CN106847846A - 一种超薄图像传感器晶片的磨制方法 - Google Patents

一种超薄图像传感器晶片的磨制方法 Download PDF

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CN106847846A
CN106847846A CN201611203985.3A CN201611203985A CN106847846A CN 106847846 A CN106847846 A CN 106847846A CN 201611203985 A CN201611203985 A CN 201611203985A CN 106847846 A CN106847846 A CN 106847846A
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emery wheel
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陈亚
王成
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Jiangsu Main Structure Of A Bridge Image Science And Technology Co Ltd
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Abstract

本发明公开了一种超薄图像传感器晶片的磨制方法，主要包括粗磨、精磨、抛光和分片等工艺，为解决晶片在精磨至超薄时产生的强度不足和易碎裂问题，在精磨前通过双面UV胶蓝膜将晶片贴附在高强度透光支撑件上形成组合体，并且在后面的抛光、分片处理过程中将组合体整体转移，以解决超薄晶片进行转移易产生变形和扭曲问题。最后通过UV光照射，移除支撑件和双面UV胶蓝膜得到超薄图像传感器单体芯片。通过本发明方法磨制后的晶片厚度在100um左右，达到行业内的最薄水准，对高像素摄像头产品的整体高度减薄起到至关重要的作用。

Description

一种超薄图像传感器晶片的磨制方法
技术领域
本发明涉及一种超薄图像传感器晶片的磨制方法，属于晶片制造工艺技术领域。
背景技术
目前行业内应用于图像传感器晶片的磨制方法主要是将待研磨的晶片通过真空吸附的方式固定在设备的专用平台上进行粗磨、精磨、抛光、分片等处理，粗磨是将图像传感器晶片从晶片加工完成时的厚度磨制到300～400um，然后再将粗磨完成后的300～400um晶片进行精磨减薄，这个减薄过程中由于研磨用的金刚砂轮对晶片背面的硅基材是一种物理损伤过程，这会在硅基材表面形成微裂纹，晶片的应力会增加、强度会越来越弱，很容易导致晶片碎裂问题，造成产品报废，同时精磨后的晶片如果磨制的太薄，以当前现有的生产工序间的人工转移方式很容易产生变形和扭曲，这样会导致图像传感器晶片上每个单体芯片的有效成像区域的感光像素点不在一个平面上，会严重影响图像传感器芯片在摄像头产品上的成像效果。因此，以现有的生产工艺方法，如果要保证晶片在磨制过程中不易产生损坏，同步要保证转移过程中不易变形，图像传感器晶片厚度目前只能做到150um左右才最有品质保障，这满足不了我们对图像传感器晶片超薄化的要求。
发明内容
发明目的：针对现有技术中存在的问题，本发明提供一种超薄图像传感器晶片的磨制方法，磨制后的晶片厚度为100um左右，达到行业内的最薄水准，并且解决超薄晶片在生产过程中进行转移易产生变形和扭曲的问题。
技术方案：为实现上述发明目的，本发明采用如下技术方案：
一种超薄图像传感器晶片的磨制方法，包括如下步骤：
(1)将待研磨的图像传感器晶片正面贴上单面UV胶蓝膜，正面朝下，通过真空吸气的方式固定在粗磨工站的可自转多孔承载平台上；
(2)利用粗磨金刚砂磨轮从图像传感器晶片背面对硅基材进行打磨，同时多孔承载平台带动图像传感器晶片转动，金刚砂磨轮的推进系统带动磨轮向下运动，将图像传感器晶片厚度磨薄到250～350um；
(3)将粗磨完成后的图像传感器晶片移出进行UV曝光，去掉单面UV胶蓝膜，再将图像传感器晶片正面通过双面UV胶蓝膜贴附到支撑件上，形成组合体，将组合体装在精磨工站的可自转多孔承载平台上；
(4)利用精磨金刚砂磨轮从图像传感器晶片背面对硅基材再进行精细打磨，同时多孔承载平台带动图像传感器晶片转动，金刚砂磨轮的推进系统带动磨轮的向下运动，在将晶片从130～180um减薄到90～120um过程中，提高精磨金刚砂磨轮的旋转速度，并降低金刚砂磨轮的推进系统速度和多孔承载平台的自转速度，最终将图像传感器晶片厚度磨薄到90～120um；
(5)将组合体转移到抛光工站对硅基材进行抛光处理；
(6)将组合体转移到分片工站进行切割；
(7)将切割好的图像传感器晶片硅基材面贴上单面UV胶蓝膜，并使用UV光照射双面UV胶蓝膜区域后，移除支撑件和双面UV胶蓝膜。
作为优选，所述支撑件由高强度钢化玻璃制成，其厚度为4～6mm，表面强度应力为90～120MPa。
作为优选，所述步骤(2)粗磨过程中粗磨金刚砂磨轮的旋转速度控制在1100～1500转/分钟，金刚砂磨轮的推进系统速度控制在5～8um/秒，多孔承载平台的自转速度控制在150～250转/分钟。
作为优选，所述步骤(4)精磨过程采用的磨轮金刚砂粒直径在0.3um以下。
作为优选，所述步骤(4)中，在将晶片从250～350um减薄到130～180um过程中，精磨金刚砂磨轮的旋转速度控制在1800～2200转/分钟，金刚砂磨轮的推进系统速度控制在2～4um/秒，多孔承载平台的自转速度控制在100～150转/分钟，在将晶片从130～180um减薄到90～120um过程中，精磨金刚砂磨轮的旋转速度控制在2300～2800转/分钟，金刚砂磨轮的推进系统速度控制在0.2～0.5um/秒，多孔承载平台的自转速度控制在50～100转/分钟。
有益效果：本发明将困扰业界无法将图像传感器晶片做薄到100um左右的技术难题得以攻克，对高像素摄像头产品的整体高度减薄起到至关重要的效果；在超薄图像传感器晶片的磨制和转移过程中使用的高强度钢化玻璃支撑，同步解决在超薄化磨制过程中容易导致晶片产生裂纹，造成破碎，保证图像传感器晶片在做到最薄的同时平整度不发生改变，这样就能保证图像传感器成像清晰度保持均匀，图像传感器晶片减薄使产品具备了更好的散热功能，使图像传感器成像时的热噪点产生大大降低，提升图像画质。
附图说明
图1为本发明实施例的简要流程图。
图2为本发明实施例中粗磨示意图。
图3为本发明实施例中组合体示意图。
图4为本发明实施例中精磨示意图。
图5为本发明实施例中抛光示意图。
以上图中：1-粗磨金刚砂磨轮，2-图像传感器晶片，3-300um厚度图像传感器晶片，4-双面UV胶蓝膜，5-高强度钢化玻璃支撑件，6-精磨金刚砂磨轮，7-100um厚度图像传感器晶片，8-抛光系统，9-100um厚度图像传感器晶片+双面UV胶蓝膜+高强度钢化玻璃支撑件组成的组合体。
具体实施方式
下面结合附图和具体实施例，进一步说明本发明。
如图1所示，本发明实施公开的一种超薄图像传感器晶片的磨制方法，主要包括粗磨、精磨、抛光和分片等工艺，在粗磨前将晶片正面贴单面UV胶蓝膜，以保护正面，为解决晶片在精磨至超薄时产生的强度不足和易碎裂问题，在精磨前通过双面UV胶蓝膜将晶片贴附在高强度透光支撑件上形成组合体，并且在后面的抛光、分片处理过程中将组合体整体转移，以解决超薄晶片进行转移易产生变形和扭曲问题。最后通过UV光照射，移除支撑件和双面UV胶蓝膜得到超薄图像传感器单体芯片。所采用的高强度透光支撑件可以是厚度为4～6mm，表面强度应力为90～120MPa的高强度钢化玻璃支撑件。
经过粗磨工艺后将图像传感器晶片的厚度磨薄到250～350um，再经过精磨工艺磨薄到90～120um，在精磨工艺中，将磨制过程分为两个阶段，在厚度由250～350下降到130～180um的过程中与现有工艺技术类似，粗磨金刚砂磨轮的旋转速度控制在1100～1500转/分钟，金刚砂磨轮的推进系统速度控制在5～8um/秒，多孔承载平台的自转速度控制在150～250转/分钟；当晶片从130～180um磨薄到90～120um的过程，为防止晶片强度变弱、变脆而产生较深的微裂纹，则需要多次实验精心调整各设备的参数，将精磨金刚砂磨轮的旋转速度控制在2300～2800转/分钟，金刚砂磨轮的推进系统速度控制在0.2～0.5um/秒，多孔承载平台的自转速度控制在50～100转/分钟，以保证晶片顺利磨薄到想要的厚度。
下面结合图2-5说明采用本发明实施例的方法磨制100±3um的超薄晶片的详细磨制步骤：
1)将待研磨的图像传感器晶片正面贴上单面UV胶蓝膜，保证图像传感器晶片正面的感光区域和微电路区域在磨制过程中不被摩擦和刮伤。
2)将图像传感器晶片正面朝下和单面UV胶蓝膜一起，通过真空吸气的方式固定在粗磨工站的可自转多孔陶瓷承载平台上；图2为粗磨工站简要示意图，在粗磨工位时，设备机构带动粗磨金刚砂磨轮1进行匀速转动，粗磨工位的此设备机构还具备垂直向下的推进系统，推动粗磨金刚砂磨轮1匀速向下移动，图像传感器晶片2通过真空吸气的方式固定在多孔陶瓷承载平台上后，多孔陶瓷承载平台可带动图像传感器晶片2匀速转动。
3)利用高速旋转的粗磨金刚砂磨轮1从图像传感器晶片2背面对硅基材进行打磨，同时多孔承载平台带动图像传感器晶片转动，金刚砂磨轮的推进系统带动磨轮匀速缓慢的向下运动，此过程中粗磨金刚砂磨轮1的旋转速度需要控制在1200转/分钟，金刚砂磨轮的推进系统速度控制在5um/秒，多孔承载平台的自转速度控制在200转/分钟，粗磨制程需要将图像传感器晶片厚度磨薄到300um。
4)将粗磨完成后的300um厚度图像传感器晶片3从粗磨工站移出进行UV曝光，将单面UV胶蓝膜去掉，接着在图像传感器晶片3正面再贴上双面UV胶蓝膜4，然后将贴上双面UV胶蓝膜图像传感器晶片贴附到光滑、平整的高强度钢化玻璃支撑件5上，这个高强度钢化玻璃支撑件5在超薄化磨制过程中起着至关重要的作用。
5)将300um厚度图像传感器晶片3+双面UV胶蓝膜4+高强度钢化玻璃支撑件5的组合体装在精磨工站的可自转多孔承载平台上；精磨工站与粗磨工站的设备机构类似。
6)利用高速旋转的精磨金刚砂磨轮6从图像传感器晶片背面对硅基材再进行精细打磨，同样多孔承载平台带动图像传感器晶片转动，金刚砂磨轮的推进系统带动磨轮匀速缓慢的向下运动，这个过程由于图像传感器晶片背面的硅基材被打磨的越来越薄，晶片强度会变弱、变脆，为了保证这个过程晶片的硅基材不会产生较深的微裂纹，将磨轮金刚砂粒直径减小到0.3um以下，在将晶片从300um减薄到150um过程中，精磨金刚砂磨轮的旋转速度需要控制在2000转/分钟，金刚砂磨轮的推进系统速度控制在2um/秒，多孔承载平台的自转速度控制在100转/分钟，在将晶片从150um减薄到100um过程中，精磨金刚砂磨轮的旋转速度需要控制在2500转/分钟，金刚砂磨轮的推进系统速度控制在0.2um/秒，多孔承载平台的自转速度控制在50转/分钟，最终得到我们需要的100um厚度图像传感器晶片7(图4中双面UV胶蓝膜和高强度钢化玻璃支撑件未示出)。
7)由于精磨过程中硅基材还会产生一些较浅的微裂纹，同时晶片的应力会增加，为了保证不会有碎片风险，需要将厚度磨薄至100um的图像传感器晶片+双面UV胶蓝膜+高强度钢化玻璃支撑件的组合体9转移到抛光工站，使用精细抛光系统8对100um厚度图像传感器晶片7背部的硅基材进行抛光处理，消除硅基材的轻微裂纹和减小图像传感器晶片的应力，以提升图像传感器晶片强度，确保图像传感器晶片不易破碎。
8)将抛光后的100um厚度图像传感器晶片+双面UV胶蓝膜+高强度钢化玻璃支撑件的组合体9转移到分片工站进行切割。
9)将切割好的100um厚度图像传感器晶片+双面UV胶蓝膜+高强度钢化玻璃支撑件的组合体9转移到贴有单面UV胶蓝膜的不锈钢环上，让图像传感器晶片硅基材面与单面UV胶蓝膜充分粘贴好，然后使用UV光透过高强度钢化玻璃支撑件对双面UV胶蓝膜区域进行照射，使其胶粘性减弱后，将高强度钢化玻璃支撑件和双面UV胶蓝膜移除，最终得到我们想要的超薄图像传感器单体芯片。
上述实施例仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而这些属于本发明的精神所引伸出的显而易见的变化或变动仍处于本发明的保护范围之中。

Claims (5)

1.一种超薄图像传感器晶片的磨制方法，其特征在于，包括如下步骤：
（1）将待研磨的图像传感器晶片正面贴上单面UV胶蓝膜，正面朝下，通过真空吸气的方式固定在粗磨工站的可自转多孔承载平台上；
（2）利用粗磨金刚砂磨轮从图像传感器晶片背面对硅基材进行打磨，同时多孔承载平台带动图像传感器晶片转动，金刚砂磨轮的推进系统带动磨轮向下运动，将图像传感器晶片厚度磨薄到250~350um；
（3）将粗磨完成后的图像传感器晶片移出进行UV曝光，去掉单面UV胶蓝膜，再将图像传感器晶片正面通过双面UV胶蓝膜贴附到支撑件上，形成组合体，将组合体装在精磨工站的可自转多孔承载平台上；
（4）利用精磨金刚砂磨轮从图像传感器晶片背面对硅基材再进行精细打磨，同时多孔承载平台带动图像传感器晶片转动，金刚砂磨轮的推进系统带动磨轮的向下运动，在将晶片从130~180um减薄到90~120um过程中，提高精磨金刚砂磨轮的旋转速度，并降低金刚砂磨轮的推进系统速度和多孔承载平台的自转速度，最终将图像传感器晶片厚度磨薄到90~120um；
（5）将组合体转移到抛光工站对硅基材进行抛光处理；
（6）将组合体转移到分片工站进行切割；
（7）将切割好的图像传感器晶片硅基材面贴上单面UV胶蓝膜，并使用UV光照射双面UV胶蓝膜区域后，移除支撑件和双面UV胶蓝膜。
2.根据权利要求1所述的一种超薄图像传感器晶片的磨制方法，其特征在于，所述支撑件由高强度钢化玻璃制成，其厚度为4~6mm，表面强度应力为90~120MPa。
3.根据权利要求1所述的一种超薄图像传感器晶片的磨制方法，其特征在于，所述步骤（2）粗磨过程中粗磨金刚砂磨轮的旋转速度控制在1100~1500转/分钟，金刚砂磨轮的推进系统速度控制在5~8um/秒，多孔承载平台的自转速度控制在150~250转/分钟。
4.根据权利要求1所述的一种超薄图像传感器晶片的磨制方法，其特征在于，所述步骤（4）精磨过程采用的磨轮金刚砂粒直径在0.3um以下。
5.根据权利要求1所述的一种超薄图像传感器晶片的磨制方法，其特征在于，所述步骤（4）中，在将晶片从250~350um减薄到130~180um过程中，精磨金刚砂磨轮的旋转速度控制在1800~2200转/分钟，金刚砂磨轮的推进系统速度控制在2~4um/秒，多孔承载平台的自转速度控制在100~150转/分钟，在将晶片从130~180um减薄到90~120um过程中，精磨金刚砂磨轮的旋转速度控制在2300~2800转/分钟，金刚砂磨轮的推进系统速度控制在0.2~0.5um/秒，多孔承载平台的自转速度控制在50~100转/分钟。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968037A (zh) * 2017-11-01 2018-04-27 福建晶安光电有限公司 一种单面抛光超薄晶圆加工方法
CN108231678A (zh) * 2017-12-28 2018-06-29 武汉驿路通科技股份有限公司 一种平面波导型光分路器芯片切割工艺
CN110783178A (zh) * 2019-11-01 2020-02-11 广东先导先进材料股份有限公司 一种半导体晶片及其加工方法
CN115284151A (zh) * 2022-08-18 2022-11-04 广东先导微电子科技有限公司 一种无蜡抛光工艺方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1247382A (zh) * 1998-08-18 2000-03-15 琳得科株式会社 用于晶片背磨的表面保护片及其使用方法
CN1423304A (zh) * 2001-12-03 2003-06-11 株式会社迪斯科 一种处理半导体晶片的方法和所用的半导体晶片的衬底
CN1886831A (zh) * 2003-11-27 2006-12-27 3M创新有限公司 半导体芯片的制造方法
CN102768981A (zh) * 2012-07-06 2012-11-07 上海新傲科技股份有限公司 带有绝缘埋层衬底的制备方法
CN104979185A (zh) * 2015-05-13 2015-10-14 北京通美晶体技术有限公司 一种超薄半导体晶片及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1247382A (zh) * 1998-08-18 2000-03-15 琳得科株式会社 用于晶片背磨的表面保护片及其使用方法
CN1423304A (zh) * 2001-12-03 2003-06-11 株式会社迪斯科 一种处理半导体晶片的方法和所用的半导体晶片的衬底
CN1886831A (zh) * 2003-11-27 2006-12-27 3M创新有限公司 半导体芯片的制造方法
CN102768981A (zh) * 2012-07-06 2012-11-07 上海新傲科技股份有限公司 带有绝缘埋层衬底的制备方法
CN104979185A (zh) * 2015-05-13 2015-10-14 北京通美晶体技术有限公司 一种超薄半导体晶片及其制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DANIEILU 等: "《先进封装材料》", 31 December 2012, 机械工业出版社 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107968037A (zh) * 2017-11-01 2018-04-27 福建晶安光电有限公司 一种单面抛光超薄晶圆加工方法
CN108231678A (zh) * 2017-12-28 2018-06-29 武汉驿路通科技股份有限公司 一种平面波导型光分路器芯片切割工艺
CN108231678B (zh) * 2017-12-28 2020-10-27 武汉驿路通科技股份有限公司 一种平面波导型光分路器芯片切割工艺
CN110783178A (zh) * 2019-11-01 2020-02-11 广东先导先进材料股份有限公司 一种半导体晶片及其加工方法
CN110783178B (zh) * 2019-11-01 2022-08-12 广东先导先进材料股份有限公司 一种半导体晶片及其加工方法
CN115284151A (zh) * 2022-08-18 2022-11-04 广东先导微电子科技有限公司 一种无蜡抛光工艺方法

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