KR920020603A - 씨모스 소자 제조 방법 - Google Patents
씨모스 소자 제조 방법 Download PDFInfo
- Publication number
- KR920020603A KR920020603A KR1019910005957A KR910005957A KR920020603A KR 920020603 A KR920020603 A KR 920020603A KR 1019910005957 A KR1019910005957 A KR 1019910005957A KR 910005957 A KR910005957 A KR 910005957A KR 920020603 A KR920020603 A KR 920020603A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- oxide film
- device manufacturing
- etching
- gate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000005530 etching Methods 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 공정 단면도.
Claims (1)
- 기판(1)에 앤웰(2)을 형성하고 필드산화막(3)과 게이트(4)를 형성하는 공정과, 산화막(5)을 형성하고 마스크(6)를 사용하여 피모스 부분에 보론을 주입하는 공정과, 상기 산화막(5)을 게이트(4) 부분에만 남도록 식각하는 공정과, 마스크(7)를 사용하여 피모스 부분의 기판이 P+영역 아래까지 드러나게 식각하는 공정과, 상기 게이트(4)에 콘택을 형성하고 액티브 영역에만 플라타늄(8)을 형성하는 공정과, LTO(9)를 형성한 후 패터닝하고 메탈(10)을 증착하는 공정을 차례로 실시하여서 이루어짐을 특징으로 하는 씨모스 소자 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910005957A KR100192473B1 (ko) | 1991-04-13 | 1991-04-13 | 씨모스 소자 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910005957A KR100192473B1 (ko) | 1991-04-13 | 1991-04-13 | 씨모스 소자 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920020603A true KR920020603A (ko) | 1992-11-21 |
| KR100192473B1 KR100192473B1 (ko) | 1999-06-15 |
Family
ID=19313250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910005957A KR100192473B1 (ko) | 1991-04-13 | 1991-04-13 | 씨모스 소자 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100192473B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100733751B1 (ko) * | 2005-04-28 | 2007-06-29 | 엔이씨 일렉트로닉스 가부시키가이샤 | 반도체 디바이스 및 그 제조 방법 |
-
1991
- 1991-04-13 KR KR1019910005957A patent/KR100192473B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100733751B1 (ko) * | 2005-04-28 | 2007-06-29 | 엔이씨 일렉트로닉스 가부시키가이샤 | 반도체 디바이스 및 그 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100192473B1 (ko) | 1999-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20041230 Year of fee payment: 7 |
|
| LAPS | Lapse due to unpaid annual fee |