (en)
JP (3) JP3449729B2 (en)
KR (2) KR20010006202A (en)
CN (1) CN1316072C (en)
DE (2) DE69841714D1 (en)
MY (2) MY135749A (en)
SG (2) SG151096A1 (en)
WO (1) WO1998045507A1 (en)

Families Citing this family (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503594B2 (en) * 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE69813041T2 (en) 1997-04-09 2004-01-15 Memc Electronic Materials Cut-off dominating silicon with low defect density
US6379642B1 (en) 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
EP0973962B1 (en) * 1997-04-09 2002-07-03 MEMC Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
US5981534A (en) 1998-09-25 1999-11-09 American Cyanamid Company Fungicidal 6-(2,6-difluoro-4-alkoxyphenyl)-triazolopyrimidines
JP3943717B2 (en) 1998-06-11 2007-07-11 信越半導体株式会社 Silicon single crystal wafer and manufacturing method thereof
KR20010041957A (en) 1998-06-26 2001-05-25 헨넬리 헬렌 에프 Process for growth of defect free silicon crystals of arbitrarily large diameters
EP1484789A1 (en) * 1998-08-05 2004-12-08 MEMC Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US6828690B1 (en) 1998-08-05 2004-12-07 Memc Electronic Materials, Inc. Non-uniform minority carrier lifetime distributions in high performance silicon power devices
US6336968B1 (en) 1998-09-02 2002-01-08 Memc Electronic Materials, Inc. Non-oxygen precipitating czochralski silicon wafers
DE69941196D1 (en) 1998-09-02 2009-09-10 Memc Electronic Materials Heat treated silicon wafers with improved self-termination
EP1914796B1 (en) * 1998-09-02 2012-06-06 MEMC Electronic Materials, Inc. Method of forming non-oxygen precipitating Czochralski silicon wafers
DE69933777T2 (en) 1998-09-02 2007-09-13 Memc Electronic Materials, Inc. METHOD FOR PRODUCING A SILICON WAFER WITH IDEAL OXYGEN FILLING BEHAVIOR
CN1155074C (en) * 1998-09-02 2004-06-23 Memc电子材料有限公司 Silicon on insulator structure from low-defect density single crystal silicon
EP1713121A3 (en) * 1998-09-02 2007-08-15 MEMC Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
CN1313651C (en) 1998-10-14 2007-05-02 Memc电子材料有限公司 Epitaxial silicon wafers substantially free of grown-in defects
US6416836B1 (en) 1998-10-14 2002-07-09 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
EP1127175B1 (en) * 1998-10-14 2002-08-14 MEMC Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP2000154070A (en) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd Ceramic three dimensional structure and its production
JP3601324B2 (en) * 1998-11-19 2004-12-15 信越半導体株式会社 Silicon single crystal wafer with few crystal defects and method of manufacturing the same
TW505710B (en) 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
US6284384B1 (en) 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
JP2000277404A (en) * 1999-03-26 2000-10-06 Mitsubishi Materials Silicon Corp Silicon wafer
DE19918833C2 (en) * 1999-04-22 2002-10-31 Atotech Deutschland Gmbh Process for the electrolytic deposition of a metal layer on surfaces of an electrically non-conductive substrate and application of the method
US20030051656A1 (en) 1999-06-14 2003-03-20 Charles Chiun-Chieh Yang Method for the preparation of an epitaxial silicon wafer with intrinsic gettering
JP4748178B2 (en) * 1999-07-28 2011-08-17 株式会社Ｓｕｍｃｏ Method for producing silicon wafer free of agglomerates of point defects
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
WO2001021861A1 (en) * 1999-09-23 2001-03-29 Memc Electronic Materials, Inc. Czochralski process for growing single crystal silicon by controlling the cooling rate
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
JP3994602B2 (en) * 1999-11-12 2007-10-24 信越半導体株式会社 Silicon single crystal wafer, manufacturing method thereof, and SOI wafer
KR100378184B1 (en) * 1999-11-13 2003-03-29 삼성전자주식회사 Silicon wafer having controlled distribution of defects, process for the preparation of the same and czochralski puller for manufacturing monocrystalline silicon ingot
JP3846627B2 (en) * 2000-04-14 2006-11-15 信越半導体株式会社 Silicon wafer, silicon epitaxial wafer, annealed wafer, and manufacturing method thereof
US6599815B1 (en) 2000-06-30 2003-07-29 Memc Electronic Materials, Inc. Method and apparatus for forming a silicon wafer with a denuded zone
US6339016B1 (en) 2000-06-30 2002-01-15 Memc Electronic Materials, Inc. Method and apparatus for forming an epitaxial silicon wafer with a denuded zone
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US8529695B2 (en) 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer
JP4720058B2 (en) 2000-11-28 2011-07-13 株式会社Ｓｕｍｃｏ Silicon wafer manufacturing method
KR100708788B1 (en) * 2001-01-02 2007-04-19 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Process for preparing single crystal silicon having improved gate oxide integrity
KR100805518B1 (en) * 2001-01-26 2008-02-20 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Low defect density silicon having a vacancy-dominated core substantially free of oxidation induced stacking faults
US6743495B2 (en) 2001-03-30 2004-06-01 Memc Electronic Materials, Inc. Thermal annealing process for producing silicon wafers with improved surface characteristics
KR100745312B1 (en) * 2001-04-10 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Control of thermal donor formation in high resistivity cz silicon
TWI256076B (en) * 2001-04-11 2006-06-01 Memc Electronic Materials Control of thermal donor formation in high resistivity CZ silicon
TW541581B (en) * 2001-04-20 2003-07-11 Memc Electronic Materials Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
WO2003001583A2 (en) * 2001-06-22 2003-01-03 Memc Electronic Materials, Inc. Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
JP4154881B2 (en) * 2001-10-03 2008-09-24 株式会社Ｓｕｍｃｏ Heat treatment method for silicon semiconductor substrate
US6669775B2 (en) 2001-12-06 2003-12-30 Seh America, Inc. High resistivity silicon wafer produced by a controlled pull rate czochralski method
TWI276161B (en) * 2001-12-21 2007-03-11 Memc Electronic Materials Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same
US7201800B2 (en) 2001-12-21 2007-04-10 Memc Electronic Materials, Inc. Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
US6808781B2 (en) 2001-12-21 2004-10-26 Memc Electronic Materials, Inc. Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same
TWI303282B (en) * 2001-12-26 2008-11-21 Sumco Techxiv Corp Method for eliminating defects from single crystal silicon, and single crystal silicon
KR100745309B1 (en) * 2002-04-10 2007-08-01 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 Process for controlling denuded zone depth in an ideal oxygen precipitating silicon wafer
JP2003321297A (en) * 2002-04-25 2003-11-11 Shin Etsu Handotai Co Ltd Method for producing silicon single crystal and silicon single crystal wafer
JP4092946B2 (en) * 2002-05-09 2008-05-28 信越半導体株式会社 Silicon single crystal wafer, epitaxial wafer, and method for producing silicon single crystal
TWI231357B (en) * 2002-10-18 2005-04-21 Sumitomo Mitsubishi Silicon Method for measuring defect-distribution in silicon monocrystal ingot
DE60334722D1 (en) * 2002-11-12 2010-12-09 Memc Electronic Materials PROCESS FOR THE MANUFACTURE OF A SILICONE INCRISTALITY TEMPERATURE GRADIENTEN TO CONTROL
US6916324B2 (en) * 2003-02-04 2005-07-12 Zimmer Technology, Inc. Provisional orthopedic prosthesis for partially resected bone
KR100588425B1 (en) * 2003-03-27 2006-06-12 실트로닉 아게 Method for the Production of a Silicon Single Crystal, Silicon Single Crystal and Silicon Semiconductor Wafers with determined Defect Distributions
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
KR100531552B1 (en) * 2003-09-05 2005-11-28 주식회사 하이닉스반도체 Silicon wafer and method of fabricating the same
JP4396640B2 (en) * 2004-02-03 2010-01-13 信越半導体株式会社 Semiconductor wafer manufacturing method and semiconductor ingot cutting position determination system
US7074271B2 (en) * 2004-02-23 2006-07-11 Sumitomo Mitsubishi Silicon Corporation Method of identifying defect distribution in silicon single crystal ingot
JP2006054350A (en) 2004-08-12 2006-02-23 Komatsu Electronic Metals Co Ltd Nitrogen-doped silicon wafer and its manufacturing method
JP4743010B2 (en) 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ Silicon wafer surface defect evaluation method
US7485928B2 (en) * 2005-11-09 2009-02-03 Memc Electronic Materials, Inc. Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering
US7633307B2 (en) * 2005-12-16 2009-12-15 Freescale Semiconductor, Inc. Method for determining temperature profile in semiconductor manufacturing test
JP4853027B2 (en) * 2006-01-17 2012-01-11 信越半導体株式会社 Method for producing silicon single crystal wafer
JP2007194232A (en) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd Process for producing silicon single crystal wafer
JP5138678B2 (en) * 2006-05-19 2013-02-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Control of formation of cohesive point defects and oxygen clusters induced from silicon single crystal side surface during CZ growth
JP5239155B2 (en) 2006-06-20 2013-07-17 信越半導体株式会社 Method for manufacturing silicon wafer
CN101191250B (en) * 2006-11-21 2010-09-08 上海华虹Nec电子有限公司 Method for detecting normal growth of epitaxy single-crystal
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
JP5167654B2 (en) 2007-02-26 2013-03-21 信越半導体株式会社 Method for producing silicon single crystal wafer
US7732353B2 (en) * 2007-04-18 2010-06-08 Ultratech, Inc. Methods of forming a denuded zone in a semiconductor wafer using rapid laser annealing
US7799600B2 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US20090004458A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Diffusion Control in Heavily Doped Substrates
US20090004426A1 (en) * 2007-06-29 2009-01-01 Memc Electronic Materials, Inc. Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates
JP5311930B2 (en) * 2007-08-29 2013-10-09 住友化学株式会社 Method for producing silicon
JP2009212354A (en) * 2008-03-05 2009-09-17 Sumco Corp Method of manufacturing silicon substrate
JP5276863B2 (en) * 2008-03-21 2013-08-28 グローバルウェーハズ・ジャパン株式会社 Silicon wafer
JP2009231429A (en) * 2008-03-21 2009-10-08 Covalent Materials Corp Method of manufacturing silicon wafer
JP5151628B2 (en) 2008-04-02 2013-02-27 信越半導体株式会社 Silicon single crystal wafer, silicon single crystal manufacturing method, and semiconductor device
JP2010028065A (en) * 2008-07-24 2010-02-04 Sumco Corp Method for manufacturing silicon wafer
US7939432B2 (en) * 2008-12-15 2011-05-10 Macronix International Co., Ltd. Method of improving intrinsic gettering ability of wafer
WO2010119614A1 (en) 2009-04-13 2010-10-21 信越半導体株式会社 Anneal wafer, method for manufacturing anneal wafer, and method for manufacturing device
JP2011138955A (en) * 2009-12-28 2011-07-14 Siltronic Japan Corp Silicon wafer and manufacturing method therefor
JP5439305B2 (en) 2010-07-14 2014-03-12 信越半導体株式会社 Silicon substrate manufacturing method and silicon substrate
JP5530856B2 (en) 2010-08-18 2014-06-25 信越半導体株式会社 Wafer heat treatment method, silicon wafer production method, and heat treatment apparatus
JP5572569B2 (en) 2011-02-24 2014-08-13 信越半導体株式会社 Silicon substrate manufacturing method and silicon substrate
JP5518776B2 (en) * 2011-03-25 2014-06-11 三菱マテリアル株式会社 Silicon ingot manufacturing apparatus, silicon ingot manufacturing method, silicon ingot, silicon wafer, solar cell, and silicon part
US9064823B2 (en) * 2013-03-13 2015-06-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for qualifying a semiconductor wafer for subsequent processing
US10141413B2 (en) 2013-03-13 2018-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer strength by control of uniformity of edge bulk micro defects
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
KR102384041B1 (en) 2014-07-31 2022-04-08 글로벌웨이퍼스 씨오., 엘티디. Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
JP6044660B2 (en) 2015-02-19 2016-12-14 信越半導体株式会社 Silicon wafer manufacturing method
JP6786905B2 (en) * 2016-06-27 2020-11-18 株式会社Sumco Method for manufacturing silicon single crystal
CN108660513A (en) * 2017-03-28 2018-10-16 上海新昇半导体科技有限公司 A kind of device and method reducing wafer defect
CN109346433B (en) * 2018-09-26 2020-10-23 上海新傲科技股份有限公司 Method for bonding semiconductor substrate and bonded semiconductor substrate
CN110389108A (en) * 2019-08-16 2019-10-29 西安奕斯伟硅片技术有限公司 A kind of detection method and device of monocrystalline silicon defect area
CN113549997B (en) * 2021-06-25 2023-01-24 徐州鑫晶半导体科技有限公司 Method and apparatus for growing single crystal, and single crystal
CN114280072B (en) * 2021-12-23 2023-06-20 宁夏中欣晶圆半导体科技有限公司 Method for detecting BMD in monocrystalline silicon body

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0812493A (en) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp Production of silicon single crystal
US5487354A (en) * 1993-12-16 1996-01-30 Wacker-Chemitronic Gesellschaft Fuer Eletronik-Grundstoffe Mbh Method for pulling a silicon single crystal
JPH08330316A (en) * 1995-05-31 1996-12-13 Sumitomo Sitix Corp Silicon single crystal wafer and its production

Family Cites Families (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US405759A (en) * 1889-06-25 Gearing
DE155531C (en)
US3997368A (en) * 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
JPS583375B2 (en) * 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 Manufacturing method of silicon single crystal wafer
JPS5680139A (en) 1979-12-05 1981-07-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
JPS59190300A (en) 1983-04-08 1984-10-29 Hitachi Ltd Method and apparatus for production of semiconductor
US4548654A (en) * 1983-06-03 1985-10-22 Motorola, Inc. Surface denuding of silicon wafer
US4505759A (en) 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
CN1008452B (en) 1985-04-01 1990-06-20 北京科技大学 The new way of preparation monocrystalline silicon sheet surface unbroken layer
JPS62105998A (en) 1985-10-31 1987-05-16 Sony Corp Production of silicon substrate
US4868133A (en) 1988-02-11 1989-09-19 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using RTA
US4851358A (en) 1988-02-11 1989-07-25 Dns Electronic Materials, Inc. Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing
US5264189A (en) 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
US4981549A (en) 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH01242500A (en) 1988-03-25 1989-09-27 Mitsubishi Metal Corp Production of silicon substrate
JPH0232535A (en) 1988-07-21 1990-02-02 Kyushu Electron Metal Co Ltd Manufacture of silicon substrate for semiconductor device
JPH02180789A (en) 1989-01-05 1990-07-13 Kawasaki Steel Corp Production of si single crystal
US5487345A (en) * 1989-03-09 1996-01-30 Unipal International Corporation Parametrically wrapped pallet member and pallet constructed thereof
JPH0633235B2 (en) 1989-04-05 1994-05-02 新日本製鐵株式会社 Silicon single crystal excellent in oxide film withstand voltage characteristic and method for manufacturing the same
JPH039078A (en) 1989-06-05 1991-01-16 Komatsu Ltd Cam plate type piston motor
JPH0633236B2 (en) 1989-09-04 1994-05-02 新日本製鐵株式会社 Method and apparatus for heat treating silicon single crystal and manufacturing apparatus
JPH03185831A (en) 1989-12-15 1991-08-13 Komatsu Denshi Kinzoku Kk Manufacture of semiconductor device
JPH0729878B2 (en) 1990-06-07 1995-04-05 三菱マテリアル株式会社 Silicon wafer
JPH04108682A (en) 1990-08-30 1992-04-09 Fuji Electric Co Ltd Device for producing compound semiconductor single crystal and production
IT1242014B (en) 1990-11-15 1994-02-02 Memc Electronic Materials PROCEDURE FOR THE TREATMENT OF SILICON SLICES TO OBTAIN IN IT CONTROLLED PRECIPITATION PROFILES FOR THE PRODUCTION OF ELECTRONIC COMPONENTS.
JP2613498B2 (en) 1991-03-15 1997-05-28 信越半導体株式会社 Heat treatment method for Si single crystal wafer
JP3016897B2 (en) 1991-03-20 2000-03-06 信越半導体株式会社 Method and apparatus for producing silicon single crystal
JPH04294540A (en) 1991-03-25 1992-10-19 Nippon Steel Corp Manufacture of semiconductor device
US5267189A (en) 1991-09-30 1993-11-30 Wilke William G Rational fraction synthesizer
JP2758093B2 (en) 1991-10-07 1998-05-25 信越半導体株式会社 Manufacturing method of semiconductor wafer
JP2726583B2 (en) 1991-11-18 1998-03-11 三菱マテリアルシリコン株式会社 Semiconductor substrate
JPH05155700A (en) 1991-12-04 1993-06-22 Nippon Steel Corp Production of gettering wafer having lamination defect generating nuclei and silicon wafer produced by the method
US5296047A (en) 1992-01-28 1994-03-22 Hewlett-Packard Co. Epitaxial silicon starting material
JPH0684925A (en) * 1992-07-17 1994-03-25 Toshiba Corp Semiconductor substrate and its treatment
US5403408A (en) * 1992-10-19 1995-04-04 Inland Steel Company Non-uniaxial permanent magnet material
US5485803A (en) 1993-01-06 1996-01-23 Nippon Steel Corporation Method of predicting crystal quality of semiconductor single crystal and apparatus thereof
KR0139730B1 (en) * 1993-02-23 1998-06-01 사또오 후미오 Semiconductor substrate and its manufacture
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
JPH0786289A (en) 1993-07-22 1995-03-31 Toshiba Corp Semiconductor silicon wafer and its manufacture
JPH0741383A (en) 1993-07-29 1995-02-10 Nippon Steel Corp Semiconductor single crystal and production thereof
JPH07158458A (en) 1993-12-10 1995-06-20 Mitsubishi Motors Corp Intake control device for multiple cylinder internal combustion engine
DE4414947C2 (en) 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Method of pulling a single crystal from silicon
JP2725586B2 (en) 1993-12-30 1998-03-11 日本電気株式会社 Method for manufacturing silicon substrate
JP3276500B2 (en) 1994-01-14 2002-04-22 ワッカー・エヌエスシーイー株式会社 Silicon wafer and manufacturing method thereof
US5445975A (en) 1994-03-07 1995-08-29 Advanced Micro Devices, Inc. Semiconductor wafer with enhanced pre-process denudation and process-induced gettering
JP2895743B2 (en) * 1994-03-25 1999-05-24 信越半導体株式会社 Method for manufacturing SOI substrate
US5548654A (en) 1994-04-07 1996-08-20 Fast; Lawrence R. Infrared audio transmitter system
US5474020A (en) 1994-05-06 1995-12-12 Texas Instruments Incorporated Oxygen precipitation control in czochralski-grown silicon cyrstals
JPH07321120A (en) 1994-05-25 1995-12-08 Komatsu Electron Metals Co Ltd Heat treatment of silicon wafer
JP3458342B2 (en) 1994-06-03 2003-10-20 コマツ電子金属株式会社 Silicon wafer manufacturing method and silicon wafer
JP2874834B2 (en) * 1994-07-29 1999-03-24 三菱マテリアル株式会社 Intrinsic gettering method for silicon wafer
JPH0845944A (en) 1994-07-29 1996-02-16 Sumitomo Sitix Corp Manufacture of silicon wafer
JPH0845947A (en) 1994-08-03 1996-02-16 Nippon Steel Corp Thermal treatment method of silicon substrate
JP3285111B2 (en) * 1994-12-05 2002-05-27 信越半導体株式会社 Method for producing silicon single crystal with few crystal defects
JPH08208374A (en) 1995-01-25 1996-08-13 Nippon Steel Corp Silicon single crystal and its production
JPH08203913A (en) * 1995-01-27 1996-08-09 Toshiba Corp Method of heat-treating semiconductor wafer
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
US5788763A (en) * 1995-03-09 1998-08-04 Toshiba Ceramics Co., Ltd. Manufacturing method of a silicon wafer having a controlled BMD concentration
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JP2826589B2 (en) 1995-03-30 1998-11-18 住友シチックス株式会社 Single crystal silicon growing method
JPH08337490A (en) 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd Silicon single crystal almost free from crystal defect and its production
JP3006669B2 (en) 1995-06-20 2000-02-07 信越半導体株式会社 Method and apparatus for producing silicon single crystal having uniform crystal defects
JP3381816B2 (en) 1996-01-17 2003-03-04 三菱住友シリコン株式会社 Semiconductor substrate manufacturing method
JP4020987B2 (en) 1996-01-19 2007-12-12 信越半導体株式会社 Silicon single crystal having no crystal defects around the wafer and its manufacturing method
JP4189041B2 (en) * 1996-02-15 2008-12-03 東芝マイクロエレクトロニクス株式会社 Manufacturing method of semiconductor substrate and inspection method thereof
DE19613282A1 (en) 1996-04-03 1997-10-09 Leybold Ag Device for pulling single crystals
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
DE19637182A1 (en) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Process for the production of silicon wafers with low defect density
JPH10152395A (en) 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd Production of silicon single crystal
KR100240023B1 (en) 1996-11-29 2000-01-15 윤종용 Method of annealing semiconductor wafer and semiconductor wafer using the same
EP0954018B1 (en) 1996-12-03 2010-02-17 Sumco Corporation Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor device
US6485807B1 (en) * 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6045610A (en) 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6503594B2 (en) * 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US5994761A (en) 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE19711922A1 (en) 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Device and method for pulling a single crystal
DE69813041T2 (en) 1997-04-09 2004-01-15 Memc Electronic Materials Cut-off dominating silicon with low defect density
EP0973962B1 (en) 1997-04-09 2002-07-03 MEMC Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
US5925320A (en) * 1997-06-04 1999-07-20 Jones; John P. Air purification system
JPH1179889A (en) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby
JP3144631B2 (en) 1997-08-08 2001-03-12 住友金属工業株式会社 Heat treatment method for silicon semiconductor substrate
TW429478B (en) 1997-08-29 2001-04-11 Toshiba Corp Semiconductor device and method for manufacturing the same
US6340392B1 (en) * 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
JPH11150119A (en) 1997-11-14 1999-06-02 Sumitomo Sitix Corp Method and device for heat-treating silicon semiconductor substance
JP3596257B2 (en) 1997-11-19 2004-12-02 三菱住友シリコン株式会社 Manufacturing method of silicon single crystal wafer
JP3634133B2 (en) 1997-12-17 2005-03-30 信越半導体株式会社 Method for producing silicon single crystal with few crystal defects and silicon single crystal wafer
JP4147599B2 (en) 1997-12-26 2008-09-10 株式会社Ｓｕｍｃｏ Silicon single crystal and manufacturing method thereof
JP3627498B2 (en) 1998-01-19 2005-03-09 信越半導体株式会社 Method for producing silicon single crystal
JP3955375B2 (en) 1998-01-19 2007-08-08 信越半導体株式会社 Silicon single crystal manufacturing method and silicon single crystal wafer
JPH11349393A (en) 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd Silicon single crystal wafer and production of silicon single crystal wafer
US6077343A (en) 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
JPH11354525A (en) 1998-06-11 1999-12-24 Shin Etsu Handotai Co Ltd Manufacture of silicon epitaxial wafer
US6689209B2 (en) * 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5487354A (en) * 1993-12-16 1996-01-30 Wacker-Chemitronic Gesellschaft Fuer Eletronik-Grundstoffe Mbh Method for pulling a silicon single crystal
JPH0812493A (en) * 1994-06-30 1996-01-16 Sumitomo Sitix Corp Production of silicon single crystal
JPH08330316A (en) * 1995-05-31 1996-12-13 Sumitomo Sitix Corp Silicon single crystal wafer and its production

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