KR100445500B1 - 스위칭 회로 - Google Patents

스위칭 회로 Download PDF

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Publication number
KR100445500B1
KR100445500B1 KR10-2001-0057085A KR20010057085A KR100445500B1 KR 100445500 B1 KR100445500 B1 KR 100445500B1 KR 20010057085 A KR20010057085 A KR 20010057085A KR 100445500 B1 KR100445500 B1 KR 100445500B1
Authority
KR
South Korea
Prior art keywords
switching
circuit
switching element
fuse
node
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2001-0057085A
Other languages
English (en)
Korean (ko)
Other versions
KR20020062677A (ko
Inventor
오치타케히로
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20020062677A publication Critical patent/KR20020062677A/ko
Application granted granted Critical
Publication of KR100445500B1 publication Critical patent/KR100445500B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR10-2001-0057085A 2001-01-23 2001-09-17 스위칭 회로 Expired - Fee Related KR100445500B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00015000 2001-01-23
JP2001015000A JP2002216493A (ja) 2001-01-23 2001-01-23 救済修正回路および半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20020062677A KR20020062677A (ko) 2002-07-29
KR100445500B1 true KR100445500B1 (ko) 2004-08-21

Family

ID=18881620

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0057085A Expired - Fee Related KR100445500B1 (ko) 2001-01-23 2001-09-17 스위칭 회로

Country Status (4)

Country Link
US (1) US6469943B2 (enExample)
JP (1) JP2002216493A (enExample)
KR (1) KR100445500B1 (enExample)
TW (1) TW511245B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203496A (ja) * 2002-01-08 2003-07-18 Mitsubishi Electric Corp 半導体記憶装置
JP2006228330A (ja) * 2005-02-17 2006-08-31 Toshiba Corp 半導体記憶装置
JP4817701B2 (ja) * 2005-04-06 2011-11-16 株式会社東芝 半導体装置
JP2007234155A (ja) * 2006-03-02 2007-09-13 Sony Corp 半導体記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657280A (en) * 1994-12-29 1997-08-12 Samsung Electronics Co., Ltd. Defective cell repairing circuit and method of semiconductor memory device
US6144592A (en) * 1998-06-08 2000-11-07 Kabushiki Kaisha Toshiba Semiconductor memory device having a redundant memory

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2530610B2 (ja) * 1986-02-27 1996-09-04 富士通株式会社 半導体記憶装置
JPS62235750A (ja) 1986-04-07 1987-10-15 Nec Corp 半導体集積回路
JPH02146195A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体記憶装置
JPH02198100A (ja) * 1989-01-26 1990-08-06 Nec Corp 半導体メモリ装置
JPH02310898A (ja) * 1989-05-25 1990-12-26 Nec Corp メモリ回路
JPH03203900A (ja) * 1989-12-29 1991-09-05 Nec Corp 半導体記憶装置
JP2888034B2 (ja) * 1991-06-27 1999-05-10 日本電気株式会社 半導体メモリ装置
JP3108488B2 (ja) * 1991-12-19 2000-11-13 株式会社 沖マイクロデザイン 半導体集積回路
KR940007241B1 (ko) * 1992-03-09 1994-08-10 삼성전자 주식회사 반도체 메모리 장치의 로우 리던던시장치
JPH06150689A (ja) * 1992-11-10 1994-05-31 Nec Corp 半導体メモリ
JPH06216253A (ja) 1993-01-19 1994-08-05 Sony Corp トリミング装置
KR0158484B1 (ko) * 1995-01-28 1999-02-01 김광호 불휘발성 반도체 메모리의 행리던던씨
JPH09213097A (ja) * 1996-02-07 1997-08-15 Hitachi Ltd ヒューズ装置及びそれを用いた半導体集積回路装置
JP4428733B2 (ja) * 1996-12-12 2010-03-10 株式会社ルネサステクノロジ 半導体記憶装置
JPH10335594A (ja) 1997-05-29 1998-12-18 New Japan Radio Co Ltd 抵抗トリミング回路及びそのトリミング方法
US6188618B1 (en) * 1998-04-23 2001-02-13 Kabushiki Kaisha Toshiba Semiconductor device with flexible redundancy system
JPH11353893A (ja) * 1998-06-08 1999-12-24 Mitsubishi Electric Corp 半導体記憶装置
JP2000123593A (ja) * 1998-08-13 2000-04-28 Toshiba Corp 半導体記憶装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5657280A (en) * 1994-12-29 1997-08-12 Samsung Electronics Co., Ltd. Defective cell repairing circuit and method of semiconductor memory device
US6144592A (en) * 1998-06-08 2000-11-07 Kabushiki Kaisha Toshiba Semiconductor memory device having a redundant memory

Also Published As

Publication number Publication date
US6469943B2 (en) 2002-10-22
JP2002216493A (ja) 2002-08-02
KR20020062677A (ko) 2002-07-29
US20020097083A1 (en) 2002-07-25
TW511245B (en) 2002-11-21

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