DE60040798D1 - Halbleiteranordnung mit Driftbereichen mit entgegengesetzten Leitungstypen - Google Patents

Halbleiteranordnung mit Driftbereichen mit entgegengesetzten Leitungstypen

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Publication number
DE60040798D1
DE60040798D1 DE60040798T DE60040798T DE60040798D1 DE 60040798 D1 DE60040798 D1 DE 60040798D1 DE 60040798 T DE60040798 T DE 60040798T DE 60040798 T DE60040798 T DE 60040798T DE 60040798 D1 DE60040798 D1 DE 60040798D1
Authority
DE
Germany
Prior art keywords
semiconductor device
opposite conductivity
conductivity types
drift regions
drift
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60040798T
Other languages
English (en)
Inventor
Yoshitaka Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kansai Electric Power Co Inc
Original Assignee
Kansai Electric Power Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP30601299A external-priority patent/JP3987251B2/ja
Application filed by Kansai Electric Power Co Inc filed Critical Kansai Electric Power Co Inc
Application granted granted Critical
Publication of DE60040798D1 publication Critical patent/DE60040798D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7825—Lateral DMOS transistors, i.e. LDMOS transistors with trench gate electrode
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    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7809—Vertical DMOS transistors, i.e. VDMOS transistors having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors

Landscapes

  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE60040798T 1999-10-27 2000-10-24 Halbleiteranordnung mit Driftbereichen mit entgegengesetzten Leitungstypen Expired - Lifetime DE60040798D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP30601299A JP3987251B2 (ja) 1999-05-21 1999-10-27 半導体装置
PCT/JP2000/007444 WO2001031710A1 (fr) 1999-10-27 2000-10-24 Dispositif semi-conducteur

Publications (1)

Publication Number Publication Date
DE60040798D1 true DE60040798D1 (de) 2008-12-24

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE60040798T Expired - Lifetime DE60040798D1 (de) 1999-10-27 2000-10-24 Halbleiteranordnung mit Driftbereichen mit entgegengesetzten Leitungstypen

Country Status (4)

Country Link
US (1) US7470960B1 (de)
EP (2) EP1858085A3 (de)
DE (1) DE60040798D1 (de)
WO (1) WO2001031710A1 (de)

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JP5017865B2 (ja) * 2006-01-17 2012-09-05 富士電機株式会社 半導体装置
US7804150B2 (en) * 2006-06-29 2010-09-28 Fairchild Semiconductor Corporation Lateral trench gate FET with direct source-drain current path
US7605446B2 (en) * 2006-07-14 2009-10-20 Cambridge Semiconductor Limited Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation
JP5298488B2 (ja) * 2007-09-28 2013-09-25 富士電機株式会社 半導体装置
JP2009206268A (ja) * 2008-02-27 2009-09-10 Seiko Instruments Inc 半導体装置及びその製造方法
DE102009033302B4 (de) * 2009-07-15 2012-01-26 Infineon Technologies Ag Herstellungsverfahren für ein unipolares Halbleiter-Bauelement und Halbleitervorrichtung
WO2011083552A1 (ja) * 2010-01-08 2011-07-14 三菱電機株式会社 エピタキシャルウエハ及び半導体素子
CA2777675A1 (en) 2010-01-19 2011-07-28 Sumitomo Electric Industries, Ltd. Silicon carbide semiconductor device and method of manufacturing thereof
JP2011253883A (ja) * 2010-06-01 2011-12-15 On Semiconductor Trading Ltd 半導体装置及びその製造方法
JP6290457B2 (ja) * 2015-01-19 2018-03-07 株式会社日立製作所 半導体装置及びその製造方法、電力変換装置、３相モータシステム、自動車、並びに鉄道車両
JP6822088B2 (ja) * 2016-11-15 2021-01-27 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
EP3627559B1 (de) * 2018-09-19 2022-06-22 Imec Vzw Iii-v-halbleiterbauelement und verfahren zur herstellung eines iii-v-halbleiterbauelements mit einer randabschlussstruktur
JP7075876B2 (ja) 2018-12-25 2022-05-26 株式会社日立製作所 炭化ケイ素半導体装置、電力変換装置、３相モータシステム、自動車および鉄道車両

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EP0537684B1 (de) 1991-10-15 1998-05-20 Texas Instruments Incorporated Lateraler doppel-diffundierter MOS-Transistor und Verfahren zu seiner Herstellung
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
JPH0897411A (ja) * 1994-09-21 1996-04-12 Fuji Electric Co Ltd 横型高耐圧トレンチｍｏｓｆｅｔおよびその製造方法
JP3395473B2 (ja) 1994-10-25 2003-04-14 富士電機株式会社 横型トレンチｍｉｓｆｅｔおよびその製造方法
GB2309336B (en) * 1996-01-22 2001-05-23 Fuji Electric Co Ltd Semiconductor device
JP3641547B2 (ja) 1998-03-25 2005-04-20 株式会社豊田中央研究所 横型ｍｏｓ素子を含む半導体装置
DE19818300C1 (de) * 1998-04-23 1999-07-22 Siemens Ag Lateraler Hochvolt-Seitenwandtransistor
JP3376294B2 (ja) 1998-10-06 2003-02-10 株式会社東芝 半導体装置

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EP1858085A3 (de) 2008-01-23
EP1229591B1 (de) 2008-11-12
WO2001031710A1 (fr) 2001-05-03
US7470960B1 (en) 2008-12-30
EP1858085A2 (de) 2007-11-21
EP1229591A4 (de) 2007-01-03
EP1229591A1 (de) 2002-08-07

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