DE60200630D1 - Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung - Google Patents

Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung

Info

Publication number
DE60200630D1
DE60200630D1 DE60200630T DE60200630T DE60200630D1 DE 60200630 D1 DE60200630 D1 DE 60200630D1 DE 60200630 T DE60200630 T DE 60200630T DE 60200630 T DE60200630 T DE 60200630T DE 60200630 D1 DE60200630 D1 DE 60200630D1
Authority
DE
Germany
Prior art keywords
semiconductor device
thermally conductive
silicone composition
conductive silicone
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60200630T
Other languages
English (en)
Other versions
DE60200630T2 (de
Inventor
Kunihiro Yamada
Kenichi Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE60200630D1 publication Critical patent/DE60200630D1/de
Publication of DE60200630T2 publication Critical patent/DE60200630T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/0812—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2296—Oxides; Hydroxides of metals of zinc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE2002600630 2001-05-01 2002-04-29 Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung Expired - Lifetime DE60200630T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001133895A JP3580366B2 (ja) 2001-05-01 2001-05-01 熱伝導性シリコーン組成物及び半導体装置
JP2001133895 2001-05-01

Publications (2)

Publication Number Publication Date
DE60200630D1 true DE60200630D1 (de) 2004-07-22
DE60200630T2 DE60200630T2 (de) 2005-06-30

Family

ID=18981678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002600630 Expired - Lifetime DE60200630T2 (de) 2001-05-01 2002-04-29 Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung

Country Status (5)

Country Link
US (1) US6649258B2 (de)
EP (1) EP1254924B1 (de)
JP (1) JP3580366B2 (de)
DE (1) DE60200630T2 (de)
TW (1) TWI303261B (de)

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JP5843368B2 (ja) * 2013-05-07 2016-01-13 信越化学工業株式会社 熱伝導性シリコーン組成物及びその硬化物
JP5898139B2 (ja) 2013-05-24 2016-04-06 信越化学工業株式会社 熱伝導性シリコーン組成物
JP5947267B2 (ja) 2013-09-20 2016-07-06 信越化学工業株式会社 シリコーン組成物及び熱伝導性シリコーン組成物の製造方法
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KR102410261B1 (ko) 2014-09-25 2022-06-17 신에쓰 가가꾸 고교 가부시끼가이샤 자외선 증점형 열전도성 실리콘 그리스 조성물
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JP6465037B2 (ja) 2016-01-07 2019-02-06 信越化学工業株式会社 縮合硬化反応と有機過酸化物硬化反応を併用したシリコーン組成物
KR102554661B1 (ko) * 2016-03-08 2023-07-13 허니웰 인터내셔널 인코포레이티드 상 변화 물질
JP6642145B2 (ja) 2016-03-14 2020-02-05 信越化学工業株式会社 付加一液加熱硬化型熱伝導性シリコーングリース組成物の硬化物の製造方法
WO2018079215A1 (ja) 2016-10-31 2018-05-03 東レ・ダウコーニング株式会社 １液硬化型熱伝導性シリコーングリース組成物及び電子・電装部品
JP6874366B2 (ja) * 2016-12-28 2021-05-19 信越化学工業株式会社 シリコーン組成物およびその硬化物
WO2018139506A1 (ja) 2017-01-27 2018-08-02 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 熱伝導性ポリオルガノシロキサン組成物
JP6383885B2 (ja) 2017-01-27 2018-08-29 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 熱伝導性ポリオルガノシロキサン組成物
EP4243143A3 (de) 2017-02-08 2023-11-01 Elkem Silicones USA Corp. Sekundärbatteriepack mit verbesserter thermischer verwaltung
KR102625362B1 (ko) 2017-07-24 2024-01-18 다우 도레이 캄파니 리미티드 열전도성 실리콘 겔 조성물, 열전도성 부재 및 방열 구조체
WO2019138991A1 (ja) 2018-01-15 2019-07-18 信越化学工業株式会社 シリコーン組成物
WO2019181713A1 (ja) 2018-03-23 2019-09-26 信越化学工業株式会社 シリコーン組成物
JP6959950B2 (ja) 2019-03-04 2021-11-05 信越化学工業株式会社 非硬化型熱伝導性シリコーン組成物
KR20210148204A (ko) * 2019-03-29 2021-12-07 다우 도레이 캄파니 리미티드 다성분형 열전도성 실리콘 겔 조성물, 열전도성 부재 및 방열 구조체
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WO2021184149A1 (en) * 2020-03-16 2021-09-23 Dow Silicones Corporation Thermal conductive silicone composition
JP2023539780A (ja) * 2020-09-07 2023-09-19 ワッカー ケミー アクチエンゲゼルシャフト ハイドロジェンポリオルガノシロキサン及びその熱伝導性シリコーン組成物
JP2023550866A (ja) * 2020-09-23 2023-12-06 ダウ グローバル テクノロジーズ エルエルシー 分配粘度が低く、分配後の鉛直流が少なく、硬化後の熱インピーダンスが低い熱界面材料
CN116997613A (zh) 2022-01-28 2023-11-03 瓦克化学股份公司 含铝导热膏
JP2023173096A (ja) * 2022-05-25 2023-12-07 信越化学工業株式会社 絶縁性熱伝導シート

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DE60200630T2 (de) 2005-06-30
US20030049466A1 (en) 2003-03-13
US6649258B2 (en) 2003-11-18
JP3580366B2 (ja) 2004-10-20
JP2002327116A (ja) 2002-11-15
TWI303261B (de) 2008-11-21
EP1254924B1 (de) 2004-06-16

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