CN1298571A - 电子器件 - Google Patents

电子器件 Download PDF

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CN1298571A
CN1298571A CN99805225A CN99805225A CN1298571A CN 1298571 A CN1298571 A CN 1298571A CN 99805225 A CN99805225 A CN 99805225A CN 99805225 A CN99805225 A CN 99805225A CN 1298571 A CN1298571 A CN 1298571A
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electronic device
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CN1127202C (zh
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A·斯特尔兹尔
H·克吕格尔
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SnapTrack Inc
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Epcos AG
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1078—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a foil covering the non-active sides of the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1071—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49146—Assembling to base an electrical component, e.g., capacitor, etc. with encapsulating, e.g., potting, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49169—Assembling electrical component directly to terminal or elongated conductor
    • Y10T29/49171—Assembling electrical component directly to terminal or elongated conductor with encapsulating
    • Y10T29/49172—Assembling electrical component directly to terminal or elongated conductor with encapsulating by molding of insulating material

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

本发明涉及一种表面波器件及其制造方法,包括一个在压电衬底上形成的芯片(2),在所述芯片(IDT变换器及触片等)上形成导电构件,底板(3)带有与芯片上的导电构件相接触的外接触元件,一个以不漏气密封方式安装在所述底板上的框架(4),所述芯片放置在该框架内,并且与所述框架间隔开。在芯片(2)和底板(3)之间的区域封离有一个金箔(5),而在框架(4)和金箔(5)之间的区域填充了密封结合物(6),所述芯片(2)以及密封结合物(6)和框架(4)外面采用镀锌的外壳(7)或保护罩加以保护,保护罩的边缘(8)紧靠在底板(3)上,并且进行不漏气的密封处理。

Description

电子器件
电子器件，特别是采用声学表面波工作的OFW器件，以及制造这种器件的方法。
本发明涉及一种电子器件，特别是采用声学表面波工作的OFW器件，该器件的压电衬底上具有一个芯片，在芯片上形成有导电构件-数字转换器、触片和类似部件，该电子器件还包括一个底板，它带有从外面与芯片上的导电构件相接触的外接触元件，一个以不漏气密封方式安装在所述底板上的框架(4)，所述芯片放置在该框架内，并且与所述框架间隔开。本发明还涉及一种制造这种电子器件的方法。
198 06 550.7号德国专利说明书中公开了如上所述的电子器件，根据该说明书的记载，在电子器件的芯片表面上布置的导电构件带有一层保护膜，申请人将其称为PROTEC，其上形成从压电衬底掉头的表面电接触件，该电接触件与所述的保护膜完全接触，和/或通过焊接球-焊剂块-与芯片上的导电构件联接，该电接触件同时还与底板上的外接触件相互联接。
上述电子器件的优点是高度缩微化，并且其保护膜在物理上和化学上没有产生破坏环境的负面作用，而是对于环境保护起到了很好的作用。
本发明的目的在于提供一种如上所述类型的进一步微形化的OFW器件，以及仅需很小开销的制造这种器件的方法，同时能够降低该器件的生产成本。
为实现本发明上述目的，在一个如上所述类型的电子器件的芯片和底板之间所形成的空间上气密地覆盖一层薄膜，例如塑料薄膜，而在框架和薄膜之间的空间区域内填充了薄膜或灌注料，例如环氧树脂，所述芯片以及灌注料和框架外面采用电镀材料形成的外壳涂层例如铜镍合金加以保护，保护涂层的边缘紧靠在底板上并且进行不漏气的密封处理。
这里建议采用如下的制造方法，将除了朝着底板转向的侧面之外的芯片与一个至少伸出至底板的薄膜模压在一起，向在框架和薄膜之间形成的空间区域内填充灌注料，接着利用例如等离子体蚀刻方法除去在无灌注料表面区域上的薄膜，最后在芯片和灌注料上形成一个由电镀材料构成的保护涂层。
根据本发明主题实现的其他特征的描述还可参见各从属权利要求和说明书及其附图的内容。
省略掉保护膜，可以显著降低制造成本，并且减小整个电子器件的尺寸，此外，这种器件的可靠性明显提高，原因是在底板上进行焊接是采用倒装工艺实现的，在这种情况下，液态的焊接球或焊剂块能够流入空腔或缝隙内，就像用例如环氧树脂灌注器件的情况，不会发生危险，而且在将电子器件焊接在用户的电路中时，也不会发生危险。
图1-3是本发明的一个电子器件的制造的局部剖视图和示意图。
这里制造指的是批量生产，首先在底板3上形成一个单独的印刷电路板线路部件的衬底，尤其是陶瓷衬底板，从衬底板向上形成封闭的框架4，称为焊接框架，所述芯片2放置在该框架内，并且与所述框架间隔开，采用倒装工艺将芯片上的导电构件焊接到底板上的相应的导电线路条上。
在本发明的第一个步骤中，将除了朝着底板转向的侧面之外的焊接的芯片2与一个至少伸出至底板3的塑料薄膜或金属薄膜、胶粘薄膜模压压在一起，最好如图所示，在框架4和芯片2之间的空腔内的薄膜5覆盖在底板3和焊接框架4的整个表面上。可能的话，如果加工工艺先进，可以使薄膜5在焊接框架4上构成完全的包封层，并且其边缘紧贴在底板3上。
在本发明的又一个方法步骤中，在焊接框架4和所述薄膜5之间的空间内，如果必要的话，用灌注料6填充，例如用环氧树脂作为灌注料，然后利用等离子体蚀刻除去在未灌注的表面上的薄膜5，接着在芯片2和灌注料6及框架4上用可电镀的材料形成一个有效的起保护罩作用的涂层7。这里作为举例，优选采用铜镍合金制成保护罩7，它的边缘例如紧贴在底板3上，最后利用焊接技术进行不漏气的密封处理。
图1-3描述了一个OFB器件的各个制造步骤，不过其原理和方法步骤同样适用于批量生产，并且也已经在其他地方提及，例如可以用于制造在框架尤其是焊接框架内成排布置的具有许多芯片的大面积底板(可利用率)。

Claims (11)

1、一种电子器件，特别是采用声学表面波工作的OFW器件，该器件的压电衬底上具有一个芯片，在芯片上形成有导电构件-IDT转换器、触片和类似部件，该电子器件还包括一个底板，它带有从外面与芯片上的导电构件相接触的外接触元件，一个以不漏气密封方式安装在所述底板上的框架，所述芯片放置在该框架内，并且与所述框架间隔开，其特征在于，
在芯片(2)和底板(3)之间所形成的空间上气密地覆盖一层薄膜(5)，而在框架(4)和薄膜之间的空间区域内填充灌注料(6)，所述芯片以及灌注料和框架外面采用可电镀材料形成的外壳涂层(7)加以保护，该保护涂层的边缘(8)紧贴在底板上。
2、如权利要求1所述的电子器件，其特征在于，由框架(4)、底板(3)和芯片(2)之间所限定的空间中至少其壁面和底面被薄膜(5)所覆盖。
3、如权利要求1所述的电子器件，其特征在于，框架(4)由可焊接材料制成，并且与形成在底板(3)上的一个可焊接层焊接联结。
4、如权利要求1所述的电子器件，其特征在于，保护罩(7)由一种铜镍合金制成。
5、如权利要求1所述的电子器件，其特征在于，灌注料(6)是环氧树脂。
6、如权利要求1所述的电子器件，其特征在于，薄膜(5)是塑料薄膜。
7、一种制造如权利要求1-5所述的电子器件所述的方法，具有在一个框架(4)内的形成在一个底板(3)上的芯片(2)，还具有被气密覆盖的在所述芯片和底板之间所形成的空间，其特征在于，
将除了朝着底板(3)转向的侧面之外的芯片(2)与一个至少伸出至底板的薄膜(5)模压在一起，向在框架(4)和薄膜(5)之间形成的空间区域内填充灌注料(6)，接着除去在无灌注料表面区域上的薄膜(5)，最后在芯片(2)和灌注料(6)及框架(4)上形成一个由可电镀材料构成的保护罩(7)。
8、如权利要求7所述的方法，其特征在于，由框架(4)、底板(3)和芯片(2)之间所限定的空间的壁面和底面均被薄膜(5)所覆盖。
9、如权利要求7和8所述的方法，其特征在于，利用等离子体蚀刻方法除去在未灌注的表面上的薄膜(5)。
10、如权利要求7所述的方法，其特征在于，保护罩(7)是由铜镍合金构成的保护涂层。
11、如权利要求7和权利要求8-10中至少一项所述的方法，其特征在于，所述方法适用于制造其上成排布置有许多芯片的晶片(可利用率)。
CN99805225A 1998-04-27 1999-03-25 电子器件及其制造方法 Expired - Lifetime CN1127202C (zh)

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DE19818824A DE19818824B4 (de) 1998-04-27 1998-04-27 Elektronisches Bauelement und Verfahren zu dessen Herstellung
DE19818824.2 1998-04-27

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EP (1) EP1078451A1 (zh)
JP (1) JP2002513234A (zh)
KR (1) KR20010042990A (zh)
CN (1) CN1127202C (zh)
CA (1) CA2330039A1 (zh)
DE (1) DE19818824B4 (zh)
WO (1) WO1999056390A1 (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102079845A (zh) * 2009-11-19 2011-06-01 西门子公司 适用于浇铸电子元件、尤其是大型线圈如梯度线圈的灌注料
CN103928409A (zh) * 2014-03-17 2014-07-16 江苏省宜兴电子器件总厂 一种集成电路倒扣焊气密性封装结构
CN113302750A (zh) * 2019-01-18 2021-08-24 特里纳米克斯股份有限公司 光学传感器和用于光学检测的检测器

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3974346B2 (ja) * 2001-03-30 2007-09-12 富士通メディアデバイス株式会社 弾性表面波装置
US6930364B2 (en) * 2001-09-13 2005-08-16 Silicon Light Machines Corporation Microelectronic mechanical system and methods
DE10238523B4 (de) 2002-08-22 2014-10-02 Epcos Ag Verkapseltes elektronisches Bauelement und Verfahren zur Herstellung
US6877209B1 (en) 2002-08-28 2005-04-12 Silicon Light Machines, Inc. Method for sealing an active area of a surface acoustic wave device on a wafer
US6846423B1 (en) 2002-08-28 2005-01-25 Silicon Light Machines Corporation Wafer-level seal for non-silicon-based devices
DE10329329B4 (de) * 2003-06-30 2005-08-18 Siemens Ag Hochfrequenz-Gehäuse und Verfahren zu seiner Herstellung
US7750420B2 (en) * 2004-03-26 2010-07-06 Cypress Semiconductor Corporation Integrated circuit having one or more conductive devices formed over a SAW and/or MEMS device
DE102004020204A1 (de) 2004-04-22 2005-11-10 Epcos Ag Verkapseltes elektrisches Bauelement und Verfahren zur Herstellung
JP3998658B2 (ja) 2004-04-28 2007-10-31 富士通メディアデバイス株式会社 弾性波デバイスおよびパッケージ基板
US7608789B2 (en) * 2004-08-12 2009-10-27 Epcos Ag Component arrangement provided with a carrier substrate
DE102005008511B4 (de) * 2005-02-24 2019-09-12 Tdk Corporation MEMS-Mikrofon
DE102005008514B4 (de) * 2005-02-24 2019-05-16 Tdk Corporation Mikrofonmembran und Mikrofon mit der Mikrofonmembran
DE102005008512B4 (de) 2005-02-24 2016-06-23 Epcos Ag Elektrisches Modul mit einem MEMS-Mikrofon
DE102005053765B4 (de) * 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
DE102005053767B4 (de) * 2005-11-10 2014-10-30 Epcos Ag MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau
US20070251719A1 (en) * 2006-04-27 2007-11-01 Rick Sturdivant Selective, hermetically sealed microwave package apparatus and methods
DE102010022523B4 (de) 2010-06-02 2017-09-14 Siemens Healthcare Gmbh Gradientenspule mit in einer Vergussmasse vergossenen Spulenwicklungen
JP6116120B2 (ja) 2012-01-24 2017-04-19 太陽誘電株式会社 弾性波デバイス及び弾性波デバイスの製造方法
DE102013106353B4 (de) * 2013-06-18 2018-06-28 Tdk Corporation Verfahren zum Aufbringen einer strukturierten Beschichtung auf ein Bauelement

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5045820A (en) * 1989-09-27 1991-09-03 Motorola, Inc. Three-dimensional microwave circuit carrier and integral waveguide coupler
JP2673993B2 (ja) * 1990-07-02 1997-11-05 日本無線株式会社 表面弾性波装置
JPH0590872A (ja) * 1991-09-27 1993-04-09 Sumitomo Electric Ind Ltd 表面弾性波素子
JP2960608B2 (ja) * 1992-06-04 1999-10-12 キヤノン株式会社 液体噴射記録ヘッドの製造方法
FR2704074B1 (fr) * 1993-04-15 1995-06-02 France Telecom Procédé de réalisation d'une cellule d'affichage avec reprise de contre-électrode.
US5422514A (en) * 1993-05-11 1995-06-06 Micromodule Systems, Inc. Packaging and interconnect system for integrated circuits
US5459368A (en) * 1993-08-06 1995-10-17 Matsushita Electric Industrial Co., Ltd. Surface acoustic wave device mounted module
US5508558A (en) * 1993-10-28 1996-04-16 Digital Equipment Corporation High density, high speed, semiconductor interconnect using-multilayer flexible substrate with unsupported central portion
JPH07249877A (ja) * 1994-03-10 1995-09-26 Murata Mfg Co Ltd 電子部品
US5573171A (en) * 1995-02-16 1996-11-12 Trw Inc. Method of thin film patterning by reflow
US5640746A (en) * 1995-08-15 1997-06-24 Motorola, Inc. Method of hermetically encapsulating a crystal oscillator using a thermoplastic shell
DE19548048C2 (de) * 1995-12-21 1998-01-15 Siemens Matsushita Components Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement (OFW-Bauelement)
DE19548051A1 (de) * 1995-12-21 1997-06-26 Siemens Matsushita Components Elektronisches Bauelement insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement -
EP0794616B1 (en) * 1996-03-08 2003-01-29 Matsushita Electric Industrial Co., Ltd. An electronic part and a method of production thereof
WO1997045955A1 (de) * 1996-05-24 1997-12-04 Siemens Matsushita Components Gmbh & Co. Kg Elektronisches bauelement, insbesondere mit akustischen oberflächenwellen arbeitendes bauelement - ofw-bauelement
DE19623826C2 (de) * 1996-06-14 2000-06-15 Siemens Ag Verfahren zur Herstellung eines Trägerelements für Halbleiterchips
JPH1027971A (ja) * 1996-07-10 1998-01-27 Nec Corp 有機薄膜多層配線基板の切断方法
US5892417A (en) * 1996-12-27 1999-04-06 Motorola Inc. Saw device package and method
US6271598B1 (en) * 1997-07-29 2001-08-07 Cubic Memory, Inc. Conductive epoxy flip-chip on chip
JP3196693B2 (ja) * 1997-08-05 2001-08-06 日本電気株式会社 表面弾性波装置およびその製造方法
DE19806550B4 (de) * 1998-02-17 2004-07-22 Epcos Ag Elektronisches Bauelement, insbesondere mit akustischen Oberflächenwellen arbeitendes Bauelement - OFW-Bauelement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102079845A (zh) * 2009-11-19 2011-06-01 西门子公司 适用于浇铸电子元件、尤其是大型线圈如梯度线圈的灌注料
CN103928409A (zh) * 2014-03-17 2014-07-16 江苏省宜兴电子器件总厂 一种集成电路倒扣焊气密性封装结构
CN103928409B (zh) * 2014-03-17 2017-01-04 江苏省宜兴电子器件总厂 一种集成电路倒扣焊气密性封装结构
CN113302750A (zh) * 2019-01-18 2021-08-24 特里纳米克斯股份有限公司 光学传感器和用于光学检测的检测器

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US6519822B1 (en) 2003-02-18
KR20010042990A (ko) 2001-05-25
DE19818824B4 (de) 2008-07-31
CA2330039A1 (en) 1999-11-04
EP1078451A1 (de) 2001-02-28
DE19818824A1 (de) 1999-11-04
CN1127202C (zh) 2003-11-05

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