JPH1197352A5 - - Google Patents

Info

Publication number
JPH1197352A5
JPH1197352A5 JP1998151543A JP15154398A JPH1197352A5 JP H1197352 A5 JPH1197352 A5 JP H1197352A5 JP 1998151543 A JP1998151543 A JP 1998151543A JP 15154398 A JP15154398 A JP 15154398A JP H1197352 A5 JPH1197352 A5 JP H1197352A5
Authority
JP
Japan
Prior art keywords
amorphous silicon
silicon film
region
metal element
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998151543A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1197352A (ja
JP4180689B2 (ja
Filing date
Publication date
Priority claimed from JP15154398A external-priority patent/JP4180689B2/ja
Priority to JP15154398A priority Critical patent/JP4180689B2/ja
Application filed filed Critical
Priority to US09/120,244 priority patent/US6432756B1/en
Priority to KR1019980029785A priority patent/KR100596343B1/ko
Publication of JPH1197352A publication Critical patent/JPH1197352A/ja
Priority to US10/214,693 priority patent/US20030010982A1/en
Priority to US10/656,239 priority patent/US6974732B2/en
Publication of JPH1197352A5 publication Critical patent/JPH1197352A5/ja
Publication of JP4180689B2 publication Critical patent/JP4180689B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP15154398A 1997-07-24 1998-06-01 半導体装置の作製方法 Expired - Fee Related JP4180689B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP15154398A JP4180689B2 (ja) 1997-07-24 1998-06-01 半導体装置の作製方法
US09/120,244 US6432756B1 (en) 1997-07-24 1998-07-22 Semiconductor device and fabricating method thereof
KR1019980029785A KR100596343B1 (ko) 1997-07-24 1998-07-24 반도체장치및그제조방법
US10/214,693 US20030010982A1 (en) 1997-07-24 2002-08-09 Semiconductor device and fabricating method thereof
US10/656,239 US6974732B2 (en) 1997-07-24 2003-09-08 Semiconductor device method of manufacturing

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP21600297 1997-07-24
JP9-216002 1997-07-24
JP15154398A JP4180689B2 (ja) 1997-07-24 1998-06-01 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH1197352A JPH1197352A (ja) 1999-04-09
JPH1197352A5 true JPH1197352A5 (enExample) 2005-10-06
JP4180689B2 JP4180689B2 (ja) 2008-11-12

Family

ID=26480761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15154398A Expired - Fee Related JP4180689B2 (ja) 1997-07-24 1998-06-01 半導体装置の作製方法

Country Status (3)

Country Link
US (3) US6432756B1 (enExample)
JP (1) JP4180689B2 (enExample)
KR (1) KR100596343B1 (enExample)

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JPH0869967A (ja) * 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JPH1140498A (ja) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7166500B2 (en) * 1997-10-21 2007-01-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
JP4853845B2 (ja) * 1999-09-17 2012-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7503975B2 (en) * 2000-06-27 2009-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method therefor
KR100439345B1 (ko) * 2000-10-31 2004-07-07 피티플러스(주) 폴리실리콘 활성층을 포함하는 박막트랜지스터 및 제조 방법
TW515104B (en) * 2000-11-06 2002-12-21 Semiconductor Energy Lab Electro-optical device and method of manufacturing the same
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JP4115158B2 (ja) 2002-04-24 2008-07-09 シャープ株式会社 半導体装置およびその製造方法
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
US8187627B2 (en) 2003-09-05 2012-05-29 Loma Linda University Medical Center Dressing delivery system for internal wounds
US7276402B2 (en) * 2003-12-25 2007-10-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7507617B2 (en) * 2003-12-25 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
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KR20070053708A (ko) * 2004-08-04 2007-05-25 포움 서플라이즈 인코포레이션 폴리우레탄 폼에서의 반응도 변동 및 촉매 분해
KR100611762B1 (ko) * 2004-08-20 2006-08-10 삼성에스디아이 주식회사 박막트랜지스터의 제조 방법
US7416928B2 (en) * 2004-09-08 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8088676B2 (en) * 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
JP2007073855A (ja) * 2005-09-09 2007-03-22 Toshiba Corp 半導体薄膜の製造方法、電子デバイスの製造方法及び液晶表示デバイスの製造方法
KR100738659B1 (ko) * 2006-04-11 2007-07-11 한국과학기술원 니켈 할로겐 화합물 분위기를 이용한 다결정 규소박막의제조방법
US8598463B2 (en) 2010-08-05 2013-12-03 Unimicron Technology Corp. Circuit board and manufacturing method thereof
GB201210439D0 (en) * 2012-06-13 2012-07-25 Softcell Medicals Apparatus
CN105813585B (zh) * 2013-10-07 2020-01-10 泰克尼恩研究和发展基金有限公司 通过杆操纵实现的针转向
US9576923B2 (en) 2014-04-01 2017-02-21 Ati Technologies Ulc Semiconductor chip with patterned underbump metallization and polymer film

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