KR100662310B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100662310B1
KR100662310B1 KR1020037008861A KR20037008861A KR100662310B1 KR 100662310 B1 KR100662310 B1 KR 100662310B1 KR 1020037008861 A KR1020037008861 A KR 1020037008861A KR 20037008861 A KR20037008861 A KR 20037008861A KR 100662310 B1 KR100662310 B1 KR 100662310B1
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silicon
gas
film
plasma
oxide film
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KR20030068570A (ko
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다다히로 오미
스가와시게토시
히라야마마사키
시라이야스유키
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다다히로 오미
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    • H10D64/01344—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10P14/6309—
    • H10P14/6319—
    • H10P14/6508—
    • H10P14/6514—
    • H10P14/662—
    • H10P50/642—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10P14/6316—
    • H10P14/69215—
    • H10P14/6927—
    • H10P14/69433—

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020037008861A 2000-12-28 2001-12-27 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100662310B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000402834 2000-12-28
JPJP-P-2000-00402834 2000-12-28
JP2001094245A JP4713752B2 (ja) 2000-12-28 2001-03-28 半導体装置およびその製造方法
JPJP-P-2001-00094245 2001-03-28
PCT/JP2001/011597 WO2002054473A1 (en) 2000-12-28 2001-12-27 Semiconductor device and its manufacturing method

Related Child Applications (1)

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KR1020067011455A Division KR100797432B1 (ko) 2000-12-28 2001-12-27 반도체 장치 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20030068570A KR20030068570A (ko) 2003-08-21
KR100662310B1 true KR100662310B1 (ko) 2006-12-28

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KR1020037008861A Expired - Fee Related KR100662310B1 (ko) 2000-12-28 2001-12-27 반도체 장치 및 그 제조 방법
KR1020067011455A Expired - Fee Related KR100797432B1 (ko) 2000-12-28 2001-12-27 반도체 장치 및 그 제조 방법

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Country Status (10)

Country Link
US (2) US6975018B2 (enExample)
EP (1) EP1347506A4 (enExample)
JP (1) JP4713752B2 (enExample)
KR (2) KR100662310B1 (enExample)
CN (1) CN100352016C (enExample)
AU (1) AU2002217545B2 (enExample)
CA (1) CA2433565C (enExample)
IL (2) IL156619A0 (enExample)
TW (2) TWI249182B (enExample)
WO (1) WO2002054473A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101096909B1 (ko) 2009-12-04 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 형성방법

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1879213B1 (en) * 1999-05-26 2012-03-14 Tokyo Electron Limited Plasma processing apparatus
JP4713752B2 (ja) * 2000-12-28 2011-06-29 財団法人国際科学振興財団 半導体装置およびその製造方法
JP4048048B2 (ja) * 2001-12-18 2008-02-13 東京エレクトロン株式会社 基板処理方法
US7517751B2 (en) 2001-12-18 2009-04-14 Tokyo Electron Limited Substrate treating method
JP4164324B2 (ja) * 2002-09-19 2008-10-15 スパンション エルエルシー 半導体装置の製造方法
JP4320167B2 (ja) 2002-12-12 2009-08-26 忠弘 大見 半導体素子及びシリコン酸化窒化膜の製造方法
JP2004265916A (ja) * 2003-02-06 2004-09-24 Tokyo Electron Ltd 基板のプラズマ酸化処理方法
JP4402044B2 (ja) 2003-02-06 2010-01-20 東京エレクトロン株式会社 プラズマ処理方法
JP2004319907A (ja) * 2003-04-18 2004-11-11 Tadahiro Omi 半導体装置の製造方法および製造装置
JP5014566B2 (ja) * 2003-06-04 2012-08-29 国立大学法人東北大学 半導体装置およびその製造方法
JP4723797B2 (ja) 2003-06-13 2011-07-13 財団法人国際科学振興財団 Ｃｍｏｓトランジスタ
JP2005005620A (ja) * 2003-06-13 2005-01-06 Toyota Industries Corp スイッチトキャパシタ回路及びその半導体集積回路
US7887385B2 (en) * 2004-09-24 2011-02-15 Canon Kabushiki Kaisha Organic EL light emitting element, manufacturing method thereof, and display device
US6992370B1 (en) * 2003-09-04 2006-01-31 Advanced Micro Devices, Inc. Memory cell structure having nitride layer with reduced charge loss and method for fabricating same
CN100485885C (zh) * 2003-12-18 2009-05-06 东京毅力科创株式会社 成膜方法
US7161833B2 (en) * 2004-02-06 2007-01-09 Sandisk Corporation Self-boosting system for flash memory cells
US7466590B2 (en) * 2004-02-06 2008-12-16 Sandisk Corporation Self-boosting method for flash memory cells
JP2005285942A (ja) * 2004-03-29 2005-10-13 Tadahiro Omi プラズマ処理方法及びプラズマ処理装置
US7091089B2 (en) * 2004-06-25 2006-08-15 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
US7361543B2 (en) 2004-11-12 2008-04-22 Freescale Semiconductor, Inc. Method of forming a nanocluster charge storage device
KR100673205B1 (ko) * 2004-11-24 2007-01-22 주식회사 하이닉스반도체 플래쉬 메모리소자의 제조방법
US20060270066A1 (en) * 2005-04-25 2006-11-30 Semiconductor Energy Laboratory Co., Ltd. Organic transistor, manufacturing method of semiconductor device and organic transistor
JP4734019B2 (ja) 2005-04-26 2011-07-27 株式会社東芝 半導体記憶装置及びその製造方法
JP2006310601A (ja) * 2005-04-28 2006-11-09 Toshiba Corp 半導体装置およびその製造方法
US7785947B2 (en) 2005-04-28 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma
US8318554B2 (en) 2005-04-28 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Method of forming gate insulating film for thin film transistors using plasma oxidation
US7410839B2 (en) 2005-04-28 2008-08-12 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
TWI408734B (zh) * 2005-04-28 2013-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US7364954B2 (en) 2005-04-28 2008-04-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
TWI450379B (zh) 2005-06-20 2014-08-21 國立大學法人 東北大學 層間絕緣膜及配線構造與此等之製造方法
US7820495B2 (en) * 2005-06-30 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101192613B1 (ko) 2005-09-26 2012-10-18 고에키자이단호진 고쿠사이카가쿠 신고우자이단 플라즈마 처리 방법 및 플라즈마 처리 장치
JP5222478B2 (ja) * 2006-02-10 2013-06-26 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置の作製方法
EP1818989A3 (en) 2006-02-10 2010-12-01 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device and manufacturing method thereof
US7428165B2 (en) 2006-03-30 2008-09-23 Sandisk Corporation Self-boosting method with suppression of high lateral electric fields
US7511995B2 (en) * 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
JP5235333B2 (ja) * 2006-05-26 2013-07-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101432766B1 (ko) 2006-05-26 2014-08-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작방법
JP2007324185A (ja) * 2006-05-30 2007-12-13 Canon Inc プラズマ処理方法
US8895388B2 (en) * 2006-07-21 2014-11-25 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and a non-volatile semiconductor storage device including the formation of an insulating layer using a plasma treatment
JP5010222B2 (ja) 2006-09-21 2012-08-29 株式会社東芝 不揮発性半導体記憶装置
KR101070568B1 (ko) 2006-09-29 2011-10-05 도쿄엘렉트론가부시키가이샤 실리콘 산화막의 형성 방법, 플라즈마 처리 장치 및 기억 매체
US8581260B2 (en) * 2007-02-22 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory
CN102033361B (zh) * 2008-03-21 2013-03-06 北京京东方光电科技有限公司 液晶取向层的制作方法
CN102239571B (zh) 2008-12-04 2014-03-19 三菱电机株式会社 薄膜光电变换装置的制造方法
CN103451620A (zh) * 2013-09-02 2013-12-18 上海华力微电子有限公司 金属硅化物阻挡层的表面处理方法
KR102215393B1 (ko) * 2014-06-27 2021-02-16 인텔 코포레이션 가변 크기 핀을 가진 다중 게이트 트랜지스터
CN108807165B (zh) * 2018-06-14 2021-04-13 上海华力集成电路制造有限公司 氧化层的制造方法
US10666353B1 (en) * 2018-11-20 2020-05-26 Juniper Networks, Inc. Normal incidence photodetector with self-test functionality
DE112018008193T5 (de) * 2018-12-05 2021-10-14 Mitsubishi Electric Corporation Halbleitereinheit und verfahren zur herstellung einer halbleitereinheit
CN116364718A (zh) * 2021-12-28 2023-06-30 联华电子股份有限公司 半导体结构及其制造方法

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3447238A (en) * 1965-08-09 1969-06-03 Raytheon Co Method of making a field effect transistor by diffusion,coating with an oxide and placing a metal layer on the oxide
US4089992A (en) * 1965-10-11 1978-05-16 International Business Machines Corporation Method for depositing continuous pinhole free silicon nitride films and products produced thereby
US3650042A (en) * 1969-05-19 1972-03-21 Ibm Gas barrier for interconnecting and isolating two atmospheres
US3765935A (en) * 1971-08-10 1973-10-16 Bell Telephone Labor Inc Radiation resistant coatings for semiconductor devices
DE3280026D1 (en) * 1981-05-29 1989-12-21 Kanegafuchi Chemical Ind Process for preparing amorphous silicon semiconductor
FR2519770B1 (fr) * 1982-01-08 1985-10-04 Thomson Csf Systeme d'antenne a pouvoir separateur eleve
DE3379525D1 (en) * 1982-12-27 1989-05-03 Mitsubishi Monsanto Chem Epitaxial wafer for use in the production of an infrared led
DE3689735T2 (de) * 1985-08-02 1994-06-30 Semiconductor Energy Lab Verfahren und Gerät zur Herstellung von Halbleitervorrichtungen.
US4895734A (en) * 1987-03-31 1990-01-23 Hitachi Chemical Company, Ltd. Process for forming insulating film used in thin film electroluminescent device
FR2614317B1 (fr) * 1987-04-22 1989-07-13 Air Liquide Procede de protection de substrat polymerique par depot par plasma de composes du type oxynitrure de silicium et dispositif pour sa mise en oeuvre.
US4854263B1 (en) * 1987-08-14 1997-06-17 Applied Materials Inc Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films
US5164040A (en) * 1989-08-21 1992-11-17 Martin Marietta Energy Systems, Inc. Method and apparatus for rapidly growing films on substrates using pulsed supersonic jets
JPH0740569B2 (ja) * 1990-02-27 1995-05-01 エイ・ティ・アンド・ティ・コーポレーション Ｅｃｒプラズマ堆積方法
US5225366A (en) * 1990-06-22 1993-07-06 The United States Of America As Represented By The Secretary Of The Navy Apparatus for and a method of growing thin films of elemental semiconductors
JP2880322B2 (ja) * 1991-05-24 1999-04-05 キヤノン株式会社 堆積膜の形成方法
JPH0563172A (ja) * 1991-09-02 1993-03-12 Hitachi Ltd 半導体装置とその製造方法
US5340754A (en) * 1992-09-02 1994-08-23 Motorla, Inc. Method for forming a transistor having a dynamic connection between a substrate and a channel region
JPH06120152A (ja) * 1992-10-06 1994-04-28 Nippondenso Co Ltd 水素ドープ非晶質半導体膜の製造方法
JP3190745B2 (ja) * 1992-10-27 2001-07-23 株式会社東芝 気相成長方法
DE4340590A1 (de) * 1992-12-03 1994-06-09 Hewlett Packard Co Grabenisolation unter Verwendung dotierter Seitenwände
US5543356A (en) * 1993-11-10 1996-08-06 Hitachi, Ltd. Method of impurity doping into semiconductor
US5716709A (en) * 1994-07-14 1998-02-10 Competitive Technologies, Inc. Multilayered nanostructures comprising alternating organic and inorganic ionic layers
JP3146113B2 (ja) * 1994-08-30 2001-03-12 シャープ株式会社 薄膜トランジスタの製造方法および液晶表示装置
US5656834A (en) * 1994-09-19 1997-08-12 Philips Electronics North America Corporation IC standard cell designed with embedded capacitors
JP3016701B2 (ja) 1995-02-07 2000-03-06 三洋電機株式会社 水素化非晶質シリコンの製造方法
US5601656A (en) * 1995-09-20 1997-02-11 Micron Technology, Inc. Methods for cleaning silicon wafers with an aqueous solution of hydrofluoric acid and hydriodic acid
US5763327A (en) * 1995-11-08 1998-06-09 Advanced Micro Devices, Inc. Integrated arc and polysilicon etching process
US6106678A (en) * 1996-03-29 2000-08-22 Lam Research Corporation Method of high density plasma CVD gap-filling
US5702869A (en) * 1996-06-07 1997-12-30 Vanguard International Semiconductor Corporation Soft ashing method for removing fluorinated photoresists layers from semiconductor substrates
JP3220645B2 (ja) * 1996-09-06 2001-10-22 富士通株式会社 半導体装置の製造方法
JPH10275913A (ja) * 1997-03-28 1998-10-13 Sanyo Electric Co Ltd 半導体装置、半導体装置の製造方法及び薄膜トランジスタの製造方法
JP3222404B2 (ja) * 1997-06-20 2001-10-29 科学技術振興事業団 半導体基板表面の絶縁膜の形成方法及びその形成装置
JP2000022185A (ja) * 1998-07-03 2000-01-21 Sharp Corp 太陽電池セル及びその製造方法
US20010052323A1 (en) * 1999-02-17 2001-12-20 Ellie Yieh Method and apparatus for forming material layers from atomic gasses
KR100745495B1 (ko) * 1999-03-10 2007-08-03 동경 엘렉트론 주식회사 반도체 제조방법 및 반도체 제조장치
JP4119029B2 (ja) * 1999-03-10 2008-07-16 東京エレクトロン株式会社 半導体装置の製造方法
US6461909B1 (en) * 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
JP4713752B2 (ja) * 2000-12-28 2011-06-29 財団法人国際科学振興財団 半導体装置およびその製造方法
US6586792B2 (en) * 2001-03-15 2003-07-01 Micron Technology, Inc. Structures, methods, and systems for ferroelectric memory transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101096909B1 (ko) 2009-12-04 2011-12-22 주식회사 하이닉스반도체 반도체 소자의 트랜지스터 및 그 형성방법

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US20040102052A1 (en) 2004-05-27
JP2002261091A (ja) 2002-09-13
IL156619A0 (en) 2004-01-04
WO2002054473A1 (en) 2002-07-11
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US6975018B2 (en) 2005-12-13
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CN100352016C (zh) 2007-11-28
CA2433565A1 (en) 2002-07-11
US20050272266A1 (en) 2005-12-08
IL181060A (en) 2011-03-31
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JP4713752B2 (ja) 2011-06-29
IL181060A0 (en) 2007-07-04
EP1347506A1 (en) 2003-09-24

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