KR100823648B1 - 반도체장치의 제조 방법 - Google Patents

반도체장치의 제조 방법 Download PDF

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KR100823648B1
KR100823648B1 KR1020070005893A KR20070005893A KR100823648B1 KR 100823648 B1 KR100823648 B1 KR 100823648B1 KR 1020070005893 A KR1020070005893 A KR 1020070005893A KR 20070005893 A KR20070005893 A KR 20070005893A KR 100823648 B1 KR100823648 B1 KR 100823648B1
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metal layer
semiconductor wafer
heat treatment
forming
manufacturing
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KR20070077450A (ko
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타미오 마쓰무라
타다시 쯔지노
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미쓰비시덴키 가부시키가이샤
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020070005893A 2006-01-23 2007-01-19 반도체장치의 제조 방법 Active KR100823648B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00013349 2006-01-23
JP2006013349A JP2007194514A (ja) 2006-01-23 2006-01-23 半導体装置の製造方法

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KR20070077450A KR20070077450A (ko) 2007-07-26
KR100823648B1 true KR100823648B1 (ko) 2008-04-21

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US (1) US8183144B2 (enExample)
JP (1) JP2007194514A (enExample)
KR (1) KR100823648B1 (enExample)
CN (1) CN100524632C (enExample)
AT (1) AT503190B1 (enExample)
DE (1) DE102006062029B4 (enExample)
TW (1) TW200737382A (enExample)

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JP4221012B2 (ja) * 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
WO2009141740A2 (en) * 2008-05-23 2009-11-26 Florian Bieck Semiconductor wafer and method for producing the same
JP2010021171A (ja) * 2008-07-08 2010-01-28 Renesas Technology Corp 半導体装置の製造方法およびそれに用いる半導体製造装置
WO2010109572A1 (ja) 2009-03-23 2010-09-30 トヨタ自動車株式会社 半導体装置
JP5545000B2 (ja) * 2010-04-14 2014-07-09 富士電機株式会社 半導体装置の製造方法
JP2012248572A (ja) * 2011-05-25 2012-12-13 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法
EP2733746B1 (en) * 2011-09-08 2019-05-22 Fuji Electric Co., Ltd. Method for manufacturing a semiconductor device
JP6289104B2 (ja) * 2014-01-08 2018-03-07 日東電工株式会社 フィルム状接着剤、フィルム状接着剤付きダイシングテープ、半導体装置の製造方法、及び半導体装置
DE112016005136T5 (de) * 2015-11-09 2018-07-26 Applied Materials, Inc. Unterseitenverarbeitung
JP2023073724A (ja) * 2021-11-16 2023-05-26 株式会社フルヤ金属 半導体デバイス及びそれに用いる酸化防止用金属材料並びに該金属材料のスパッタリングターゲット及び蒸着源

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KR930017092A (ko) * 1992-01-15 1993-08-30 김광호 반도체장치 및 그 제조방법
KR960026252A (ko) * 1994-12-22 1996-07-22 이데이 노부유키 오믹전극을 가지는 반도체장치와 제법
KR20000039690A (ko) * 1998-12-15 2000-07-05 김영환 반도체장치의 배리어층 형성방법
KR20020061752A (ko) * 2001-01-17 2002-07-25 주식회사 하이닉스반도체 반도체장치의 배리어층 형성방법
JP2003282845A (ja) * 2002-03-20 2003-10-03 Mitsubishi Electric Corp 炭化ケイ素基板の製造方法およびその製造方法により製造された炭化ケイ素基板、ならびに、ショットキーバリアダイオードおよび炭化ケイ素薄膜の製造方法
KR20030091659A (ko) * 2002-05-22 2003-12-03 미쓰비시덴키 가부시키가이샤 반도체장치 및 그 제조방법
KR20040021761A (ko) * 2002-09-04 2004-03-11 한국전기연구원 금속 게이트 전극을 갖는 탄화규소 모스펫 소자 및 그제조방법
KR20050059259A (ko) * 2002-10-30 2005-06-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 반도체장치의 제작방법
JP2004153081A (ja) * 2002-10-31 2004-05-27 Shin Etsu Handotai Co Ltd Ｓｏｉウエーハ及びｓｏｉウエーハの製造方法
JP2005150297A (ja) * 2003-11-13 2005-06-09 Seiko Epson Corp 電気光学装置用基板の製造方法、電気光学装置用基板、電気光学装置、電子機器

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US20070173045A1 (en) 2007-07-26
CN100524632C (zh) 2009-08-05
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AT503190A2 (de) 2007-08-15
AT503190B1 (de) 2010-03-15
AT503190A3 (de) 2008-05-15
TW200737382A (en) 2007-10-01
KR20070077450A (ko) 2007-07-26
JP2007194514A (ja) 2007-08-02
CN101009221A (zh) 2007-08-01
US8183144B2 (en) 2012-05-22

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