DE60029554D1 - Halbleiterbauelement mit hochspannungselement - Google Patents

Halbleiterbauelement mit hochspannungselement

Info

Publication number
DE60029554D1
DE60029554D1 DE60029554T DE60029554T DE60029554D1 DE 60029554 D1 DE60029554 D1 DE 60029554D1 DE 60029554 T DE60029554 T DE 60029554T DE 60029554 T DE60029554 T DE 60029554T DE 60029554 D1 DE60029554 D1 DE 60029554D1
Authority
DE
Germany
Prior art keywords
high voltage
semiconductor component
voltage element
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60029554T
Other languages
English (en)
Other versions
DE60029554T2 (de
Inventor
P Meeuwsen
G Huizing
W Ludikhuize
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE60029554D1 publication Critical patent/DE60029554D1/de
Publication of DE60029554T2 publication Critical patent/DE60029554T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
DE60029554T 1999-06-03 2000-05-19 Halbleiterbauelement mit hochspannungselement Expired - Lifetime DE60029554T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP99201760 1999-06-03
EP99201760 1999-06-03
PCT/EP2000/004625 WO2000075989A1 (en) 1999-06-03 2000-05-19 Semiconductor device comprising a high-voltage circuit element

Publications (2)

Publication Number Publication Date
DE60029554D1 true DE60029554D1 (de) 2006-09-07
DE60029554T2 DE60029554T2 (de) 2007-07-12

Family

ID=8240264

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60029554T Expired - Lifetime DE60029554T2 (de) 1999-06-03 2000-05-19 Halbleiterbauelement mit hochspannungselement

Country Status (6)

Country Link
US (1) US6608351B1 (de)
EP (1) EP1116273B1 (de)
JP (1) JP2003501837A (de)
KR (1) KR100722012B1 (de)
DE (1) DE60029554T2 (de)
WO (1) WO2000075989A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6555883B1 (en) * 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6890804B1 (en) * 2003-11-21 2005-05-10 Agere Systems, Inc. Metal-oxide-semiconductor device formed in silicon-on-insulator
US20050274985A1 (en) * 2004-05-26 2005-12-15 Adlerstein Michael G RF decoupled field plate for FETs
US7262476B2 (en) * 2004-11-30 2007-08-28 Agere Systems Inc. Semiconductor device having improved power density
JP4890793B2 (ja) * 2005-06-09 2012-03-07 トヨタ自動車株式会社 半導体装置の製造方法
US7655977B2 (en) * 2005-10-18 2010-02-02 International Rectifier Corporation Trench IGBT for highly capacitive loads
JP5307973B2 (ja) * 2006-02-24 2013-10-02 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置
JP4989085B2 (ja) * 2006-02-24 2012-08-01 オンセミコンダクター・トレーディング・リミテッド 半導体装置及びその製造方法
DE102006033692B4 (de) * 2006-07-20 2011-01-05 Austriamicrosystems Ag Verfahren zur Herstellung eines strukturierten Dielektrikums für einen LDMOS-Transistor
DE102006055742B4 (de) * 2006-11-25 2011-07-14 Infineon Technologies Austria Ag Halbleiterbauelementanordnung mit mehreren zu einer Driftzone benachbart angeordneten Steuerelektroden
JP5699420B2 (ja) * 2008-06-16 2015-04-08 富士電機株式会社 Ｍｏｓ型半導体装置
CN102456578B (zh) * 2010-11-03 2013-09-04 凹凸电子（武汉）有限公司 高压晶体管及其制造方法
US8598679B2 (en) * 2010-11-30 2013-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked and tunable power fuse
JP6014125B2 (ja) 2011-06-03 2016-10-25 ブラームス・インステリング・ボール・テクノロジス・オンデルズーク（フェー・イー・ティ・オゥ）Ｖｌａａｍｓｅ Ｉｎｓｔｅｌｌｉｎｇ Ｖｏｏｒ Ｔｅｃｈｎｏｌｏｇｉｓｃｈ Ｏｎｄｅｒｚｏｅｋ （Ｖｉｔｏ） 熱エネルギを緩衝するための方法およびシステム、ならびに熱エネルギ緩衝器システム
JP5637188B2 (ja) * 2011-09-27 2014-12-10 株式会社デンソー 横型素子を有する半導体装置
CN111211487A (zh) 2012-07-27 2020-05-29 统雷有限公司 量子阱可调谐短腔激光器
GB2511559B (en) 2013-03-07 2018-11-14 Mondelez Uk R&D Ltd Improved Packaging and Method of Forming Packaging
JP5921784B2 (ja) * 2014-01-10 2016-05-24 三菱電機株式会社 半導体装置
JP6710627B2 (ja) * 2016-12-20 2020-06-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1260618A (en) * 1969-08-09 1972-01-19 Soc Gen Semiconduttori Spa Planar junctions with integrated resistor, for high voltages
FR2454233B1 (fr) * 1979-04-11 1986-01-24 Materiel Telephonique Demodulateur stochastique pour signaux modules en sauts de phase, fonctionnant en temps partage sur plusieurs canaux
US4947232A (en) * 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
DE3112467A1 (de) * 1981-03-28 1982-12-30 Robert Bosch Gmbh, 7000 Stuttgart "kraftstoff-einspritzduese fuer brennkraftmaschinen"
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
JPH0653981B2 (ja) * 1987-01-23 1994-07-20 株式会社日立製作所 リング精紡機
US5107323A (en) * 1988-12-22 1992-04-21 At&T Bell Laboratories Protective layer for high voltage devices
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置

Also Published As

Publication number Publication date
KR20010072193A (ko) 2001-07-31
EP1116273A1 (de) 2001-07-18
WO2000075989A1 (en) 2000-12-14
EP1116273B1 (de) 2006-07-26
US6608351B1 (en) 2003-08-19
KR100722012B1 (ko) 2007-05-25
JP2003501837A (ja) 2003-01-14
DE60029554T2 (de) 2007-07-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL