CN1127203C - 用于制造电子元件的方法 - Google Patents

用于制造电子元件的方法 Download PDF

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CN1127203C
CN1127203C CN99803133A CN99803133A CN1127203C CN 1127203 C CN1127203 C CN 1127203C CN 99803133 A CN99803133 A CN 99803133A CN 99803133 A CN99803133 A CN 99803133A CN 1127203 C CN1127203 C CN 1127203C
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substrate
chip
electronic component
manufacture method
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CN1291375A (zh
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A·斯特尔兹尔
H·克吕格尔
P·德默尔
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SnapTrack Inc
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Epcos AG
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Abstract

一种制造OFW滤波器的方法，其中，底板2内可分开的基板10在底板区域A均装有印刷线路，该印刷线路利用倒装技术与OFW芯片1的有源结构进行接触，然后，在配有芯片的基板10上镀敷一种金属或塑料膜3或4，并对该膜进行譬如压处理和热处理，使它包封住各个芯片1-除朝向基板10的芯片表面之外-，而且，该膜在各芯片之间的区域内气密地放置在基板表面上。

Description

用于制造电子元件的方法
技术领域
本发明涉及一种电子元件的制造方法，尤其涉及一种利用声表面波工作的OFW(表面波)元件的制造方法，该OFW元件具有一个芯片和一个帽状的外壳，该芯片带有压电基片以及一些与底板的印刷线路相接触的有源滤波结构，而该帽状外壳把芯片包封住，并紧密地安放在底板上。
背景技术
为了防止周围环境的干扰，尤其是防止化学侵蚀物质和湿度的损害作用，当有源滤波结构利用倒装技术、也即利用凸缘或焊球同陶瓷或塑料底板的印刷线路相接触时，在底板和芯片之间可放置一种多层结构(通常为两层)的保护膜，在申请人方面也称之为PROTEC膜。通过该膜的保护，OFW滤波器在倒装搭接之后可以利用浇注物(如环氧树脂)进行填装和重铸，这样，有源滤波结构不会被镀膜，表面波也不会由此造成不允许的衰减。为了覆盖敷在底板上的芯片，可采用一层处在B状态下的薄膜，即一层没有完全固化了的薄膜。
已经表明，在利用倒装技术进行接触的OFW滤波器的超高频通过区域，亦即典型地在芯片的尺寸小于约2×2mm2时，尽管底板和芯片之间的相应空间没被填充，但在温度负荷交变的情况下仍然具有足够的稳定性。
发明内容
该知识促使本发明有了如下任务：即提供一种方法，它可使OFW元件放弃较昂贵的PROTEC封装，并能取得极好的OFW元件。
为解决该任务，本发明对文章开头所述类型的方法进行了如下规定，即：底板内可分开的基板在其底板区域均装有印刷线路；利用倒装技术，芯片分别与底板区域的印刷线路进行接触；在配有芯片的基板上镀敷一种覆盖膜，尤其为金属膜，或有时为镀有金属的塑料膜；在处理覆盖膜时(如，热处理和压处理)，使它包封住各个芯片-除了朝向基板的芯片表面之外-，并在各芯片之间的区域内紧密地放置在基板表面上；将基板分隔成单个的OFW元件。作为基板可采用一个(最好是层间电路接通的、两侧敷有印刷线路的)陶瓷板或塑料板。覆盖薄膜在包封芯片之后可用塑料封装
附图说明
图1用部分断裂图的形式示出了本发明使用的基板的俯视图；
图2用部分剖面和断裂图的形式示出了根据本发明方法的、配有芯片的基板的第一种实施例侧视图；以及
图3同样用部分剖面的侧视图形式示出了根据本发明方法完成的OFW滤波器的第二种实施例。
在此，相同的部件用相同的参考符号表示。
具体实施方式
在首先讲述的方法中，沿底板2内的分隔线B-B’和C-C’可分开的-参看附图3-基板10(如陶瓷板或塑料板)在底板区域A内均装设了图中未示出的印刷线路，该印刷线路通常被穿越接通到背面的底板区。对此，在镀有印刷线路的同时，还根据底板的尺寸优选地给基板10涂上一种具有焊接能力的金属栅5，然后，在每个底板区域A内，芯片1利用倒装技术通过凸缘6和其印刷线路相接触。
最后，将一个具有合适厚度的覆盖膜镀敷在配有芯片的基板10上，这样它将芯片1紧密地包封-除了邻近基板10的芯片表面之外-其中覆盖膜近似地作为帽状外壳紧靠在芯片上，并且以前缘4a安放在基板10上。
假使膜与底板之间无需气密封闭，有时便可以采用一种用于电磁屏蔽的、镀有金属的覆盖膜4-见图3-作为覆盖膜来代替金属膜3，譬如，该膜4由一种B状态的粘合材料组成，或者在其朝向基板10的表面上涂上一层粘合剂。这种膜也可以再放到压热器内，即通常在真空中进行压处理和热处理，以气密地包住芯片。但是，由于塑料膜附近的金属栅5已成多余，所以覆盖膜4的前缘4a均可直接地安放在基板10或底板2之上。
已经证明，下述做法也是合适的，即：用作覆盖膜4的塑料膜根据由底板2确定的网栅尺寸预先被深拉成帽状，接着，该部分深拉的膜被罩在基板10的上方，然后通过前述方法，利用其位于基板10上的区域4a同基板紧密地连接起来。这种做法尤其对没有收缩性或缺乏收缩性的基板很有意义。
在应用技术中，这种产生的外壳-如图2中的划线(参看区域7)所示-可以通过循环加压或浇注(如利用环氧树脂)进行进一步地稳定化，而且另外还可以利用一种金属罩进行气密地密封。
在覆盖膜4的外表面及/或内表面上，另外还可镀有局部的由衰减物质组成的膜系列，对该膜系列进行调谐，使得在循环加压物质或作为塑料物质7的浇注物质的协助下，该膜系列能够衰减掉干扰的声体波。
填充的环氧树脂(如采用SiO2、W、WO3或Ag作为填充成分)尤其适合作为这种衰减物质。

Claims (11)

1.一种电子元件的制造方法，所述元件包括一个芯片(1)、一个底板和一个覆盖膜(4)，其中，
对于底板(2)内可分开的基板(10)，为所述基板在底板区域(A)内分别装设印刷线路，
利用倒装技术使芯片(1)在各个底板区域(A)与该印刷线路进行接触，
在配有芯片的基板(10)上镀敷一种覆盖膜(4)，
采用由B状态即没有完全固化的粘合材料组成的塑料膜作为覆盖膜(4)，
对覆盖膜(4)进行压处理和热处理，使得除了朝向基板(10)的芯片表面之外，该膜包封住各个芯片(1)，并在各芯片(1)之间的区域内贴在基板表面上，以及
将基板(10)分隔成单个的表面波元件。
2.根据权利要求1所述的电子元件的制造方法，
其中，覆盖膜(4)镀有金属膜。
3.根据权利要求1或2所述的电子元件的制造方法，
其中，镀敷一个覆盖膜(4)，在其朝向基板(10)的表面上涂有一层粘合剂。
4.根据权利要求1或2所述的电子元件的制造方法，
其中，覆盖膜根据由底板(2)确定的网栅尺寸预先被深拉成帽状，然后被罩在配有芯片的基板(10)的上方，并利用其位于基板(10)上的区域同基板(10)连接起来。
5.根据权利要求1所述的电子元件的制造方法，
其中，压处理和热处理在真空条件下产生。
6.根据权利要求1或2所述的电子元件的制造方法，
其中，采用陶瓷板或塑料板作为基板(10)。
7.根据权利要求6所述的电子元件的制造方法，
其中，采用一种穿越接通的、双面敷有印刷线路的陶瓷板或塑料板作为基板(10)。
8.根据权利要求1或2所述的电子元件的制造方法，
其中，覆盖膜在包封住芯片(1)之后，利用塑料(7)进行循环加压或浇注。
9.根据权利要求8所述的电子元件的制造方法，
其中，在覆盖膜(4)的外表面和/或内表面上镀有局部的、由衰减物质组成的膜系列，对该膜系列进行调谐，使得在循环加压物质或由塑料(7)组成的浇注物质的协助下，该膜系列能够衰减掉干扰的声体波。
10.根据权利要求9所述的电子元件的制造方法，
其中，采用填充的环氧树脂作为衰减物质。
11.根据权利要求10所述的电子元件的制造方法，
其中，采用利用SiO2、W、WO3或Ag填充的环氧树脂。
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