KR100232369B1 - 향상된 성능의 가로 방향 이중 확산 mos 트랜지스터 및 그 제조 방법 - Google Patents

향상된 성능의 가로 방향 이중 확산 mos 트랜지스터 및 그 제조 방법 Download PDF

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Publication number
KR100232369B1
KR100232369B1 KR1019920018876A KR920018876A KR100232369B1 KR 100232369 B1 KR100232369 B1 KR 100232369B1 KR 1019920018876 A KR1019920018876 A KR 1019920018876A KR 920018876 A KR920018876 A KR 920018876A KR 100232369 B1 KR100232369 B1 KR 100232369B1
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South Korea
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region
gate
drift region
conductivity type
conductive
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Expired - Lifetime
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Korean (ko)
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KR930009101A (ko
Inventor
말히 사트윈더
퉁 늑 와이
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윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR930009101A publication Critical patent/KR930009101A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H10D62/307—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations the doping variations being parallel to the channel lengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019920018876A 1991-10-15 1992-10-14 향상된 성능의 가로 방향 이중 확산 mos 트랜지스터 및 그 제조 방법 Expired - Lifetime KR100232369B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US77610291A 1991-10-15 1991-10-15
US776,102 1991-10-15

Publications (2)

Publication Number Publication Date
KR930009101A KR930009101A (ko) 1993-05-22
KR100232369B1 true KR100232369B1 (ko) 1999-12-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920018876A Expired - Lifetime KR100232369B1 (ko) 1991-10-15 1992-10-14 향상된 성능의 가로 방향 이중 확산 mos 트랜지스터 및 그 제조 방법

Country Status (6)

Country Link
US (2) US5304827A (cg-RX-API-DMAC10.html)
EP (1) EP0537684B1 (cg-RX-API-DMAC10.html)
JP (1) JP3187980B2 (cg-RX-API-DMAC10.html)
KR (1) KR100232369B1 (cg-RX-API-DMAC10.html)
DE (1) DE69225552T2 (cg-RX-API-DMAC10.html)
TW (1) TW224538B (cg-RX-API-DMAC10.html)

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Also Published As

Publication number Publication date
JP3187980B2 (ja) 2001-07-16
DE69225552D1 (de) 1998-06-25
EP0537684A1 (en) 1993-04-21
US5304827A (en) 1994-04-19
JPH05267652A (ja) 1993-10-15
US5382535A (en) 1995-01-17
TW224538B (cg-RX-API-DMAC10.html) 1994-06-01
DE69225552T2 (de) 1999-01-07
KR930009101A (ko) 1993-05-22
EP0537684B1 (en) 1998-05-20

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