KR100519404B1 - 신규한 락톤 함유 화합물, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 - Google Patents

신규한 락톤 함유 화합물, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 Download PDF

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Publication number
KR100519404B1
KR100519404B1 KR10-1999-0040854A KR19990040854A KR100519404B1 KR 100519404 B1 KR100519404 B1 KR 100519404B1 KR 19990040854 A KR19990040854 A KR 19990040854A KR 100519404 B1 KR100519404 B1 KR 100519404B1
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group
carbon atoms
formula
branched
linear
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KR10-1999-0040854A
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Korean (ko)
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KR20000023368A (ko
Inventor
고지 하세가와
쯔네히로 니시
다께시 긴쇼
쥰 하따께야마
오사무 와따나베
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신에쓰 가가꾸 고교 가부시끼가이샤
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D313/00—Heterocyclic compounds containing rings of more than six members having one oxygen atom as the only ring hetero atom
    • C07D313/02—Seven-membered rings
    • C07D313/04—Seven-membered rings not condensed with other rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Furan Compounds (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
KR10-1999-0040854A 1998-09-25 1999-09-22 신규한 락톤 함유 화합물, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법 Expired - Lifetime KR100519404B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP27067398 1998-09-25
JP98-270673 1998-09-25

Publications (2)

Publication Number Publication Date
KR20000023368A KR20000023368A (ko) 2000-04-25
KR100519404B1 true KR100519404B1 (ko) 2005-10-07

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ID=17489361

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-0040854A Expired - Lifetime KR100519404B1 (ko) 1998-09-25 1999-09-22 신규한 락톤 함유 화합물, 고분자 화합물, 레지스트 재료 및 패턴 형성 방법

Country Status (4)

Country Link
US (2) US6280898B1 (enExample)
JP (1) JP4131062B2 (enExample)
KR (1) KR100519404B1 (enExample)
TW (1) TW442706B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101116963B1 (ko) * 2006-10-04 2012-03-14 신에쓰 가가꾸 고교 가부시끼가이샤 고분자 화합물, 레지스트 재료, 및 패턴 형성 방법
KR101286850B1 (ko) 2006-07-28 2013-07-17 신에쓰 가가꾸 고교 가부시끼가이샤 락톤 함유 화합물, 고분자 화합물, 레지스트 재료 및 패턴형성 방법

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