CN101191250B - Method for detecting normal growth of epitaxy single-crystal - Google Patents
Method for detecting normal growth of epitaxy single-crystal Download PDFInfo
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- CN101191250B CN101191250B CN2006101185462A CN200610118546A CN101191250B CN 101191250 B CN101191250 B CN 101191250B CN 2006101185462 A CN2006101185462 A CN 2006101185462A CN 200610118546 A CN200610118546 A CN 200610118546A CN 101191250 B CN101191250 B CN 101191250B
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Abstract
The invention discloses a method for detecting normal growth of epitaxial monocrystal, by which the growth of the epitaxial monocrystal can be easily and quickly detected without damaging products. The invention includes the following procedures that: (1) the reflectivity range of the detecting silicon slice is set; (2) the reflectivity of the silicon slice of the grown epitaxial monocrystal is detected; (3) the detected reflectivity is compared with the set reflectivity, if the detected reflectivity is within the set reflectivity range, the epitaxial monocrystal normally grows; otherwise the epitaxial monocrystal abnormally grows.
Description
Technical field
The present invention relates to a kind of method that detects normal growth of epitaxy single-crystal.
Background technology
In the technology that existing epitaxy single-crystal is grown up, distinguish and whether grown monocrystalline, but used four probe method that this method need be pricked probe the surface of product, causes generation of defects easily by surveying square resistance existing the survey in the square resistance technology.In addition, also have the mode by measuring silicon wafer thickness to detect, but because thickness itself is just very little, be difficult for detecting, and detect inaccurately, technology is complexity comparatively.
So just need find a kind of monocrystalline of can monitoring fast to grow up and can not damage the method for the simple and fast of product again.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method that detects normal growth of epitaxy single-crystal, and it can realize detecting quickly and easily the growth situation of epitaxy single-crystal under the situation that does not damage product.
In order to solve above technical problem, the invention provides a kind of method that detects normal growth of epitaxy single-crystal, it is characterized in that it comprises the steps: the first step, set the reflectivity range of silicon chip to be detected; Second step, the reflectivity of the silicon chip after the detection epitaxy single-crystal is grown up; In the 3rd step, the reflectivity that detection is obtained and the reflectivity of setting compare, if detect the reflectivity that obtains in the reflectivity range of setting, represent that then epitaxy single-crystal normally grows up, and do not grow up otherwise expression is normal.
Because the present invention adopts the method for utilizing the reflectivity of measuring silicon chip and comparing reflectivity to distinguish whether the epitaxy single-crystal of silicon chip grows up, do not need directly to touch silicon chip, so can avoid damageeing silicon chip, in addition because the mensuration reflectivity is fast, there is not too much calculating, so can finish detection fast.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Fig. 1 is a testing process synoptic diagram of the present invention.
Embodiment
Because silicon chip carries out laser cutting after by pulling of crystals and cmp forms, the more epitaxially grown surface irregularity of surface meeting, in the extension deposition process, the atomic collision that gas reaction produces to silicon chip surface and mobile until in position with the atomic linkage of silicon chip surface, as long as in suitable process conditions is under certain deposition rate and the certain temperature distribution, epitaxial film has identical crystallization mode with substrate, if can make the surface more smooth again, the reflectivity of epitaxy single-crystal will be higher slightly than the mating plate of silicon chip so, so just can utilize the difference of measuring reflectivity whether to find normally epitaxy single-crystal, if it is also low to survey the reflectivity of the normal mating plate of luminance factor, the unusual epitaxy single-crystal of product then.
What we adopted is the twin-beam thickness tester, it adopts spectroscope a branch of visible light to be divided into the two-beam of same phase, a branch of light incides silicon chip surface, reflection by silicon chip surface, received by phototube, and the light of another bundle is directly received by phototube without the reflection of silicon chip surface, and the ratios of the light intensity of the received light of two bundles are the reflectivity of silicon chip surface.
In real data is gathered, utilize the twin-beam thickness tester, the spectrum of 370 nano wave lengths is measured, and epitaxy single-crystal and pure silicon sheet luminance factor are, and be as shown in table 1.
Table 1
| Product | Mating plate | Normal epitaxy single-crystal sheet 1 | Normal epitaxy single-crystal sheet 2 | Normal epitaxy single-crystal sheet 3 | Unusual epitaxy single-crystal 1 | Unusual epitaxy single-crystal 2 | Unusual epitaxy single-crystal 3 |
| Reflectivity | 56.54％ | 57.36％ | 57.24％ | 57.42％ | 53.89％ | 54.71％ | 54.50％ |
Our the note abnormalities luminance factor pure silicon sheet of epitaxy single-crystal sheet is low from table 1, and the emissivity of normal epitaxy single-crystal sheet is than pure mating plate height, and more stable, so can be used to the method as the monitoring epitaxy single-crystal.
As shown in Figure 1, it is a testing process synoptic diagram of the present invention.It comprises the steps:
If step 105 just in time in the sensing range of setting, then normally flow in the next technology.
By above-mentioned detection, not only can in time find underproof product, and not injure product, realize detecting quickly requirement, and then improved the efficient of producing.
Claims (4)
1. a method that detects normal growth of epitaxy single-crystal is characterized in that, adopts the twin-beam thickness tester, comprises the steps:
The first step according to the reflectivity range of normal epitaxy single-crystal sheet, is set the reflectivity range of silicon chip to be detected;
Second step, the reflectivity of the silicon chip after the detection epitaxy single-crystal is grown up;
In the 3rd step, the reflectivity that detection is obtained and the reflectivity of setting compare, if detect the reflectivity that obtains in the reflectivity range of setting, represent that then epitaxy single-crystal normally grows up, and do not grow up otherwise expression is normal.
2. the method for detection normal growth of epitaxy single-crystal as claimed in claim 1, it is characterized in that, the method of described detection silicon chip reflectivity is to adopt spectroscope a branch of visible light to be divided into the two-beam of same phase, a branch of light incides silicon chip surface, reflection by silicon chip surface, received by phototube, and the light of another bundle is directly received by phototube without the reflection of silicon chip surface, the ratios of the light intensity of the received light of two bundles are the reflectivity of silicon chip surface.
3. the method for detection normal growth of epitaxy single-crystal as claimed in claim 2 is characterized in that, the light beam wavelength that is adopted is 370 nanometers.
4. the method for detection normal growth of epitaxy single-crystal as claimed in claim 1 is characterized in that, it also comprised for the 4th step, if detected reflectivity sends alarm message not in the reflectivity range of setting.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2006101185462A CN101191250B (en) | 2006-11-21 | 2006-11-21 | Method for detecting normal growth of epitaxy single-crystal |
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| CN2006101185462A CN101191250B (en) | 2006-11-21 | 2006-11-21 | Method for detecting normal growth of epitaxy single-crystal |
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| CN101191250A CN101191250A (en) | 2008-06-04 |
| CN101191250B true CN101191250B (en) | 2010-09-08 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998045507A1 (en) * | 1997-04-09 | 1998-10-15 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| CN1514475A (en) * | 2002-12-31 | 2004-07-21 | 上海贝岭股份有限公司 | Detecting method of silicon material quality in dielectrode integrated circuit |
| CN1523343A (en) * | 2003-02-20 | 2004-08-25 | 上海市计量测试技术研究院 | Process for detecting heavily doped silicon monocrystal chip or ingot lattice imperfection |
| CN1740782A (en) * | 2005-09-15 | 2006-03-01 | 中国科学院上海光学精密机械研究所 | Tilt incident light scattering silicon wafer surface defect testing instrument |
-
2006
- 2006-11-21 CN CN2006101185462A patent/CN101191250B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1998045507A1 (en) * | 1997-04-09 | 1998-10-15 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| CN1514475A (en) * | 2002-12-31 | 2004-07-21 | 上海贝岭股份有限公司 | Detecting method of silicon material quality in dielectrode integrated circuit |
| CN1523343A (en) * | 2003-02-20 | 2004-08-25 | 上海市计量测试技术研究院 | Process for detecting heavily doped silicon monocrystal chip or ingot lattice imperfection |
| CN1740782A (en) * | 2005-09-15 | 2006-03-01 | 中国科学院上海光学精密机械研究所 | Tilt incident light scattering silicon wafer surface defect testing instrument |
Non-Patent Citations (2)
| Title |
|---|
| 李增发等.用魔镜方法检测硅片的生长管道和星形结构.《光电子、激光》.1998,第9卷(第6期),482-483. * |
| 邓江东等."魔镜"方法与晶体缺陷的检测.《物理》.1994,第23卷(第9期),556-561. * |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140109 |
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Effective date of registration: 20140109 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |