DE69918618D1 - Haftklebefolie zum Oberflächenschutz beim Schleifen der Rückseite eines Halbleiterplättchens und Verfahren zur Verwendung derselben - Google Patents

Haftklebefolie zum Oberflächenschutz beim Schleifen der Rückseite eines Halbleiterplättchens und Verfahren zur Verwendung derselben

Info

Publication number
DE69918618D1
DE69918618D1 DE69918618T DE69918618T DE69918618D1 DE 69918618 D1 DE69918618 D1 DE 69918618D1 DE 69918618 T DE69918618 T DE 69918618T DE 69918618 T DE69918618 T DE 69918618T DE 69918618 D1 DE69918618 D1 DE 69918618D1
Authority
DE
Germany
Prior art keywords
grinding
sensitive adhesive
semiconductor wafer
same
pressure sensitive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69918618T
Other languages
English (en)
Other versions
DE69918618T2 (de
Inventor
Kazuhiro Takahashi
Kazuyoshi Ebe
Shinya Takyu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lintec Corp
Original Assignee
Toshiba Corp
Lintec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Lintec Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69918618D1 publication Critical patent/DE69918618D1/de
Publication of DE69918618T2 publication Critical patent/DE69918618T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C11/00—Selection of abrasive materials or additives for abrasive blasts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/24—Plastics; Metallised plastics based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/241—Polyolefin, e.g.rubber
    • C09J7/243—Ethylene or propylene polymers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/10—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet
    • C09J2301/12—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers
    • C09J2301/122—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive tape or sheet by the arrangement of layers the adhesive layer being present only on one side of the carrier, e.g. single-sided adhesive tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/302—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being pressure-sensitive, i.e. tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00—Presence of polyolefin
    • C09J2423/006—Presence of polyolefin in the substrate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2433/00—Presence of (meth)acrylic polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/28—Web or sheet containing structurally defined element or component and having an adhesive outermost layer
    • Y10T428/2809—Web or sheet containing structurally defined element or component and having an adhesive outermost layer including irradiated or wave energy treated component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
DE69918618T 1998-08-18 1999-08-17 Haftklebefolie zum Oberflächenschutz beim Schleifen der Rückseite eines Halbleiterplättchens und Verfahren zur Verwendung derselben Expired - Lifetime DE69918618T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23160298 1998-08-18
JP23160298A JP3410371B2 (ja) 1998-08-18 1998-08-18 ウエハ裏面研削時の表面保護シートおよびその利用方法

Publications (2)

Publication Number Publication Date
DE69918618D1 true DE69918618D1 (de) 2004-08-19
DE69918618T2 DE69918618T2 (de) 2005-08-25

Family

ID=16926093

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69918618T Expired - Lifetime DE69918618T2 (de) 1998-08-18 1999-08-17 Haftklebefolie zum Oberflächenschutz beim Schleifen der Rückseite eines Halbleiterplättchens und Verfahren zur Verwendung derselben

Country Status (7)

Country Link
US (1) US6465330B1 (de)
EP (1) EP0981156B1 (de)
JP (1) JP3410371B2 (de)
KR (1) KR100571352B1 (de)
CN (1) CN1145202C (de)
DE (1) DE69918618T2 (de)
TW (1) TW463254B (de)

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7641966B2 (en) * 1999-06-14 2010-01-05 Nitto Denko Corporation Re-release adhesive and re-release adhesive sheet
JP4409014B2 (ja) * 1999-11-30 2010-02-03 リンテック株式会社 半導体装置の製造方法
JP4230080B2 (ja) * 2000-02-18 2009-02-25 リンテック株式会社 ウエハ貼着用粘着シート
US6900534B2 (en) * 2000-03-16 2005-05-31 Texas Instruments Incorporated Direct attach chip scale package
JP2001313350A (ja) * 2000-04-28 2001-11-09 Sony Corp チップ状電子部品及びその製造方法、並びにその製造に用いる疑似ウエーハ及びその製造方法
US6759121B2 (en) * 2000-07-13 2004-07-06 3M Innovative Properties Company Clear adhesive sheet
JP4707805B2 (ja) * 2000-08-08 2011-06-22 三井化学株式会社 半導体ウエハ表面保護用粘着フィルム及びそれを用いる半導体ウエハ表面の保護方法
JP3906962B2 (ja) * 2000-08-31 2007-04-18 リンテック株式会社 半導体装置の製造方法
US7059942B2 (en) * 2000-09-27 2006-06-13 Strasbaugh Method of backgrinding wafers while leaving backgrinding tape on a chuck
JP3594581B2 (ja) * 2000-12-12 2004-12-02 三井化学株式会社 半導体ウェハ保護方法及び該保護方法に用いる半導体ウェハ表面保護用粘着フィルム
US6730595B2 (en) * 2000-12-12 2004-05-04 Mitsui Chemicals, Inc. Protecting method for semiconductor wafer and surface protecting adhesive film for semiconductor wafer used in said method
DE10121556A1 (de) * 2001-05-03 2002-11-14 Infineon Technologies Ag Verfahren zum Rückseitenschleifen von Wafern
JP4689075B2 (ja) * 2001-05-21 2011-05-25 日東電工株式会社 半導体ウエハ加工用保護シート
JP2002343756A (ja) * 2001-05-21 2002-11-29 Tokyo Seimitsu Co Ltd ウェーハ平面加工装置
JP2002348554A (ja) * 2001-05-24 2002-12-04 Lintec Corp ワーク固定用シートおよびワーク加工方法
US6794751B2 (en) * 2001-06-29 2004-09-21 Intel Corporation Multi-purpose planarizing/back-grind/pre-underfill arrangements for bumped wafers and dies
EP1424377A4 (de) * 2001-08-10 2005-03-23 Nitto Denko Corp Dicing-klebefolie und dicing-verfahren
CN100369235C (zh) * 2001-10-01 2008-02-13 埃克赛尔技术有限公司 加工衬底的方法及系统
JP2003147300A (ja) * 2001-11-12 2003-05-21 Lintec Corp ウエハ裏面研削時の表面保護シートおよび半導体チップの製造方法
SG120887A1 (en) * 2001-12-03 2006-04-26 Disco Corp Method of processing a semiconductor wafer and substrate for semiconductor wafers used in the same
CN1322554C (zh) * 2002-01-15 2007-06-20 积水化学工业株式会社 Ic片的生产方法
ATE518242T1 (de) 2002-03-12 2011-08-15 Hamamatsu Photonics Kk Methode zur trennung von substraten
US7238421B2 (en) 2002-03-28 2007-07-03 Mitsui Chemicals, Inc. Pressure sensitive adhesive film for protection of semiconductor wafer surface and method of protecting semiconductor wafer with the pressure sensitive adhesive film
JP2003298006A (ja) * 2002-03-29 2003-10-17 Seiko Epson Corp 半導体装置および電気光学装置
JP2004047823A (ja) * 2002-07-12 2004-02-12 Tokyo Seimitsu Co Ltd ダイシングテープ貼付装置およびバックグラインド・ダイシングテープ貼付システム
EP1391493A1 (de) * 2002-08-22 2004-02-25 Lintec Corporation Film zum Oberflächenschutz von Polycarbonat
EP1568071B1 (de) * 2002-11-29 2019-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Wafer mit trennschicht und trägerschicht und dessen herstellungsverfahren
DE10256247A1 (de) * 2002-11-29 2004-06-09 Andreas Jakob Schichtverbund aus einer Trennschicht und einer Schutzschicht zum Schutze und zum Handling eines Wafers beim Dünnen, bei der Rückseitenbeschichtung und beim Vereinzeln
JP4153325B2 (ja) * 2003-02-13 2008-09-24 株式会社ディスコ 半導体ウエーハの加工方法
TWI240965B (en) * 2003-02-28 2005-10-01 Toshiba Corp Semiconductor wafer dividing method and apparatus
JP2004311576A (ja) * 2003-04-03 2004-11-04 Toshiba Corp 半導体装置の製造方法
JP2004319045A (ja) * 2003-04-18 2004-11-11 Lintec Corp 光ディスク製造用シートおよび光ディスク
JP2004349649A (ja) * 2003-05-26 2004-12-09 Shinko Electric Ind Co Ltd ウエハーの薄加工方法
US20050023682A1 (en) * 2003-07-31 2005-02-03 Morio Nakao High reliability chip scale package
US20050147489A1 (en) * 2003-12-24 2005-07-07 Tian-An Chen Wafer supporting system for semiconductor wafers
JP4439990B2 (ja) * 2004-04-28 2010-03-24 株式会社ディスコ レーザー加工方法
JP4878738B2 (ja) * 2004-04-30 2012-02-15 株式会社ディスコ 半導体デバイスの加工方法
JP4574234B2 (ja) 2004-06-02 2010-11-04 リンテック株式会社 半導体加工用粘着シートおよび半導体チップの製造方法
EP1774587B1 (de) * 2004-07-26 2009-10-07 Nxp B.V. Wafer mit verbesserten leitenden schleifen im ritzrahmen
JP2007123687A (ja) * 2005-10-31 2007-05-17 Tokyo Seimitsu Co Ltd 半導体ウェーハ裏面の研削方法及び半導体ウェーハ研削装置
DE102005055769A1 (de) * 2005-11-21 2007-05-24 Tesa Ag Verfahren zur temporären Fixierung eines polymeren Schichtmaterials auf rauen Oberflächen
WO2007080936A1 (ja) * 2006-01-13 2007-07-19 Denki Kagaku Kogyo Kabushiki Kaisha 硬化性樹脂組成物、表面保護方法、仮固定方法、及び剥離方法
US7935424B2 (en) 2006-04-06 2011-05-03 Lintec Corporation Adhesive sheet
DE102006026467B4 (de) * 2006-06-07 2018-06-28 Texas Instruments Deutschland Gmbh Vorrichtung für das Schleifen eines Wafers
JP5275553B2 (ja) * 2006-06-27 2013-08-28 スリーエム イノベイティブ プロパティズ カンパニー 分割チップの製造方法
JP2008031447A (ja) * 2006-06-29 2008-02-14 Dainippon Printing Co Ltd 電磁波遮蔽シート仮積層用保護フィルム及びその製造方法、並びに電磁波遮蔽シート
JP2008060151A (ja) * 2006-08-29 2008-03-13 Nitto Denko Corp 半導体ウエハ裏面加工方法、基板裏面加工方法、及び放射線硬化型粘着シート
JP5049620B2 (ja) * 2007-03-20 2012-10-17 リンテック株式会社 粘着シート
SG148884A1 (en) * 2007-06-15 2009-01-29 Micron Technology Inc Method and system for removing tape from substrates
JP5032231B2 (ja) * 2007-07-23 2012-09-26 リンテック株式会社 半導体装置の製造方法
FR2921201B1 (fr) * 2007-09-19 2009-12-18 Commissariat Energie Atomique Procede de collage de puces sur un substrat de contrainte et procede de mise sous contrainte d'un circuit de lecture semi-conducteur
US7829384B2 (en) * 2007-09-25 2010-11-09 Stats Chippac, Ltd. Semiconductor device and method of laser-marking wafers with tape applied to its active surface
US8916416B2 (en) * 2007-09-25 2014-12-23 Stats Chippac, Ltd. Semiconductor device and method of laser-marking laminate layer formed over eWLB with tape applied to opposite surface
US8198176B2 (en) * 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
JP2009094432A (ja) * 2007-10-12 2009-04-30 Toshiba Corp 積層型半導体パッケージの製造方法
US20090123746A1 (en) * 2007-11-12 2009-05-14 Lintec Corporation Adhesive sheet
JP5448337B2 (ja) * 2007-12-21 2014-03-19 株式会社東京精密 ウェーハ研削装置およびウェーハ研削方法
US20110139347A1 (en) 2008-05-14 2011-06-16 Lg Chem Ltd. Adhesive composition, adhesive sheet, and back grinding method for semiconductor wafer
US7919348B2 (en) * 2008-06-13 2011-04-05 Aptina Imaging Corporation Methods for protecting imaging elements of photoimagers during back side processing
CN105047597B (zh) 2009-06-15 2018-04-03 日东电工株式会社 半导体背面用切割带集成膜
JP2011168751A (ja) 2010-02-22 2011-09-01 Nitto Denko Corp 表面保護フィルム
JP5993845B2 (ja) 2010-06-08 2016-09-14 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング 先ダイシング法を行う微細加工されたウェーハへの接着剤の被覆
JP5580701B2 (ja) * 2010-09-13 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム
TWI461501B (zh) * 2010-12-20 2014-11-21 Henkel IP & Holding GmbH 光可固化切割黏晶膠帶
KR101997293B1 (ko) * 2011-02-01 2019-07-05 헨켈 아이피 앤드 홀딩 게엠베하 다이싱 테이프 상에 사전 절단 웨이퍼가 도포된 언더필 필름
KR101960982B1 (ko) * 2011-02-01 2019-07-15 헨켈 아이피 앤드 홀딩 게엠베하 사전 절단되어 웨이퍼상에 도포된 언더필 필름
CN104508815B (zh) * 2012-07-31 2018-02-13 索泰克公司 使用激光剥离过程制造半导体结构的方法和相关的半导体结构
JP6026222B2 (ja) * 2012-10-23 2016-11-16 株式会社ディスコ ウエーハの加工方法
JP6129541B2 (ja) * 2012-12-17 2017-05-17 リンテック株式会社 ダイシングシート
KR101643184B1 (ko) * 2013-08-28 2016-07-27 후지모리 고교 가부시키가이샤 화학 연마용 표면 보호 필름
JP6542502B2 (ja) * 2013-11-15 2019-07-10 三井化学株式会社 拡張性基材フィルム、ダイシングフィルム、半導体用表面保護フィルム、及び半導体装置の製造方法
JP6193813B2 (ja) * 2014-06-10 2017-09-06 信越化学工業株式会社 ウエハ加工用仮接着材料、ウエハ加工体及びこれらを使用する薄型ウエハの製造方法
JP6610510B2 (ja) * 2015-11-26 2019-11-27 信越化学工業株式会社 ウエハ積層体及びその製造方法
JPWO2017149981A1 (ja) * 2016-02-29 2018-12-20 株式会社イーテック 粘着剤組成物及び粘着シート
GB2551732B (en) 2016-06-28 2020-05-27 Disco Corp Method of processing wafer
WO2018043391A1 (ja) * 2016-08-29 2018-03-08 古河電気工業株式会社 マスク一体型表面保護テープ
JP6870974B2 (ja) 2016-12-08 2021-05-12 株式会社ディスコ 被加工物の分割方法
CN106847846A (zh) * 2016-12-23 2017-06-13 江苏正桥影像科技股份有限公司 一种超薄图像传感器晶片的磨制方法
JP6938212B2 (ja) * 2017-05-11 2021-09-22 株式会社ディスコ 加工方法
CN109290875B (zh) * 2017-07-25 2021-06-22 北京通美晶体技术股份有限公司 背面有凹坑的磷化铟晶片、制法和制备其的腐蚀液
JP2018076517A (ja) * 2017-12-01 2018-05-17 三井化学株式会社 ダイシングフィルム、半導体用表面保護フィルム、及び半導体装置の製造方法
JP7311284B2 (ja) * 2019-03-22 2023-07-19 日東電工株式会社 バックグラインドテープ
JP2020186313A (ja) * 2019-05-14 2020-11-19 積水化学工業株式会社 半導体加工用粘着テープ

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5552235A (en) * 1978-10-13 1980-04-16 Toshiba Corp Fastening of semiconductor wafer on substrate
US5714029A (en) 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
JPH0616524B2 (ja) * 1984-03-12 1994-03-02 日東電工株式会社 半導体ウエハ固定用接着薄板
JPS60223139A (ja) 1984-04-18 1985-11-07 Nitto Electric Ind Co Ltd 半導体ウエハ固定用接着薄板
DE3639266A1 (de) 1985-12-27 1987-07-02 Fsk K K Haftfolie
US4859217A (en) 1987-06-30 1989-08-22 Uop Process for separating nitrogen from mixtures thereof with less polar substances
JP2601956B2 (ja) 1991-07-31 1997-04-23 リンテック株式会社 再剥離型粘着性ポリマー
JPH0574934A (ja) * 1991-09-13 1993-03-26 Sony Corp 薄型チツプの形成方法
JPH05335411A (ja) 1992-06-02 1993-12-17 Toshiba Corp ペレットの製造方法
JP3410202B2 (ja) 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 ウェハ貼着用粘着シートおよびこれを用いた半導体装置の製造方法
JP2984549B2 (ja) 1994-07-12 1999-11-29 リンテック株式会社 エネルギー線硬化型感圧粘着剤組成物およびその利用方法
WO1997000534A1 (fr) * 1995-06-15 1997-01-03 Nitto Denko Corporation Procede d'elimination d'un agent photoresistant, et adhesif ou feuille adhesive utilises a cet effet
KR0157508B1 (ko) * 1995-08-01 1998-10-01 백운화 피클향미를 가미한 김치의 제조방법 및 이의 제품
JPH09291258A (ja) * 1996-04-26 1997-11-11 Lintec Corp 粘着剤組成物およびこれを用いた粘着シート
US6312800B1 (en) * 1997-02-10 2001-11-06 Lintec Corporation Pressure sensitive adhesive sheet for producing a chip
JPH1140520A (ja) * 1997-07-23 1999-02-12 Toshiba Corp ウェーハの分割方法及び半導体装置の製造方法
EP0926732A3 (de) * 1997-12-10 2001-01-03 Nitto Denko Corporation Herstellungsverfahren für Halbleiteranordnung und druckempfindliche Klebschicht für Oberflächeschutz
JP3739570B2 (ja) * 1998-06-02 2006-01-25 リンテック株式会社 粘着シートおよびその利用方法
EP2679224A1 (de) * 2007-08-01 2014-01-01 University of Pittsburgh of the Commonwealth System of Higher Education Nitro-Ölsäuremodulation von Typ-II-Diabetes

Also Published As

Publication number Publication date
DE69918618T2 (de) 2005-08-25
KR20000017349A (ko) 2000-03-25
CN1145202C (zh) 2004-04-07
EP0981156A2 (de) 2000-02-23
TW463254B (en) 2001-11-11
JP3410371B2 (ja) 2003-05-26
JP2000068237A (ja) 2000-03-03
US6465330B1 (en) 2002-10-15
EP0981156A3 (de) 2002-01-09
CN1247382A (zh) 2000-03-15
KR100571352B1 (ko) 2006-04-14
EP0981156B1 (de) 2004-07-14

Similar Documents

Publication Publication Date Title
DE69918618D1 (de) Haftklebefolie zum Oberflächenschutz beim Schleifen der Rückseite eines Halbleiterplättchens und Verfahren zur Verwendung derselben
DE69915978D1 (de) Druckempfindlicher Klebefilm zur Verwendung in der Halbleiterwaferbearbeitung
DE69903215D1 (de) Verfahren und Vorrichtung zum Schleifen der Oberfläche einer Halbleiterscheibe
DE69817143D1 (de) Schleifmittel und verfahren zum polieren von halbleitersubstraten
DE69702272D1 (de) Verfahren zum Belichten der Randbereiche eines Halbleiterwafers, und Gerät zur Ausführung des Verfahrens
DE69406041D1 (de) Polierscheibe und ein Verfahren zur Polierung eines Halbleitersubstrats
ATA2998A (de) Verfahren und vorrichtung zum ausgerichteten zusammenführen von scheibenförmigen halbleitersubstraten
DE69927111D1 (de) Verfahren und Vorrichtung zum Polieren von Substraten
TWI349315B (en) Surface protecting sheet and method of grinding semiconductor wafer
MY123013A (en) Pressure sensitive adhesive sheet and method of use thereof
DE69823407D1 (de) Verfahren und Vorrichtung zum Polieren einer flachen Oberfläche mittels eines Gurtschleifkissens
DE60228542D1 (de) Verfahren und Vorrichtung zum Prüfen der Oberfläche von Substraten
DE69607547D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
EP0454314A3 (en) Method and apparatus for applying a layer of fluid material on a semiconductor wafer
DE19580932T1 (de) Verfahren und Vorrichtung zum Polieren von Wafern
EP0977254A3 (de) Schmelzklebfolie zum Halten und Schützen eines halbleitenden Substrats und Verfahren zur Aufbringung
DE69709934D1 (de) Verfahren und vorrichtung zum polieren von halbleiterscheiben
DE59802824D1 (de) Verfahren und Vorrichtung zum Polieren von Halbleiterscheiben
DE69934271D1 (de) Verfahren zur Wiedergewinnung eines abgetrennten Wafers und zur Wiedergewinnung verwendeter Siliziumwafer
DE59711950D1 (de) Verfahren zum anisotropen plasmaätzen verschiedener substrate
DE69709431D1 (de) Verfahren und Vorrichtung zum Schleifen des Umfangsrandes einer Linse
DE69212450D1 (de) Vorrichtung zum Polieren der Schrägkanten eines Wafers
DE69410204D1 (de) Vorrichtung zum Polieren des Umfangs eines Wafers
DE59805963D1 (de) Verfahren zum erkennen des übergangs verschiedener materialien beim ätzen von halbleiterstrukturen
DE69711994D1 (de) Verfahren und Vorrichtung zum Regeln der Planheit von polierten Halbleiterscheiben

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 981156

Country of ref document: EP

Representative=s name: WEICKMANN & WEICKMANN, DE

R081 Change of applicant/patentee

Ref document number: 981156

Country of ref document: EP

Owner name: LINTEC CORP., JP

Free format text: FORMER OWNER: LINTEC CORP., KABUSHIKI KAISHA TOSHIBA, , JP

Effective date: 20120829

R082 Change of representative

Ref document number: 981156

Country of ref document: EP

Representative=s name: WEICKMANN & WEICKMANN, DE

Effective date: 20120829