KR100733751B1 - 반도체 디바이스 및 그 제조 방법 - Google Patents

반도체 디바이스 및 그 제조 방법 Download PDF

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KR100733751B1
KR100733751B1 KR1020060038686A KR20060038686A KR100733751B1 KR 100733751 B1 KR100733751 B1 KR 100733751B1 KR 1020060038686 A KR1020060038686 A KR 1020060038686A KR 20060038686 A KR20060038686 A KR 20060038686A KR 100733751 B1 KR100733751 B1 KR 100733751B1
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South Korea
Prior art keywords
insulating film
conductivity
metal electrode
region
type
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KR1020060038686A
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English (en)
Korean (ko)
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KR20060113531A (ko
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진스케 스도우
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엔이씨 일렉트로닉스 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66136—PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020060038686A 2005-04-28 2006-04-28 반도체 디바이스 및 그 제조 방법 KR100733751B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005131531A JP2006310555A (ja) 2005-04-28 2005-04-28 半導体装置およびその製造方法
JPJP-P-2005-00131531 2005-04-28

Publications (2)

Publication Number Publication Date
KR20060113531A KR20060113531A (ko) 2006-11-02
KR100733751B1 true KR100733751B1 (ko) 2007-06-29

Family

ID=37195530

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060038686A KR100733751B1 (ko) 2005-04-28 2006-04-28 반도체 디바이스 및 그 제조 방법

Country Status (5)

Country Link
US (1) US20060244050A1 (zh)
JP (1) JP2006310555A (zh)
KR (1) KR100733751B1 (zh)
CN (1) CN100576570C (zh)
TW (1) TWI315099B (zh)

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JP4944460B2 (ja) * 2005-03-30 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 半導体装置
JP2008085186A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
JP2008085187A (ja) * 2006-09-28 2008-04-10 Sanyo Electric Co Ltd 半導体装置
US7750426B2 (en) * 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
TW200847448A (en) * 2007-05-30 2008-12-01 Intersil Inc Junction barrier schottky diode
KR101320516B1 (ko) * 2007-07-20 2013-10-22 삼성전자주식회사 정전압 방전 보호 회로를 포함하는 반도체 소자 및 그 제조방법
JP5085241B2 (ja) * 2007-09-06 2012-11-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN101452967B (zh) * 2007-11-30 2010-11-03 上海华虹Nec电子有限公司 肖特基势垒二极管器件及其制作方法
US8338906B2 (en) * 2008-01-30 2012-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Schottky device
US7943472B2 (en) * 2008-01-31 2011-05-17 Texas Instruments Incorporated CoSi2 Schottky diode integration in BiSMOS process
CN101978502B (zh) * 2008-03-17 2012-11-14 三菱电机株式会社 半导体器件
US7781859B2 (en) 2008-03-24 2010-08-24 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky diode structures having deep wells for improving breakdown voltages
JP5255305B2 (ja) * 2008-03-27 2013-08-07 ルネサスエレクトロニクス株式会社 半導体集積回路装置および半導体集積回路装置の製造方法
CN101661960B (zh) * 2008-08-26 2011-05-04 万国半导体股份有限公司 形成设在p型衬底上的肖特基二极管或底部阳极肖特基二极管的结构与方法
JP2011035144A (ja) * 2009-07-31 2011-02-17 Sanyo Electric Co Ltd ダイオードおよびその製造方法
KR101097984B1 (ko) * 2010-03-26 2011-12-23 매그나칩 반도체 유한회사 샤키 다이오드 및 그 제조방법
US8193602B2 (en) 2010-04-20 2012-06-05 Texas Instruments Incorporated Schottky diode with control gate for optimization of the on state resistance, the reverse leakage, and the reverse breakdown
US8421181B2 (en) 2010-07-21 2013-04-16 International Business Machines Corporation Schottky barrier diode with perimeter capacitance well junction
US8519478B2 (en) 2011-02-02 2013-08-27 International Business Machines Corporation Schottky barrier diode, a method of forming the diode and a design structure for the diode
US8729599B2 (en) * 2011-08-22 2014-05-20 United Microelectronics Corp. Semiconductor device
US8368167B1 (en) * 2011-09-30 2013-02-05 Chengdu Monolithic Power Systems, Inc. Schottky diode with extended forward current capability
CN103390554A (zh) * 2012-05-11 2013-11-13 上海华虹Nec电子有限公司 改善肖特基二极管击穿电压均一性的方法
US8860168B2 (en) * 2012-09-04 2014-10-14 Taiwan Semiconductor Manufacturing Company, Ltd. Schottky isolated NMOS for latch-up prevention
JP5492959B2 (ja) * 2012-09-05 2014-05-14 ルネサスエレクトロニクス株式会社 半導体装置
CN103730353B (zh) * 2012-10-10 2016-11-02 上海华虹宏力半导体制造有限公司 钴肖特基二极管的制备方法
JP2013153170A (ja) * 2013-02-12 2013-08-08 Renesas Electronics Corp 半導体装置
JP6296535B2 (ja) * 2013-12-09 2018-03-20 ローム株式会社 ダイオードおよびそれを含む信号出力回路
CN104900718B (zh) * 2014-03-05 2018-04-17 中芯国际集成电路制造(上海)有限公司 一种肖特基二极管及其制造方法
KR102424762B1 (ko) * 2016-09-23 2022-07-25 주식회사 디비하이텍 쇼트키 배리어 다이오드 및 그 제조 방법
CN109148606B (zh) * 2017-06-28 2022-04-12 联华电子股份有限公司 高压元件
TW202236589A (zh) * 2021-01-14 2022-09-16 美商德州儀器公司 用於在二極體中控制傳導性調變的積體防護結構

Citations (3)

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US5163179A (en) 1991-07-18 1992-11-10 The United States Of America As Represented By The Secretary Of The Air Force Platinum silicide infrared diode
KR920020603A (ko) * 1991-04-13 1992-11-21 문정환 씨모스 소자 제조 방법
KR20000061059A (ko) * 1999-03-23 2000-10-16 윤종용 매몰층을 갖는 쇼트키 다이오드 및 그 제조방법

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JPS60201666A (ja) * 1984-03-27 1985-10-12 Nec Corp 半導体装置
US5064773A (en) * 1988-12-27 1991-11-12 Raytheon Company Method of forming bipolar transistor having closely spaced device regions
US5109256A (en) * 1990-08-17 1992-04-28 National Semiconductor Corporation Schottky barrier diodes and Schottky barrier diode-clamped transistors and method of fabrication
US5614755A (en) * 1993-04-30 1997-03-25 Texas Instruments Incorporated High voltage Shottky diode
US6784489B1 (en) * 1997-03-28 2004-08-31 Stmicroelectronics, Inc. Method of operating a vertical DMOS transistor with schottky diode body structure
US6683362B1 (en) * 1999-08-24 2004-01-27 Kenneth K. O Metal-semiconductor diode clamped complementary field effect transistor integrated circuits
US20060065891A1 (en) * 2004-09-30 2006-03-30 Mccormack Steve Zener zap diode structure compatible with tungsten plug technology
EP1691407B1 (en) * 2005-02-11 2009-07-22 EM Microelectronic-Marin SA Integrated circuit having a Schottky diode with a self-aligned floating guard ring and method for fabricating such a diode

Patent Citations (3)

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KR920020603A (ko) * 1991-04-13 1992-11-21 문정환 씨모스 소자 제조 방법
US5163179A (en) 1991-07-18 1992-11-10 The United States Of America As Represented By The Secretary Of The Air Force Platinum silicide infrared diode
KR20000061059A (ko) * 1999-03-23 2000-10-16 윤종용 매몰층을 갖는 쇼트키 다이오드 및 그 제조방법

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Also Published As

Publication number Publication date
US20060244050A1 (en) 2006-11-02
TWI315099B (en) 2009-09-21
CN100576570C (zh) 2009-12-30
JP2006310555A (ja) 2006-11-09
CN1855551A (zh) 2006-11-01
TW200707728A (en) 2007-02-16
KR20060113531A (ko) 2006-11-02

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