KR100587829B1 - 전자 컴포넌트, 특히 표면 탄성파로 작동하는 표면파 컴포넌트를 제조하기 위한 방법 - Google Patents
전자 컴포넌트, 특히 표면 탄성파로 작동하는 표면파 컴포넌트를 제조하기 위한 방법 Download PDFInfo
- Publication number
- KR100587829B1 KR100587829B1 KR1020007008945A KR20007008945A KR100587829B1 KR 100587829 B1 KR100587829 B1 KR 100587829B1 KR 1020007008945 A KR1020007008945 A KR 1020007008945A KR 20007008945 A KR20007008945 A KR 20007008945A KR 100587829 B1 KR100587829 B1 KR 100587829B1
- Authority
- KR
- South Korea
- Prior art keywords
- carrier plate
- thin film
- chip
- plate
- electronic components
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49139—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49139—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture
- Y10T29/4914—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture with deforming of lead or terminal
- Y10T29/49142—Assembling to base an electrical component, e.g., capacitor, etc. by inserting component lead or terminal into base aperture with deforming of lead or terminal including metal fusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49789—Obtaining plural product pieces from unitary workpiece
Abstract
Description
Claims (17)
- 전자 컴포넌트들을 제조하기 위한 방법으로서,베이스 플레이트 영역(A)들을 나타내는 캐리어 플레이트(10)를 제공하는 단계 - 상기 캐리어 플레이트(10)는 베이스 플레이트(2)들로 분리될 수 있고, 각각의 베이스 플레이트는 상기 베이스 플레이트 영역들 중 하나와 연관됨 -;상기 캐리어 플레이트(10)의 각각의 베이스 플레이트 영역(A)에 상호접속부들을 제공하는 단계;플립-칩 기술을 통해 상기 베이스 플레이트 영역(A)마다 하나의 칩(1)을 상기 상호접속부들에 접촉시키는 단계;덮개 박막으로서 B-상태의 접착제로 이루어진 플라스틱 박막(4)을 상기 칩(1)이 구비된 캐리어 플레이트(10)에 제공하는 단계;상기 캐리어 플레이트(10)를 향해 대향하는 칩 표면을 제외한 각각의 상기 칩을 둘러싸고 상기 칩들 사이의 영역들에서 상기 캐리어 플레이트(10)상에 놓이도록 상기 덮개 박막을 압력 및 열 처리하는 단계; 및상기 캐리어 플레이트(10)를 개별적인 상기 전자 컴포넌트들로 분리시키는 단계를 포함하는 전자 컴포넌트들의 제조 방법.
- 제 1 항에 있어서,상기 덮개 박막(4)을 금속-코팅하는 단계를 더 포함하는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 캐리어 플레이트(10)를 향한 대향 표면 상에 상기 덮개 박막(4)을 접착제 코팅하는 단계를 더 포함하는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 베이스 플레이트(2)들에 의해 규정된 그리드 치수들로 미리 상기 덮개 박막을 캡 형상으로 딥-드로잉(deep-drawing)하는 단계;상기 칩이 구비된 캐리어 플레이트(10) 상부에 상기 덮개 박막을 슬라이딩시키는 단계; 및상기 캐리어 플레이트(10) 상에 놓인 상기 덮개 박막의 영역들을 상기 캐리어 플레이트에 연결시키는 단계를 더 포함하는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 덮개 박막(4)은 압력 및 열 처리에 의해 상기 칩(1)들 및 상기 캐리어 플레이트(10) 상에 제공되는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 5 항에 있어서,상기 압력 및 열 처리는 진공 상태에서 이루어지는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 캐리어 플레이트(10)로서 세라믹 플레이트 또는 플라스틱 플레이트가 사용되는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 7 항에 있어서,상기 캐리어 플레이트(10)로서 양측면들상에서 관통-접촉되고 상호접속부들로 코팅된 세리믹 플레이트 또는 플라스틱 플레이트가 사용되는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 칩(1)을 둘러싼 후에 상기 덮개 박막을 플라스틱(7)으로 압축 성형하거나 주조하는 단계를 더 포함하는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 플라스틱 박막(3; 4)의 외부면 또는 내부면 상에 댐핑(damping) 물질로 이루어진 부분 연속층(layer sequence)들을 제공하는 단계 - 상기 연속층들은 임의의 경우에 압축 성형 또는 주조 물질(7)과 상호 작용하여 방해하는 벌크 탄성파(bulk acoustic wave)를 감쇠시키도록 적응됨 -를 더 포함하는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 10 항에 있어서,상기 댐핑 물질로서 충진된 에폭시 수지가 사용되는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 제 11 항에 있어서,상기 에폭시 수지는 SiO2, W, W03 또는 Ag로 충진되는 것을 특징으로 하는 전자 컴포넌트들의 제조 방법.
- 삭제
- 삭제
- 삭제
- 삭제
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19806818.2 | 1998-02-18 | ||
DE19806818A DE19806818C1 (de) | 1998-02-18 | 1998-02-18 | Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010024911A KR20010024911A (ko) | 2001-03-26 |
KR100587829B1 true KR100587829B1 (ko) | 2006-06-13 |
Family
ID=7858198
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007008945A KR100587829B1 (ko) | 1998-02-18 | 1999-02-05 | 전자 컴포넌트, 특히 표면 탄성파로 작동하는 표면파 컴포넌트를 제조하기 위한 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6722030B1 (ko) |
EP (1) | EP1055285B1 (ko) |
JP (1) | JP2002504773A (ko) |
KR (1) | KR100587829B1 (ko) |
CN (1) | CN1127203C (ko) |
CA (1) | CA2321473A1 (ko) |
DE (2) | DE19806818C1 (ko) |
WO (1) | WO1999043084A1 (ko) |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2799883B1 (fr) | 1999-10-15 | 2003-05-30 | Thomson Csf | Procede d'encapsulation de composants electroniques |
DE19962231A1 (de) * | 1999-12-22 | 2001-07-12 | Infineon Technologies Ag | Verfahren zur Herstellung mikromechanischer Strukturen |
AUPR245301A0 (en) * | 2001-01-10 | 2001-02-01 | Silverbrook Research Pty Ltd | An apparatus (WSM06) |
DE10136743B4 (de) | 2001-07-27 | 2013-02-14 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelementes |
DE10137619A1 (de) * | 2001-08-01 | 2003-02-27 | Infineon Technologies Ag | Abdeckelement für Baugruppen |
DE10142542A1 (de) * | 2001-08-30 | 2003-03-27 | Infineon Technologies Ag | Anordnung eines Halbleiterchips in einem Gehäuse, Chipkarte und Chipmodul |
WO2003032484A1 (de) * | 2001-09-28 | 2003-04-17 | Epcos Ag | Verfahren zur verkapselung eines elektrischen bauelementes und damit verkapseltes oberflächenwellenbauelement |
DE10152343B4 (de) * | 2001-10-24 | 2011-08-11 | Epcos Ag, 81669 | Verfahren zur Verkapselung eines elektrischen Bauelementes und verkapseltes Oberflächenwellenbauelement |
DE10147877B4 (de) * | 2001-09-28 | 2011-08-11 | Epcos Ag, 81669 | Verfahren zur Herstellung eines Bauelementträgers geringer Bauhöhe |
KR100431181B1 (ko) * | 2001-12-07 | 2004-05-12 | 삼성전기주식회사 | 표면 탄성파 필터 패키지 제조방법 |
DE10164502B4 (de) * | 2001-12-28 | 2013-07-04 | Epcos Ag | Verfahren zur hermetischen Verkapselung eines Bauelements |
DE10164494B9 (de) * | 2001-12-28 | 2014-08-21 | Epcos Ag | Verkapseltes Bauelement mit geringer Bauhöhe sowie Verfahren zur Herstellung |
JP2003273571A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 素子間干渉電波シールド型高周波モジュール |
DE10238523B4 (de) * | 2002-08-22 | 2014-10-02 | Epcos Ag | Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung |
JP3702961B2 (ja) | 2002-10-04 | 2005-10-05 | 東洋通信機株式会社 | 表面実装型sawデバイスの製造方法 |
JP2004201285A (ja) * | 2002-12-06 | 2004-07-15 | Murata Mfg Co Ltd | 圧電部品の製造方法および圧電部品 |
DE10329329B4 (de) * | 2003-06-30 | 2005-08-18 | Siemens Ag | Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung |
US7239023B2 (en) | 2003-09-24 | 2007-07-03 | Tai-Saw Technology Co., Ltd. | Package assembly for electronic device |
DE102004020204A1 (de) | 2004-04-22 | 2005-11-10 | Epcos Ag | Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung |
CN1315186C (zh) * | 2004-05-01 | 2007-05-09 | 江苏长电科技股份有限公司 | 微型倒装晶体管的制造方法 |
US7298231B2 (en) | 2004-05-27 | 2007-11-20 | Kyocera Corporation | Surface acoustic wave device and communication apparatus |
DE102004038250A1 (de) * | 2004-08-05 | 2006-03-16 | Endress + Hauser Wetzer Gmbh + Co. Kg | Vorrichtung zur Aufnahme und zur Befestigung eines elektronischen Bauelements auf einer Leiterplatte |
US7608789B2 (en) * | 2004-08-12 | 2009-10-27 | Epcos Ag | Component arrangement provided with a carrier substrate |
US20060044771A1 (en) * | 2004-08-24 | 2006-03-02 | Yeo Chee K | Electronic module with conductive polymer |
US7897436B2 (en) * | 2004-11-26 | 2011-03-01 | Stmicroelectronics, S.A. | Process for packaging micro-components using a matrix |
DE602005001386T2 (de) * | 2004-11-26 | 2008-02-14 | Stmicroelectronics S.A. | Verfahren zur Häusung von Mikrobauteilen mittels einer Pressform |
US7477118B2 (en) | 2005-01-20 | 2009-01-13 | Kyocera Corporation | High frequency device mounting substrate and communications apparatus |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
DE102005008511B4 (de) | 2005-02-24 | 2019-09-12 | Tdk Corporation | MEMS-Mikrofon |
DE102005008512B4 (de) | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
DE102005050398A1 (de) * | 2005-10-20 | 2007-04-26 | Epcos Ag | Gehäuse mit Hohlraum für ein mechanisch empfindliches elektronisches Bauelement und Verfahren zur Herstellung |
DE102005053765B4 (de) | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102005053767B4 (de) | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
US7651879B2 (en) * | 2005-12-07 | 2010-01-26 | Honeywell International Inc. | Surface acoustic wave pressure sensors |
DE102006025162B3 (de) | 2006-05-30 | 2008-01-31 | Epcos Ag | Flip-Chip-Bauelement und Verfahren zur Herstellung |
US7687895B2 (en) * | 2007-04-30 | 2010-03-30 | Infineon Technologies Ag | Workpiece with semiconductor chips and molding, semiconductor device and method for producing a workpiece with semiconductors chips |
DE102007020656B4 (de) | 2007-04-30 | 2009-05-07 | Infineon Technologies Ag | Werkstück mit Halbleiterchips, Halbleiterbauteil und Verfahren zur Herstellung eines Werkstücks mit Halbleiterchips |
DE102008016487A1 (de) | 2008-03-31 | 2009-10-01 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
DE102010054782A1 (de) | 2010-12-16 | 2012-06-21 | Epcos Ag | Gehäustes elektrisches Bauelement |
DE102010056431B4 (de) * | 2010-12-28 | 2012-09-27 | Epcos Ag | Bauelement und Verfahren zum Herstellen eines Bauelements |
CN102970831B (zh) * | 2012-11-27 | 2015-11-25 | 谢忠 | 一种ic卡电子芯片与柔性线路板的真空吸附连接绑定工艺 |
DE102013106353B4 (de) * | 2013-06-18 | 2018-06-28 | Tdk Corporation | Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement |
CN104754931A (zh) * | 2013-12-31 | 2015-07-01 | 弗兰克·魏 | 表面贴片元件用的存储卡、送料器以及自动贴片机 |
US10211072B2 (en) * | 2017-06-23 | 2019-02-19 | Applied Materials, Inc. | Method of reconstituted substrate formation for advanced packaging applications |
CN108022886A (zh) * | 2017-11-30 | 2018-05-11 | 深圳华远微电科技有限公司 | 一种倒装芯片式滤波器的封装结构 |
DE102018100958B3 (de) | 2018-01-17 | 2019-03-14 | Infineon Technologies Ag | Verfahren zum bilden einer chipanordnung, chipanordnung, verfahren zum bilden eines chipbausteins und chipbaustein |
US11244876B2 (en) | 2019-10-09 | 2022-02-08 | Microchip Technology Inc. | Packaged semiconductor die with micro-cavity |
KR20210092122A (ko) * | 2020-01-14 | 2021-07-23 | 파워테크 테크놀로지 인코포레이티드 | 후면 증착형 차폐층을 갖는 배치-타입 반도체 패키징 구조물 및 그 제조 방법 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4426773A (en) * | 1981-05-15 | 1984-01-24 | General Electric Ceramics, Inc. | Array of electronic packaging substrates |
DE3138743A1 (de) * | 1981-09-29 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | In einem dichten gehaeuse montiertes oberflaechenwellenfilter und dergleichen |
US5437899A (en) * | 1992-07-14 | 1995-08-01 | Composite Development Corporation | Structural element formed of a fiber reinforced thermoplastic material and method of manufacture |
US5410789A (en) | 1992-11-13 | 1995-05-02 | Murata Manufacturing Co., Ltd. | Method of manufacturing piezoelectric-resonator having vibrating spaces formed therein |
US5459368A (en) * | 1993-08-06 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device mounted module |
KR0171921B1 (ko) | 1993-09-13 | 1999-03-30 | 모리시타 요이찌 | 전자부품과 그 제조방법 |
JP3541491B2 (ja) * | 1994-06-22 | 2004-07-14 | セイコーエプソン株式会社 | 電子部品 |
US5815900A (en) * | 1995-03-06 | 1998-10-06 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing a surface acoustic wave module |
JPH098596A (ja) | 1995-06-19 | 1997-01-10 | Kokusai Electric Co Ltd | チップ状弾性表面波装置及びその製造方法 |
JP3825475B2 (ja) | 1995-06-30 | 2006-09-27 | 株式会社 東芝 | 電子部品の製造方法 |
DE19620940A1 (de) * | 1995-11-17 | 1997-05-22 | Werner Prof Dr Buff | Elektronisches Bauelement und Verfahren zu seiner Herstellung |
DE19548051A1 (de) | 1995-12-21 | 1997-06-26 | Siemens Matsushita Components | Elektronisches Bauelement insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement - |
DE19548062A1 (de) | 1995-12-21 | 1997-06-26 | Siemens Matsushita Components | Elektrisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement - sowie ein Verfahren zu dessen Herstellung |
DE19548050A1 (de) | 1995-12-21 | 1997-06-26 | Siemens Matsushita Components | Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement - |
DE19548046C2 (de) * | 1995-12-21 | 1998-01-15 | Siemens Matsushita Components | Verfahren zur Herstellung von für eine Flip-Chip-Montage geeigneten Kontakten von elektrischen Bauelementen |
EP0794616B1 (en) | 1996-03-08 | 2003-01-29 | Matsushita Electric Industrial Co., Ltd. | An electronic part and a method of production thereof |
CA2255961A1 (en) * | 1996-05-24 | 1997-12-04 | Siemens Matsushita Components Gmbh & Co. Kg | Electronic component, in particular a component using acoustical surface acoustic waves |
-
1998
- 1998-02-18 DE DE19806818A patent/DE19806818C1/de not_active Expired - Fee Related
-
1999
- 1999-02-05 EP EP99913068A patent/EP1055285B1/de not_active Expired - Lifetime
- 1999-02-05 CN CN99803133A patent/CN1127203C/zh not_active Expired - Lifetime
- 1999-02-05 WO PCT/DE1999/000307 patent/WO1999043084A1/de active IP Right Grant
- 1999-02-05 CA CA002321473A patent/CA2321473A1/en not_active Abandoned
- 1999-02-05 DE DE59903019T patent/DE59903019D1/de not_active Expired - Lifetime
- 1999-02-05 KR KR1020007008945A patent/KR100587829B1/ko not_active IP Right Cessation
- 1999-02-05 JP JP2000532914A patent/JP2002504773A/ja active Pending
- 1999-02-05 US US09/622,351 patent/US6722030B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1055285B1 (de) | 2002-10-09 |
DE59903019D1 (de) | 2002-11-14 |
WO1999043084A1 (de) | 1999-08-26 |
KR20010024911A (ko) | 2001-03-26 |
EP1055285A1 (de) | 2000-11-29 |
US6722030B1 (en) | 2004-04-20 |
CN1291375A (zh) | 2001-04-11 |
DE19806818C1 (de) | 1999-11-04 |
CN1127203C (zh) | 2003-11-05 |
CA2321473A1 (en) | 1999-08-26 |
JP2002504773A (ja) | 2002-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100587829B1 (ko) | 전자 컴포넌트, 특히 표면 탄성파로 작동하는 표면파 컴포넌트를 제조하기 위한 방법 | |
KR100742553B1 (ko) | 전자 컴포넌트의 패키징 방법 | |
EP0794616B1 (en) | An electronic part and a method of production thereof | |
US6519822B1 (en) | Method for producing an electronic component | |
US7518201B2 (en) | Method for encapsulating an electrical component, and surface acoustic wave device encapsulated using said method | |
US6928719B2 (en) | Method for fabricating surface acoustic wave filter package | |
JP2002510929A (ja) | 表面弾性波装置パッケージおよび方法 | |
WO2002009180A1 (en) | Plastic package base, air cavity type package and their manufacturing methods | |
KR20060073453A (ko) | 전자 부품 및 그 제조 방법 | |
JP3518407B2 (ja) | 半導体装置およびその製造方法 | |
US6448635B1 (en) | Surface acoustical wave flip chip | |
US20040159961A1 (en) | Semiconductor chip and method for producing housing | |
KR100843419B1 (ko) | 반도체 칩 패키지 및 제조방법 | |
JP3141020B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
CN218632005U (zh) | 芯片模组封装结构及电路板 | |
KR100431182B1 (ko) | 표면 탄성파 필터 칩 패키지 및 그 제조방법 | |
US11538726B2 (en) | Method for forming packaged semiconductor die with micro-cavity | |
US7652214B2 (en) | Electronic component package | |
KR100658230B1 (ko) | 표면탄성파를사용하는전자부품 | |
JPH0845973A (ja) | 半導体装置の製造方法 | |
JPH1155057A (ja) | 固体素子デバイスの製造方法 | |
JPH0774289A (ja) | 回路素子の封止構造 | |
JPH08307195A (ja) | 表面弾性波デバイスの実装構造 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130524 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140530 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150526 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160524 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170330 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180329 Year of fee payment: 13 |
|
EXPY | Expiration of term |