JP5921784B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5921784B2 JP5921784B2 JP2015545537A JP2015545537A JP5921784B2 JP 5921784 B2 JP5921784 B2 JP 5921784B2 JP 2015545537 A JP2015545537 A JP 2015545537A JP 2015545537 A JP2015545537 A JP 2015545537A JP 5921784 B2 JP5921784 B2 JP 5921784B2
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- 239000004065 semiconductor Substances 0.000 title claims description 318
- 229910052751 metal Inorganic materials 0.000 claims description 318
- 239000002184 metal Substances 0.000 claims description 318
- 230000005684 electric field Effects 0.000 claims description 137
- 239000000758 substrate Substances 0.000 claims description 116
- 239000012535 impurity Substances 0.000 claims description 112
- 238000007667 floating Methods 0.000 claims description 77
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- 230000000694 effects Effects 0.000 description 21
- 238000002513 implantation Methods 0.000 description 21
- 230000002441 reversible effect Effects 0.000 description 21
- 230000002829 reductive effect Effects 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 13
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- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
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- 238000009499 grossing Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012887 quadratic function Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
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- 230000000087 stabilizing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
<構成>
図1は、本実施形態に関する半導体装置1の構成を示す平面図である。半導体装置1は、活性領域の形状がシンプルな、縦型のPINダイオードである。図2は、図1の切断面線I−Iから見た終端構造を拡大して示す模式断面図である。
以下では、本実施形態の作用について説明する。
図4は、本実施形態の変形例に関する半導体装置2の終端構造を拡大して示す模式断面図である。
[金属配線31の幅]/[アノードフィールドプレート20と金属配線31の外縁端間距離]
>[金属配線32の幅]/[金属配線31と金属配線32の外縁端間距離]
>[金属配線33の幅]/[金属配線32と金属配線33の外縁端間距離]
>[金属配線34の幅]/[金属配線33と金属配線34の外縁端間距離]
>[金属配線35の幅]/[金属配線34と金属配線35の外縁端間距離]
となっており、
半導体装置2では、
[金属配線41の幅]/[アノードフィールドプレート20と金属配線41の外縁端間距離]
>[金属配線42の幅]/[金属配線41と金属配線42の外縁端間距離]
>[金属配線43の幅]/[金属配線42と金属配線43の外縁端間距離]
>[金属配線44の幅]/[金属配線43と金属配線44の外縁端間距離]
>[金属配線45の幅]/[金属配線44と金属配線45の外縁端間距離]
となっている。
[金属配線35の幅]/[金属配線34と金属配線35の外縁端間距離]
>[金属配線35の幅]/[金属配線35の外縁端からストッパフィールドプレート21の最内縁までの距離]
となっており、
半導体装置2では、
[金属配線45の幅]/[金属配線44と金属配線45の外縁端間距離]
>[金属配線45の幅]/[金属配線45の外縁端からストッパフィールドプレート21の最内縁までの距離]
となっている。これらは換言すると、
[金属配線34と金属配線35との間隔]>[金属配線35とストッパフィールドプレート21との間隔]
[金属配線44と金属配線45との間隔]>[金属配線45とストッパフィールドプレート21との間隔]
ということになる。
[金属配線31の幅]/[アノードフィールドプレート20と金属配線31の外縁端間距離]
>[金属配線32の幅]/[金属配線31と金属配線32の外縁端間距離]
>[金属配線33の幅]/[金属配線32と金属配線33の外縁端間距離]
=[金属配線34bの幅]/[金属配線33と金属配線34bの外縁端間距離]
=[金属配線35bの幅]/[金属配線34bと金属配線35bの外縁端間距離]
となっており、
半導体装置2bでは、
[金属配線41の幅]/[アノードフィールドプレート20と金属配線41の外縁端間距離]
>[金属配線42の幅]/[金属配線41と金属配線42の外縁端間距離]
>[金属配線43の幅]/[金属配線42と金属配線43の外縁端間距離]
=[金属配線44bの幅]/[金属配線43と金属配線44bの外縁端間距離]
=[金属配線45bの幅]/[金属配線44bと金属配線45bの外縁端間距離]
となっている。
次に、本実施形態の半導体装置1及び半導体装置1aを、6500Vクラスの耐圧を有するSiの縦型PINダイオードに適用した場合の効果について、図8及び図9に示されるシミュレーション結果を用いて説明する。
W1/D1>W2/D2>W3/D3>W4/D4>W5/D5
の関係を満たす。
<構成>
図10は、本実施形態における半導体装置3の終端構造を拡大して示す模式断面図である。
LNFLR59の注入量はリサーフ条件の2.5倍程度が最適である。ただし、注入量がリサーフ条件のおよそ1.5倍以上3.5倍以下の範囲であれば、十分に高い耐圧を得ることができる。
図13は、本実施形態の変形例における半導体装置4の終端構造を拡大して示す模式断面図である。
次に、本実施形態の半導体装置3bを、6500Vクラスの耐圧を有するSiの縦型PINダイオードに適用した場合の効果について、図14及び図15に示されるシミュレーション結果を用いて説明する。
第1実施形態及び第2実施形態では、本発明を縦型デバイスに適用した形態について述べたが、本発明は基板表面に対して平行に電流を流す半導体装置、すなわち、横型デバイスにも適用できる。横型デバイスにおいても、3300V以上の耐圧を実現するには、VLD層のような電界緩和層が必要である。
Claims (3)
- 第1導電型の半導体基板と、
前記半導体基板表面において部分的に形成された活性領域と、
前記半導体基板表面において、前記活性領域に接触し、かつ、前記活性領域を囲んで形成された第2導電型の不純物を含有する電界緩和層と、
前記活性領域の一部及び前記電界緩和層を覆って形成された絶縁膜と、
前記絶縁膜上の一部及び前記活性領域上に跨がって形成された第1電極と、
前記電界緩和層が形成された位置の少なくとも一部に対応する前記絶縁膜上の位置において形成され、かつ、浮遊電位を有する複数の金属層とを備え、
複数の前記金属層が、前記第1電極から離れる方向において互いに離間し、かつ、それぞれが前記第1電極を囲んで形成され、
前記絶縁膜上及び前記半導体基板上に跨がって形成され、かつ、複数の前記金属層を囲んで配置された第2電極と、
前記第1電極から前記第2電極に亘る前記絶縁膜上に形成された半絶縁膜とを備え、
前記電界緩和層が、前記活性領域から離れる方向に延びて形成され、かつ、含有する第2導電型の不純物の空間電荷量が前記活性領域から離れるにつれて減少し、
前記電界緩和層が、前記活性領域から離れる方向において互いに離間して形成された複数の層構造からなり、
各前記金属層が、各前記層構造が形成された位置の一部に対応する前記絶縁膜上の位置においてのみ形成されており、
各前記金属層の前記第1電極から離れる方向の幅をW、
各前記金属層の前記第2電極に近い側の端部である外縁端部と、前記第1電極に近づく方向において当該金属層と隣り合って配置された前記第1電極又は他の前記金属層の前記外縁端部との間の距離をDとした場合、
各前記金属層に関するW/Dが、前記第1電極から離れるにつれて小さくなり、
各前記金属層に関するWが、前記第1電極から離れるにつれて小さくなる、
半導体装置。 - 各前記金属層に関するDが、前記第1電極から離れるにつれて大きくなる、
請求項1に記載の半導体装置。 - 各前記金属層に関する前記Wのうち、前記第2電極に近い側の一部の各前記金属層に関する前記Wが一定である、
請求項1に記載の半導体装置。
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