CN1127202C - 电子器件及其制造方法 - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
- Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
- Y10T29/49172—Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material
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- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
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Abstract
本发明涉及一种表面波器件及其制造方法,包括一个在压电衬底上形成的芯片(2),在所述芯片(IDT变换器及触片等)上形成导电构件,底板(3)带有与芯片上的导电构件相接触的外接触元件,一个以不漏气密封方法安装在所述底板上的框架(4),所述芯片放置在该框架内,并且与所述框架间隔开。在芯片(2)和底板(3)之间的区域封离有一个金箔(5),而在框架(4)和金箔(5)之间的区域填充了密封结合物(6),所述芯片(2)以及密封结合物(6)和框架(4)外面采用镀锌的外壳(7)或保护罩加以保护,保护罩的边缘(8)紧靠在底板(3)上,并且进行不漏气的密封处理。
Description
技术领域
本发明涉及一种电子器件,特别是采用声学表面波工作的OFW器件,以及制造这种器件的方法。
背景技术
这种电子器件,特别是采用声学表面波工作的OFW器件在其压电衬底上具有一个芯片,在芯片上形成有导电构件—数字转换器、触片和类似部件,该电子器件还包括一个底板,它带有从外面与芯片上的导电构件相接触的外接触元件,一个以不漏气密封方式安装在所述底板上的框架(4),所述芯片放置在该框架内,并且与所述框架间隔开。
198 06 550.7号德国专利说明书中公开了如上所述的电子器件,根据该说明书的记载,在电子器件的芯片表面上布置的导电构件带有一层保护膜,申请人将其称为PROTEC,其上形成从压电衬底掉头的表面电接触件,该电接触件与所述的保护膜完全接触,和/或通过焊接球—焊剂块—与芯片上的导电构件联接,该电接触件同时还与底板上的外接触件相互联接。
上述电子器件的优点是高度缩微化,并且其保护膜在物理上和化学上没有产生破坏环境的负面作用,而是对于环境保护起到了很好的作用。
发明内容
本发明的目的在于提供一种如上所述类型的进一步微形化的OFW器件,以及仅需很小开销的制造这种器件的方法,同时能够降低该器件的生产成本。
为实现本发明上述目的,在一个如上所述类型的电子器件的芯片和底板之间所形成的空间上气密地覆盖一层薄膜,例如塑料薄膜,而在框架和薄膜之间的空间区域内填充了薄膜或灌注料,例如环氧树脂,所述芯片以及灌注料和框架外面采用电镀材料形成的外壳涂层例如铜镍合金加以保护,保护涂层的边缘紧靠在底板上并且进行不漏气的密封处理。
这里建议采用如下的制造方法,将除了朝着底板转向的侧面之外的芯片与一个至少伸出至底板的薄膜模压在一起,向在框架和薄膜之间形成的空间区域内填充灌注料,接着利用例如等离子体蚀刻方法除去在无灌注料表面区域上的薄膜,最后在芯片和灌注料上形成一个由电镀材料构成的保护涂层。
省略掉保护膜,可以显著降低制造成本,并且减小整个电子器件的尺寸,此外,这种器件的可靠性明显提高,原因是在底板上进行焊接是采用倒装工艺实现的,在这种情况下,液态的焊接球或焊剂块能够流入空腔或缝隙内,就像用例如环氧树脂灌注器件的情况,不会发生危险,而且在将电子器件焊接在用户的电路中时,也不会发生危险。
附图说明
图1-3是本发明的一个电子器件的制造的局部剖视图和示意图。
具体实施方式
这里制造指的是批量生产,首先在底板3上形成一个单独的印刷电路板线路部件的衬底,尤其是陶瓷衬底板,从衬底板向上形成封闭的框架4,称为焊接框架,所述芯片2放置在该框架内,并且与所述框架间隔开,采用倒装工艺将芯片上的导电构件焊接到底板上的相应的导电线路条上。
在本发明的第一个步骤中,将除了朝着底板转向的侧面之外的焊接的芯片2与一个至少伸出至底板3的塑料薄膜或金属薄膜、胶粘薄膜模压压在一起,最好如图所示,在框架4和芯片2之间的空腔内的薄膜5覆盖在底板3和焊接框架4的整个表面上。可能的话,如果加工工艺先进,可以使薄膜5在焊接框架4上构成完全的包封层,并且其边缘紧贴在底板3上。
在本发明的又一个方法步骤中,在焊接框架4和所述薄膜5之间的空间内,如果必要的话,用灌注料6填充,例如用环氧树脂作为灌注料,然后利用等离子体蚀刻除去在未灌注的表面上的薄膜5,接着在芯片2和灌注料6及框架4上用可电镀的材料形成一个有效的起保护罩7作用的涂层。这里作为举例,优选采用铜镍合金制成保护罩7,它的边缘例如紧贴在底板3上,最后利用焊接技术进行不漏气的密封处理。
图1-3描述了一个OFB器件的各个制造步骤,不过其原理和方法步骤同样适用于批量生产,并且也已经在其他地方提及,例如可以用于制造在框架尤其是焊接框架内成排布置的具有许多芯片的大面积衬底(可利用率)。
Claims (11)
1、一种电子器件,该器件的压电衬底上具有一个芯片,在芯片上形成有导电构件,该电子器件还包括一个底板和一个以不漏气密封方式安装在所述底板上的框架,所述芯片放置在该框架内,并且与所述框架间隔开;所述底板带有从外面与芯片上的导电构件相接触的外接触元件;其特征在于,在芯片(2)和底板(3)之间所形成的空间上气密地覆盖一层薄膜(5),而在框架(4)和薄膜之间的空间区域内填充灌注料(6),所述芯片以及灌注料和框架外面采用可电镀材料形成的保护罩(7)加以保护,该保护罩(7)的边缘(8)紧贴在底板上。
2、如权利要求1所述的电子器件,其特征在于,由框架(4)、底板(3)和芯片(2)之间所限定的空间中至少其壁面和底面被薄膜(5)所覆盖。
3、如权利要求1所述的电子器件,其特征在于,框架(4)由可焊接材料制成,并且与形成在底板(3)上的一个可焊接层焊接联结。
4、如权利要求1所述的电子器件,其特征在于,保护罩(7)由一种铜镍合金制成。
5、如权利要求1所述的电子器件,其特征在于,灌注料(6)是环氧树脂。
6、如权利要求1所述的电子器件,其特征在于,薄膜(5)是塑料薄膜。
7、一种制造电子器件的方法,该电子器件的压电衬底上具有一个芯片,在芯片上形成有导电构件,该电子器件还包括一个底板和一个以不漏气密封方式安装在所述底板上的框架,所述芯片放置在该框架内,并且与所述框架间隔开;所述底板带有从外面与芯片上的导电构件相接触的外接触元件;其特征在于,将除了朝着底板(3)转向的侧面之外的芯片(2)与一个至少伸出至底板的薄膜(5)模压在一起,向在框架(4)和薄膜(5)之间形成的空间区域内填充灌注料(6),接着除去在无灌注料表面区域上的薄膜(5),最后在芯片(2)和灌注料(6)及框架(4)上形成一个由可电镀材料构成的保护罩(7)。
8、如权利要求7所述的方法,其特征在于,由框架(4)、底板(3)和芯片(2)之间所限定的空间的壁面和底面均被薄膜(5)所覆盖。
9、如权利要求7所述的方法,其特征在于,利用等离子体蚀刻方法除去在未灌注的表面上的薄膜(5)。
10、如权利要求7所述的方法,其特征在于,保护罩(7)是由铜镍合金构成的保护涂层。
11、如权利要求7或8所述的方法,其特征在于,利用在底板(3)上形成的单独的大面积衬底,并且在该衬底上成排布置许多芯片。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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DE19818824A DE19818824B4 (de) | 1998-04-27 | 1998-04-27 | Elektronisches Bauelement und Verfahren zu dessen Herstellung |
DE19818824.2 | 1998-04-27 |
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CN1298571A CN1298571A (zh) | 2001-06-06 |
CN1127202C true CN1127202C (zh) | 2003-11-05 |
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CN99805225A Expired - Lifetime CN1127202C (zh) | 1998-04-27 | 1999-03-25 | 电子器件及其制造方法 |
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US (1) | US6519822B1 (zh) |
EP (1) | EP1078451A1 (zh) |
JP (1) | JP2002513234A (zh) |
KR (1) | KR20010042990A (zh) |
CN (1) | CN1127202C (zh) |
CA (1) | CA2330039A1 (zh) |
DE (1) | DE19818824B4 (zh) |
WO (1) | WO1999056390A1 (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3974346B2 (ja) * | 2001-03-30 | 2007-09-12 | 富士通メディアデバイス株式会社 | 弾性表面波装置 |
US6930364B2 (en) * | 2001-09-13 | 2005-08-16 | Silicon Light Machines Corporation | Microelectronic mechanical system and methods |
DE10238523B4 (de) * | 2002-08-22 | 2014-10-02 | Epcos Ag | Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung |
US6877209B1 (en) | 2002-08-28 | 2005-04-12 | Silicon Light Machines, Inc. | Method for sealing an active area of a surface acoustic wave device on a wafer |
US6846423B1 (en) | 2002-08-28 | 2005-01-25 | Silicon Light Machines Corporation | Wafer-level seal for non-silicon-based devices |
DE10329329B4 (de) * | 2003-06-30 | 2005-08-18 | Siemens Ag | Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung |
WO2005099088A1 (en) * | 2004-03-26 | 2005-10-20 | Cypress Semiconductor Corp. | Integrated circuit having one or more conductive devices formed over a saw and/or mems device |
DE102004020204A1 (de) | 2004-04-22 | 2005-11-10 | Epcos Ag | Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung |
JP3998658B2 (ja) | 2004-04-28 | 2007-10-31 | 富士通メディアデバイス株式会社 | 弾性波デバイスおよびパッケージ基板 |
US7608789B2 (en) * | 2004-08-12 | 2009-10-27 | Epcos Ag | Component arrangement provided with a carrier substrate |
DE102005008514B4 (de) * | 2005-02-24 | 2019-05-16 | Tdk Corporation | Mikrofonmembran und Mikrofon mit der Mikrofonmembran |
DE102005008511B4 (de) * | 2005-02-24 | 2019-09-12 | Tdk Corporation | MEMS-Mikrofon |
DE102005008512B4 (de) | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
DE102005053765B4 (de) * | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
DE102005053767B4 (de) * | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
US20070251719A1 (en) * | 2006-04-27 | 2007-11-01 | Rick Sturdivant | Selective, hermetically sealed microwave package apparatus and methods |
DE102009053965B4 (de) * | 2009-11-19 | 2016-06-02 | Siemens Aktiengesellschaft | Mit einer Vergussmasse vergossene Gradientenspule |
DE102010022523B4 (de) | 2010-06-02 | 2017-09-14 | Siemens Healthcare Gmbh | Gradientenspule mit in einer Vergussmasse vergossenen Spulenwicklungen |
JP6116120B2 (ja) | 2012-01-24 | 2017-04-19 | 太陽誘電株式会社 | 弾性波デバイス及び弾性波デバイスの製造方法 |
DE102013106353B4 (de) * | 2013-06-18 | 2018-06-28 | Tdk Corporation | Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement |
CN103928409B (zh) * | 2014-03-17 | 2017-01-04 | 江苏省宜兴电子器件总厂 | 一种集成电路倒扣焊气密性封装结构 |
JP2022523476A (ja) * | 2019-01-18 | 2022-04-25 | トリナミクス ゲゼルシャフト ミット ベシュレンクテル ハフツング | 光学検出のための光センサ及び検出器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19548048A1 (de) * | 1995-12-21 | 1997-06-26 | Siemens Matsushita Components | Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement - |
WO1997045955A1 (de) * | 1996-05-24 | 1997-12-04 | Siemens Matsushita Components Gmbh & Co. Kg | Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5045820A (en) * | 1989-09-27 | 1991-09-03 | Motorola, Inc. | Three-dimensional microwave circuit carrier and integral waveguide coupler |
JP2673993B2 (ja) * | 1990-07-02 | 1997-11-05 | 日本無線株式会社 | 表面弾性波装置 |
JPH0590872A (ja) * | 1991-09-27 | 1993-04-09 | Sumitomo Electric Ind Ltd | 表面弾性波素子 |
JP2960608B2 (ja) * | 1992-06-04 | 1999-10-12 | キヤノン株式会社 | 液体噴射記録ヘッドの製造方法 |
FR2704074B1 (fr) * | 1993-04-15 | 1995-06-02 | France Telecom | Procédé de réalisation d'une cellule d'affichage avec reprise de contre-électrode. |
US5422514A (en) * | 1993-05-11 | 1995-06-06 | Micromodule Systems, Inc. | Packaging and interconnect system for integrated circuits |
US5459368A (en) * | 1993-08-06 | 1995-10-17 | Matsushita Electric Industrial Co., Ltd. | Surface acoustic wave device mounted module |
US5508558A (en) * | 1993-10-28 | 1996-04-16 | Digital Equipment Corporation | High density, high speed, semiconductor interconnect using-multilayer flexible substrate with unsupported central portion |
JPH07249877A (ja) * | 1994-03-10 | 1995-09-26 | Murata Mfg Co Ltd | 電子部品 |
US5573171A (en) * | 1995-02-16 | 1996-11-12 | Trw Inc. | Method of thin film patterning by reflow |
US5640746A (en) * | 1995-08-15 | 1997-06-24 | Motorola, Inc. | Method of hermetically encapsulating a crystal oscillator using a thermoplastic shell |
DE19548051A1 (de) * | 1995-12-21 | 1997-06-26 | Siemens Matsushita Components | Elektronisches Bauelement insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement - |
DE69718693T2 (de) * | 1996-03-08 | 2003-11-27 | Matsushita Electric Ind Co Ltd | Elektronisches Bauteil und Herstellungsverfahren |
DE19623826C2 (de) * | 1996-06-14 | 2000-06-15 | Siemens Ag | Verfahren zur Herstellung eines Trägerelements für Halbleiterchips |
JPH1027971A (ja) * | 1996-07-10 | 1998-01-27 | Nec Corp | 有機薄膜多層配線基板の切断方法 |
US5892417A (en) * | 1996-12-27 | 1999-04-06 | Motorola Inc. | Saw device package and method |
US6271598B1 (en) * | 1997-07-29 | 2001-08-07 | Cubic Memory, Inc. | Conductive epoxy flip-chip on chip |
JP3196693B2 (ja) * | 1997-08-05 | 2001-08-06 | 日本電気株式会社 | 表面弾性波装置およびその製造方法 |
DE19806550B4 (de) * | 1998-02-17 | 2004-07-22 | Epcos Ag | Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement |
-
1998
- 1998-04-27 DE DE19818824A patent/DE19818824B4/de not_active Expired - Lifetime
-
1999
- 1999-03-25 CN CN99805225A patent/CN1127202C/zh not_active Expired - Lifetime
- 1999-03-25 KR KR1020007011827A patent/KR20010042990A/ko not_active Application Discontinuation
- 1999-03-25 CA CA002330039A patent/CA2330039A1/en not_active Abandoned
- 1999-03-25 EP EP99920557A patent/EP1078451A1/de not_active Withdrawn
- 1999-03-25 JP JP2000546452A patent/JP2002513234A/ja not_active Withdrawn
- 1999-03-25 WO PCT/DE1999/000895 patent/WO1999056390A1/de not_active Application Discontinuation
-
2000
- 2000-10-30 US US09/699,321 patent/US6519822B1/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19548048A1 (de) * | 1995-12-21 | 1997-06-26 | Siemens Matsushita Components | Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement - |
WO1997045955A1 (de) * | 1996-05-24 | 1997-12-04 | Siemens Matsushita Components Gmbh & Co. Kg | Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement |
Also Published As
Publication number | Publication date |
---|---|
JP2002513234A (ja) | 2002-05-08 |
CN1298571A (zh) | 2001-06-06 |
DE19818824B4 (de) | 2008-07-31 |
KR20010042990A (ko) | 2001-05-25 |
WO1999056390A1 (de) | 1999-11-04 |
US6519822B1 (en) | 2003-02-18 |
EP1078451A1 (de) | 2001-02-28 |
CA2330039A1 (en) | 1999-11-04 |
DE19818824A1 (de) | 1999-11-04 |
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