DE60027642D1 - Photoleitfähiger Schalter mit verbesserter Halbleiterstruktur - Google Patents

Photoleitfähiger Schalter mit verbesserter Halbleiterstruktur

Info

Publication number
DE60027642D1
DE60027642D1 DE60027642T DE60027642T DE60027642D1 DE 60027642 D1 DE60027642 D1 DE 60027642D1 DE 60027642 T DE60027642 T DE 60027642T DE 60027642 T DE60027642 T DE 60027642T DE 60027642 D1 DE60027642 D1 DE 60027642D1
Authority
DE
Germany
Prior art keywords
semiconductor structure
improved semiconductor
photoconductive switch
photoconductive
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60027642T
Other languages
English (en)
Other versions
DE60027642T2 (de
Inventor
Thomas S Low
Yasuhisa Kaneko
Mitsuchika Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agilent Technologies Inc
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of DE60027642D1 publication Critical patent/DE60027642D1/de
Application granted granted Critical
Publication of DE60027642T2 publication Critical patent/DE60027642T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
DE60027642T 1999-06-21 2000-05-30 Photoleitfähiger Schalter mit verbesserter Halbleiterstruktur Expired - Fee Related DE60027642T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US337045 1999-06-21
US09/337,045 US6252221B1 (en) 1999-06-21 1999-06-21 Photo-conductive switch having an improved semiconductor structure

Publications (2)

Publication Number Publication Date
DE60027642D1 true DE60027642D1 (de) 2006-06-08
DE60027642T2 DE60027642T2 (de) 2007-05-03

Family

ID=23318876

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60027642T Expired - Fee Related DE60027642T2 (de) 1999-06-21 2000-05-30 Photoleitfähiger Schalter mit verbesserter Halbleiterstruktur

Country Status (4)

Country Link
US (1) US6252221B1 (de)
EP (1) EP1063708B1 (de)
JP (1) JP2001036101A (de)
DE (1) DE60027642T2 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6589335B2 (en) * 2001-02-08 2003-07-08 Amberwave Systems Corporation Relaxed InxGa1-xAs layers integrated with Si
US6403990B1 (en) * 2001-03-27 2002-06-11 Agilent Technologies, Inc. Short turn-off time photoconductive switch
US20030042404A1 (en) * 2001-09-05 2003-03-06 The Boeing Company III-Nitride laser activated semiconductor switch and associated methods of fabrication and operation
US6621071B2 (en) * 2001-09-07 2003-09-16 Raytheon Co. Microelectronic system with integral cryocooler, and its fabrication and use
AU2003202467A1 (en) * 2002-01-07 2003-07-24 Matsushita Electric Industrial Co., Ltd. Surface type optical modulator and its manufacturing method
US6707236B2 (en) 2002-01-29 2004-03-16 Sri International Non-contact electroactive polymer electrodes
US7173295B1 (en) * 2002-06-17 2007-02-06 Sandia Corporation Multi-line triggering and interdigitated electrode structure for photoconductive semiconductor switches
JP2004047560A (ja) * 2002-07-09 2004-02-12 Olympus Corp 光導電スイッチモジュール
JP2004047561A (ja) * 2002-07-09 2004-02-12 Olympus Corp 光導電スイッチモジュールおよびその製造方法
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
JP5126875B2 (ja) * 2006-08-11 2013-01-23 シャープ株式会社 窒化物半導体発光素子の製造方法
JP2008098576A (ja) * 2006-10-16 2008-04-24 Yokogawa Electric Corp 光導電スイッチ
WO2009006318A1 (en) 2007-06-29 2009-01-08 Artificial Muscle, Inc. Electroactive polymer transducers for sensory feedback applications
EP2239793A1 (de) 2009-04-11 2010-10-13 Bayer MaterialScience AG Elektrisch schaltbarer Polymerfilmaufbau und dessen Verwendung
US9240506B2 (en) * 2009-12-08 2016-01-19 Lawrence Livermore National Security, Llc Transparent ceramic photo-optical semiconductor high power switches
US9553254B2 (en) 2011-03-01 2017-01-24 Parker-Hannifin Corporation Automated manufacturing processes for producing deformable polymer devices and films
CN103703404A (zh) 2011-03-22 2014-04-02 拜耳知识产权有限责任公司 电活化聚合物致动器双凸透镜系统
US10490713B2 (en) 2011-09-22 2019-11-26 Sensor Electronic Technology, Inc. Ultraviolet device encapsulant
US9562171B2 (en) * 2011-09-22 2017-02-07 Sensor Electronic Technology, Inc. Ultraviolet device encapsulant
EP2828901B1 (de) 2012-03-21 2017-01-04 Parker Hannifin Corporation Rolle-an-rolle-herstellungsverfahren zur herstellung selbstheilender elektroaktiver polymervorrichtungen
US9761790B2 (en) 2012-06-18 2017-09-12 Parker-Hannifin Corporation Stretch frame for stretching process
US9590193B2 (en) 2012-10-24 2017-03-07 Parker-Hannifin Corporation Polymer diode
US9455366B2 (en) 2013-03-15 2016-09-27 Lawrence Livermore National Security, Llc Sol-gel process for the manufacture of high power switches
US9543462B2 (en) * 2015-03-20 2017-01-10 Xi'an University Of Technology Insulated-gate photoconductive semiconductor switch
CN111129178B (zh) * 2019-12-26 2021-09-07 西安交通大学 一种基于石墨烯界面层的体结构GaAs光导开关及其制备工艺
CN113823700B (zh) * 2021-09-16 2024-03-29 西安交通大学 一种氮化镓光导半导体开关及其制备方法
CN113990967B (zh) * 2021-10-25 2023-04-28 中国工程物理研究院流体物理研究所 一种堆栈结构GaAs光导开关及制作方法和冲激脉冲源

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5216192A (en) * 1975-07-30 1977-02-07 Hitachi Ltd Luminous diode and its producing method
JPS6255969A (ja) * 1985-09-05 1987-03-11 Nec Corp 光導電型半導体受光素子
JPS63100782A (ja) * 1986-10-17 1988-05-02 Nec Corp 半導体受光素子
JPH0716018B2 (ja) * 1987-08-11 1995-02-22 光技術研究開発株式会社 光導電型受光素子
JPS6473683A (en) * 1987-09-14 1989-03-17 Mitsubishi Electric Corp Infrared detection element
EP0543391B1 (de) * 1991-11-22 2000-08-30 Canon Kabushiki Kaisha Photoelektrischer Wandler und Steuerverfahren dafür
JPH08148715A (ja) * 1994-11-15 1996-06-07 Fujitsu Ltd 光半導体装置および半導体光集積回路装置
JP2000183373A (ja) * 1998-12-11 2000-06-30 Mitsubishi Cable Ind Ltd 光導電素子

Also Published As

Publication number Publication date
EP1063708B1 (de) 2006-05-03
EP1063708A2 (de) 2000-12-27
EP1063708A3 (de) 2003-08-13
US6252221B1 (en) 2001-06-26
DE60027642T2 (de) 2007-05-03
JP2001036101A (ja) 2001-02-09

Similar Documents

Publication Publication Date Title
DE60027642D1 (de) Photoleitfähiger Schalter mit verbesserter Halbleiterstruktur
DE60003687D1 (de) Geschirrspülmaschine mit verbesserter architektur
DE60023998D1 (de) Immunoassay
DE60035655D1 (de) Empfangsvorrichtung mit mehrere Tunern
DE69913399D1 (de) Schaltvorrichtung
DE69942942D1 (de) Schaltanordnung
DE60019712D1 (de) Mehrfachschalter
DE60035580D1 (de) Halbleiter
DE59908486D1 (de) Spannungsumschaltvorrichtung
DE50001167D1 (de) Strombegrenzende kontaktanordnung
DE59914556D1 (de) Leistungshalbleiterschalter
DE60016477D1 (de) Schaltungsanordnung mit Schwachstromdetektion
DE69916826D1 (de) Tastschalter
DE60045189D1 (de) Bereichsschaltvorrichtung
DE69911407D1 (de) Schalter
DE60029554D1 (de) Halbleiterbauelement mit hochspannungselement
DE69913400D1 (de) Schaltvorrichtung
DE59908657D1 (de) Spannungsumschaltvorrichtung
DE69908076D1 (de) Schalteranordnung
DE60014989D1 (de) Wasserdichter Schaltvorrichtung
DE60040058D1 (de) Schutzschalter
DE60034297D1 (de) Schalteranordnung
DE69908772D1 (de) Geraet mit kontextumschaltungsfaehigkeit
DE60030391D1 (de) Halbleiterschaltung mit Prüfungsfähigkeit
DE60020285D1 (de) Tastschalter

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D. STAATES, US

8339 Ceased/non-payment of the annual fee