TWI371657B - Positive resist composition for immersion exposure and method of pattern formation with the same - Google Patents

Positive resist composition for immersion exposure and method of pattern formation with the same

Info

Publication number
TWI371657B
TWI371657B TW094104577A TW94104577A TWI371657B TW I371657 B TWI371657 B TW I371657B TW 094104577 A TW094104577 A TW 094104577A TW 94104577 A TW94104577 A TW 94104577A TW I371657 B TWI371657 B TW I371657B
Authority
TW
Taiwan
Prior art keywords
same
resist composition
pattern formation
positive resist
immersion exposure
Prior art date
Application number
TW094104577A
Other languages
Chinese (zh)
Other versions
TW200535569A (en
Inventor
Kunihiko Kodama
Hiromi Kanda
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of TW200535569A publication Critical patent/TW200535569A/en
Application granted granted Critical
Publication of TWI371657B publication Critical patent/TWI371657B/en

Links

Classifications

    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D17/00—Excavations; Bordering of excavations; Making embankments
    • E02D17/02—Foundation pits
    • E02D17/04—Bordering surfacing or stiffening the sides of foundation pits
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • E—FIXED CONSTRUCTIONS
    • E02—HYDRAULIC ENGINEERING; FOUNDATIONS; SOIL SHIFTING
    • E02D—FOUNDATIONS; EXCAVATIONS; EMBANKMENTS; UNDERGROUND OR UNDERWATER STRUCTURES
    • E02D2250/00—Production methods
    • E02D2250/0046—Production methods using prestressing techniques

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Mining & Mineral Resources (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Paleontology (AREA)
  • Civil Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
TW094104577A 2004-02-20 2005-02-17 Positive resist composition for immersion exposure and method of pattern formation with the same TWI371657B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004043990 2004-02-20

Publications (2)

Publication Number Publication Date
TW200535569A TW200535569A (en) 2005-11-01
TWI371657B true TWI371657B (en) 2012-09-01

Family

ID=34858034

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094104577A TWI371657B (en) 2004-02-20 2005-02-17 Positive resist composition for immersion exposure and method of pattern formation with the same

Country Status (3)

Country Link
US (1) US7273690B2 (en)
KR (1) KR101238315B1 (en)
TW (1) TWI371657B (en)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7449573B2 (en) * 2004-02-16 2008-11-11 Fujifilm Corporation Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition
JP4724427B2 (en) * 2005-01-27 2011-07-13 富士フイルム株式会社 Coating composition, optical film, antireflection film, polarizing plate, and display device using them
US8741537B2 (en) * 2005-03-04 2014-06-03 Fujifilm Corporation Positive resist composition and pattern-forming method using the same
JP4754265B2 (en) * 2005-05-17 2011-08-24 東京応化工業株式会社 Positive resist composition and resist pattern forming method
US7927779B2 (en) 2005-06-30 2011-04-19 Taiwan Semiconductor Manufacturing Companym, Ltd. Water mark defect prevention for immersion lithography
JP4695941B2 (en) * 2005-08-19 2011-06-08 富士フイルム株式会社 Positive resist composition for immersion exposure and pattern forming method using the same
JP4562628B2 (en) * 2005-09-20 2010-10-13 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP4619913B2 (en) * 2005-09-28 2011-01-26 富士フイルム株式会社 Optical compensation film, polarizing plate, and liquid crystal display device
JP4881687B2 (en) * 2005-12-09 2012-02-22 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
US8426101B2 (en) * 2005-12-21 2013-04-23 Fujifilm Corporation Photosensitive composition, pattern-forming method using the photosensitve composition and compound in the photosensitive composition
EP2420891B1 (en) * 2006-10-30 2021-06-23 Rohm and Haas Electronic Materials LLC Process for immersion lithography
US7399576B1 (en) 2007-02-28 2008-07-15 Eastman Kodak Company Positive-working radiation-sensitive composition and elements
KR101330944B1 (en) * 2007-10-15 2013-11-18 제이에스알 가부시끼가이샤 Sulfone compound, sulfonic acid salt, and radiation-sensitive resin composition
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
JP5548406B2 (en) * 2008-08-22 2014-07-16 東京応化工業株式会社 Positive resist composition, resist pattern forming method, polymer compound
JP5337579B2 (en) 2008-12-04 2013-11-06 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5470053B2 (en) * 2010-01-05 2014-04-16 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5708663B2 (en) * 2010-12-28 2015-04-30 Jsr株式会社 Radiation sensitive resin composition and compound
JP5593277B2 (en) * 2011-06-30 2014-09-17 富士フイルム株式会社 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film and pattern formation method using the composition
JP6002378B2 (en) 2011-11-24 2016-10-05 東京応化工業株式会社 Method for producing polymer compound
KR101633657B1 (en) * 2011-12-28 2016-06-28 금호석유화학 주식회사 Additive for resist and resist composition comprising same
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US20140120469A1 (en) * 2012-10-31 2014-05-01 Rohm And Haas Electronic Materials Llc Thermal acid generators for use in photoresist
US10907061B2 (en) * 2015-10-09 2021-02-02 Merck Patent Gmbh Formulations containing N,N-dialkylaniline solvents

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPH07220990A (en) 1994-01-28 1995-08-18 Hitachi Ltd Pattern forming method and exposure apparatus therefor
JP3747566B2 (en) 1997-04-23 2006-02-22 株式会社ニコン Immersion exposure equipment
KR100271420B1 (en) * 1998-09-23 2001-03-02 박찬구 Chemically Amplified Positive Photoresist Composition
JP4131062B2 (en) * 1998-09-25 2008-08-13 信越化学工業株式会社 Novel lactone-containing compound, polymer compound, resist material, and pattern forming method
US6673513B2 (en) * 2000-01-19 2004-01-06 Samsung Electronics Co., Ltd. Photosensitive polymer including copolymer of alkyl vinyl ether and resist composition containing the same
US6777157B1 (en) * 2000-02-26 2004-08-17 Shipley Company, L.L.C. Copolymers and photoresist compositions comprising same
EP1136885B1 (en) * 2000-03-22 2007-05-09 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition and patterning method
KR100660513B1 (en) * 2000-04-27 2006-12-22 신에쓰 가가꾸 고교 가부시끼가이샤 Polymer, Chemically Amplified Resist Composition and Patterning Process
US6749987B2 (en) * 2000-10-20 2004-06-15 Fuji Photo Film Co., Ltd. Positive photosensitive composition
WO2002069040A1 (en) * 2001-02-27 2002-09-06 Shipley Company, Llc Novel polymers, processes for polymer synthesis and photoresist compositions
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US6677419B1 (en) * 2002-11-13 2004-01-13 International Business Machines Corporation Preparation of copolymers
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
US7005230B2 (en) * 2003-01-16 2006-02-28 Jsr Corporation Radiation-sensitive resin composition
JP4121388B2 (en) * 2003-01-30 2008-07-23 富士フイルム株式会社 Positive resist composition and compound that generates acid upon irradiation with actinic rays
JP4533639B2 (en) * 2003-07-22 2010-09-01 富士フイルム株式会社 SENSITIVE COMPOSITION, COMPOUND, AND PATTERN FORMING METHOD USING THE SENSITIVE COMPOSITION

Also Published As

Publication number Publication date
US20050186505A1 (en) 2005-08-25
KR101238315B1 (en) 2013-02-28
KR20060042110A (en) 2006-05-12
US7273690B2 (en) 2007-09-25
TW200535569A (en) 2005-11-01

Similar Documents

Publication Publication Date Title
TWI371657B (en) Positive resist composition for immersion exposure and method of pattern formation with the same
EP1736827A4 (en) Positive resist composition for immersion exposure and method for forming resist pattern
TWI368825B (en) Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
EP1830227A4 (en) Resist composition for liquid immersion exposure and method for resist pattern formation
TWI372945B (en) Protective film-forming composition for immersion exposure and pattern-forming method using the same
EP1950610A4 (en) Composition for forming upper film and method for forming photoresist pattern
TWI368106B (en) Resist composition for use in immersion lithography and process for forming resist pattern
EP1741730A4 (en) Resist protecting film forming material for immersion exposure process and resist pattern forming method using the protecting film
TWI366067B (en) Photosensitive composition and pattern forming method using the same
EP1739483B8 (en) Positive photosensitive composition and pattern forming method using the same
TWI369580B (en) Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition
EP1829945A4 (en) Film, silica film and method of forming the same, composition for forming silica film, and electronic part
EP1855159A4 (en) Composition for underlayer film of resist and process for producing the same
EP1610178A4 (en) Resist composition for liquid immersion exposure process and method of forming resist pattern therewith
EP1598701A4 (en) Photoresist composition and method of forming resist pattern
GB0504957D0 (en) Pattern exposure method and pattern exposure apparatus
EP2087404A4 (en) Composition for resist lower layer film formation and method for pattern formation
EP1780599A4 (en) Photosensitive composition, pattern forming material, photosensitive laminate, pattern forming apparatus and method of pattern formation
EP2251742A4 (en) Composition for forming resist underlayer film and method for forming resist pattern using the same
GB0508660D0 (en) Advanced pattern definition for particle-beam exposure
EP2157477A4 (en) Resist composition for negative working-type development, and method for pattern formation using the resist composition
EP1757989A4 (en) Water-soluble resin composition and method of forming pattern therewith
EP1721870A4 (en) Method of nitrifying ammonium-nitrogen-containing water and method of treating the same
EP1602983A4 (en) Water soluble resin composition, method of pattern formation and method of inspecting resist pattern
EP1840655A4 (en) Material for forming resist protection films and method for resist pattern formation with the same