JPWO2013140572A1 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JPWO2013140572A1 JPWO2013140572A1 JP2013548644A JP2013548644A JPWO2013140572A1 JP WO2013140572 A1 JPWO2013140572 A1 JP WO2013140572A1 JP 2013548644 A JP2013548644 A JP 2013548644A JP 2013548644 A JP2013548644 A JP 2013548644A JP WO2013140572 A1 JPWO2013140572 A1 JP WO2013140572A1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 123
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
第1導電膜、第2導電膜等の形態は、実施例1で説明した形態に限定されない。例えば、図7に示すような、表面部221a、第1コンタクト部223aおよび第2コンタクト部222aを有する第2導電膜220aであってもよい。第2導電膜220aでは、第1コンタクト部223aと第2コンタクト部222aとの間には、絶縁膜242が存在しておらず、第1コンタクト部223aと第2コンタクト部222aが互いに接している。また、図8,9に示すように、第1導電膜340aは、第2導電膜120aの下方において、矩形状の切欠き部分343aを有しており、切欠き部分343aに第2導電膜120aの第2コンタクト部122aが位置していてもよい。
Claims (3)
- 半導体素子が形成されたセル領域と、セル領域の周囲に設けられた非セル領域とを有する半導体基板と、
非セル領域の表面に形成されたフィールドプレート部とを備えた半導体装置であって、
非セル領域は、
第1導電型の基板層と、
基板層の表面に形成されており、セル領域の周囲に沿った第1方向に伸びてセル領域を囲むとともに、第1方向に直交する第2方向に間隔を空けて配置されている複数の第2導電型のFLR層とを備えており、
フィールドプレート部は、
半導体基板の表面に形成された絶縁膜と、
絶縁膜の内部にFLR層毎に形成されており、半導体基板を平面視したときに、対応するFLR層に沿って配置されている複数の第1導電膜と、
隣接する少なくとも2つのFLR層のそれぞれに対応して形成されており、半導体基板を平面視したときに、対応するFLR層に沿ってその一部に断続的に配置されており、絶縁膜の表面に形成されている表面部と、表面部から伸びるとともに絶縁膜を貫通して第1導電膜に電気的に接続する第1コンタクト部と、表面部から伸びるとともに絶縁膜を貫通してFLR層に電気的に接続している第2コンタクト部とを含む複数の第2導電膜とを備えており、
1つの第2導電膜の第1コンタクト部の第2方向に隣接する位置には、他の第2導電膜の第1コンタクト部が設けられておらず、
1つの第2導電膜の第2コンタクト部の第2方向に隣接する位置には、他の第2導電膜の第2コンタクト部が設けられていない、半導体装置。 - フィールドプレート部は、半導体基板を平面視したときに、対応する第2導電膜が形成されていないFLR層に沿って配置されており、絶縁膜の表面に形成されている表面部と、表面部から伸びるとともに絶縁膜を貫通してFLR層に電気的に接続している第3コンタクト部とを含む第3導電膜をさらに備えており、
第3導電膜は、複数の第2導電膜よりも半導体基板の周辺側に設けられている、請求項1に記載の半導体装置。 - 第2導電膜の第1方向の端部は、半導体基板を平面視したときの角部を除く部分に設けられている、請求項1または2に記載の半導体装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2012/057328 WO2013140572A1 (ja) | 2012-03-22 | 2012-03-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP5686203B2 JP5686203B2 (ja) | 2015-03-18 |
JPWO2013140572A1 true JPWO2013140572A1 (ja) | 2015-08-03 |
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JP2013548644A Active JP5686203B2 (ja) | 2012-03-22 | 2012-03-22 | 半導体装置 |
Country Status (6)
Country | Link |
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US (1) | US9178014B2 (ja) |
JP (1) | JP5686203B2 (ja) |
KR (1) | KR101561797B1 (ja) |
CN (1) | CN104170090B (ja) |
DE (1) | DE112012006068B8 (ja) |
WO (1) | WO2013140572A1 (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
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DE112013006681B4 (de) * | 2013-02-15 | 2022-01-20 | Denso Corporation | Halbleitervorrichtung |
CN104377234A (zh) * | 2014-11-05 | 2015-02-25 | 中国东方电气集团有限公司 | 采用金属截止场板的半导体器件终端单元结构及制造方法 |
CN106489208B (zh) * | 2015-01-29 | 2019-11-01 | 富士电机株式会社 | 半导体装置 |
JP6287958B2 (ja) | 2015-05-27 | 2018-03-07 | トヨタ自動車株式会社 | 半導体装置 |
JP6217708B2 (ja) | 2015-07-30 | 2017-10-25 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6565815B2 (ja) * | 2016-07-21 | 2019-08-28 | 株式会社デンソー | 半導体装置 |
JP6804379B2 (ja) | 2017-04-24 | 2020-12-23 | 三菱電機株式会社 | 半導体装置 |
JP6904279B2 (ja) * | 2018-02-27 | 2021-07-14 | 三菱電機株式会社 | 半導体装置およびその製造方法並びに電力変換装置 |
CN108511516A (zh) * | 2018-06-04 | 2018-09-07 | 中山汉臣电子科技有限公司 | 一种具有新型终端结构的功率半导体器件 |
CN114830333A (zh) * | 2019-12-23 | 2022-07-29 | 三菱电机株式会社 | 半导体装置及半导体模块 |
JP7492415B2 (ja) * | 2020-09-18 | 2024-05-29 | 株式会社東芝 | 半導体装置 |
CN113257888A (zh) * | 2021-03-31 | 2021-08-13 | 华为技术有限公司 | 一种功率半导体器件、封装结构及电子设备 |
JP2023087192A (ja) * | 2021-12-13 | 2023-06-23 | 株式会社 日立パワーデバイス | 半導体装置および電力変換装置 |
WO2023154046A1 (en) * | 2022-02-10 | 2023-08-17 | Vishay Siliconix Llc | Adaptive edge termination by design for efficient and rugged high voltage silicon carbide power device |
WO2023166827A1 (ja) * | 2022-03-04 | 2023-09-07 | ローム株式会社 | 半導体装置および半導体モジュール |
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JP5162804B2 (ja) | 2001-09-12 | 2013-03-13 | 富士電機株式会社 | 半導体装置 |
JP2003347547A (ja) | 2002-05-27 | 2003-12-05 | Mitsubishi Electric Corp | 電力用半導体装置及びその製造方法 |
JP5205856B2 (ja) * | 2007-01-11 | 2013-06-05 | 富士電機株式会社 | 電力用半導体素子 |
CN101345254A (zh) | 2007-07-12 | 2009-01-14 | 富士电机电子技术株式会社 | 半导体器件 |
JP2009117715A (ja) | 2007-11-08 | 2009-05-28 | Toshiba Corp | 半導体装置及びその製造方法 |
JP4945594B2 (ja) * | 2009-03-16 | 2012-06-06 | 株式会社東芝 | 電力用半導体装置 |
JP5224289B2 (ja) * | 2009-05-12 | 2013-07-03 | 三菱電機株式会社 | 半導体装置 |
JP2011082315A (ja) | 2009-10-07 | 2011-04-21 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JP5182766B2 (ja) * | 2009-12-16 | 2013-04-17 | 三菱電機株式会社 | 高耐圧半導体装置 |
JP5509908B2 (ja) * | 2010-02-19 | 2014-06-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
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- 2012-03-22 CN CN201280068176.XA patent/CN104170090B/zh active Active
- 2012-03-22 JP JP2013548644A patent/JP5686203B2/ja active Active
- 2012-03-22 US US14/383,942 patent/US9178014B2/en active Active
- 2012-03-22 DE DE112012006068.7T patent/DE112012006068B8/de active Active
- 2012-03-22 WO PCT/JP2012/057328 patent/WO2013140572A1/ja active Application Filing
- 2012-03-22 KR KR1020147025788A patent/KR101561797B1/ko active IP Right Grant
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Publication number | Publication date |
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CN104170090B (zh) | 2017-02-22 |
JP5686203B2 (ja) | 2015-03-18 |
US20150054118A1 (en) | 2015-02-26 |
DE112012006068B4 (de) | 2020-01-16 |
KR101561797B1 (ko) | 2015-10-19 |
DE112012006068T5 (de) | 2014-12-04 |
US9178014B2 (en) | 2015-11-03 |
KR20140124853A (ko) | 2014-10-27 |
CN104170090A (zh) | 2014-11-26 |
DE112012006068B8 (de) | 2020-03-19 |
WO2013140572A1 (ja) | 2013-09-26 |
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