KR20100005046A - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents
반도체 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR20100005046A KR20100005046A KR1020097019958A KR20097019958A KR20100005046A KR 20100005046 A KR20100005046 A KR 20100005046A KR 1020097019958 A KR1020097019958 A KR 1020097019958A KR 20097019958 A KR20097019958 A KR 20097019958A KR 20100005046 A KR20100005046 A KR 20100005046A
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- semiconductor device
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- insulating film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 56
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- 239000000126 substance Substances 0.000 claims abstract description 15
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- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
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- FQYRLEXKXQRZDH-UHFFFAOYSA-N 4-aminoquinoline Chemical compound C1=CC=C2C(N)=CC=NC2=C1 FQYRLEXKXQRZDH-UHFFFAOYSA-N 0.000 description 1
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- GETQZCLCWQTVFV-UHFFFAOYSA-N anhydrous trimethylamine Natural products CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 1
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- 125000006267 biphenyl group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/3121—Layers comprising organo-silicon compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
예 | Cu-O-Si 결합의 유무 | 밀착성 시험에서의 막분리(10개중) |
실시예 1 | 존재 | 2개 |
실시예 2 | 존재 | 1개 |
비교예 1 | 부존재 | 10개 |
Claims (20)
- 구리 배선층을 갖는 반도체 장치로서,구리 배선층 상에, 암모니아와 유기 염기 물질로 이루어지는 군으로부터 선택된 적어도 하나의 물질을 함유하는 조성물을 도포하여 이루어지는 층과, 그 위에 규소를 함유하는 절연막을 갖는 것인 반도체 장치.
- 제1항에 있어서, 상기 적어도 하나의 물질이 아미노기를 갖는 물질인 것인 반도체 장치.
- 제1항 또는 제2항에 있어서, 상기 절연막이 Si-OH기를 포함하는 것인 반도체 장치.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 구리 배선층의 구리 표면에 Cu-O-Si 결합이 형성되어 있는 것인 반도체 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 절연막이규소와 산소를 주성분으로 하는 조성이거나, 또는규소와 산소와 탄소를 주성분으로 하는 조성이거나, 또는규소와 산소와 질소를 주성분으로 하는 조성을 갖는 것인 반도체 장치.
- 제1항 내지 제5항 중 어느 한 항에 있어서, 상기 절연막이 규소 및 탄소와 질소 중 적어도 어느 한쪽 및 임의적으로 산소를 주쇄에 포함하고, 주쇄에 결합하는 기가 히드록시기로 치환되어 있어도 좋은 탄화수소기인 화합물로부터 생성된 것인 반도체 장치.
- 제6항에 있어서, 상기 화합물이 하기 화학식 1로 표시되는 폴리카르보실란, 하기 화학식 2로 표시되는 폴리실라잔 및 이들의 규소 화합물의 R1∼R3을 전부 또는 부분적으로 OH기로 치환한 화합물로 이루어진 군으로부터 선택된 것인 반도체 장치:[상기 화학식 1, 화학식 2에 있어서, R1, R2 및 R3은 서로 독립적으로, 또한 화학식 1, 화학식 2 사이에서 독립적으로, 각각, 수소 원자, 치환 혹은 비치환의 알킬기, 치환 혹은 비치환의 알케닐기, 치환 혹은 비치환의 시클로알킬기 또는 치환 혹은 비치환의 아릴기를 나타내고, n은 10∼1000의 정수이다].
- 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 조성물의 도포 후 에너지 부여 처리를 행한 것인 반도체 장치.
- 제8항에 있어서, 상기 에너지 부여 처리가 가열 처리, 전자선 조사 처리, 자외선 조사 처리, X선 조사 처리 및 이들의 임의의 조합으로 이루어진 군으로부터 선택된 처리인 것인 반도체 장치.
- 구리 배선층을 갖는 반도체 장치의 제조 방법으로서,구리 배선층을 형성하고,상기 구리 배선층 상에, 암모니아와 유기 염기 물질로 이루어지는 군으로부터 선택된 적어도 하나의 물질을 함유하는 조성물을 도포하며,그 후 규소를 함유하는 절연막을 형성하는 것을 포함하는 것인 반도체 장치의 제조 방법.
- 제10항에 있어서, 상기 적어도 하나의 물질이 아미노기를 갖는 물질인 것인 반도체 장치의 제조 방법.
- 제10항 또는 제11항에 있어서, 상기 조성물의 도포 전에 상기 구리 배선층의 구리 표면이 산화되어 있는 것인 반도체 장치의 제조 방법.
- 제10항 내지 제12항 중 어느 한 항에 있어서, 상기 절연막이 Si-OH기를 포함하는 것인 반도체 장치의 제조 방법.
- 제10항 내지 제13항 중 어느 한 항에 있어서, 상기 구리 배선층의 구리 표면에 Cu-O-Si 결합이 형성되는 것인 반도체 장치의 제조 방법.
- 제10항 내지 제14항 중 어느 한 항에 있어서, 상기 절연막이 규소와 산소를 주성분으로 하는 조성이거나, 또는규소와 산소와 탄소를 주성분으로 하는 조성이거나, 또는규소와 산소와 질소를 주성분으로 하는 조성을 갖는 것인 반도체 장치의 제조 방법.
- 제10항 내지 제15항 중 어느 한 항에 있어서, 상기 절연막이 규소 및 탄소와 질소 중 적어도 어느 한쪽 및 임의적으로 산소를 주쇄에 포함하고, 주쇄에 결합하는 기가 히드록시기로 치환되어 있어도 좋은 탄화수소기인 화합물로부터 생성된 것인 반도체 장치의 제조 방법.
- 제16항에 있어서, 상기 화합물이 하기 화학식 1로 표시되는 폴리카르보실란, 하기 화학식 2로 표시되는 폴리실라잔 및 이들의 규소 화합물의 R1∼R3을 전부 또는 부분적으로 OH기로 치환한 화합물로 이루어진 군으로부터 선택된 것인 반도체 장치의 제조 방법:[상기 화학식 1, 화학식 2에 있어서, R1, R2 및 R3은 서로 독립적으로, 또한 화학식 1, 화학식 2 사이에서 독립적으로, 각각, 수소 원자, 치환 혹은 비치환의 알킬기, 치환 혹은 비치환의 알케닐기, 치환 혹은 비치환의 시클로알킬기 또는 치환 혹은 비치환의 아릴기를 나타내고, n은 10∼1000의 정수이다].
- 제10항 내지 제17항 중 어느 한 항에 있어서, 상기 조성물의 도포 후 에너지 부여 처리를 행하는 것인 반도체 장치의 제조 방법.
- 제18항에 있어서, 상기 에너지 부여 처리가 가열 처리, 전자선 조사 처리, 자외선 조사 처리, X선 조사 처리 및 이들의 임의의 조합으로 이루어진 군으로부터 선택된 처리인 것인 반도체 장치의 제조 방법.
- 제10항 내지 제19항 중 어느 한 항에 기재한 반도체 장치의 제조 방법을 이용하여 제조된 반도체 장치.
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