WO2014115456A1 - 熱伝導性シリコーン組成物、熱伝導性層及び半導体装置 - Google Patents
熱伝導性シリコーン組成物、熱伝導性層及び半導体装置 Download PDFInfo
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- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
Definitions
- the present invention relates to a thermally conductive silicone composition, a thermally conductive layer, and a semiconductor device, which are unlikely to cause a pump-out phenomenon or peeling due to repeated heating and cooling when mounted on a heating element.
- LSIs and IC chips are widely known to generate heat during use and performance degradation associated therewith, and various heat dissipation techniques are used as means for solving this.
- a cooling member is arranged in the vicinity of the heat generating portion, and after heat-radiating by efficiently removing heat from the cooling member after bringing them into close contact with each other. At this time, if there is a gap between the heat generating member and the cooling member, the heat conduction becomes inefficient due to the presence of air having low heat conductivity, so that the temperature of the heat generating member cannot be lowered sufficiently.
- Some heat release greases are used by being sandwiched between a semiconductor chip and a heat spreader and being cured by heating, so that the semiconductor chip and the heat spreader are brought into close contact with each other.
- Various materials have been reported so far (Japanese Patent No. 5047505: Patent Document 4).
- the conventional materials have a high storage elastic modulus G ′ and cannot follow the warp between the heating element and the cooling member due to the cooling cycle generated by the operation of the heating element being stopped, and the thermal grease is peeled off from the base material. May occur.
- a non-reactive grease is used as a material having a low G ′, pump-out occurs.
- the present invention has been made in view of the above circumstances, and does not generate pump-out or peeling during a thermal cycle, and provides a thermally conductive silicone composition, a thermally conductive layer, and a cured product in which an increase in thermal resistance is suppressed.
- An object is to provide a semiconductor device.
- the present inventors have used a thermally conductive silicone composition containing the following components (A) to (F) to produce a heat generating electronic component and a heat radiating member.
- This composition gives an appropriate storage elastic modulus, loss elastic modulus, and loss coefficient, and is difficult to peel off even after repeated cooling and heating cycles. It was found that the increase in resistance can be suppressed.
- the material by designing the material to have an appropriate loss factor, it is excellent in re-adhesion even when delamination (interfacial delamination) or destruction of the material itself (cohesive failure) occurs, and the thermal resistance after re-adhesion
- the present inventors have found that the rise can be suppressed and have made the present invention.
- thermally conductive silicone composition disposed between a heat-generating electronic component and a heat-dissipating member, comprising the following components (A) to (F): (A) 100 parts by mass of an organopolysiloxane having at least two alkenyl groups in one molecule and having a kinematic viscosity at 25 ° C.
- Compounding amount of 0.1 to 500 ppm of component (A) as a platinum atom [2] Further, a control agent selected from acetylene compounds, various nitrogen compounds, organic phosphorus compounds, oxime compounds and organic chloro compounds that suppress the catalytic activity of the components (G) and (F).
- the heat conductive silicone composition according to [1] which contains a blending amount of mass%.
- the storage elastic modulus G ′ at 150 ° C. is 2,000 Pa to 20,000 Pa
- the loss elastic modulus G ′′ is 5,000 Pa to 40,000 Pa
- the loss coefficient tan ⁇ is 0.8 to 3.0.
- the heat conductive silicone composition according to [1] or [2] which gives a cured product in a range.
- the heat conductive silicone composition of the present invention has appropriate ranges of storage elastic modulus, loss elastic modulus and loss coefficient, and is difficult to generate pump-out and peeling during a cooling / heating cycle, thereby suppressing an increase in thermal resistance. Is.
- the material by designing the material to have a loss factor in an appropriate range, even if peeling or destruction of the material itself occurs, it can be brought into close contact with the substrate again, and the thermal resistance after re-adhesion greatly increases. It is something that does not.
- the thermally conductive silicone composition of the present invention contains the following components (A) to (F).
- the storage elastic modulus G ′ at 150 ° C. of the cured product of the thermally conductive silicone composition of the present invention is preferably 2,000 Pa to 20,000 Pa, and preferably 2,000 Pa to 18,000 Pa. If it is less than 2,000 Pa, the storage elastic modulus is too low and the composition will be pumped out when the device is in operation. If it exceeds 20,000 Pa, the elastic modulus will be too high and peeling will occur during the cooling cycle when the device is in operation. Resulting in.
- the organopolysiloxane of component (A) constituting the present invention has at least two alkenyl groups directly bonded to a silicon atom in one molecule, and may be linear or branched, and these two or more different types It may be a mixture of viscosities.
- alkenyl group include a vinyl group, an allyl group, a 1-butenyl group, and a 1-hexenyl group, but a vinyl group is preferable from the viewpoint of ease of synthesis and cost.
- Examples of the remaining organic group bonded to the silicon atom include an alkyl group such as a methyl group, an ethyl group, a propyl group, a butyl group, a hexyl group, and a dodecyl group, an aryl group such as a phenyl group, a 2-phenylethyl group, and a 2-phenylpropylene group.
- An aralkyl group such as a sulfur group is exemplified, and a substituted hydrocarbon group such as a chloromethyl group and a 3,3,3-trifluoropropyl group is also exemplified. Of these, a methyl group is preferred from the viewpoint of ease of synthesis and cost.
- the component (B) is a one-terminal trifunctional hydrolyzable dimethylpolysiloxane represented by the following general formula (1).
- a is a positive number of 5 to 100, and R 1 is an alkyl group having 1 to 6 carbon atoms.
- this one-terminal trifunctional hydrolyzable dimethylpolysiloxane is less than 50 parts by mass with respect to 100 parts by mass of component (A), sufficient wettability cannot be exhibited. Since it becomes worse and less reliable, and the reliability after re-adhering again becomes worse, 50 to 150 parts by mass, preferably 60 to 150 parts by mass, more preferably 60 to 130 parts by mass, and still more preferably 60 to 120 parts by mass. The range of parts by mass is good.
- the thermal conductivity of the composition becomes low and more than 2,000 parts by mass. Therefore, the range of 800 to 2,000 parts by mass is preferable, and the range of 800 to 1,800 parts by mass is preferable.
- thermally conductive filler having the thermal conductivity of the component (C) those having a thermal conductivity of 10 W / m ° C. or more are used. This is because if the thermal conductivity of the filler is smaller than 10 W / m ° C., the thermal conductivity itself of the thermally conductive silicone grease composition is decreased.
- heat conductive fillers include aluminum powder, copper powder, silver powder, iron powder, nickel powder, gold powder, tin powder, metal silicon powder, aluminum nitride powder, boron nitride powder, alumina powder, diamond powder, carbon powder. Indium powder, gallium powder, zinc oxide powder, aluminum oxide powder, etc., any filler may be used as long as it is 10 W / m ° C. or higher, and one or a mixture of two or more may be used. .
- the component (D) is an organohydrogenpolysiloxane represented by the following general formula (2).
- b is a positive number of 5 to 500, and R 2 is an alkyl group of 1 to 6 carbon atoms.
- the component (E) is an organohydrogenpolysiloxane excluding the component (D).
- the organohydrogenpolysiloxane having Si—H groups as component (E) needs to have at least two Si—H groups in one molecule in order to network the composition by crosslinking.
- the remaining organic groups bonded to the silicon atom include methyl groups, ethyl groups, purpyl groups, butyl groups, hexyl groups, alkyl groups such as dodecyl groups, aryl groups such as phenyl groups, 2-phenylethyl groups, 2-phenylpropyl groups.
- substituted hydrocarbon groups such as aralkyl groups such as chloromethyl groups, 3,3,3-trifluoropropyl groups, 2-glycidoxyethyl groups, 3-glycidoxypropyl groups, 4-glycidyl groups, etc.
- An epoxy ring-containing organic group such as a sidoxybutyl group is also exemplified.
- Such an organohydrogenpolysiloxane having a Si—H group may be linear, branched or cyclic, or a mixture thereof.
- component (E) includes the following.
- the blending amount of component (D) and component (E) is such that ⁇ number of Si—H groups in combination of component (D) and component (E) ⁇ / ⁇ number of alkenyl groups in component (A) ⁇ is 0.5. If it is smaller, the composition cannot be reticulated sufficiently, so that the loss factor tan ⁇ becomes too high, and if it is larger than 2.0, the loss factor tan ⁇ becomes too low, so the range of 0.5 to 2.0 is good, A range of 0.5 to 1.8 is preferable. In this case, from the standpoint of re-adhesion, if the ratio is less than 0.7, the composition cannot be reticulated sufficiently, and the silicone composition after re-adhesion may be pumped out during the reliability test. If it is greater than 5, the crosslink density becomes too high and re-adhesiveness may not be exhibited, so 0.7 to 1.5 is preferable, and 0.7 to 1.3 is more preferable. .
- the catalyst selected from platinum and platinum compounds as the component (F) is a component for promoting the addition reaction between the alkenyl group of the component (A) and the Si—H group of the component (B).
- the component (F) include platinum alone, chloroplatinic acid, platinum-olefin complexes, platinum-alcohol complexes, platinum coordination compounds, and the like.
- the amount of component (F) is preferably in the range of 0.1 to 500 ppm based on the mass of component (A).
- the silicone composition of the present invention is selected from the acetylene compounds, various nitrogen compounds, organic phosphorus compounds, oxime compounds, and organic chloro compounds as the component (G) as necessary for the purpose of suppressing the catalytic activity of the component (F).
- the component (G) control agent suppresses the progress of the hydrosilylation reaction at room temperature and prolongs shelf life and pot life.
- Known reaction control agents can be used, and acetylene compounds, various nitrogen compounds, organic phosphorus compounds, oxime compounds, organic chloro compounds, and the like can be used.
- the blending amount of component (G) is preferably in the range of 0.1 to 5% by mass relative to component (A). These may be used after diluted with toluene or the like in order to improve dispersibility in the silicone resin.
- an antioxidant may be added to the present invention as necessary in order to prevent deterioration.
- the components (A) to (G) are mixed with Trimix, Twinmix, and Planetary Mixer (all are registered trademarks of a mixer manufactured by Inoue Seisakusho Co., Ltd.) Ultra Mixer (Mizuho Industry ( Mixing is performed using a mixer such as a registered trademark of a blender manufactured by Kogyo Co., Ltd., Hibis Disper Mix (registered trademark of a mixer manufactured by Special Machine Chemical Co., Ltd.)
- the silicone composition of the present invention is in the form of a grease having 10 to 500 Pa ⁇ s, particularly 50 to 400 Pa ⁇ s at 25 ° C., and is cured under curing conditions of 70 to 300 ° C. and 30 to 180 minutes.
- the storage elastic modulus G ′ at 150 ° C. is usually 2,000 Pa to 20,000 Pa and the loss elastic modulus G ′′ is 5,000 Pa to 40,000 Pa.
- the cured product of the thermally conductive silicone composition of the present invention may be peeled off from the substrate (interfacial separation) or the material itself (cohesive failure) after being adhered to a substrate such as an exothermic electronic component. It has excellent re-adhesion to the substrate and has a thermal resistance in the above range even after re-adhesion.
- the value of the ratio ⁇ / ⁇ is preferably 1.1 or less, where ⁇ is the thermal resistance value before interfacial peeling or cohesive failure, and ⁇ is the thermal resistance value after re-adhesion.
- the lower limit is not particularly limited, but is usually 0.5 or more.
- the value of ⁇ / ⁇ can be achieved by designing the material so as to have a loss coefficient in an appropriate range.
- the thermal resistance is -40 ° C (30 minutes) ⁇ 125 ° C (30 minutes) even after 1,500 cycles of a heat cycle test of -55 ° C (30 minutes) ⁇ 125 ° C (30 minutes). Even after 1,000 cycles of the heat cycle test, there is little change.
- the cured product of the composition of the present invention can be used as a thermally conductive cured product for forming a thermally conductive layer interposed between a heat generating electronic component and a heat radiating member.
- a semiconductor device having excellent heat dissipation characteristics using the composition of the present invention that is, a heat-generating electronic component, a member for heat dissipation, and a heat conductive layer made of a cured product of the composition of the present invention. It is possible to obtain a semiconductor device in which the heat generating electronic component and the heat radiating member are bonded via the heat conductive layer.
- the semiconductor device includes: (A) In the case of applying to the surface of the heat-generating electronic component or the member for heat dissipation, the composition is applied to the surface of the component or member, and the coating layer (thermal conductive layer) made of the composition is applied to the surface. Forming a step, (B) a step of pressing and fixing the coating layer, the heat-generating electronic component and the heat radiating member, and (c) treating the resulting structure at 80 to 180 ° C. to cure the coating layer. Can be obtained by a manufacturing method including the step of forming the heat conductive layer.
- FIG. 1 is merely an example of application of the composition of the present invention to a semiconductor device, and is not intended to limit the semiconductor device according to the present invention to that shown in FIG. .
- the frozen composition of the present invention is allowed to stand at room temperature and naturally thawed to form a grease.
- the liquid composition of the present invention is housed in a coating tool such as a syringe.
- the composition of the present invention is applied (dispensed) from a syringe or the like onto the surface of an IC package 2 such as a CPU that is a heat-generating electronic component mounted on the printed wiring board 1 shown in FIG.
- the coating layer 3 is formed.
- a heat dissipating member for example, a heat dissipating member 4 having heat dissipating fins usually made of aluminum is disposed, and the heat dissipating member 4 is pressed against the IC package 2 through the covering layer 3 by using the clamp 5.
- a semiconductor element such as an IC, a chip having a chip area of 50 mm 2 or more is preferably used.
- the clamp 5 is adjusted or selected so that the thickness of the coating layer 3 existing between the IC package 2 and the heat radiation member 4 is preferably 200 ⁇ m or less, particularly preferably 180 ⁇ m or less. It is good to do.
- the thickness is too thin, the followability of the composition of the present invention to the IC package 2 and the heat radiating member 4 becomes insufficient at the time of the press contact, and there is a possibility that a gap is formed between the two. Therefore, the lower limit is preferably 10 ⁇ m or more.
- the thickness is too large, the thermal resistance increases, so that a sufficient heat dissipation effect may not be obtained.
- a sheet-like cured product having a desired thickness from the composition of the present invention in advance and interposing it between a heat-generating electronic component and a heat-dissipating member in the same manner as a conventional heat-conductive sheet, Similar effects can be obtained.
- a sheet of a cured product of the composition of the present invention can be used as appropriate as a part of another device or the like that requires heat conductivity and heat resistance.
- Thermal resistance measurement II A heat conductive silicone composition is sandwiched between two circular aluminum plates having a diameter of 12.7 mm, placed in an oven at 150 ° C. for 90 minutes to heat and cure the heat conductive silicone composition, and a test piece for measuring thermal resistance. The thermal resistance was measured. This measured value was defined as a thermal resistance ⁇ . Further, the material was intentionally peeled by pulling the test piece, and the thermal resistance was measured again by pressurizing at normal temperature. This measured value was defined as a thermal resistance ⁇ . Further, after that, a heat cycle test (1 cycle—40 ° C. (30 minutes) to 125 ° C. (30 minutes)) was performed for 1,000 cycles, and changes in thermal resistance were observed. In addition, this thermal resistance measurement was performed by nanoflash (the Niche company make, LFA447).
- composition of the present invention was prepared.
- Component A-1 Dimethylpolysiloxane having both ends blocked with dimethylvinylsilyl groups and a kinematic viscosity at 25 ° C. of 600 mm 2 / s
- Component (C) The following aluminum powder and zinc oxide powder were mixed for 15 minutes at room temperature using a 5-liter planetary mixer (manufactured by Inoue Seisakusho Co., Ltd.) at the mixing ratio shown in Table 1 below to obtain C-1. It was.
- Component F-1 A-1 solution of platinum-divinyltetramethyldisiloxane complex, containing 1% by mass as platinum atoms
- Components (A) to (G) were mixed as follows to obtain thermally conductive silicone compositions of Examples and Comparative Examples. That is, the component (A) was taken in a 5 liter planetary mixer (manufactured by Inoue Seisakusho Co., Ltd.), the components (B) and (C) were added in the blending amounts shown in the following table, and mixed at 170 ° C. for 1 hour. It cooled until it became normal temperature, and added (D), (E), (F), (G) component by the compounding quantity shown to the following table
- the component (A) was taken in a 5 liter planetary mixer (manufactured by Inoue Seisakusho Co., Ltd.), the components (B) and (C) were added in the blending amounts shown in the following table, and mixed at 170 ° C. for 1 hour. It cooled until it became normal temperature, and added (D), (E), (F), (G) component by the compounding quantity shown to
- thermally conductive silicone composition of the present invention By using the thermally conductive silicone composition of the present invention, it is difficult for pump-out and peeling to occur, and as a result, it is possible to suppress an increase in thermal resistance after the heat cycle test.
- the thermally conductive silicone composition of the present invention can be re-adhered to the substrate even when peeling from the substrate such as an electronic component or the material itself is broken, and the thermal resistance is almost changed after re-adhesion. Therefore, it is possible to suppress an increase in thermal resistance.
Abstract
Description
〔1〕
発熱性電子部品と放熱用部材の間に配置される熱伝導性シリコーン組成物であって、下記(A)~(F)成分を含有してなることを特徴とする熱伝導性シリコーン組成物。
(A)1分子中に少なくとも2個のアルケニル基を有する、25℃の動粘度が10~100,000mm2/sのオルガノポリシロキサン
100質量部、
(B)下記一般式(1)
で表される片末端3官能の加水分解性ジメチルポリシロキサン
50~150質量部、
(C)10W/m℃以上の熱伝導率を有する熱伝導性充填材
(A)成分と(B)成分の合計100質量部に対し
800~2,000質量部、
(D)下記一般式(2)
で表されるオルガノハイドロジェンポリシロキサン、
(E)(D)成分以外の、1分子中に少なくとも2個のケイ素原子に直結した水素原子を含有するオルガノハイドロジェンポリシロキサン
(D)成分と(E)成分の配合量は、{(D)成分と(E)
成分を合わせたSi-H基の個数}/{(A)成分のアルケ
ニル基の個数}が0.5~2.0になる配合量であり、かつ
((D)成分由来のSi-H基の個数)/((E)成分由来
のSi-H基の個数)が0.6~10.0になる割合、
(F)白金及び白金化合物からなる群より選択される触媒
白金原子として(A)成分の
0.1~500ppmとなる配合量
〔2〕
更に、(G)(F)成分の触媒活性を抑制するアセチレン化合物、各種窒素化合物、有機りん化合物、オキシム化合物及び有機クロロ化合物より選択される制御剤
(A)成分に対して0.1~5質量%となる配合量
を含有する〔1〕記載の熱伝導性シリコーン組成物。
〔3〕
150℃における貯蔵弾性率G’が2,000Pa以上20,000Pa以下であり、損失弾性率G”が5,000Pa以上40,000Pa以下であり、かつ損失係数tanδが0.8~3.0の範囲である硬化物を与える〔1〕又は〔2〕記載の熱伝導性シリコーン組成物。
〔4〕
〔1〕~〔3〕のいずれかに記載のシリコーン組成物を基材上に塗布、硬化させて得られる硬化物の熱抵抗値αと、この硬化物を凝集破壊又は基材から界面剥離させ、再度上記基材に密着させた後の熱抵抗値βとの比β/αが、1.1以下である硬化物を与える〔1〕~〔3〕のいずれかに記載の熱伝導性シリコーン組成物。
〔5〕
〔1〕~〔4〕のいずれかに記載の熱伝導性シリコーン組成物を硬化することによって形成され、発熱性電子部品と放熱用部材との間に配置されて、発熱性電子部品からの熱を放熱用部材に伝熱する熱伝導性層。
〔6〕
発熱性電子部品と、放熱用部材と、〔1〕~〔4〕のいずれかに記載の熱伝導性シリコーン組成物の硬化物からなる熱伝導性層とを有してなる半導体装置であって、前記発熱性電子部品と前記放熱用部材とが前記熱伝導性層を介して接合されている半導体装置。
〔7〕
熱伝導性層の厚さが200μm以下である〔6〕記載の半導体装置。
〔8〕
発熱性電子部品が半導体素子であって、該素子のチップの面積が50mm2以上の大きさである〔6〕又は〔7〕記載の半導体装置。
この場合、本発明の熱伝導性シリコーン組成物の硬化物の150℃における貯蔵弾性率G’は2,000Pa以上20,000Pa以下がよく、好ましくは2,000Pa以上18,000Pa以下がよい。2,000Pa未満であると貯蔵弾性率が低すぎて素子稼動時に組成物がポンプアウトしてしまうし、20,000Paを超えると弾性率が高すぎるため素子稼動時の冷熱サイクル中に剥離が発生してしまう。
また、本発明の熱伝導性シリコーン組成物の硬化物の損失弾性率G”は5,000Pa以上40,000Pa以下がよく、好ましくは5,000Pa以上35,000Pa以下がよい。5,000Pa未満であると組成物の粘性が乏しく密着が悪いため熱抵抗が上昇してしまうし、40,000Paを超えると素子稼動時に組成物がポンプアウトしてしまう。
更に、損失係数tanδは0.8~3.0の範囲、好ましくは0.8~2.5の範囲がよい。0.8より低いと素子稼動時の冷熱サイクル中に組成物が硬くなってしまい剥離が発生してしまうし、3.0を超えると素子稼動時に組成物のポンプアウトが発生してしまう。
(C)成分の平均粒径は0.1~100μm、特に0.1~50μmの範囲がよい。該平均粒径が0.1μmより小さいと得られる組成物がグリース状にならず伸展性に乏しいものになり、100μmより大きいと放熱グリースの均一性が乏しくなり、再密着性が悪化する場合がある。なお、本発明において、平均粒径は日機装(株)製マイクロトラックMT330OEXにより測定できる体積基準の体積平均径である。(C)成分の形状は、不定形でも球形でも如何なる形状でもよい。
(E)成分のSi-H基を有するオルガノハイドロジェンポリシロキサンは、架橋により組成物を網状化するためにSi-H基を少なくとも1分子中に2個有することが必要である。ケイ素原子に結合する残余の有機基としてはメチル基、エチル基、プルピル基、ブチル基、ヘキシル基、ドデシル基等のアルキル基、フェニル基等のアリール基、2-フェニルエチル基、2-フェニルプロピル基等のアラルキル基、クロロメチル基、3,3,3-トリフルオロプロピル基等の置換炭化水素基が挙げられ、また2-グリシドキシエチル基、3-グリシドキシプロピル基、4-グリシドキシブチル基等のエポキシ環含有有機基も例として挙げられる。かかるSi-H基を有するオルガノハイドロジェンポリシロキサンは、直鎖状、分岐状及び環状のいずれであってもよく、またこれらの混合物であってもよい。
(G)成分の制御剤は、室温でのヒドロシリル化反応の進行を抑え、シェルフライフ、ポットライフを延長させるものである。反応制御剤としては公知のものを使用することができ、アセチレン化合物、各種窒素化合物、有機りん化合物、オキシム化合物、有機クロロ化合物等が利用できる。(G)成分の配合量は(A)成分に対して0.1~5質量%となる範囲がよい。これらはシリコーン樹脂への分散性をよくするためにトルエン等で希釈して使用してもよい。
この場合、本発明のシリコーン組成物は上述したように、通常150℃における貯蔵弾性率G’が2,000Pa以上20,000Pa以下であり、損失弾性率G”が5,000Pa以上40,000Pa以下であり、かつ損失係数tanδが0.8~3.0の範囲である硬化物を与える。
なお、上記β/αの値は、適切な範囲の損失係数を有するように材料を設計することにより達成することができるものである。
この場合、この熱抵抗は-55℃(30分)⇔125℃(30分)のヒートサイクル試験を1,500サイクル実施した後でも、特に-40℃(30分)⇔125℃(30分)のヒートサイクル試験を1,000サイクル実施した後でも殆んど変わらないものである。
(a)前記発熱性電子部品の表面又は放熱用部材に塗布する場合は、前記組成物を前記部品又は部材表面に塗布して、前記表面に前記組成物からなる被覆層(熱伝導性層)を形成させる工程、
(b)前記被覆層、前記発熱性電子部品及び前記放熱用部材を圧接して固定させる工程、及び
(c)得られた構造体を80~180℃で処理して、前記被覆層を硬化させて前記熱伝導性層とする工程
を含む製造方法によって得ることができる。
本発明に関わる効果に関する試験は次のように行った。
〔弾性率評価〕
直径2.5cmの2枚のパラレルプレートの間に、熱伝導性シリコーン組成物を厚み2mmで塗布した。塗布したプレートを25℃から5℃/分にて昇温後、150℃において120分間温度を維持するようにプログラムを作成し、貯蔵弾性率G’、損失弾性率G”及び損失係数tanδの測定を行った。測定は、粘弾性測定装置(レオメトリック・サイエンティフィック社製、タイプRDAIII)を用いて行い、昇温開始後5,620秒後又は7,200秒後の数値を採用した。
直径12.7mmの円形アルミニウム板2枚に、熱伝導性シリコーン組成物を挟み込み、150℃のオーブンに90分間装入して熱伝導性シリコーン組成物を加熱硬化させ、熱抵抗測定用の試験片を作製し、熱抵抗を測定した。更にこの試験片を1サイクル-55℃(30分)⇔125℃(30分)のヒートサイクル試験下に静置し、1,500サイクル実施後に再び熱抵抗を測定した。なお、この熱抵抗測定はナノフラッシュ(ニッチェ社製、LFA447)によって行った。
直径12.7mmの円形アルミニウム板2枚に、熱伝導性シリコーン組成物を挟み込み、150℃のオーブンに90分間装入して熱伝導性シリコーン組成物を加熱硬化させ、熱抵抗測定用の試験片を作製し、熱抵抗を測定した。この測定値を熱抵抗αとした。さらに、この試験片を引っ張ることで意図的に材料を剥離させ、常温にて加圧することにより再び熱抵抗を測定した。この測定値を熱抵抗βとした。さらに、その後ヒートサイクル試験(1サイクル-40℃(30分)⇔125℃(30分))を1,000サイクル実施して熱抵抗の変化を観察した。なお、この熱抵抗測定はナノフラッシュ(ニッチェ社製、LFA447)によって行った。
熱伝導性シリコーン組成物の絶対粘度は、マルコム粘度計(タイプPC-1TL)を用いて25℃で測定した。
各組成物を3cm厚の型に流し込み、キッチン用ラップをかぶせて京都電子工業(株)製のModel QTM-500で測定した。
(A)成分
A-1:両末端がジメチルビニルシリル基で封鎖され、25℃における動粘度が600mm2/sのジメチルポリシロキサン
下記のアルミニウム粉末と酸化亜鉛粉末を、5リットルプラネタリーミキサー(井上製作所(株)製)を用い、下記表1の混合比で室温にて15分間混合し、C-1を得た。
平均粒径2.0μmのアルミニウム粉末
平均粒径20.0μmのアルミニウム粉末
平均粒径1.0μmの酸化亜鉛粉末
F-1:白金-ジビニルテトラメチルジシロキサン錯体のA-1溶液、白金原子として1質量%含有
G-1:1-エチニル-1-シクロヘキサノールの50質量%トルエン溶液
即ち、5リットルプラネタリーミキサー(井上製作所(株)製)に(A)成分をとり、下記表に示す配合量で(B)、(C)成分を加え、170℃で1時間混合した。常温になるまで冷却し、次に(D)、(E)、(F)、(G)成分を下記表に示す配合量で加えて均一になるように混合した。
*4:熱抵抗測定IIの結果を示す。
2 ICパッケージ
3 被覆層(熱伝導性層)
4 放熱部材
5 クランプ
Claims (8)
- 発熱性電子部品と放熱用部材の間に配置される熱伝導性シリコーン組成物であって、下記(A)~(F)成分を含有してなることを特徴とする熱伝導性シリコーン組成物。
(A)1分子中に少なくとも2個のアルケニル基を有する、25℃の動粘度が10~100,000mm2/sのオルガノポリシロキサン
100質量部、
(B)下記一般式(1)
で表される片末端3官能の加水分解性ジメチルポリシロキサン
50~150質量部、
(C)10W/m℃以上の熱伝導率を有する熱伝導性充填材
(A)成分と(B)成分の合計100質量部に対し
800~2,000質量部、
(D)下記一般式(2)
で表されるオルガノハイドロジェンポリシロキサン、
(E)(D)成分以外の、1分子中に少なくとも2個のケイ素原子に直結した水素原子を含有するオルガノハイドロジェンポリシロキサン
(D)成分と(E)成分の配合量は、{(D)成分と(E)
成分を合わせたSi-H基の個数}/{(A)成分のアルケ
ニル基の個数}が0.5~2.0になる配合量であり、かつ
((D)成分由来のSi-H基の個数)/((E)成分由来
のSi-H基の個数)が0.6~10.0になる割合、
(F)白金及び白金化合物からなる群より選択される触媒
白金原子として(A)成分の
0.1~500ppmとなる配合量 - 更に、(G)(F)成分の触媒活性を抑制するアセチレン化合物、各種窒素化合物、有機りん化合物、オキシム化合物及び有機クロロ化合物より選択される制御剤
(A)成分に対して0.1~5質量%となる配合量
を含有する請求項1記載の熱伝導性シリコーン組成物。 - 150℃における貯蔵弾性率G’が2,000Pa以上20,000Pa以下であり、損失弾性率G”が5,000Pa以上40,000Pa以下であり、かつ損失係数tanδが0.8~3.0の範囲である硬化物を与える請求項1又は2記載の熱伝導性シリコーン組成物。
- 請求項1~3のいずれか1項記載のシリコーン組成物を基材上に塗布、硬化させて得られる硬化物の熱抵抗値αと、この硬化物を凝集破壊又は基材から界面剥離させ、再度上記基材に密着させた後の熱抵抗値βとの比β/αが、1.1以下である硬化物を与える請求項1~3のいずれか1項記載の熱伝導性シリコーン組成物。
- 請求項1~4のいずれか1項記載の熱伝導性シリコーン組成物を硬化することによって形成され、発熱性電子部品と放熱用部材との間に配置されて、発熱性電子部品からの熱を放熱用部材に伝熱する熱伝導性層。
- 発熱性電子部品と、放熱用部材と、請求項1~4のいずれか1項記載の熱伝導性シリコーン組成物の硬化物からなる熱伝導性層とを有してなる半導体装置であって、前記発熱性電子部品と前記放熱用部材とが前記熱伝導性層を介して接合されている半導体装置。
- 熱伝導性層の厚さが200μm以下である請求項6記載の半導体装置。
- 発熱性電子部品が半導体素子であって、該素子のチップの面積が50mm2以上の大きさである請求項6又は7記載の半導体装置。
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US20150357261A1 (en) | 2015-12-10 |
KR20150110580A (ko) | 2015-10-02 |
CA2896300A1 (en) | 2014-07-31 |
US9698077B2 (en) | 2017-07-04 |
TW201443214A (zh) | 2014-11-16 |
TWI597357B (zh) | 2017-09-01 |
MY170487A (en) | 2019-08-07 |
KR102108902B1 (ko) | 2020-05-11 |
CN104968728A (zh) | 2015-10-07 |
CA2896300C (en) | 2020-10-27 |
CN104968728B (zh) | 2017-09-22 |
JP6079792B2 (ja) | 2017-02-15 |
JPWO2014115456A1 (ja) | 2017-01-26 |
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