DE60104944D1 - Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung - Google Patents
Wärmeleitende Siliconzusammensetzung und HalbleiteranordnungInfo
- Publication number
- DE60104944D1 DE60104944D1 DE60104944T DE60104944T DE60104944D1 DE 60104944 D1 DE60104944 D1 DE 60104944D1 DE 60104944 T DE60104944 T DE 60104944T DE 60104944 T DE60104944 T DE 60104944T DE 60104944 D1 DE60104944 D1 DE 60104944D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- thermally conductive
- silicone composition
- conductive silicone
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M111/00—Lubrication compositions characterised by the base-material being a mixture of two or more compounds covered by more than one of the main groups C10M101/00 - C10M109/00, each of these compounds being essential
- C10M111/04—Lubrication compositions characterised by the base-material being a mixture of two or more compounds covered by more than one of the main groups C10M101/00 - C10M109/00, each of these compounds being essential at least one of them being a macromolecular organic compound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/54—Silicon-containing compounds
- C08K5/541—Silicon-containing compounds containing oxygen
- C08K5/5415—Silicon-containing compounds containing oxygen containing at least one Si—O bond
- C08K5/5419—Silicon-containing compounds containing oxygen containing at least one Si—O bond containing at least one Si—C bond
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0812—Aluminium
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2296—Oxides; Hydroxides of metals of zinc
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/04—Elements
- C10M2201/05—Metals; Alloys
- C10M2201/053—Metals; Alloys used as base material
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2201/00—Inorganic compounds or elements as ingredients in lubricant compositions
- C10M2201/06—Metal compounds
- C10M2201/062—Oxides; Hydroxides; Carbonates or bicarbonates
- C10M2201/0623—Oxides; Hydroxides; Carbonates or bicarbonates used as base material
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2207/00—Organic non-macromolecular hydrocarbon compounds containing hydrogen, carbon and oxygen as ingredients in lubricant compositions
- C10M2207/02—Hydroxy compounds
- C10M2207/021—Hydroxy compounds having hydroxy groups bound to acyclic or cycloaliphatic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2227/00—Organic non-macromolecular compounds containing atoms of elements not provided for in groups C10M2203/00, C10M2207/00, C10M2211/00, C10M2215/00, C10M2219/00 or C10M2223/00 as ingredients in lubricant compositions
- C10M2227/04—Organic non-macromolecular compounds containing atoms of elements not provided for in groups C10M2203/00, C10M2207/00, C10M2211/00, C10M2215/00, C10M2219/00 or C10M2223/00 as ingredients in lubricant compositions having a silicon-to-carbon bond, e.g. organo-silanes
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2229/00—Organic macromolecular compounds containing atoms of elements not provided for in groups C10M2205/00, C10M2209/00, C10M2213/00, C10M2217/00, C10M2221/00 or C10M2225/00 as ingredients in lubricant compositions
- C10M2229/04—Siloxanes with specific structure
- C10M2229/043—Siloxanes with specific structure containing carbon-to-carbon double bonds
- C10M2229/0435—Siloxanes with specific structure containing carbon-to-carbon double bonds used as base material
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10M—LUBRICATING COMPOSITIONS; USE OF CHEMICAL SUBSTANCES EITHER ALONE OR AS LUBRICATING INGREDIENTS IN A LUBRICATING COMPOSITION
- C10M2229/00—Organic macromolecular compounds containing atoms of elements not provided for in groups C10M2205/00, C10M2209/00, C10M2213/00, C10M2217/00, C10M2221/00 or C10M2225/00 as ingredients in lubricant compositions
- C10M2229/04—Siloxanes with specific structure
- C10M2229/044—Siloxanes with specific structure containing silicon-to-hydrogen bonds
- C10M2229/0445—Siloxanes with specific structure containing silicon-to-hydrogen bonds used as base material
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2010/00—Metal present as such or in compounds
- C10N2010/16—Groups 8, 9, or 10
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2040/00—Specified use or application for which the lubricating composition is intended
- C10N2040/14—Electric or magnetic purposes
-
- C—CHEMISTRY; METALLURGY
- C10—PETROLEUM, GAS OR COKE INDUSTRIES; TECHNICAL GASES CONTAINING CARBON MONOXIDE; FUELS; LUBRICANTS; PEAT
- C10N—INDEXING SCHEME ASSOCIATED WITH SUBCLASS C10M RELATING TO LUBRICATING COMPOSITIONS
- C10N2050/00—Form in which the lubricant is applied to the material being lubricated
- C10N2050/10—Semi-solids; greasy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Computer Hardware Design (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000189821A JP3580358B2 (ja) | 2000-06-23 | 2000-06-23 | 熱伝導性シリコーン組成物及び半導体装置 |
JP2000189821 | 2000-06-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60104944D1 true DE60104944D1 (de) | 2004-09-23 |
DE60104944T2 DE60104944T2 (de) | 2005-09-01 |
Family
ID=18689405
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60104944T Expired - Lifetime DE60104944T2 (de) | 2000-06-23 | 2001-06-25 | Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6555905B2 (de) |
EP (1) | EP1167457B1 (de) |
JP (1) | JP3580358B2 (de) |
DE (1) | DE60104944T2 (de) |
Families Citing this family (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7060747B2 (en) | 2001-03-30 | 2006-06-13 | Intel Corporation | Chain extension for thermal materials |
JP4796704B2 (ja) * | 2001-03-30 | 2011-10-19 | 株式会社タイカ | 押出可能な架橋済グリース状放熱材を充填・封入した容器の製法 |
JP3580366B2 (ja) * | 2001-05-01 | 2004-10-20 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物及び半導体装置 |
JP4588285B2 (ja) * | 2002-01-25 | 2010-11-24 | 信越化学工業株式会社 | 熱伝導性シリコーンゴム組成物 |
US7195720B2 (en) * | 2002-02-20 | 2007-03-27 | Kaneka Corporation | Curable composition for heat conductive material |
JP4130091B2 (ja) * | 2002-04-10 | 2008-08-06 | 信越化学工業株式会社 | 放熱用シリコーングリース組成物 |
JP3932125B2 (ja) * | 2003-08-14 | 2007-06-20 | 信越化学工業株式会社 | 熱軟化性熱伝導性部材 |
JP2005064291A (ja) * | 2003-08-14 | 2005-03-10 | Nissan Motor Co Ltd | 絶縁シートおよびこの絶縁シートを用いた半導体装置組立体 |
FR2860340B1 (fr) * | 2003-09-30 | 2006-01-27 | Soitec Silicon On Insulator | Collage indirect avec disparition de la couche de collage |
JP4219793B2 (ja) * | 2003-11-25 | 2009-02-04 | 信越化学工業株式会社 | 放熱用シリコーングリース組成物 |
JP2005330426A (ja) * | 2004-05-21 | 2005-12-02 | Shin Etsu Chem Co Ltd | 放熱用シリコーングリース組成物 |
TWI385246B (zh) * | 2004-05-21 | 2013-02-11 | Shinetsu Chemical Co | 聚矽氧烷潤滑油組成物 |
JP4687887B2 (ja) * | 2004-10-14 | 2011-05-25 | 信越化学工業株式会社 | 熱伝導性シリコーングリース組成物 |
DE102004053309B3 (de) | 2004-11-04 | 2006-03-02 | Wacker-Chemie Gmbh | Wärmeleitfähige und mikrowellenaktive Lebensmittelformen |
JP4942978B2 (ja) * | 2005-09-30 | 2012-05-30 | モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 | 熱伝導性シリコーングリース組成物及びそれを用いた半導体装置 |
CN1986643B (zh) * | 2005-12-23 | 2010-05-12 | 富准精密工业(深圳)有限公司 | 硅脂组合物 |
JP4933094B2 (ja) * | 2005-12-27 | 2012-05-16 | 信越化学工業株式会社 | 熱伝導性シリコーングリース組成物 |
CN101003685A (zh) * | 2006-01-18 | 2007-07-25 | 富准精密工业(深圳)有限公司 | 导热聚硅氧烷组合物 |
US20070219312A1 (en) * | 2006-03-17 | 2007-09-20 | Jennifer Lynn David | Silicone adhesive composition and method for preparing the same |
KR100722464B1 (ko) | 2006-07-14 | 2007-05-28 | 주식회사 두산 | 패키징용 게터, 고활성 산화칼슘, 및 고활성 산화칼슘의제조방법 |
US20080166552A1 (en) * | 2006-11-06 | 2008-07-10 | Arlon, Inc. | Silicone based compositions for thermal interface materials |
JP2007150349A (ja) * | 2007-02-09 | 2007-06-14 | Shin Etsu Chem Co Ltd | 熱軟化性熱伝導性部材 |
JP5168732B2 (ja) * | 2007-09-21 | 2013-03-27 | 信越化学工業株式会社 | 変位耐久性を有する硬化物を与えるシリコーンゲル組成物 |
JP5093488B2 (ja) * | 2008-04-15 | 2012-12-12 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物及び接着構造体並びに半導体装置 |
JP5105308B2 (ja) * | 2008-06-04 | 2012-12-26 | 信越化学工業株式会社 | 低温加熱時における硬化速度を促進した熱伝導性シリコーン組成物 |
JP6014299B2 (ja) * | 2008-09-01 | 2016-10-25 | 東レ・ダウコーニング株式会社 | 熱伝導性シリコーン組成物及び半導体装置 |
US8440312B2 (en) | 2009-03-12 | 2013-05-14 | Dow Corning Corporation | Thermal interface materials and methods for their preparation and use |
JP2011138857A (ja) * | 2009-12-28 | 2011-07-14 | Shin-Etsu Chemical Co Ltd | 放熱性及びリワーク性に優れる電子装置の製造方法及び電子装置 |
CN102844383B (zh) | 2010-04-02 | 2016-01-20 | 株式会社钟化 | 固化性树脂组合物、固化性树脂组合物片、成型体、半导体封装材料、半导体部件及发光二极管 |
JP2012107096A (ja) * | 2010-11-16 | 2012-06-07 | Kaneka Corp | 熱伝導性硬化性樹脂組成物及び硬化性樹脂成形体 |
JP2012052137A (ja) * | 2011-11-28 | 2012-03-15 | Shin-Etsu Chemical Co Ltd | 熱伝導性シリコーングリース組成物 |
EP2821456A4 (de) * | 2012-03-02 | 2015-12-16 | Fuji Polymer Ind | Kittartiges wärmeübertragungsmaterial und verfahren zur herstellung davon |
EP2848677B1 (de) * | 2012-05-11 | 2016-12-28 | Shin-Etsu Chemical Co., Ltd. | Wärmeleitfähige silikonschmierzusammensetzung |
JP2014080522A (ja) * | 2012-10-17 | 2014-05-08 | Shin Etsu Chem Co Ltd | 熱伝導性樹脂組成物 |
JP5898139B2 (ja) * | 2013-05-24 | 2016-04-06 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物 |
JP5947267B2 (ja) | 2013-09-20 | 2016-07-06 | 信越化学工業株式会社 | シリコーン組成物及び熱伝導性シリコーン組成物の製造方法 |
WO2015092889A1 (ja) * | 2013-12-18 | 2015-06-25 | ポリマテック・ジャパン株式会社 | 硬化型熱伝導性グリス、放熱構造および放熱構造の製造方法 |
JP6023737B2 (ja) * | 2014-03-18 | 2016-11-09 | 信越化学工業株式会社 | ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法 |
CN104098915A (zh) * | 2014-07-23 | 2014-10-15 | 赵雪雅 | 一种改性硅胶材料、其制备方法以及用途 |
CN104387642B (zh) * | 2014-09-25 | 2016-12-28 | 李准 | 一种微流控芯片模具 |
JP6436035B2 (ja) * | 2015-09-25 | 2018-12-12 | 信越化学工業株式会社 | 熱軟化性熱伝導性シリコーングリース組成物、熱伝導性被膜の形成方法、放熱構造及びパワーモジュール装置 |
TWI738743B (zh) * | 2016-03-23 | 2021-09-11 | 美商道康寧公司 | 金屬-聚有機矽氧烷 |
CA3049130A1 (en) | 2017-02-08 | 2018-08-16 | Elkem Silicones USA Corp. | Secondary battery pack with improved thermal management |
WO2019004150A1 (ja) * | 2017-06-27 | 2019-01-03 | 積水ポリマテック株式会社 | 熱伝導性シート |
CN108912689A (zh) * | 2018-07-17 | 2018-11-30 | 德阳中碳新材料科技有限公司 | 一种导热界面材料的制备方法 |
KR102326677B1 (ko) * | 2018-10-12 | 2021-11-15 | 주식회사 엘지화학 | 방열 패드용 조성물 및 이의 경화물을 포함하는 방열 패드 |
CN111117576A (zh) * | 2019-12-30 | 2020-05-08 | 江智秦 | 一种硅胶垫的制备方法 |
WO2023143728A1 (de) | 2022-01-28 | 2023-08-03 | Wacker Chemie Ag | Aluminiumhaltige wärmeleitpasten |
WO2023162636A1 (ja) * | 2022-02-28 | 2023-08-31 | 信越化学工業株式会社 | 熱伝導性シリコーン組成物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61157569A (ja) | 1984-12-28 | 1986-07-17 | Shin Etsu Polymer Co Ltd | 熱伝導性接着組成物 |
TW218887B (de) * | 1991-01-24 | 1994-01-11 | Shinetsu Chem Ind Co | |
JPH08208993A (ja) | 1995-11-27 | 1996-08-13 | Toshiba Silicone Co Ltd | 熱伝導性シリコーン組成物 |
JP4015722B2 (ja) * | 1997-06-20 | 2007-11-28 | 東レ・ダウコーニング株式会社 | 熱伝導性ポリマー組成物 |
JP3948642B2 (ja) * | 1998-08-21 | 2007-07-25 | 信越化学工業株式会社 | 熱伝導性グリース組成物及びそれを使用した半導体装置 |
-
2000
- 2000-06-23 JP JP2000189821A patent/JP3580358B2/ja not_active Expired - Lifetime
-
2001
- 2001-06-25 EP EP01305496A patent/EP1167457B1/de not_active Expired - Lifetime
- 2001-06-25 DE DE60104944T patent/DE60104944T2/de not_active Expired - Lifetime
- 2001-06-25 US US09/887,266 patent/US6555905B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20020014692A1 (en) | 2002-02-07 |
DE60104944T2 (de) | 2005-09-01 |
EP1167457A3 (de) | 2002-09-11 |
US6555905B2 (en) | 2003-04-29 |
JP3580358B2 (ja) | 2004-10-20 |
JP2002003718A (ja) | 2002-01-09 |
EP1167457A2 (de) | 2002-01-02 |
EP1167457B1 (de) | 2004-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60104944D1 (de) | Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung | |
DE60200630D1 (de) | Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung | |
DE60130065D1 (de) | Elektronisches Bauteil und Halbleitervorrichtung | |
DE69920357D1 (de) | Wärmeleitende Schmiermittelzusammensetzung und damit ausgerüstete Halbleitervorrichtung | |
DE60141060D1 (de) | Siliconzusammensetzung und elektrisch leitfähiger vernetzter Silicongegenstand | |
DE60036594D1 (de) | Feldeffekt-Halbleiterbauelement | |
DE60107020D1 (de) | Silikonzusammensetzung und elektrisch leitfähige Silikonklebstoff | |
DE60019913D1 (de) | Halbleiterbauelement und Herstellungsverfahren | |
DE60232480D1 (de) | Hochspannungs-Halbleiterbauelement | |
DE60227302D1 (de) | Photovoltaisches Element und photovoltaische Vorrichtung | |
DE60043326D1 (de) | Halbleiterspeicheranordnung und elektronisches Gerät | |
DE60215105D1 (de) | Wärmeleitfähige vernetzbare Silikonzusammensetzung sowie eine wärmeableitende Halbleiterstruktur | |
DE10196595T1 (de) | Vorrichtung und Halbleiter-Prüfvorrichtung | |
DE69942813D1 (de) | Halbleitervorrichtung | |
DE60142141D1 (de) | Halbleiterbauelement | |
DE60111433D1 (de) | Lötverfahren und Lötvorrichtung | |
DE60005959D1 (de) | Halbleiteranordnung | |
DE60229938D1 (de) | ENTWICKLUNGSEINRICHTUNG UND BILDformungsgerät | |
DE60229740D1 (de) | Kontakthülse und durchkoppelgerät | |
DE60226661D1 (de) | Induktives Element und Halbleiterbauelement | |
DE60133429D1 (de) | Verdrahtungssubstrat, seine Herstellung und Halbleiterbauteil | |
DE10191585B8 (de) | Halbleitervorrichtung | |
DE60223894D1 (de) | Halbleiterspeicheranordung und Informationgerät | |
EP1164640A4 (de) | Halbleiterbauelement und dessen herstelllung | |
DE60008047D1 (de) | Feldeffekt-Halbleiteranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |