KR100571352B1 - 웨이퍼 이면연삭에 사용하기 위한 표면보호시트 및 그의 이용방법 - Google Patents
웨이퍼 이면연삭에 사용하기 위한 표면보호시트 및 그의 이용방법 Download PDFInfo
- Publication number
- KR100571352B1 KR100571352B1 KR1019990033887A KR19990033887A KR100571352B1 KR 100571352 B1 KR100571352 B1 KR 100571352B1 KR 1019990033887 A KR1019990033887 A KR 1019990033887A KR 19990033887 A KR19990033887 A KR 19990033887A KR 100571352 B1 KR100571352 B1 KR 100571352B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- sensitive adhesive
- pressure
- adhesive layer
- grinding
- Prior art date
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C11/00—Selection of abrasive materials or additives for abrasive blasts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
- C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
- C09J7/241—Polyolefin, e.g.rubber
- C09J7/243—Ethylene or propylene polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
- C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
- C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/006—Presence of polyolefin in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
- Y10T428/2809—Web or sheet containing structurally defined element or component and having an adhesive outermost layer including irradiated or wave energy treated component
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
Abstract
Description
점착제의 탄성률 (40℃)(Pa) | 전단박리력(kg/cm2) | 압축변형률(%) | 균열발생률(%) | |
실시예 1 | 1.07×105 | 10.8 | 4.4 | 0 |
실시예 2 | 1.10×105 | 12.8 | 4.1 | 0 |
실시예 3 | 1.48×105 | 13.5 | 3.6 | 0 |
실시예 4 | 4.55×108 | 33.7 | 3.2 | 0 |
실시예 5 | 6.71×106 | 11.5 | 3.5 | 0 |
비교예 1 | 2.00×104 | 7.9 | 6.2 | 7 |
비교예 2 | 8.66×104 | 9.6 | 5.5 | 0.2 |
비교예 3 | 1.78×104 | 6.5 | 7.2 | 9 |
Claims (9)
- 회로가 형성된 반도체 웨이퍼의 표면상에 웨이퍼의 두께보다 그루브의 절삭깊이가 얕도록 그루브를 형성하는 단계 및 웨이퍼의 두께를 얇게 하고 최종적으로는 웨이퍼를 개개의 칩으로 분할되도록 웨이퍼의 이면을 연삭하는 단계를 포함하는 공정 중에 웨이퍼 이면연삭에 사용되는 반도체 웨이퍼의 표면보호시트로서, 기재와 그 위에 형성된, 40℃에서 탄성률이 1.0×105Pa 이상이고, 압축변형률이 40kg/cm2에서 0.1 내지 5.0%인 점착제층을 포함하는 반도체 웨이퍼용 표면보호시트.
- 제1항에 있어서, 상기 점착제층이 에너지선 경화형 점착제로 되는 표면보호시트.
- 제1항 또는 제2항에 있어서, 점착제층의 전단박리력이 10kg/cm2 이상인 표면보호시트.
- 삭제
- 삭제
- 하기 단계를 포함하는 웨이퍼 이면연삭 방법:회로가 형성된 반도체 웨이퍼 표면상에, 그루브의 절삭깊이가 웨이퍼의 두께보다 얕도록 그루브를 형성하는 단계,반도체 회로가 형성된 웨이퍼 표면에 기재와 그 위에 형성된, 40℃에서 탄성률이 1.0×105Pa 이상이고, 압축변형률이 40kg/cm2에서 0.1 내지 5.0%인 점착제층을 포함하는 표면보호시트를 부착하는 단계, 및상기 웨이퍼의 두께를 얇게 하고, 최종적으로는 웨이퍼가 개개의 칩으로 분할되도록 웨이퍼의 이면을 연삭하는 단계.
- 제6항에 있어서, 점착제층을 에너지선 경화형 점착제로 하고, 표면보호시트를 반도체 회로가 형성된 웨이퍼 표면에 부착한 후, 40℃에서 점착제층의 탄성률이 1.0×105Pa 이상이 되도록 점착제층을 에너지선으로 조사하는 것을 특징으로 하는 웨이퍼 이면연삭 방법.
- 제7항에 있어서, 에너지선으로 조사한 점착제층의 전단박리력이 10kg/cm2 이상인 것을 특징으로 하는 웨이퍼 이면연삭 방법.
- 삭제
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1998-231602 | 1998-08-18 | ||
JP23160298A JP3410371B2 (ja) | 1998-08-18 | 1998-08-18 | ウエハ裏面研削時の表面保護シートおよびその利用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20000017349A KR20000017349A (ko) | 2000-03-25 |
KR100571352B1 true KR100571352B1 (ko) | 2006-04-14 |
Family
ID=16926093
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990033887A KR100571352B1 (ko) | 1998-08-18 | 1999-08-17 | 웨이퍼 이면연삭에 사용하기 위한 표면보호시트 및 그의 이용방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6465330B1 (ko) |
EP (1) | EP0981156B1 (ko) |
JP (1) | JP3410371B2 (ko) |
KR (1) | KR100571352B1 (ko) |
CN (1) | CN1145202C (ko) |
DE (1) | DE69918618T2 (ko) |
TW (1) | TW463254B (ko) |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7641966B2 (en) * | 1999-06-14 | 2010-01-05 | Nitto Denko Corporation | Re-release adhesive and re-release adhesive sheet |
JP4409014B2 (ja) * | 1999-11-30 | 2010-02-03 | リンテック株式会社 | 半導体装置の製造方法 |
JP4230080B2 (ja) * | 2000-02-18 | 2009-02-25 | リンテック株式会社 | ウエハ貼着用粘着シート |
US6900534B2 (en) * | 2000-03-16 | 2005-05-31 | Texas Instruments Incorporated | Direct attach chip scale package |
JP2001313350A (ja) * | 2000-04-28 | 2001-11-09 | Sony Corp | チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法 |
US6759121B2 (en) | 2000-07-13 | 2004-07-06 | 3M Innovative Properties Company | Clear adhesive sheet |
JP4707805B2 (ja) * | 2000-08-08 | 2011-06-22 | 三井化学株式会社 | 半導体ウエハ表面保護用粘着フィルム及びそれを用いる半導体ウエハ表面の保護方法 |
JP3906962B2 (ja) * | 2000-08-31 | 2007-04-18 | リンテック株式会社 | 半導体装置の製造方法 |
US7059942B2 (en) * | 2000-09-27 | 2006-06-13 | Strasbaugh | Method of backgrinding wafers while leaving backgrinding tape on a chuck |
US6730595B2 (en) * | 2000-12-12 | 2004-05-04 | Mitsui Chemicals, Inc. | Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used in said method |
JP3594581B2 (ja) * | 2000-12-12 | 2004-12-02 | 三井化学株式会社 | 半導体ウェハ保護方法及び該保護方法に用いる半導体ウェハ表面保護用粘着フィルム |
DE10121556A1 (de) * | 2001-05-03 | 2002-11-14 | Infineon Technologies Ag | Verfahren zum Rückseitenschleifen von Wafern |
JP4689075B2 (ja) * | 2001-05-21 | 2011-05-25 | 日東電工株式会社 | 半導体ウエハ加工用保護シート |
JP2002343756A (ja) * | 2001-05-21 | 2002-11-29 | Tokyo Seimitsu Co Ltd | ウェーハ平面加工装置 |
JP2002348554A (ja) * | 2001-05-24 | 2002-12-04 | Lintec Corp | ワーク固定用シートおよびワーク加工方法 |
US6794751B2 (en) * | 2001-06-29 | 2004-09-21 | Intel Corporation | Multi-purpose planarizing/back-grind/pre-underfill arrangements for bumped wafers and dies |
CN1264940C (zh) * | 2001-08-10 | 2006-07-19 | 日东电工株式会社 | 切割用胶粘薄膜及切割方法 |
JP2005504445A (ja) * | 2001-10-01 | 2005-02-10 | エグシル テクノロジー リミテッド | 基板、特に半導体ウェハの加工 |
JP2003147300A (ja) * | 2001-11-12 | 2003-05-21 | Lintec Corp | ウエハ裏面研削時の表面保護シートおよび半導体チップの製造方法 |
US6869830B2 (en) | 2001-12-03 | 2005-03-22 | Disco Corporation | Method of processing a semiconductor wafer |
CN1322554C (zh) * | 2002-01-15 | 2007-06-20 | 积水化学工业株式会社 | Ic片的生产方法 |
WO2003077295A1 (en) | 2002-03-12 | 2003-09-18 | Hamamatsu Photonics K.K. | Method for dicing substrate |
JPWO2003083002A1 (ja) | 2002-03-28 | 2005-08-04 | 三井化学株式会社 | 半導体ウェハ表面保護用粘着フィルム及び該粘着フィルムを用いる半導体ウェハの保護方法 |
JP2003298006A (ja) * | 2002-03-29 | 2003-10-17 | Seiko Epson Corp | 半導体装置および電気光学装置 |
JP2004047823A (ja) * | 2002-07-12 | 2004-02-12 | Tokyo Seimitsu Co Ltd | ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム |
EP1391493A1 (en) * | 2002-08-22 | 2004-02-25 | Lintec Corporation | Surface protecting film for polycarbonate |
US7482249B2 (en) | 2002-11-29 | 2009-01-27 | Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. | Method and device for machining a wafer, in addition to a wafer comprising a separation layer and a support layer |
DE10256247A1 (de) * | 2002-11-29 | 2004-06-09 | Andreas Jakob | Schichtverbund aus einer Trennschicht und einer Schutzschicht zum Schutze und zum Handling eines Wafers beim Dünnen, bei der Rückseitenbeschichtung und beim Vereinzeln |
JP4153325B2 (ja) * | 2003-02-13 | 2008-09-24 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
TWI240965B (en) * | 2003-02-28 | 2005-10-01 | Toshiba Corp | Semiconductor wafer dividing method and apparatus |
JP2004311576A (ja) * | 2003-04-03 | 2004-11-04 | Toshiba Corp | 半導体装置の製造方法 |
JP2004319045A (ja) * | 2003-04-18 | 2004-11-11 | Lintec Corp | 光ディスク製造用シートおよび光ディスク |
JP2004349649A (ja) * | 2003-05-26 | 2004-12-09 | Shinko Electric Ind Co Ltd | ウエハーの薄加工方法 |
US20050023682A1 (en) * | 2003-07-31 | 2005-02-03 | Morio Nakao | High reliability chip scale package |
US20050147489A1 (en) * | 2003-12-24 | 2005-07-07 | Tian-An Chen | Wafer supporting system for semiconductor wafers |
JP4439990B2 (ja) * | 2004-04-28 | 2010-03-24 | 株式会社ディスコ | レーザー加工方法 |
JP4878738B2 (ja) * | 2004-04-30 | 2012-02-15 | 株式会社ディスコ | 半導体デバイスの加工方法 |
JP4574234B2 (ja) | 2004-06-02 | 2010-11-04 | リンテック株式会社 | 半導体加工用粘着シートおよび半導体チップの製造方法 |
US7576412B2 (en) * | 2004-07-26 | 2009-08-18 | Nxp B.V. | Wafer with improved sawing loops |
JP2007123687A (ja) * | 2005-10-31 | 2007-05-17 | Tokyo Seimitsu Co Ltd | 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置 |
DE102005055769A1 (de) * | 2005-11-21 | 2007-05-24 | Tesa Ag | Verfahren zur temporären Fixierung eines polymeren Schichtmaterials auf rauen Oberflächen |
KR101447298B1 (ko) * | 2006-01-13 | 2014-10-06 | 덴끼 가가꾸 고교 가부시키가이샤 | 경화성 수지 조성물, 표면 보호 방법, 가고정 방법 및 박리방법 |
US7935424B2 (en) * | 2006-04-06 | 2011-05-03 | Lintec Corporation | Adhesive sheet |
DE102006026467B4 (de) * | 2006-06-07 | 2018-06-28 | Texas Instruments Deutschland Gmbh | Vorrichtung für das Schleifen eines Wafers |
JP5275553B2 (ja) * | 2006-06-27 | 2013-08-28 | スリーエム イノベイティブ プロパティズ カンパニー | 分割チップの製造方法 |
JP2008031447A (ja) * | 2006-06-29 | 2008-02-14 | Dainippon Printing Co Ltd | 電磁波遮蔽シート仮積層用保護フィルム及びその製造方法、並びに電磁波遮蔽シート |
JP2008060151A (ja) * | 2006-08-29 | 2008-03-13 | Nitto Denko Corp | 半導体ウエハ裏面加工方法、基板裏面加工方法、及び放射線硬化型粘着シート |
JP5049620B2 (ja) * | 2007-03-20 | 2012-10-17 | リンテック株式会社 | 粘着シート |
SG148884A1 (en) * | 2007-06-15 | 2009-01-29 | Micron Technology Inc | Method and system for removing tape from substrates |
JP5032231B2 (ja) * | 2007-07-23 | 2012-09-26 | リンテック株式会社 | 半導体装置の製造方法 |
FR2921201B1 (fr) * | 2007-09-19 | 2009-12-18 | Commissariat Energie Atomique | Procede de collage de puces sur un substrat de contrainte et procede de mise sous contrainte d'un circuit de lecture semi-conducteur |
US7829384B2 (en) * | 2007-09-25 | 2010-11-09 | Stats Chippac, Ltd. | Semiconductor device and method of laser-marking wafers with tape applied to its active surface |
US8916416B2 (en) * | 2007-09-25 | 2014-12-23 | Stats Chippac, Ltd. | Semiconductor device and method of laser-marking laminate layer formed over eWLB with tape applied to opposite surface |
WO2009048061A1 (ja) * | 2007-10-09 | 2009-04-16 | Hitachi Chemical Company, Ltd. | 接着フィルム付き半導体チップの製造方法及びこの製造方法に用いられる半導体用接着フィルム、並びに、半導体装置の製造方法 |
JP2009094432A (ja) * | 2007-10-12 | 2009-04-30 | Toshiba Corp | 積層型半導体パッケージの製造方法 |
KR101454183B1 (ko) * | 2007-11-12 | 2014-10-27 | 린텍 코포레이션 | 점착 시트 |
JP5448337B2 (ja) * | 2007-12-21 | 2014-03-19 | 株式会社東京精密 | ウェーハ研削装置およびウェーハ研削方法 |
JP5867921B2 (ja) | 2008-05-14 | 2016-02-24 | エルジー・ケム・リミテッド | 粘着シート及びこれを利用した半導体ウェーハ裏面研削方法 |
US7919348B2 (en) * | 2008-06-13 | 2011-04-05 | Aptina Imaging Corporation | Methods for protecting imaging elements of photoimagers during back side processing |
CN105047597B (zh) | 2009-06-15 | 2018-04-03 | 日东电工株式会社 | 半导体背面用切割带集成膜 |
JP2011168751A (ja) | 2010-02-22 | 2011-09-01 | Nitto Denko Corp | 表面保護フィルム |
JP5993845B2 (ja) | 2010-06-08 | 2016-09-14 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 先ダイシング法を行う微細加工されたウェーハへの接着剤の被覆 |
JP5580701B2 (ja) | 2010-09-13 | 2014-08-27 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
TWI461501B (zh) * | 2010-12-20 | 2014-11-21 | Henkel IP & Holding GmbH | 光可固化切割黏晶膠帶 |
EP2671248A4 (en) * | 2011-02-01 | 2015-10-07 | Henkel Corp | ON A PRECUTED WAFER APPLIED FILM ON A DICING TAPE |
EP2671249A4 (en) * | 2011-02-01 | 2015-10-07 | Henkel IP & Holding GmbH | FILLING FILM APPLIED TO A PRE-CUTTING WAFER |
WO2014020390A1 (en) * | 2012-07-31 | 2014-02-06 | Soitec | Methods for fabrication of semiconductor structures using laser lift-off process, and related semiconductor structures |
JP6026222B2 (ja) * | 2012-10-23 | 2016-11-16 | 株式会社ディスコ | ウエーハの加工方法 |
JP6129541B2 (ja) * | 2012-12-17 | 2017-05-17 | リンテック株式会社 | ダイシングシート |
KR101643184B1 (ko) * | 2013-08-28 | 2016-07-27 | 후지모리 고교 가부시키가이샤 | 화학 연마용 표면 보호 필름 |
JP6542502B2 (ja) * | 2013-11-15 | 2019-07-10 | 三井化学株式会社 | 拡張性基材フィルム、ダイシングフィルム、半導体用表面保護フィルム、及び半導体装置の製造方法 |
JP6193813B2 (ja) * | 2014-06-10 | 2017-09-06 | 信越化学工業株式会社 | ウエハ加工用仮接着材料、ウエハ加工体及びこれらを使用する薄型ウエハの製造方法 |
JP6610510B2 (ja) * | 2015-11-26 | 2019-11-27 | 信越化学工業株式会社 | ウエハ積層体及びその製造方法 |
CN108603086A (zh) * | 2016-02-29 | 2018-09-28 | 株式会社E-Tec | 粘着剂组合物及粘着片 |
GB2551732B (en) * | 2016-06-28 | 2020-05-27 | Disco Corp | Method of processing wafer |
JP6928850B2 (ja) * | 2016-08-29 | 2021-09-01 | 古河電気工業株式会社 | マスク一体型表面保護テープ |
JP6870974B2 (ja) | 2016-12-08 | 2021-05-12 | 株式会社ディスコ | 被加工物の分割方法 |
CN106847846A (zh) * | 2016-12-23 | 2017-06-13 | 江苏正桥影像科技股份有限公司 | 一种超薄图像传感器晶片的磨制方法 |
JP6938212B2 (ja) * | 2017-05-11 | 2021-09-22 | 株式会社ディスコ | 加工方法 |
CN109290875B (zh) | 2017-07-25 | 2021-06-22 | 北京通美晶体技术股份有限公司 | 背面有凹坑的磷化铟晶片、制法和制备其的腐蚀液 |
JP2018076517A (ja) * | 2017-12-01 | 2018-05-17 | 三井化学株式会社 | ダイシングフィルム、半導体用表面保護フィルム、及び半導体装置の製造方法 |
JP7311284B2 (ja) * | 2019-03-22 | 2023-07-19 | 日東電工株式会社 | バックグラインドテープ |
JP2020186313A (ja) * | 2019-05-14 | 2020-11-19 | 積水化学工業株式会社 | 半導体加工用粘着テープ |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997000534A1 (fr) * | 1995-06-15 | 1997-01-03 | Nitto Denko Corporation | Procede d'elimination d'un agent photoresistant, et adhesif ou feuille adhesive utilises a cet effet |
KR0157508B1 (ko) * | 1995-08-01 | 1998-10-01 | 백운화 | 피클향미를 가미한 김치의 제조방법 및 이의 제품 |
US9700534B2 (en) * | 2007-08-01 | 2017-07-11 | University of Pittsburgh—of the Commonwealth System of Higher Education | Nitrated-fatty acids modulation of type II diabetes |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5552235A (en) * | 1978-10-13 | 1980-04-16 | Toshiba Corp | Fastening of semiconductor wafer on substrate |
JPH0616524B2 (ja) | 1984-03-12 | 1994-03-02 | 日東電工株式会社 | 半導体ウエハ固定用接着薄板 |
US5714029A (en) | 1984-03-12 | 1998-02-03 | Nitto Electric Industrial Co., Ltd. | Process for working a semiconductor wafer |
JPS60223139A (ja) | 1984-04-18 | 1985-11-07 | Nitto Electric Ind Co Ltd | 半導体ウエハ固定用接着薄板 |
DE3639266A1 (de) | 1985-12-27 | 1987-07-02 | Fsk K K | Haftfolie |
US4859217A (en) | 1987-06-30 | 1989-08-22 | Uop | Process for separating nitrogen from mixtures thereof with less polar substances |
JP2601956B2 (ja) | 1991-07-31 | 1997-04-23 | リンテック株式会社 | 再剥離型粘着性ポリマー |
JPH0574934A (ja) * | 1991-09-13 | 1993-03-26 | Sony Corp | 薄型チツプの形成方法 |
JPH05335411A (ja) | 1992-06-02 | 1993-12-17 | Toshiba Corp | ペレットの製造方法 |
JP3410202B2 (ja) | 1993-04-28 | 2003-05-26 | 日本テキサス・インスツルメンツ株式会社 | ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法 |
JP2984549B2 (ja) | 1994-07-12 | 1999-11-29 | リンテック株式会社 | エネルギー線硬化型感圧粘着剤組成物およびその利用方法 |
JPH09291258A (ja) * | 1996-04-26 | 1997-11-11 | Lintec Corp | 粘着剤組成物およびこれを用いた粘着シート |
US6312800B1 (en) * | 1997-02-10 | 2001-11-06 | Lintec Corporation | Pressure sensitive adhesive sheet for producing a chip |
JPH1140520A (ja) * | 1997-07-23 | 1999-02-12 | Toshiba Corp | ウェーハの分割方法及び半導体装置の製造方法 |
EP0926732A3 (en) * | 1997-12-10 | 2001-01-03 | Nitto Denko Corporation | Process for producing semiconductor device and pressure-sensitive adhesive sheet for surface protection |
JP3739570B2 (ja) * | 1998-06-02 | 2006-01-25 | リンテック株式会社 | 粘着シートおよびその利用方法 |
-
1998
- 1998-08-18 JP JP23160298A patent/JP3410371B2/ja not_active Expired - Lifetime
-
1999
- 1999-08-17 KR KR1019990033887A patent/KR100571352B1/ko not_active IP Right Cessation
- 1999-08-17 DE DE69918618T patent/DE69918618T2/de not_active Expired - Lifetime
- 1999-08-17 EP EP99306494A patent/EP0981156B1/en not_active Expired - Lifetime
- 1999-08-17 TW TW088113999A patent/TW463254B/zh not_active IP Right Cessation
- 1999-08-18 US US09/387,705 patent/US6465330B1/en not_active Expired - Lifetime
- 1999-08-18 CN CNB991181018A patent/CN1145202C/zh not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997000534A1 (fr) * | 1995-06-15 | 1997-01-03 | Nitto Denko Corporation | Procede d'elimination d'un agent photoresistant, et adhesif ou feuille adhesive utilises a cet effet |
KR0157508B1 (ko) * | 1995-08-01 | 1998-10-01 | 백운화 | 피클향미를 가미한 김치의 제조방법 및 이의 제품 |
US9700534B2 (en) * | 2007-08-01 | 2017-07-11 | University of Pittsburgh—of the Commonwealth System of Higher Education | Nitrated-fatty acids modulation of type II diabetes |
Non-Patent Citations (2)
Title |
---|
0157508 |
9700534 |
Also Published As
Publication number | Publication date |
---|---|
EP0981156B1 (en) | 2004-07-14 |
JP3410371B2 (ja) | 2003-05-26 |
EP0981156A2 (en) | 2000-02-23 |
TW463254B (en) | 2001-11-11 |
US6465330B1 (en) | 2002-10-15 |
KR20000017349A (ko) | 2000-03-25 |
DE69918618D1 (de) | 2004-08-19 |
CN1247382A (zh) | 2000-03-15 |
JP2000068237A (ja) | 2000-03-03 |
EP0981156A3 (en) | 2002-01-09 |
CN1145202C (zh) | 2004-04-07 |
DE69918618T2 (de) | 2005-08-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100571352B1 (ko) | 웨이퍼 이면연삭에 사용하기 위한 표면보호시트 및 그의 이용방법 | |
KR100655036B1 (ko) | 양면점착시트 및 그 사용 방법 | |
KR100584026B1 (ko) | 점착시트 및 그의 사용 방법 | |
JP3383227B2 (ja) | 半導体ウエハの裏面研削方法 | |
JP5302951B2 (ja) | 粘着シート | |
US7351645B2 (en) | Pressure sensitive adhesive sheet for use in semiconductor working and method for producing semiconductor chip | |
KR100705149B1 (ko) | 반도체 웨이퍼의 제조방법 | |
EP1070347B1 (en) | Semiconductor wafer processing tapes | |
EP1883106A2 (en) | Method for working object to be worked | |
KR100661207B1 (ko) | 반도체 칩의 제조방법 | |
JP6169067B2 (ja) | 電子部品加工用粘着テープ | |
US7105226B2 (en) | Pressure sensitive adhesive double coated sheet and method of use thereof | |
JP4841802B2 (ja) | 粘着シートおよびその使用方法 | |
JP2000212530A (ja) | 粘着シ―トおよびその使用方法 | |
JP2002141309A (ja) | ダイシングシートおよびその使用方法 | |
CN107078038B (zh) | 切割片、切割片的制造方法与模具芯片的制造方法 | |
JP2003129011A (ja) | 半導体ウエハ加工用粘着シート | |
WO2019155970A1 (ja) | 半導体加工用粘着テープ | |
JP4180557B2 (ja) | 両面粘着シート |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130321 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140319 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160318 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170322 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180329 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20190328 Year of fee payment: 14 |
|
EXPY | Expiration of term |