KR100708237B1 - 진공 프로세서내의 유전 가공품의 정전 디척킹 방법 및 장치 - Google Patents

진공 프로세서내의 유전 가공품의 정전 디척킹 방법 및 장치 Download PDF

Info

Publication number
KR100708237B1
KR100708237B1 KR1020017004017A KR20017004017A KR100708237B1 KR 100708237 B1 KR100708237 B1 KR 100708237B1 KR 1020017004017 A KR1020017004017 A KR 1020017004017A KR 20017004017 A KR20017004017 A KR 20017004017A KR 100708237 B1 KR100708237 B1 KR 100708237B1
Authority
KR
South Korea
Prior art keywords
workpiece
chuck
plasma
voltage
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020017004017A
Other languages
English (en)
Korean (ko)
Other versions
KR20010083878A (ko
Inventor
아써 엠. 하월드
존 피. 홀랜드
Original Assignee
램 리써치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리써치 코포레이션 filed Critical 램 리써치 코포레이션
Publication of KR20010083878A publication Critical patent/KR20010083878A/ko
Application granted granted Critical
Publication of KR100708237B1 publication Critical patent/KR100708237B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T279/00—Chucks or sockets
    • Y10T279/23—Chucks or sockets with magnetic or electrostatic means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
KR1020017004017A 1998-09-30 1999-09-10 진공 프로세서내의 유전 가공품의 정전 디척킹 방법 및 장치 Expired - Lifetime KR100708237B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/163,370 US6125025A (en) 1998-09-30 1998-09-30 Electrostatic dechucking method and apparatus for dielectric workpieces in vacuum processors
US09/163,370 1998-09-30

Publications (2)

Publication Number Publication Date
KR20010083878A KR20010083878A (ko) 2001-09-03
KR100708237B1 true KR100708237B1 (ko) 2007-04-16

Family

ID=22589749

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017004017A Expired - Lifetime KR100708237B1 (ko) 1998-09-30 1999-09-10 진공 프로세서내의 유전 가공품의 정전 디척킹 방법 및 장치

Country Status (6)

Country Link
US (1) US6125025A (enExample)
JP (4) JP4698025B2 (enExample)
KR (1) KR100708237B1 (enExample)
AU (1) AU5913699A (enExample)
TW (1) TW426930B (enExample)
WO (1) WO2000019519A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009078949A3 (en) * 2007-12-13 2009-10-01 Lam Research Corporation Method for using an rc circuit to model trapped charge in an electrostatic chuck

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790375B1 (en) * 1998-09-30 2004-09-14 Lam Research Corporation Dechucking method and apparatus for workpieces in vacuum processors
US7218503B2 (en) * 1998-09-30 2007-05-15 Lam Research Corporation Method of determining the correct average bias compensation voltage during a plasma process
US6965506B2 (en) * 1998-09-30 2005-11-15 Lam Research Corporation System and method for dechucking a workpiece from an electrostatic chuck
JP4135236B2 (ja) * 1998-11-19 2008-08-20 ソニー株式会社 Ｃｖｄ膜の成膜方法
KR20010007406A (ko) 1999-06-17 2001-01-26 조셉 제이. 스위니 정전 처크에 의해 발생한 정전력 균형을 맞추는 방법 및장치
US6319102B1 (en) * 1999-07-09 2001-11-20 International Business Machines Corporation Capacitor coupled chuck for carbon dioxide snow cleaning system
US6307728B1 (en) * 2000-01-21 2001-10-23 Applied Materials, Inc. Method and apparatus for dechucking a workpiece from an electrostatic chuck
TWI254403B (en) * 2000-05-19 2006-05-01 Ngk Insulators Ltd Electrostatic clamper, and electrostatic attracting structures
WO2002017384A1 (en) * 2000-08-23 2002-02-28 Applied Materials, Inc. Electrostatic chuck temperature control method and system
WO2002065532A1 (fr) * 2001-02-15 2002-08-22 Tokyo Electron Limited Procede de traitement de piece et dispositif de traitement
US20020126437A1 (en) * 2001-03-12 2002-09-12 Winbond Electronics Corporation Electrostatic chuck system and method for maintaining the same
TWI246873B (en) * 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
JP2003060018A (ja) * 2001-08-13 2003-02-28 Nissin Electric Co Ltd 基板吸着方法およびその装置
US6898064B1 (en) * 2001-08-29 2005-05-24 Lsi Logic Corporation System and method for optimizing the electrostatic removal of a workpiece from a chuck
US6727655B2 (en) * 2001-10-26 2004-04-27 Mcchesney Jon Method and apparatus to monitor electrical states at a workpiece in a semiconductor processing chamber
FR2836595B1 (fr) * 2002-02-27 2005-04-08 Semco Engineering Sa Systeme de repartition homogene de la temperature a la surface d'une semelle sur laquelle est dispose un element
JP4106948B2 (ja) * 2002-03-29 2008-06-25 東京エレクトロン株式会社 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US20030210510A1 (en) * 2002-05-07 2003-11-13 Hann Thomas C. Dynamic dechucking
TWI275913B (en) * 2003-02-12 2007-03-11 Asml Netherlands Bv Lithographic apparatus and method to detect correct clamping of an object
US20040261946A1 (en) * 2003-04-24 2004-12-30 Tokyo Electron Limited Plasma processing apparatus, focus ring, and susceptor
ATE362648T1 (de) * 2003-08-14 2007-06-15 Fuji Film Mfg Europ B V Anordnung, verfahren und elektrode zur erzeugung eines plasmas
US7628864B2 (en) * 2004-04-28 2009-12-08 Tokyo Electron Limited Substrate cleaning apparatus and method
US7030035B2 (en) * 2004-05-14 2006-04-18 Hitachi Global Storage Technologies Netherlands, B.V. Prevention of electrostatic wafer sticking in plasma deposition/etch tools
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
JP4783213B2 (ja) * 2005-06-09 2011-09-28 日本碍子株式会社 静電チャック
US8034180B2 (en) 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US7988872B2 (en) * 2005-10-11 2011-08-02 Applied Materials, Inc. Method of operating a capacitively coupled plasma reactor with dual temperature control loops
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US8608900B2 (en) * 2005-10-20 2013-12-17 B/E Aerospace, Inc. Plasma reactor with feed forward thermal control system using a thermal model for accommodating RF power changes or wafer temperature changes
CN100416758C (zh) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法
US20070211402A1 (en) * 2006-03-08 2007-09-13 Tokyo Electron Limited Substrate processing apparatus, substrate attracting method, and storage medium
US7813103B2 (en) * 2007-10-11 2010-10-12 Applied Materials, Inc. Time-based wafer de-chucking from an electrostatic chuck having separate RF BIAS and DC chucking electrodes
TWI475594B (zh) 2008-05-19 2015-03-01 Entegris Inc 靜電夾頭
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
SG176059A1 (en) 2009-05-15 2011-12-29 Entegris Inc Electrostatic chuck with polymer protrusions
US8861170B2 (en) 2009-05-15 2014-10-14 Entegris, Inc. Electrostatic chuck with photo-patternable soft protrusion contact surface
US9338871B2 (en) 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8916793B2 (en) * 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US8462480B2 (en) * 2010-05-26 2013-06-11 Illinois Tool Works Inc. In-line gas ionizer with static dissipative material and counterelectrode
US8880227B2 (en) 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
WO2011149918A2 (en) 2010-05-28 2011-12-01 Entegris, Inc. High surface resistivity electrostatic chuck
US8608852B2 (en) 2010-06-11 2013-12-17 Applied Materials, Inc. Temperature controlled plasma processing chamber component with zone dependent thermal efficiencies
TWI493620B (zh) * 2010-06-29 2015-07-21 Global Unichip Corp 調整導線蝕刻機內的靜電吸盤電壓以釋放累積電荷
US8580693B2 (en) * 2010-08-27 2013-11-12 Applied Materials, Inc. Temperature enhanced electrostatic chucking in plasma processing apparatus
US8832916B2 (en) * 2011-07-12 2014-09-16 Lam Research Corporation Methods of dechucking and system thereof
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
TW201327712A (zh) * 2011-11-01 2013-07-01 因特瓦克公司 以電漿處理太陽能電池晶圓之系統架構
JP5794905B2 (ja) * 2011-12-07 2015-10-14 株式会社アルバック リフロー法及び半導体装置の製造方法
JP6013740B2 (ja) * 2012-02-03 2016-10-25 東京エレクトロン株式会社 離脱制御方法及びプラズマ処理装置の制御装置
US20130240144A1 (en) * 2012-03-13 2013-09-19 Applied Materials, Inc. Fast response fluid temperature control system
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
JP5946365B2 (ja) * 2012-08-22 2016-07-06 株式会社アルバック 静電吸着装置、残留吸着除去方法
DE102012109073A1 (de) * 2012-09-26 2014-03-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Betrieb einer Greifvorrichtung sowie elektrostatische Greifvorrichtung
CN103840877B (zh) 2012-11-23 2017-11-24 中兴通讯股份有限公司 自动检测光纤非对称性的时间同步装置及方法
US10324121B2 (en) * 2012-12-28 2019-06-18 Axcelis Technologies, Inc. Charge integration based electrostatic clamp health monitor
US9633885B2 (en) * 2014-02-12 2017-04-25 Axcelis Technologies, Inc. Variable electrode pattern for versatile electrostatic clamp operation
CN103972013B (zh) * 2014-05-14 2016-08-24 京东方科技集团股份有限公司 一种真空设备
US10546768B2 (en) 2015-02-25 2020-01-28 Corning Incorporated Apparatus and method to electrostatically chuck substrates to a moving carrier
JP6505027B2 (ja) * 2016-01-04 2019-04-24 株式会社日立ハイテクノロジーズ 試料の離脱方法およびプラズマ処理装置
KR101765091B1 (ko) * 2016-07-01 2017-08-07 세메스 주식회사 기판 처리 장치 및 방법
US10923379B2 (en) * 2017-02-15 2021-02-16 Lam Research Corporation Methods for controlling clamping of insulator-type substrate on electrostatic-type substrate support structure
US10510575B2 (en) 2017-09-20 2019-12-17 Applied Materials, Inc. Substrate support with multiple embedded electrodes
US11241720B2 (en) 2018-03-22 2022-02-08 Tel Manufacturing And Engineering Of America, Inc. Pressure control strategies to provide uniform treatment streams in the manufacture of microelectronic devices
US10555412B2 (en) 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP2019201125A (ja) * 2018-05-17 2019-11-21 三菱電機株式会社 ウエハ研削装置およびウエハ研削方法
US11476145B2 (en) * 2018-11-20 2022-10-18 Applied Materials, Inc. Automatic ESC bias compensation when using pulsed DC bias
WO2020154310A1 (en) 2019-01-22 2020-07-30 Applied Materials, Inc. Feedback loop for controlling a pulsed voltage waveform
US11508554B2 (en) 2019-01-24 2022-11-22 Applied Materials, Inc. High voltage filter assembly
WO2020163073A1 (en) * 2019-02-06 2020-08-13 Applied Materials, Inc. Method and tool for electrostatic chucking
JP7341043B2 (ja) * 2019-12-06 2023-09-08 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11848176B2 (en) 2020-07-31 2023-12-19 Applied Materials, Inc. Plasma processing using pulsed-voltage and radio-frequency power
JP7489865B2 (ja) * 2020-08-24 2024-05-24 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US11901157B2 (en) 2020-11-16 2024-02-13 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11798790B2 (en) 2020-11-16 2023-10-24 Applied Materials, Inc. Apparatus and methods for controlling ion energy distribution
US11495470B1 (en) 2021-04-16 2022-11-08 Applied Materials, Inc. Method of enhancing etching selectivity using a pulsed plasma
US11948780B2 (en) 2021-05-12 2024-04-02 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11791138B2 (en) 2021-05-12 2023-10-17 Applied Materials, Inc. Automatic electrostatic chuck bias compensation during plasma processing
US11967483B2 (en) 2021-06-02 2024-04-23 Applied Materials, Inc. Plasma excitation with ion energy control
US20220399185A1 (en) 2021-06-09 2022-12-15 Applied Materials, Inc. Plasma chamber and chamber component cleaning methods
US12148595B2 (en) 2021-06-09 2024-11-19 Applied Materials, Inc. Plasma uniformity control in pulsed DC plasma chamber
US11810760B2 (en) 2021-06-16 2023-11-07 Applied Materials, Inc. Apparatus and method of ion current compensation
US11569066B2 (en) 2021-06-23 2023-01-31 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US11776788B2 (en) 2021-06-28 2023-10-03 Applied Materials, Inc. Pulsed voltage boost for substrate processing
US11476090B1 (en) 2021-08-24 2022-10-18 Applied Materials, Inc. Voltage pulse time-domain multiplexing
JP7652489B2 (ja) * 2021-09-09 2025-03-27 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US12106938B2 (en) 2021-09-14 2024-10-01 Applied Materials, Inc. Distortion current mitigation in a radio frequency plasma processing chamber
US11694876B2 (en) 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
KR102732041B1 (ko) * 2022-02-08 2024-11-19 (주)아이씨디 정전 장치 및 그 동작 방법
US11972924B2 (en) 2022-06-08 2024-04-30 Applied Materials, Inc. Pulsed voltage source for plasma processing applications
US12315732B2 (en) 2022-06-10 2025-05-27 Applied Materials, Inc. Method and apparatus for etching a semiconductor substrate in a plasma etch chamber
US12272524B2 (en) 2022-09-19 2025-04-08 Applied Materials, Inc. Wideband variable impedance load for high volume manufacturing qualification and on-site diagnostics
US12111341B2 (en) 2022-10-05 2024-10-08 Applied Materials, Inc. In-situ electric field detection method and apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950034406A (ko) * 1994-04-28 1995-12-28 제임스 조셉 드롱 정전 척 및 웨이퍼 사이의 전류 정전기력을 제거하는 디척킹 전압 결정 방법
JPH101998A (ja) * 1996-06-17 1998-01-06 Matsushita Electric Ind Co Ltd 衛生洗浄装置
JPH101995A (ja) * 1996-07-04 1998-01-06 Nippon Soda Co Ltd トイレ排水管のスケール防止方法
KR19980014133A (ko) * 1996-08-08 1998-05-15 문정환 유니포울러 정전척

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2506219B2 (ja) * 1990-06-19 1996-06-12 富士通株式会社 静電吸着方法
JPH06103683B2 (ja) * 1990-08-07 1994-12-14 株式会社東芝 静電吸着方法
JPH04100256A (ja) * 1990-08-20 1992-04-02 Fujitsu Ltd 静電吸着機構を備えた処理装置および被吸着体の離脱方法
JPH04225516A (ja) * 1990-12-27 1992-08-14 Fujitsu Ltd 光気相成長方法
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
JPH0513556A (ja) * 1991-07-01 1993-01-22 Toshiba Corp 静電チヤツク
JPH05291384A (ja) * 1992-04-13 1993-11-05 Fujitsu Ltd 静電吸着方法
US5444597A (en) * 1993-01-15 1995-08-22 Blake; Julian G. Wafer release method and apparatus
US5557215A (en) * 1993-05-12 1996-09-17 Tokyo Electron Limited Self-bias measuring method, apparatus thereof and electrostatic chucking apparatus
JPH0774231A (ja) * 1993-08-31 1995-03-17 Tokyo Electron Ltd 処理装置及びその使用方法
JP3257180B2 (ja) * 1993-09-21 2002-02-18 ソニー株式会社 成膜方法
JP2626539B2 (ja) * 1993-12-15 1997-07-02 日本電気株式会社 静電吸着装置
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
JPH07211768A (ja) * 1994-01-13 1995-08-11 Hitachi Ltd 静電吸着装置の保持状態確認方法
TW288253B (enExample) * 1994-02-03 1996-10-11 Aneruba Kk
US5459632A (en) * 1994-03-07 1995-10-17 Applied Materials, Inc. Releasing a workpiece from an electrostatic chuck
TW293231B (enExample) * 1994-04-27 1996-12-11 Aneruba Kk
US5507874A (en) * 1994-06-03 1996-04-16 Applied Materials, Inc. Method of cleaning of an electrostatic chuck in plasma reactors
US5474614A (en) * 1994-06-10 1995-12-12 Texas Instruments Incorporated Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp
JPH08250579A (ja) * 1995-03-14 1996-09-27 Mitsubishi Electric Corp 半導体製造装置の静電チャック用電源および半導体製造装置
JPH08274150A (ja) * 1995-03-31 1996-10-18 Nec Corp 静電吸着ステージ
JPH08316297A (ja) * 1995-05-24 1996-11-29 Sony Corp 静電チャック及びその制御方法
US5708556A (en) * 1995-07-10 1998-01-13 Watkins Johnson Company Electrostatic chuck assembly
JPH0982787A (ja) * 1995-09-19 1997-03-28 Toshiba Corp プラズマ処理装置およびプラズマ処理方法
US5847918A (en) * 1995-09-29 1998-12-08 Lam Research Corporation Electrostatic clamping method and apparatus for dielectric workpieces in vacuum processors
JP3320605B2 (ja) * 1996-01-29 2002-09-03 東京エレクトロン株式会社 プラズマ処理装置
JPH09219441A (ja) * 1996-02-08 1997-08-19 Fujitsu Ltd 静電チャックからの被処理基板離脱方法及び製造装置
JPH09298192A (ja) * 1996-03-04 1997-11-18 Sony Corp 半導体装置の製造装置および静電チャックからのウエハ脱着方法
JP3163973B2 (ja) * 1996-03-26 2001-05-08 日本電気株式会社 半導体ウエハ・チャック装置及び半導体ウエハの剥離方法
US5708250A (en) * 1996-03-29 1998-01-13 Lam Resarch Corporation Voltage controller for electrostatic chuck of vacuum plasma processors
US5764471A (en) * 1996-05-08 1998-06-09 Applied Materials, Inc. Method and apparatus for balancing an electrostatic force produced by an electrostatic chuck
US5793192A (en) * 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
US5818682A (en) * 1996-08-13 1998-10-06 Applied Materials, Inc. Method and apparatus for optimizing a dechucking period used to dechuck a workpiece from an electrostatic chuck
JP3006502B2 (ja) * 1996-08-20 2000-02-07 日本電気株式会社 プラズマ処理装置及びプラズマ処理方法
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3911787B2 (ja) * 1996-09-19 2007-05-09 株式会社日立製作所 試料処理装置及び試料処理方法
US5737177A (en) * 1996-10-17 1998-04-07 Applied Materials, Inc. Apparatus and method for actively controlling the DC potential of a cathode pedestal
JP3245369B2 (ja) * 1996-11-20 2002-01-15 東京エレクトロン株式会社 被処理体を静電チャックから離脱する方法及びプラズマ処理装置
JPH10209258A (ja) * 1997-01-22 1998-08-07 Hitachi Ltd 静電吸着保持方法および装置
JPH10242256A (ja) * 1997-02-26 1998-09-11 Kyocera Corp 静電チャック
US5894400A (en) * 1997-05-29 1999-04-13 Wj Semiconductor Equipment Group, Inc. Method and apparatus for clamping a substrate
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
JPH10163308A (ja) * 1997-11-04 1998-06-19 Hitachi Ltd プラズマ処理方法および装置
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950034406A (ko) * 1994-04-28 1995-12-28 제임스 조셉 드롱 정전 척 및 웨이퍼 사이의 전류 정전기력을 제거하는 디척킹 전압 결정 방법
JPH101998A (ja) * 1996-06-17 1998-01-06 Matsushita Electric Ind Co Ltd 衛生洗浄装置
JPH101995A (ja) * 1996-07-04 1998-01-06 Nippon Soda Co Ltd トイレ排水管のスケール防止方法
KR19980014133A (ko) * 1996-08-08 1998-05-15 문정환 유니포울러 정전척

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
10-1995-0034406
10-1998-0014133

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009078949A3 (en) * 2007-12-13 2009-10-01 Lam Research Corporation Method for using an rc circuit to model trapped charge in an electrostatic chuck
US8055489B2 (en) 2007-12-13 2011-11-08 Lam Research Corporation Method for using an RC circuit to model trapped charge in an electrostatic chuck

Also Published As

Publication number Publication date
WO2000019519A1 (en) 2000-04-06
TW426930B (en) 2001-03-21
US6125025A (en) 2000-09-26
JP4698025B2 (ja) 2011-06-08
JP5135306B2 (ja) 2013-02-06
JP2010050464A (ja) 2010-03-04
JP2002526923A (ja) 2002-08-20
AU5913699A (en) 2000-04-17
WO2000019519B1 (en) 2000-05-25
KR20010083878A (ko) 2001-09-03
JP2010062570A (ja) 2010-03-18
JP2010050463A (ja) 2010-03-04

Similar Documents

Publication Publication Date Title
KR100708237B1 (ko) 진공 프로세서내의 유전 가공품의 정전 디척킹 방법 및 장치
JP4414099B2 (ja) 真空プロセッサのワークピースのチャック解除方法および装置
US6965506B2 (en) System and method for dechucking a workpiece from an electrostatic chuck
JP4106948B2 (ja) 被処理体の跳上り検出装置、被処理体の跳上り検出方法、プラズマ処理装置及びプラズマ処理方法
US7218503B2 (en) Method of determining the correct average bias compensation voltage during a plasma process
US5460684A (en) Stage having electrostatic chuck and plasma processing apparatus using same
US5491603A (en) Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer
JP2002526935A5 (enExample)
US7583492B2 (en) Method of determining the correct average bias compensation voltage during a plasma process
KR100613198B1 (ko) 플라즈마 처리 장치, 포커스 링 및 서셉터
US5946184A (en) Electrostatic chuck, and method of and apparatus for processing sample
JP4219628B2 (ja) プラズマ処理装置および基板載置台
TWI474372B (zh) Plasma processing device
US20080242086A1 (en) Plasma processing method and plasma processing apparatus
US20190304824A1 (en) Plasma processing apparatus and method of transferring workpiece
JPH11330217A (ja) 静電チャックプレート表面からの基板離脱方法
JP4009009B2 (ja) 吸着状態判断方法
JP4416911B2 (ja) 真空処理方法
JPH04162443A (ja) 静電チャック装置
JP2025137172A (ja) 静電チャック用の給電システム及び給電方法
JPH08222555A (ja) 絶縁膜製造装置および製造方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20010329

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20040910

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20051228

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20070110

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20070410

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20070410

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20100331

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20110325

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20120327

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20130325

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20130325

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20140325

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20140325

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20160325

Year of fee payment: 10

PR1001 Payment of annual fee

Payment date: 20160325

Start annual number: 10

End annual number: 10

FPAY Annual fee payment

Payment date: 20170331

Year of fee payment: 11

PR1001 Payment of annual fee

Payment date: 20170331

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20180329

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20180329

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20190327

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20190327

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20200310

Termination category: Expiration of duration