JPS5515229A - Semiconductor photograph device - Google Patents

Semiconductor photograph device

Info

Publication number
JPS5515229A
JPS5515229A JP8798878A JP8798878A JPS5515229A JP S5515229 A JPS5515229 A JP S5515229A JP 8798878 A JP8798878 A JP 8798878A JP 8798878 A JP8798878 A JP 8798878A JP S5515229 A JPS5515229 A JP S5515229A
Authority
JP
Japan
Prior art keywords
gate
electrode
layer
drain
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8798878A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6149822B2 (ko
Inventor
Junichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP8798878A priority Critical patent/JPS5515229A/ja
Priority to US06/039,445 priority patent/US4427990A/en
Publication of JPS5515229A publication Critical patent/JPS5515229A/ja
Publication of JPS6149822B2 publication Critical patent/JPS6149822B2/ja
Priority to US07/332,441 priority patent/US5019876A/en
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14679Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Junction Field-Effect Transistors (AREA)
JP8798878A 1978-07-14 1978-07-18 Semiconductor photograph device Granted JPS5515229A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP8798878A JPS5515229A (en) 1978-07-18 1978-07-18 Semiconductor photograph device
US06/039,445 US4427990A (en) 1978-07-14 1979-05-15 Semiconductor photo-electric converter with insulated gate over p-n charge storage region
US07/332,441 US5019876A (en) 1978-07-14 1989-04-04 Semiconductor photo-electric converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8798878A JPS5515229A (en) 1978-07-18 1978-07-18 Semiconductor photograph device

Publications (2)

Publication Number Publication Date
JPS5515229A true JPS5515229A (en) 1980-02-02
JPS6149822B2 JPS6149822B2 (ko) 1986-10-31

Family

ID=13930187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8798878A Granted JPS5515229A (en) 1978-07-14 1978-07-18 Semiconductor photograph device

Country Status (1)

Country Link
JP (1) JPS5515229A (ko)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS58112867U (ja) * 1982-01-26 1983-08-02 カルソニックカンセイ株式会社 熱交換器
EP0096725A1 (en) * 1981-12-17 1983-12-28 NISHIZAWA, Junichi Semiconductor image pick-up device
DE3345135A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345147A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345175A1 (de) * 1982-12-14 1984-06-14 Nishizawa Junichi Festkoerper-bildaufnahmewandlerelement
DE3345176A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3344637A1 (de) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Photoelektrischer halbleiterwandler
DE3345238A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345190A1 (de) * 1982-12-14 1984-06-14 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildaufnahmewandlerelement
DE3345189A1 (de) * 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
EP0111346A2 (en) * 1982-12-13 1984-06-20 NISHIZAWA, Junichi One-dimensional semiconductor imaging device
JPS59108346A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa 固体撮像装置の製造方法
EP0111880A2 (en) * 1982-12-13 1984-06-27 NISHIZAWA, Junichi Semiconductor image device
DE3407038A1 (de) * 1983-02-28 1984-08-30 Nishizawa, Jun-Ichi, Sendai, Miyagi Halbleiter-photodetektor und verfahren zu dessen antrieb
JPS59158680A (ja) * 1983-03-01 1984-09-08 Junichi Nishizawa 固体撮像装置
EP0118568A1 (en) * 1982-09-09 1984-09-19 NISHIZAWA, Junichi Semiconductor image pickup device
JPS6012760A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置及び光電変換方法
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPS60105272A (ja) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd 固体撮像装置
FR2557729A1 (fr) * 1983-12-28 1985-07-05 Olympus Optical Co Dispositif convertisseur photoelectrique a semi-conducteurs
DE3513436A1 (de) 1984-04-17 1985-10-31 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildsensor
US4857981A (en) * 1986-07-03 1989-08-15 Olympus Optical Co., Ltd. Semiconductor imaging device
JPH0340467A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JPH0340570A (ja) * 1990-07-02 1991-02-21 Canon Inc 光トランジスタのリフレッシュ方法
JPH0340574A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置

Cited By (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5735369A (en) * 1980-08-11 1982-02-25 Mitsubishi Electric Corp Semiconductor device
JPS57136361A (en) * 1981-02-17 1982-08-23 Semiconductor Energy Lab Co Ltd Semiconductor device
EP0096725A1 (en) * 1981-12-17 1983-12-28 NISHIZAWA, Junichi Semiconductor image pick-up device
EP0096725A4 (en) * 1981-12-17 1985-07-01 Fuji Photo Film Co Ltd SEMICONDUCTOR IMAGE PICKUP DEVICE.
JPS58112867U (ja) * 1982-01-26 1983-08-02 カルソニックカンセイ株式会社 熱交換器
EP0118568A4 (en) * 1982-09-09 1985-12-19 Fuji Photo Film Co Ltd SEMICONDUCTOR IMAGE TAKING DEVICE.
EP0118568A1 (en) * 1982-09-09 1984-09-19 NISHIZAWA, Junichi Semiconductor image pickup device
DE3344637A1 (de) * 1982-12-11 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Photoelektrischer halbleiterwandler
EP0111346A2 (en) * 1982-12-13 1984-06-20 NISHIZAWA, Junichi One-dimensional semiconductor imaging device
EP0111880A3 (en) * 1982-12-13 1985-12-18 Nishizawa, Jun-Ichi Semiconductor image device
EP0111346A3 (en) * 1982-12-13 1985-10-09 Nishizawa, Jun-Ichi One-dimensional semiconductor imaging device
EP0111880A2 (en) * 1982-12-13 1984-06-27 NISHIZAWA, Junichi Semiconductor image device
DE3345176A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345175A1 (de) * 1982-12-14 1984-06-14 Nishizawa Junichi Festkoerper-bildaufnahmewandlerelement
DE3345189A1 (de) * 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
US4684968A (en) * 1982-12-14 1987-08-04 Olympus Optical Co., Ltd. JFET imager having light sensing inversion layer induced by insulator charge
DE3345135A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345147A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
DE3345190A1 (de) * 1982-12-14 1984-06-14 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildaufnahmewandlerelement
JPS59108346A (ja) * 1982-12-14 1984-06-22 Junichi Nishizawa 固体撮像装置の製造方法
DE3345238A1 (de) 1982-12-14 1984-06-14 Nishizawa, Jun-Ichi, Sendai, Miyagi Festkoerper-bildaufnahmewandler
JPH0475667B2 (ko) * 1982-12-14 1992-12-01 Junichi Nishizawa
JPH0458698B2 (ko) * 1983-02-28 1992-09-18 Fuji Photo Film Co Ltd
JPS59158551A (ja) * 1983-02-28 1984-09-08 Fuji Photo Film Co Ltd 半導体光検出装置及びその駆動方法
DE3407038A1 (de) * 1983-02-28 1984-08-30 Nishizawa, Jun-Ichi, Sendai, Miyagi Halbleiter-photodetektor und verfahren zu dessen antrieb
JPH0473346B2 (ko) * 1983-03-01 1992-11-20 Junichi Nishizawa
JPS59158680A (ja) * 1983-03-01 1984-09-08 Junichi Nishizawa 固体撮像装置
JPH0448025B2 (ko) * 1983-07-02 1992-08-05 Canon Kk
JPS6012760A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置及び光電変換方法
JPS6058781A (ja) * 1983-09-09 1985-04-04 Olympus Optical Co Ltd 固体撮像装置
JPH0453149B2 (ko) * 1983-09-09 1992-08-25 Olympus Optical Co
JPS60105272A (ja) * 1983-11-14 1985-06-10 Olympus Optical Co Ltd 固体撮像装置
FR2557729A1 (fr) * 1983-12-28 1985-07-05 Olympus Optical Co Dispositif convertisseur photoelectrique a semi-conducteurs
DE3513436A1 (de) 1984-04-17 1985-10-31 Olympus Optical Co., Ltd., Tokio/Tokyo Festkoerper-bildsensor
US4857981A (en) * 1986-07-03 1989-08-15 Olympus Optical Co., Ltd. Semiconductor imaging device
JPH0340467A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JPH0340570A (ja) * 1990-07-02 1991-02-21 Canon Inc 光トランジスタのリフレッシュ方法
JPH0340574A (ja) * 1990-07-02 1991-02-21 Canon Inc 光電変換装置
JPH0449311B2 (ko) * 1990-07-02 1992-08-11 Canon Kk
JPH0449310B2 (ko) * 1990-07-02 1992-08-11 Canon Kk
JPH0449309B2 (ko) * 1990-07-02 1992-08-11 Canon Kk

Also Published As

Publication number Publication date
JPS6149822B2 (ko) 1986-10-31

Similar Documents

Publication Publication Date Title
JPS5515229A (en) Semiconductor photograph device
JPS55120182A (en) Photoelectric converter
JPS55162224A (en) Preparation of semiconductor device
JPS56169359A (en) Semiconductor integrated circuit device
JPS5562771A (en) Integrated circuit device
JPS54156483A (en) Non-volatile semiconductor memory device
JPS575359A (en) Semiconductor device
JPS5522881A (en) Manufacturing method of semiconductor device
JPS5567161A (en) Semiconductor memory storage
JPS5493366A (en) Bipolar type transistor
JPS57121271A (en) Field effect transistor
JPS5567160A (en) Semiconductor memory storage
JPS56147469A (en) Semiconductor device
JPS556841A (en) Planar type semiconductor device
JPS5522885A (en) Insulation gate type field effect semiconductor device
JPS57136362A (en) Semiconductor device
JPS54129984A (en) Manufacture of semiconductor device
JPS5418286A (en) Semiconductor device
JPS5731173A (en) Semiconductor device
JPS57111880A (en) Semiconductor storage device
JPS6489370A (en) Semiconductor storage device
JPS55102274A (en) Insulated gate field effect transistor
JPS575346A (en) Semiconductor device and manufacture thereof
JPS5779660A (en) Semiconductor memory device
JPS5583265A (en) Semiconductor device and method of fabricating the same