TWI285675B - Heat conductive grease and semiconductor device - Google Patents

Heat conductive grease and semiconductor device Download PDF

Info

Publication number
TWI285675B
TWI285675B TW094144809A TW94144809A TWI285675B TW I285675 B TWI285675 B TW I285675B TW 094144809 A TW094144809 A TW 094144809A TW 94144809 A TW94144809 A TW 94144809A TW I285675 B TWI285675 B TW I285675B
Authority
TW
Taiwan
Prior art keywords
heat
thermal
hydrogen
paste according
mass
Prior art date
Application number
TW094144809A
Other languages
Chinese (zh)
Other versions
TW200724661A (en
Inventor
Ching-Tai Cheng
Nien-Tien Cheng
Original Assignee
Foxconn Tech Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Foxconn Tech Co Ltd filed Critical Foxconn Tech Co Ltd
Priority to TW094144809A priority Critical patent/TWI285675B/en
Priority to US11/309,463 priority patent/US20070151416A1/en
Publication of TW200724661A publication Critical patent/TW200724661A/en
Application granted granted Critical
Publication of TWI285675B publication Critical patent/TWI285675B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737Organic materials with or without a thermoconductive filler
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors

Abstract

A heat conductive grease filled in spaces formed between a heat-generating electric component and a heat-dissipating component, for transferring heat generated by the heat-generating electric component to the heat-dissipating component. The heat conductive grease includes 8 to 11 weight % of base oil and 89 to 92 weight % of filler. The base oil includes an organopolysiloxane containing at least two alkenyl groups, an organo-hydrogenpolysiloxane having at least a Si-H group on side chain and a polyorganohydrogensiloxane containing at least three Si-bonded hydrogen.

Description

1285675 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種導熱膏及使用該導熱膏的電子裝置。 【先前技術】 為解決發熱電子元件的散熱問題,人們通常在發熱電子元件上部 設置散熱器等散熱元件,藉由該散熱元件之較大的散熱面積,將發熱 電子元件產生之熱量散發出去。 為使散熱元件能快速地將發熱電子元件產生之熱量散發出去,發 熱電子元件與散熱元件間需具有良好的熱傳遞,即發熱電子元件與散 熱元件間應具有較小的接觸熱阻,然而,由於生產條件及生產成本的 >限制,發熱電子元件與散熱元件之接觸面並非完全平整的表面,故兩 者貼合時,其接觸面無法完全接觸而存在空氣間隙,而空氣的導熱係 數很低,一般約為a〇25W/(m.°C)左右,嚴重影響整體之散熱效果,為 此,一般於散熱元件與發熱電子元件之間塗佈熱介面材料,以填補散 熱元件與發熱電子元件間的空氣間隙,減小介面熱阻,提昇散熱效果, 以保證發熱電子元件的正常運作。 在現有熱介面材料中,導熱膏由於具有較低的熱阻而被廣泛應 用’然而導熱膏在長期使用下會發生溢油現象,給電子元件的散熱造 成不良影響。 【發明内容】 ^發明以具體實施例說明一種可改善溢油現象的導熱膏及使用該 導熱膏的電子裝置。 一種導熱膏,可填充於一發熱電子元件與一用於對該發熱電子元 件散熱的散熱元件之間,該導熱膏包括佔8~11%質量百分比的基體及 填充於基體内的熱導填充物,該熱導填充物的質量佔導熱膏質量的 =〜92% ’該基體包括含有矽氫鍵的含氫有機聚矽氧烷及含氫聚有機矽 氧烷中至少一種,以及含有烯基的有機聚矽氧烷。 該導熱膏利用含有矽氫鍵的含氫有機聚矽氧烷、含氫聚有機矽氧 1285675 烷及含有烯基的有機聚矽氧烷作為基體,該三種物質在催化劑的作用 下可發生反應,生成交聯成網狀的交聯產物,該交聯產物可降低該導 熱貧在咼溫下的流動現象,並可改善導熱膏的溢油問題。 【實施方式】 下面參照附圖結合實施例對本發明作進一步說明。1285675 IX. Description of the Invention: [Technical Field] The present invention relates to a thermal conductive paste and an electronic device using the same. [Prior Art] In order to solve the heat dissipation problem of the heat-generating electronic component, a heat dissipating component such as a heat sink is usually disposed on the upper portion of the heat-generating electronic component, and the heat generated by the heat-generating electronic component is radiated by the large heat-dissipating area of the heat-dissipating component. In order to enable the heat dissipating component to quickly dissipate the heat generated by the heat-generating electronic component, a good heat transfer between the heat-generating electronic component and the heat-dissipating component is required, that is, there should be a small contact thermal resistance between the heat-generating electronic component and the heat-dissipating component. Due to the limitation of production conditions and production cost, the contact surface of the heat-generating electronic component and the heat-dissipating component is not a completely flat surface, so when the two are bonded, the contact surface cannot be completely contacted and there is an air gap, and the thermal conductivity of the air is very high. Low, generally about a〇25W/(m.°C), which seriously affects the overall heat dissipation effect. For this reason, a thermal interface material is generally applied between the heat dissipating component and the heat generating electronic component to fill the heat dissipating component and the heat generating electron. The air gap between the components reduces the thermal resistance of the interface and improves the heat dissipation effect to ensure the normal operation of the heating electronic components. Among the existing thermal interface materials, the thermal paste is widely used because of its low thermal resistance. However, the thermal grease may cause oil spillage during long-term use, which adversely affects the heat dissipation of the electronic component. SUMMARY OF THE INVENTION The invention describes, by way of specific embodiments, a thermally conductive paste which can improve oil spillage and an electronic device using the same. A thermal conductive paste can be filled between a heat-generating electronic component and a heat-dissipating component for dissipating heat to the heat-generating electronic component, wherein the thermal conductive paste comprises a matrix of 8 to 11% by mass and a thermal conductive filler filled in the substrate The mass of the thermal conductive filler is ~92% of the mass of the thermal conductive paste. The substrate comprises at least one of a hydrogen-containing organic polyoxyalkylene containing a hydrogen bond and a hydrogen-containing polyorganosiloxane, and an alkenyl group. Organic polyoxyalkylene. The thermal conductive paste utilizes a hydrogen-containing organic polyoxane containing a hydrogen bond, a hydrogen-containing polyorganofluorene 1285756 alkane, and an alkenyl-containing organopolyoxyalkylene as a matrix, and the three substances can react under the action of a catalyst. The crosslinked product which is crosslinked into a network is formed, and the crosslinked product can reduce the flow phenomenon of the heat conduction and the lean temperature, and can improve the oil spill problem of the thermal paste. [Embodiment] Hereinafter, the present invention will be further described with reference to the accompanying drawings.

如第一圖所示,該使用導熱膏的電子裝置10包括一設於電路板u 上的發熱電子元件12、一用於對該發熱電子元件12散熱的散熱元件 13及填充於發熱電子元件12與散熱元件13間之導熱膏14。該散熱元 件13包括一基板131及設於基板131上的複數散熱鰭片133。該散熱 元件13藉由一固定元件15固定至電路板^上,並向下按壓該導熱膏 14 ’使該導熱膏14充分填充於發熱電子元件12與散熱元件13之基板 131間的空隙内,降低該發熱電子元件12與散熱元件13的接觸熱阻, 使該發熱電子元件12與該散熱元件13間存在良好的熱傳遞。 該導熱膏具有較小的熱阻,包括基體及填充於基體内的熱導填充 物。 基體的質量約佔導熱膏總質量的8~11%,該基體包括含氫有機聚 石夕氧烧(organo-hydrogenpolysiloxane)、含氫聚有機石夕氧院 &〇17〇1^11〇117(11:(^118〖1〇^116)及有機聚發氧烧(〇职11(^〇1)^1〇\〇116)〇其 中’含氫有機聚矽氧烷之結構式可為: 〒3 CH3 — Si一〇_ CH3 一 Η 1 — ch3 1 1 --Si-〇 - 1 • Si-〇 CH3 1— 一 a 1 0¾ ch3 -Si- b 上,結構式中,a〇i<a/(a+b)<0.4,該含氫有機聚矽氧烷包括至少 一個矽氫基(Si-H group),該H原子位於含氫有機聚矽氧烷之結構式的 側鍵上。 含氫聚有機矽氧烷之結構式為: 1285675 f f H-Si-O-Si-CCUt), Ο Θ 1 l 嘯务§卜|| I 擊 Me He CI>As shown in the first figure, the electronic device 10 using the thermal paste includes a heat-generating electronic component 12 disposed on the circuit board u, a heat dissipating component 13 for dissipating heat to the heat-generating electronic component 12, and a heat-dissipating component 12 Thermal paste 14 between the heat dissipating component 13. The heat dissipating component 13 includes a substrate 131 and a plurality of heat dissipation fins 133 disposed on the substrate 131. The heat dissipating component 13 is fixed to the circuit board by a fixing component 15 and presses the thermal conductive paste 14 ′ downward to fully fill the gap between the heat generating electronic component 12 and the substrate 131 of the heat dissipating component 13 . The thermal resistance of contact between the heat-generating electronic component 12 and the heat-dissipating component 13 is lowered, so that there is good heat transfer between the heat-generating electronic component 12 and the heat-dissipating component 13. The thermal paste has a small thermal resistance, including a substrate and a thermally conductive filler filled in the substrate. The mass of the matrix accounts for about 8-11% of the total mass of the thermal paste. The matrix includes hydrogen-containing organopolyhydrogen polysiloxane, hydrogen-containing polyorganisms, and 〇17〇1^11〇117 (11: (^118〖1〇^116) and organic polyoxygenation (〇职11(^〇1)^1〇\〇116)) The structural formula of 'hydrogen-containing organopolyoxyalkylene can be: 〒3 CH3 — Si 〇 _ CH3 Η 1 — ch3 1 1 --Si-〇- 1 • Si-〇CH3 1—one a 1 03⁄4 ch3 -Si- b, in the structural formula, a〇i<a / (a + b) < 0.4, the hydrogen-containing organopolyoxyalkylene oxide includes at least one hydrogen group (Si-H group) which is located on a side bond of a structural formula containing a hydrogen-containing organopolyoxyalkylene. The structural formula of the hydrogen-containing polyorganosiloxane is: 1285675 ff H-Si-O-Si-CCUt), Ο Θ 1 l Howling § 卜 || I Click Me He CI>

Ub Me 〇 〇 V Η-Si 令S*-H 1 ! Me Me ^ ^ Me 紐-p-O-’l -(¾令(版》3 -g i 一^^ ai> 0 o Hh-Si,0—Si,H 1 Im m o (鼴> (注:Me為曱基) ’ μ ^ 包㈣三财氮鍵 有機聚矽氧烷之結構式可為 CH=:CH2 MeUb Me 〇〇V Η-Si Let S*-H 1 ! Me Me ^ ^ Me New-pO-'l -(3⁄4令(版)3 -gi一^^ ai> 0 o Hh-Si,0-Si , H 1 Im mo (鼹> (Note: Me is sulfhydryl) ' μ ^ Package (4) The structural formula of the tripolynitrogen bond organopolyoxane can be CH=:CH2 Me

Me—Si — □Me-Si — □

Sr 口 Si ~ Me Π· Me m Me ,中’m大於或等於2 ’使該有機聚魏烧包含至少兩個 ίίΐίΐ基(alkenyl grcup) °m可進行合理的取值,使該有機 r所人ϋ時的枯度為50〜5〇〇〇cps,並使該導熱膏中有機聚魏 的個數與含氯有機聚石夕氧貌及含氫聚有機石夕氧烧中石夕 ίίΓ〃德’制使該錢妙她可與含有魏鍵的含氫 生触•狀應,《交聯成 熱導填充物的質量約佔導熱貧總質量的89〜92%,該熱導填充物包 1285675 括平均粒徑為1〜5μιη的紹粉與平均粒徑為〇1〜1μχη的氧化辞粉末至少 其中一種,當該熱導填充物為鋁粉與氧化鋅粉末的混合物時,它們的 質量比為1:1〜10:1。 該基體内還填充有佔有機聚矽氧烷質量的百萬分之01〜500的催 化劑(catalyst),該催化劑用於提昇有機聚矽氧烷中的烯基與含氫有機聚 矽氧烷、含氫聚有機矽氧烷中的矽氫鍵間加成反應的速度。該催化劑 包括顧(platinum)或始的化合物(platinum compound)中至少一種,該銘的 化合物可為氯鉑氫酸(chloroplatinic acid)、烯烴鉑錯合物(platinum-olefin complexes)、乙醇始錯合物(platinum-alcoholcomplexes)等。Sr mouth Si ~ Me Π · Me m Me , medium 'm is greater than or equal to 2 ', so that the organic poly-wei burning contains at least two ίίΐίΐ base (alkenyl grcup) °m can be reasonably valued, so that the organic The dryness of ϋ is 50~5〇〇〇cps, and the number of organic poly-wei in the thermal paste is related to the chlorinated organic polychlorite and the hydrogen-containing poly-organic stone igniting in the Xi Shi ίίΓ〃 The system can make the same as the hydrogen-containing contact with the Wei bond. The quality of the cross-linked thermal conductive filler accounts for 89~92% of the total mass of the heat-conducting poor. The thermal conductive filler package is 1,256,675. The powder having an average particle diameter of 1 to 5 μm and at least one of the oxidized powder having an average particle diameter of 〇1 to 1 μχη, when the thermal conductive filler is a mixture of aluminum powder and zinc oxide powder, their mass ratio is 1 :1~10:1. The substrate is further filled with a catalyst of 01 to 500 parts per million by mass of the organic polyoxane, which is used for raising an alkenyl group and a hydrogen-containing organic polyoxane in the organic polyoxane. The rate of addition reaction between hydrazine hydrogen bonds in a hydrogen-containing polyorganosiloxane. The catalyst comprises at least one of a platinum or a platinum compound, which may be a chloroplatinic acid, a platinum-olefin complexes, or an ethanol mismatch. (platinum-alcoholcomplexes) and the like.

該導熱膏利用含氫有機聚矽氧烷、含氫聚有機矽氧烷及有機聚矽 氧烷作為基體,該有機聚矽氧烷中的烯基在催化劑的作用下可與含氫 有機聚矽氧烷及含氫聚有機矽氧烷中的矽氫鍵反應,將有機聚矽氧 -烷、含氫有機聚矽氧烷及含氫聚有機矽氧烷連接起來,生成交聯成網 狀的交聯產物,該交聯產物呈網狀結構,可降低該導熱膏在高溫下的 ' 流動現象,並可改善導熱膏的溢油(bleeding)問題。 可以理解地,該含氳有機聚矽氧烷、含氫聚有機矽氧烷及有機聚 矽氧烷中的甲基可替換為烷基、芳基、芳烷基、烯基等烃基,且該等 烃基中之氫原子可被鹵素取代,而形成齒代烃基。該基體中包含含氫 有機聚矽氧烷與含氫聚有機矽氧烷中任一種及有機聚矽氧烷亦可改善 導熱膏的溢油問題。 【圖式簡單說明】 第一圖為本發明電子裝置的示意圖。 【主要元件符號說明】 電子裝置 10 電路板 11 發熱電子元件 12 散熱元件 13 基板 131 散熱鰭片 133 導熱膏 14 固定元件 15 9 ⑧The thermal conductive paste utilizes a hydrogen-containing organopolysiloxane, a hydrogen-containing polyorganosiloxane and an organic polyoxyalkylene as a matrix, and the alkenyl group in the organopolyoxane can react with a hydrogen-containing organic polycondensate under the action of a catalyst. The hydrazine hydrogen bond reaction between oxane and hydrogen-containing polyorganosiloxane, linking the organopolyoxy-alkane, the hydrogen-containing organopolyoxyalkylene and the hydrogen-containing polyorganosiloxane to form a crosslinked network The crosslinked product has a network structure, which can reduce the 'flow phenomenon of the thermal conductive paste at a high temperature, and can improve the problem of the bleeding of the thermal conductive paste. It is understood that the methyl group in the ruthenium-containing organopolyoxane, the hydrogen-containing polyorganosiloxane and the organopolyoxane can be replaced by a hydrocarbon group such as an alkyl group, an aryl group, an aralkyl group or an alkenyl group, and the The hydrogen atom in the hydrocarbyl group may be substituted by a halogen to form a hydrocarbyl group. The inclusion of either hydrogen-containing polyorganosiloxane and hydrogen-containing polyorganosiloxane in the matrix and the organopolyoxane can also improve the oil spill problem of the thermal paste. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a schematic diagram of an electronic device of the present invention. [Description of main components] Electronic device 10 Circuit board 11 Heated electronic components 12 Heat dissipating components 13 Substrate 131 Heat sink fins 133 Thermal paste 14 Fixing components 15 9 8

Claims (1)

1285675 、申請專利範圍: 1· 2. 3· 4. -種導熱膏,包括佔8〜11%質量百分比的基體及填充於基體_熱導填 充物,該熱V填充物的貝里佔導熱膏質量的89〜92%,該基體包括含有 矽氫鍵的含氫有機聚矽氧烷及含氩聚有機矽氧烷中至少一種,及含有烯 基的有機聚矽氧烷。 如申請專利範圍第1項所述之導熱膏,其中該有機聚矽氧烷在25<t時的 枯度為50〜5000 cps。 如申請專纖圍第1柄述之導齡,其帽有機聚⑪魏巾烯基的個 數與含氫有機聚矽氧烷及含氫聚有機矽氧烷中矽氫鍵的個數比為个U。 如申請專利範圍第1項所述之導熱膏,其中該含氫有機聚矽氧烷之結構 式為: ch3 —Si— ch3 H " I ch3 1 0- l 一 Si-〇 - | 一 1 -Si--〇 1 0¾ a 0¾ ch3 -广 ch3 ch3 上述結構式中,001<a/(a+b)<04。 5.如申請專利範圍第丨項所述之導熱膏,其中該含氫聚有機矽 式為下列三種中至少其中一種: 構 0 iβ _丨ϋρ{0丨Μ fr& ei i 0 H 0 •'R Me H*4卜O-L - (€霞山-〇-弧令一巧货 0 0 f I H-S 卜 CHS 卜H I Me or) k He Me Me Uhl i 夺 ii —!〜C 令(CH2 > 8 -S M_e) ^ 0 <0D H-Si-O-Si-H I ! Me Mb 1285675 6·如申請專利範圍第1項所述之導熱膏,其中該熱導填充物包括鋁粉與氧 化鋅粉末至少其中一種。 7·如申請專利範圍第6項所述之導熱膏,其中該鋁粉的平均粒徑為1〜5叫。 8·如申請專利範圍第6項所述之導熱膏,其中該氧化鋅粉末的平均粒徑為 〇·1 〜Ιμιη 〇 9·如申請專利範圍第6項所述之導熱膏,其中該鋁粉與氧化鋅粉末的質量 比為1:1〜10:1。 10·如申請專利範圍第1項所述之導熱膏,還包括佔有機聚矽氧烷質量的百 萬分之0·1〜500的催化劑。 11·如申請專利範圍第10項所述之導熱膏,其中該催化劑包括鉑或鉑的化合 -物中至少一種。 12·如申請專利範圍第11項所述之導熱膏,其中該鉑的化合物為氯鉑氫酸、 烯烴鉑錯合物或乙醇鉑錯合物。 13·—種使用如申請專利範圍第1至ι2項中任一項所述之導熱膏的電子裝 置’包括一發熱電子元件、一用於對該發熱電子元件散熱的散熱元件, 所述導熱膏填充於該發熱電子元件與散熱元件之間。 ⑧1285675, the scope of patent application: 1 · 2. 3 · 4. A kind of thermal paste, including 8~11% by mass of the substrate and filled in the substrate _ thermal conductive filler, the thermal V filler Berry accounted for thermal paste The matrix comprises 89 to 92% by mass, and the substrate comprises at least one of a hydrogen-containing organopolyoxyalkylene containing a hydrazine hydrogen bond and an argon-containing polyorganosiloxane, and an alkenyl group-containing organopolyoxyalkylene. The thermal paste according to claim 1, wherein the organopolyoxyalkylene has a dryness of 50 to 5000 cps at 25 < t. For example, the number of organic poly 11 Weibo alkenyl groups in the cap of the first fiber is the ratio of the hydrogen number of the hydrogen-containing organopolysiloxane and the hydrogen-containing polyorganosiloxane. U. The thermal paste described in claim 1, wherein the structural formula of the hydrogen-containing organopolyoxane is: ch3 — Si— ch3 H " I ch3 1 0- l a Si-〇- | Si--〇1 03⁄4 a 03⁄4 ch3 - wide ch3 ch3 In the above structural formula, 001 < a / (a + b) < 04. 5. The thermal paste according to claim 2, wherein the hydrogen-containing polyorgano is at least one of the following three types: constitutively 0 iβ _丨ϋρ{0丨Μ fr& ei i 0 H 0 • ' R Me H*4 Bu OL - (€霞山-〇-弧令巧巧货0 0 f I HS 卜 CHS 卜 HI Me or) k He Me Me Uhl i ii ii —!~C order (CH2 > 8 -S M_e) ^ 0 <0D H-Si-O-Si-H I ! Me Mb 1285675 6 The heat conductive paste according to claim 1, wherein the thermal conductive filler comprises aluminum powder and zinc oxide At least one of the powders. 7. The heat conductive paste according to claim 6, wherein the aluminum powder has an average particle diameter of 1 to 5 Å. 8. The thermal conductive paste according to claim 6, wherein the zinc oxide powder has an average particle diameter of 〇·1 Ιμιη 〇9. The thermal conductive paste according to claim 6 wherein the aluminum powder The mass ratio to the zinc oxide powder is 1:1 to 10:1. 10. The thermal paste according to claim 1, further comprising a catalyst of from 0.1 to 500 parts per million by mass of the organopolyoxane. 11. The thermally conductive paste of claim 10, wherein the catalyst comprises at least one of a platinum or a platinum compound. 12. The thermal paste according to claim 11, wherein the platinum compound is chloroplatinic acid, olefin platinum complex or ethanol platinum complex. 13. An electronic device using a thermal paste according to any one of claims 1 to 2, comprising a heat-generating electronic component, a heat dissipating component for dissipating heat to the heat-generating electronic component, the thermal paste Filled between the heat-generating electronic component and the heat dissipating component. 8
TW094144809A 2005-12-16 2005-12-16 Heat conductive grease and semiconductor device TWI285675B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW094144809A TWI285675B (en) 2005-12-16 2005-12-16 Heat conductive grease and semiconductor device
US11/309,463 US20070151416A1 (en) 2005-12-16 2006-08-10 Thermal interface material and semiconductor device incorporating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW094144809A TWI285675B (en) 2005-12-16 2005-12-16 Heat conductive grease and semiconductor device

Publications (2)

Publication Number Publication Date
TW200724661A TW200724661A (en) 2007-07-01
TWI285675B true TWI285675B (en) 2007-08-21

Family

ID=38223012

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144809A TWI285675B (en) 2005-12-16 2005-12-16 Heat conductive grease and semiconductor device

Country Status (2)

Country Link
US (1) US20070151416A1 (en)
TW (1) TWI285675B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7678615B2 (en) * 2007-08-29 2010-03-16 Advanced Micro Devices, Inc. Semiconductor device with gel-type thermal interface material
US7833839B1 (en) * 2007-09-15 2010-11-16 Globalfoundries Inc. Method for decreasing surface delamination of gel-type thermal interface material by management of the material cure temperature
JP6014299B2 (en) * 2008-09-01 2016-10-25 東レ・ダウコーニング株式会社 Thermally conductive silicone composition and semiconductor device
CN103483372B (en) * 2013-09-02 2015-10-14 上海硅普化学品有限公司 3,4-epoxycyclohexylethyl methyl cyclosiloxane and preparation method thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0297559A (en) * 1988-10-03 1990-04-10 Toshiba Silicone Co Ltd Heat-conductive silicone composition
JPH0649827B2 (en) * 1990-08-03 1994-06-29 信越化学工業株式会社 High strength silicone rubber composition
US5925709A (en) * 1996-08-29 1999-07-20 Shin-Etsu Chemical Co., Ltd. Method for the preparation of silicone rubber
JP3444199B2 (en) * 1998-06-17 2003-09-08 信越化学工業株式会社 Thermal conductive silicone rubber composition and method for producing the same
JP3580366B2 (en) * 2001-05-01 2004-10-20 信越化学工業株式会社 Thermal conductive silicone composition and semiconductor device

Also Published As

Publication number Publication date
TW200724661A (en) 2007-07-01
US20070151416A1 (en) 2007-07-05

Similar Documents

Publication Publication Date Title
TWI732006B (en) Gel-type thermal interface material
US11319412B2 (en) Thermally conductive silicone compound
TWI462968B (en) A heat dissipating material and a semiconductor device using the same
TW549011B (en) Dissipation of heat from a circuit board having bare silicon chips mounted thereon
JP7423537B2 (en) Gel type thermal interface material
JP2014003152A (en) Method for forming thermal interface material and heat dissipation structure
KR20150110580A (en) Heat conductive silicone composition, heat conductive layer, and semiconductor device
JP2008260798A (en) Heat-conductive cured material and method for producing the same
JP2016082155A (en) Heat dissipation sheet
JP2014003141A (en) Thermally conductive sheet, and electronic apparatus
TWI285675B (en) Heat conductive grease and semiconductor device
WO2019198424A1 (en) Heat-conductive silicone composition and cured product thereof
US20220380548A1 (en) Thermally conductive silicone composition and production method therefor
TW200536896A (en) Composition for heat conductive siloxanes heat release and its using method
JP5047505B2 (en) Electronic device excellent in heat dissipation and manufacturing method thereof
JP2005197609A (en) Heat radiating sheet
JP2016219732A (en) Thermal conducive composite silicone rubber sheet
WO2021131681A1 (en) Thermally conductive silicone resin composition
JP5418620B2 (en) Thermal conduction member
JP2021195478A (en) Heat-conductive silicone composition, cured product thereof, and heat radiation sheet
JP2016076678A (en) Thermally conductive sheet
TW202016219A (en) Thermally conductive silicone composition and cured product thereof
WO2022249754A1 (en) Heat-conductive silicone composition
TW202202592A (en) Silicone gel composition and silicone gel sheet
TW202302761A (en) Heat-conductive silicone composition, semiconductor device, and method for manufacturing same