KR20010024911A - 전자 소자, 특히 표면 음파로 작동하는 표면파 소자를제조하기 위한 방법 - Google Patents
전자 소자, 특히 표면 음파로 작동하는 표면파 소자를제조하기 위한 방법 Download PDFInfo
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Abstract
Description
Claims (17)
- 베이스 플레이트(2)의 프린트 회로와 접촉된 능동 필터 구조물 및 압전 기판을 가진 칩(1);상기 칩을 둘러싼, 베이스 플레이트(2)상에 밀봉 방식으로 배치된 캡형 하우징;을 포함한 전자 소자, 특히 표면 음파로 작동하는 OFW-소자의 제조 방법에 있어서,인쇄 회로들이 베이스 플레이트들(2)로 세분화될 수 있는 캐리어 플레이트(10)의 베이스 플레이트 영역(A)에 제공되고,칩(1)이 각 베이스 플레이트 영역(A)에서 플립-칩 기술을 통해 상기 프린트 회로와 접촉되고,덮개 박막이 칩들이 장착된 상기 캐리어 플레이트(10) 상에 제공되고,상기 덮개 박막은 각 칩(1)을 - 캐리어 플레이트(10)를 향하는 칩 표면을 제외하고 - 둘러싸고, 상기 칩(1)사이 영역에서 캐리어 플레이트 표면상에 놓이도록 처리되고,상기 캐리어 플레이트(10)는 개별 OFW 소자(1,2)로 분리되는 것을 특징으로 하는 방법.
- 제 1 항에 있어서,플라스틱 박막(4)이 덮개 박막으로 사용되는 것을 특징으로 하는 방법.
- 제 1 항에 있어서,금속 코팅된 플라스틱 박막(4)이 덮개 박막으로 사용되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 3 항에 있어서,상기 캐리어 플레이트(10)를 향한 표면 상에 접착제 코팅된 플라스틱 박막(4)이 덮개 박막으로 사용되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 4 항에 있어서,B-상태의 접착제로 이루어진 플라스틱 박막(4)이 덮개 박막으로 사용되는 것을 특징으로 하는 방법.
- 제 1 항에 있어서,금속 박막(3)이 덮개 박막으로 사용되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 6 항에 있어서,상기 캐리어 플레이트(10)가 베이스 플레이트 치수에 상응하게, 납땜 가능한 금속 래스터(5)로 코팅되고,칩이 장착된 상기 캐리어 플레이트(10)상에 덮개 박막으로서 금속 박막(3)이 제공되고,상기 박막은 각 칩(1)을 - 캐리어 플레이트(10)에 인접한 칩 표면을 제외하고 - 둘러싸고, 상기 칩(1) 사이의 영역에서 상기 금속 래스터(5)상에 배치되고, 상기 금속 래스터와 납땜되도록 처리되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 7 항에 있어서,상기 덮개 박막이 우선 상기 베이스 플레이트(2)에 의해 결정된 래스터 크기로 캡 형태로 디프 드로잉 가공되고,칩이 장착된 캐리어 플레이트(10)를 덮고,상기 캐리어 플레이트(10)상에 있는 상기 박막의 영역이 상기 캐리어 플레이트와 접속되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 8 항에 있어서,상기 덮개 박막이 압력과 열 처리에 의해 상기 칩(1)및 상기 캐리어 플레이트(10)상에 제공되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 8 항에 있어서,상기 덮개 박막이 상기 금속 래스터(5)에 따른 초음파-방사에 의해 캐리어 플레이트(10)와 접속되는 것을 특징으로 하는 방법.
- 제 9 항에 있어서,압력 처리 및 열 처리가 진공상태에서 이루어지는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 8 항에 있어서,세라믹 또는 플라스틱 플레이트가 상기 캐리어 플레이트(10)로 사용되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 8 항 및 제 12 항에 있어서,관통 접속된, 양측이 프린트 회로로 코팅된 세리믹 또는 플라스틱 플레이트가 상기 캐리어 플레이트(10)로 사용되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 8 항에 있어서,상기 덮개 박막이 상기 칩(1)을 둘러싼 후에, 플라스틱(7)으로 코팅되거나 주조되는 것을 특징으로 하는 방법.
- 제 1 항 내지 제 8 항 및 제 14 항에 있어서,상기 금속 및 플라스틱 박막(3 ; 4)의 외부면 및/또는 내부면 상에, 댐핑 물질로 이루어진 연속 층이 부분적으로 제공되고,상기 연속 층은 경우에 따라 코팅 또는 주조 물질(7)과 함께 방해가 되는 벌크 음파(bulk wave)를 댐핑 시키도록 매칭되는 것을 특징으로 하는 방법.
- 제 15 항에 있어서,댐핑 물질로서 충전된 에폭시 수지가 사용되는 것을 특징으로 하는 방법.
- 제 16 항에 있어서,SiO2, W, W03또는 Ag 로 충전된 에폭시 수지가 사용되는 것을 특징으로 하는 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19806818A DE19806818C1 (de) | 1998-02-18 | 1998-02-18 | Verfahren zur Herstellung eines elektronischen Bauelements, insbesondere eines mit akustischen Oberflächenwllen arbeitenden OFW-Bauelements |
DE19806818.2 | 1998-02-18 |
Publications (2)
Publication Number | Publication Date |
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KR20010024911A true KR20010024911A (ko) | 2001-03-26 |
KR100587829B1 KR100587829B1 (ko) | 2006-06-13 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020007008945A KR100587829B1 (ko) | 1998-02-18 | 1999-02-05 | 전자 컴포넌트, 특히 표면 탄성파로 작동하는 표면파 컴포넌트를 제조하기 위한 방법 |
Country Status (8)
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US (1) | US6722030B1 (ko) |
EP (1) | EP1055285B1 (ko) |
JP (1) | JP2002504773A (ko) |
KR (1) | KR100587829B1 (ko) |
CN (1) | CN1127203C (ko) |
CA (1) | CA2321473A1 (ko) |
DE (2) | DE19806818C1 (ko) |
WO (1) | WO1999043084A1 (ko) |
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US7477118B2 (en) | 2005-01-20 | 2009-01-13 | Kyocera Corporation | High frequency device mounting substrate and communications apparatus |
DE102005008512B4 (de) | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
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DE102005053765B4 (de) | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102005053767B4 (de) | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
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DE102006025162B3 (de) | 2006-05-30 | 2008-01-31 | Epcos Ag | Flip-Chip-Bauelement und Verfahren zur Herstellung |
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DE102010054782A1 (de) | 2010-12-16 | 2012-06-21 | Epcos Ag | Gehäustes elektrisches Bauelement |
DE102010056431B4 (de) * | 2010-12-28 | 2012-09-27 | Epcos Ag | Bauelement und Verfahren zum Herstellen eines Bauelements |
CN102970831B (zh) * | 2012-11-27 | 2015-11-25 | 谢忠 | 一种ic卡电子芯片与柔性线路板的真空吸附连接绑定工艺 |
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CN108022886A (zh) * | 2017-11-30 | 2018-05-11 | 深圳华远微电科技有限公司 | 一种倒装芯片式滤波器的封装结构 |
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KR20210092122A (ko) * | 2020-01-14 | 2021-07-23 | 파워테크 테크놀로지 인코포레이티드 | 후면 증착형 차폐층을 갖는 배치-타입 반도체 패키징 구조물 및 그 제조 방법 |
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WO1997045955A1 (de) | 1996-05-24 | 1997-12-04 | Siemens Matsushita Components Gmbh & Co. Kg | Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement |
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1998
- 1998-02-18 DE DE19806818A patent/DE19806818C1/de not_active Expired - Fee Related
-
1999
- 1999-02-05 DE DE59903019T patent/DE59903019D1/de not_active Expired - Lifetime
- 1999-02-05 JP JP2000532914A patent/JP2002504773A/ja active Pending
- 1999-02-05 KR KR1020007008945A patent/KR100587829B1/ko not_active IP Right Cessation
- 1999-02-05 CN CN99803133A patent/CN1127203C/zh not_active Expired - Lifetime
- 1999-02-05 CA CA002321473A patent/CA2321473A1/en not_active Abandoned
- 1999-02-05 US US09/622,351 patent/US6722030B1/en not_active Expired - Lifetime
- 1999-02-05 WO PCT/DE1999/000307 patent/WO1999043084A1/de active IP Right Grant
- 1999-02-05 EP EP99913068A patent/EP1055285B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002504773A (ja) | 2002-02-12 |
DE59903019D1 (de) | 2002-11-14 |
CN1127203C (zh) | 2003-11-05 |
WO1999043084A1 (de) | 1999-08-26 |
EP1055285B1 (de) | 2002-10-09 |
CN1291375A (zh) | 2001-04-11 |
US6722030B1 (en) | 2004-04-20 |
DE19806818C1 (de) | 1999-11-04 |
EP1055285A1 (de) | 2000-11-29 |
CA2321473A1 (en) | 1999-08-26 |
KR100587829B1 (ko) | 2006-06-13 |
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