TW511245B - Switching circuit and semiconductor device - Google Patents

Switching circuit and semiconductor device Download PDF

Info

Publication number
TW511245B
TW511245B TW090123578A TW90123578A TW511245B TW 511245 B TW511245 B TW 511245B TW 090123578 A TW090123578 A TW 090123578A TW 90123578 A TW90123578 A TW 90123578A TW 511245 B TW511245 B TW 511245B
Authority
TW
Taiwan
Prior art keywords
circuit
switching
exchange
invalidation
mentioned
Prior art date
Application number
TW090123578A
Other languages
English (en)
Chinese (zh)
Inventor
Takehiro Ochi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW511245B publication Critical patent/TW511245B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW090123578A 2001-01-23 2001-09-25 Switching circuit and semiconductor device TW511245B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001015000A JP2002216493A (ja) 2001-01-23 2001-01-23 救済修正回路および半導体記憶装置

Publications (1)

Publication Number Publication Date
TW511245B true TW511245B (en) 2002-11-21

Family

ID=18881620

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090123578A TW511245B (en) 2001-01-23 2001-09-25 Switching circuit and semiconductor device

Country Status (4)

Country Link
US (1) US6469943B2 (enExample)
JP (1) JP2002216493A (enExample)
KR (1) KR100445500B1 (enExample)
TW (1) TW511245B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003203496A (ja) * 2002-01-08 2003-07-18 Mitsubishi Electric Corp 半導体記憶装置
JP2006228330A (ja) * 2005-02-17 2006-08-31 Toshiba Corp 半導体記憶装置
JP4817701B2 (ja) * 2005-04-06 2011-11-16 株式会社東芝 半導体装置
JP2007234155A (ja) * 2006-03-02 2007-09-13 Sony Corp 半導体記憶装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2530610B2 (ja) * 1986-02-27 1996-09-04 富士通株式会社 半導体記憶装置
JPS62235750A (ja) 1986-04-07 1987-10-15 Nec Corp 半導体集積回路
JPH02146195A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体記憶装置
JPH02198100A (ja) * 1989-01-26 1990-08-06 Nec Corp 半導体メモリ装置
JPH02310898A (ja) * 1989-05-25 1990-12-26 Nec Corp メモリ回路
JPH03203900A (ja) * 1989-12-29 1991-09-05 Nec Corp 半導体記憶装置
JP2888034B2 (ja) * 1991-06-27 1999-05-10 日本電気株式会社 半導体メモリ装置
JP3108488B2 (ja) * 1991-12-19 2000-11-13 株式会社 沖マイクロデザイン 半導体集積回路
KR940007241B1 (ko) * 1992-03-09 1994-08-10 삼성전자 주식회사 반도체 메모리 장치의 로우 리던던시장치
JPH06150689A (ja) * 1992-11-10 1994-05-31 Nec Corp 半導体メモリ
JPH06216253A (ja) 1993-01-19 1994-08-05 Sony Corp トリミング装置
KR0140178B1 (ko) * 1994-12-29 1998-07-15 김광호 반도체 메모리장치의 결함 셀 구제회로 및 방법
KR0158484B1 (ko) * 1995-01-28 1999-02-01 김광호 불휘발성 반도체 메모리의 행리던던씨
JPH09213097A (ja) * 1996-02-07 1997-08-15 Hitachi Ltd ヒューズ装置及びそれを用いた半導体集積回路装置
JP4428733B2 (ja) * 1996-12-12 2010-03-10 株式会社ルネサステクノロジ 半導体記憶装置
JPH10335594A (ja) 1997-05-29 1998-12-18 New Japan Radio Co Ltd 抵抗トリミング回路及びそのトリミング方法
US6188618B1 (en) * 1998-04-23 2001-02-13 Kabushiki Kaisha Toshiba Semiconductor device with flexible redundancy system
JPH11353893A (ja) * 1998-06-08 1999-12-24 Mitsubishi Electric Corp 半導体記憶装置
JP3749789B2 (ja) * 1998-06-08 2006-03-01 株式会社東芝 半導体記憶装置
JP2000123593A (ja) * 1998-08-13 2000-04-28 Toshiba Corp 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
US6469943B2 (en) 2002-10-22
KR100445500B1 (ko) 2004-08-21
JP2002216493A (ja) 2002-08-02
KR20020062677A (ko) 2002-07-29
US20020097083A1 (en) 2002-07-25

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