JPS5550663A - Semiconductor device and method of fabricating the same - Google Patents

Semiconductor device and method of fabricating the same

Info

Publication number
JPS5550663A
JPS5550663A JP12402178A JP12402178A JPS5550663A JP S5550663 A JPS5550663 A JP S5550663A JP 12402178 A JP12402178 A JP 12402178A JP 12402178 A JP12402178 A JP 12402178A JP S5550663 A JPS5550663 A JP S5550663A
Authority
JP
Japan
Prior art keywords
film
sio
substrate
semiconductor device
hcl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12402178A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6245712B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP12402178A priority Critical patent/JPS5550663A/ja
Publication of JPS5550663A publication Critical patent/JPS5550663A/ja
Publication of JPS6245712B2 publication Critical patent/JPS6245712B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP12402178A 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same Granted JPS5550663A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12402178A JPS5550663A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12402178A JPS5550663A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP61228765A Division JPS6263475A (ja) 1986-09-27 1986-09-27 半導体装置
JP62037568A Division JPS62216273A (ja) 1987-02-20 1987-02-20 半導体装置
JP62037567A Division JPS62216272A (ja) 1987-02-20 1987-02-20 半導体装置

Publications (2)

Publication Number Publication Date
JPS5550663A true JPS5550663A (en) 1980-04-12
JPS6245712B2 JPS6245712B2 (enrdf_load_stackoverflow) 1987-09-28

Family

ID=14875059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12402178A Granted JPS5550663A (en) 1978-10-07 1978-10-07 Semiconductor device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS5550663A (enrdf_load_stackoverflow)

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof
JPS5884466A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS5884464A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS5884465A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS58123772A (ja) * 1982-01-19 1983-07-23 Canon Inc 半導体素子
JPS58123770A (ja) * 1982-01-18 1983-07-23 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置およびその作製方法
JPS58123771A (ja) * 1982-01-19 1983-07-23 Canon Inc 半導体素子
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
JPS58199564A (ja) * 1982-05-17 1983-11-19 Canon Inc 半導体素子
JPS5943575A (ja) * 1982-09-02 1984-03-10 Canon Inc 半導体素子
JPS5965479A (ja) * 1982-10-05 1984-04-13 Nec Corp 薄膜トランジスタとその製造方法
JPS59124163A (ja) * 1982-12-29 1984-07-18 Canon Inc 半導体素子
JPS6068654A (ja) * 1983-08-25 1985-04-19 Tadahiro Omi 半導体集積回路
JPS60136259A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法
JPH01276726A (ja) * 1988-04-28 1989-11-07 Seiko Epson Corp 半導体装置の製造方法
JPH05243578A (ja) * 1992-11-20 1993-09-21 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH05251340A (ja) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05259184A (ja) * 1992-11-20 1993-10-08 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
JPH05343318A (ja) * 1980-09-16 1993-12-24 Semiconductor Energy Lab Co Ltd 半導体装置
JPH06125088A (ja) * 1984-05-18 1994-05-06 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH06333950A (ja) * 1994-01-27 1994-12-02 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置作製方法
JPH077156A (ja) * 1993-09-13 1995-01-10 Sony Corp 電界効果型薄膜トランジスタ
JPH0792498A (ja) * 1994-02-14 1995-04-07 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH0799316A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH0799208A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法
JPH07176759A (ja) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
JPH07176758A (ja) * 1984-05-18 1995-07-14 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH07176746A (ja) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH07183523A (ja) * 1994-11-25 1995-07-21 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
JPH0851221A (ja) * 1995-09-01 1996-02-20 Semiconductor Energy Lab Co Ltd 液晶表示パネル用絶縁ゲート型電界効果半導体装置およびその作製方法
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH09181327A (ja) * 1996-11-29 1997-07-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH09181326A (ja) * 1984-05-18 1997-07-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH09186344A (ja) * 1996-11-29 1997-07-15 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
US5766977A (en) * 1995-03-27 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (enrdf_load_stackoverflow) * 1973-09-12 1975-05-15

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5055281A (enrdf_load_stackoverflow) * 1973-09-12 1975-05-15

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPH05343318A (ja) * 1980-09-16 1993-12-24 Semiconductor Energy Lab Co Ltd 半導体装置
JPS57115868A (en) * 1981-01-09 1982-07-19 Semiconductor Energy Lab Co Ltd Insulated gate type semiconductor device and manufacture thereof
JPS5884466A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS5884464A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS5884465A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS58123770A (ja) * 1982-01-18 1983-07-23 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置およびその作製方法
JPS58123771A (ja) * 1982-01-19 1983-07-23 Canon Inc 半導体素子
JPS58123772A (ja) * 1982-01-19 1983-07-23 Canon Inc 半導体素子
JPS58197775A (ja) * 1982-05-13 1983-11-17 Canon Inc 薄膜トランジスタ
JPS58199564A (ja) * 1982-05-17 1983-11-19 Canon Inc 半導体素子
JPS5943575A (ja) * 1982-09-02 1984-03-10 Canon Inc 半導体素子
JPS5965479A (ja) * 1982-10-05 1984-04-13 Nec Corp 薄膜トランジスタとその製造方法
JPS59124163A (ja) * 1982-12-29 1984-07-18 Canon Inc 半導体素子
JPS6068654A (ja) * 1983-08-25 1985-04-19 Tadahiro Omi 半導体集積回路
JPS60136259A (ja) * 1983-12-24 1985-07-19 Sony Corp 電界効果型トランジスタの製造方法
US6680486B1 (en) 1984-05-18 2004-01-20 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
US6734499B1 (en) 1984-05-18 2004-05-11 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPH06125088A (ja) * 1984-05-18 1994-05-06 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
US6635520B1 (en) 1984-05-18 2003-10-21 Semiconductor Energy Laboratory Co., Ltd. Operation method of semiconductor devices
JPH07176758A (ja) * 1984-05-18 1995-07-14 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
US6221701B1 (en) 1984-05-18 2001-04-24 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor and its manufacturing method
JPH09181326A (ja) * 1984-05-18 1997-07-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
US5543636A (en) * 1984-05-18 1996-08-06 Semiconductor Energy Laboratory Co., Ltd. Insulated gate field effect transistor
JPH01276726A (ja) * 1988-04-28 1989-11-07 Seiko Epson Corp 半導体装置の製造方法
US6011277A (en) * 1990-11-20 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5859445A (en) * 1990-11-20 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device including thin film transistors having spoiling impurities added thereto
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US6023075A (en) * 1990-12-25 2000-02-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JPH05251340A (ja) * 1991-06-28 1993-09-28 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6693681B1 (en) 1992-04-28 2004-02-17 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US7554616B1 (en) 1992-04-28 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
US6337731B1 (en) 1992-04-28 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JPH05259184A (ja) * 1992-11-20 1993-10-08 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
JPH05243578A (ja) * 1992-11-20 1993-09-21 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH077156A (ja) * 1993-09-13 1995-01-10 Sony Corp 電界効果型薄膜トランジスタ
JPH06333950A (ja) * 1994-01-27 1994-12-02 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置作製方法
JPH0792498A (ja) * 1994-02-14 1995-04-07 Seiko Epson Corp 薄膜トランジスタの製造方法
JPH0799208A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 液晶表示パネル用絶縁ゲート型電界効果半導体装置の作製方法
JPH0799316A (ja) * 1994-06-10 1995-04-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH07176746A (ja) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置
JPH07176759A (ja) * 1994-11-25 1995-07-14 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
JPH07183523A (ja) * 1994-11-25 1995-07-21 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
US5766977A (en) * 1995-03-27 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device
JPH0851221A (ja) * 1995-09-01 1996-02-20 Semiconductor Energy Lab Co Ltd 液晶表示パネル用絶縁ゲート型電界効果半導体装置およびその作製方法
JPH09186344A (ja) * 1996-11-29 1997-07-15 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置の作製方法
JPH09181327A (ja) * 1996-11-29 1997-07-11 Semiconductor Energy Lab Co Ltd 絶縁ゲート型電界効果半導体装置

Also Published As

Publication number Publication date
JPS6245712B2 (enrdf_load_stackoverflow) 1987-09-28

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