JPWO2008111125A1 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JPWO2008111125A1 JPWO2008111125A1 JP2009503757A JP2009503757A JPWO2008111125A1 JP WO2008111125 A1 JPWO2008111125 A1 JP WO2008111125A1 JP 2009503757 A JP2009503757 A JP 2009503757A JP 2009503757 A JP2009503757 A JP 2009503757A JP WO2008111125 A1 JPWO2008111125 A1 JP WO2008111125A1
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- semiconductor device
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- insulating film
- composition
- silicon
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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Abstract
Description
TμCR
で表される性質を示す。
C=ε0εrS/D
として表される。
前記組成物の塗布後エネルギー付与処理を行ったものであること、前記エネルギー付与処理が、加熱処理、電子線照射処理、紫外線照射処理、X線照射処理およびこれらの任意の組合せからなる群から選ばれた処理であること、前記組成物がシランカップリング剤を含むこと、および前記組成物の塗布の前または後に、前記銅配線層上にシランカップリング剤を塗布したものであること、が好ましい。
2 銅配線
3 本発明に係る組成物層
4 絶縁膜
エチルトリアルコキシシラン,プロピルトリアルコキシシラン,フェニルトリアルコキシシラン,ビニルトリアルコキシシラン,アリルトリアルコキシシラン,
グリシジルトリアルコキシシラン,ジアルコキキシシラン,ジメチルジアルコキシシラン,ジエチルジアルコキシシラン,ジプロピルジアルコキシシラン,ジフェニルジアルコキシシラン,
ジビニルジアルコキシシラン,ジアリルジアルコキシシラン,ジグリシジルジアルコキシシラン,フェニルメチルジアルコキシシラン,フェニルエチルジアルコキシシラン,フェニルプロピルトリアルコキシシラン,
フェニルビニルジアルコキシシラン,フェニルアリルジアルコキシシラン,
フェニルグリシジルジアルコキシシラン,メチルビニルジアルコキシシラン,
エチルビニルジアルコキシシラン,プロピルビニルジアルコキシシランなどの加水分解/縮重合で形成したポリマに熱分解性の有機化合物等を添加して加熱により細孔を形成したものがある。なお、より好ましくは、4級アルキルアミンにより形成したクラスター状多孔質シリカ前駆体を用いるとよい。これは、空孔サイズが小さく、均一な空孔を有しているためである。
比較例1
Claims (20)
- 銅配線層を有する半導体装置であって、
銅配線層上に、アンモニアと有機塩基物質とからなる群から選ばれた少なくとも一つの物質を含む組成物を塗布してなる層と、その上にケイ素を含有する絶縁膜とを有する、
半導体装置。 - 前記少なくとも一つの物質がアミノ基を有する物質である、請求項1に記載の半導体装置。
- 前記絶縁膜がSi−OH基を含む、請求項1または2に記載の半導体装置。
- 前記銅配線層の銅表面にCu−O−Si結合が形成されている、請求項1〜3のいずれかに記載の半導体装置。
- 前記絶縁膜が、
ケイ素と酸素とを主成分とする組成か、または
ケイ素と酸素と炭素とを主成分とする組成か、または
ケイ素と酸素と窒素とを主成分とする組成
を有する、請求項1〜4のいずれかに記載の半導体装置。 - 前記絶縁膜が、ケイ素および炭素と窒素との少なくともいずれか一方および任意的に酸素を主鎖に含み、主鎖に結合する基が、ヒドロキシ基で置換されていてもよい炭化水素基である化合物から生成したものである、請求項1〜5のいずれかに記載の半導体装置。
- 前記組成物の塗布後エネルギー付与処理を行ったものである、請求項1〜7のいずれかに記載の半導体装置。
- 前記エネルギー付与処理が、加熱処理、電子線照射処理、紫外線照射処理、X線照射処理およびこれらの任意の組合せからなる群から選ばれた処理である、請求項8に記載の半導体装置。
- 銅配線層を有する半導体装置の製造方法であって、
銅配線層を形成し、
当該銅配線層上に、アンモニアと有機塩基物質とからなる群から選ばれた少なくとも一つの物質を含む組成物を塗布し、
その後ケイ素を含有する絶縁膜を形成する
ことを含む、半導体装置の製造方法。 - 前記少なくとも一つの物質がアミノ基を有する物質である、請求項10に記載の半導体装置の製造方法。
- 前記組成物の塗布前に前記銅配線層の銅表面が酸化されている、請求項10または11に記載の半導体装置の製造方法。
- 前記絶縁膜がSi−OH基を含む、請求項10〜12のいずれかに記載の半導体装置の製造方法。
- 前記銅配線層の銅表面にCu−O−Si結合が形成される、請求項10〜13のいずれかに記載の半導体装置の製造方法。
- 前記絶縁膜が、
ケイ素と酸素とを主成分とする組成か、または
ケイ素と酸素と炭素とを主成分とする組成か、または
ケイ素と酸素と窒素とを主成分とする組成
を有する、請求項10〜14のいずれかに記載の半導体装置の製造方法。 - 前記絶縁膜が、ケイ素および炭素と窒素との少なくともいずれか一方および任意的に酸素を主鎖に含み、主鎖に結合する基が、ヒドロキシ基で置換されていてもよい炭化水素基である化合物から生成したものである、請求項10〜15のいずれかに記載の半導体装置の製造方法。
- 前記組成物の塗布後エネルギー付与処理を行う、請求項10〜17のいずれかに記載の半導体装置の製造方法。
- 前記エネルギー付与処理が、加熱処理、電子線照射処理、紫外線照射処理、X線照射処理およびこれらの任意の組合せからなる群から選ばれた処理である、請求項18に記載の半導体装置の製造方法。
- 請求項10〜19のいずれかに記載の半導体装置の製造方法を用いて製造された半導体装置。
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