JP2002367905A5 - - Google Patents

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Publication number
JP2002367905A5
JP2002367905A5 JP2002101156A JP2002101156A JP2002367905A5 JP 2002367905 A5 JP2002367905 A5 JP 2002367905A5 JP 2002101156 A JP2002101156 A JP 2002101156A JP 2002101156 A JP2002101156 A JP 2002101156A JP 2002367905 A5 JP2002367905 A5 JP 2002367905A5
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JP
Japan
Prior art keywords
film
conductive film
semiconductor
semiconductor device
manufacturing
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Application number
JP2002101156A
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English (en)
Japanese (ja)
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JP4642310B2 (ja
JP2002367905A (ja
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Priority to JP2002101156A priority Critical patent/JP4642310B2/ja
Priority claimed from JP2002101156A external-priority patent/JP4642310B2/ja
Publication of JP2002367905A publication Critical patent/JP2002367905A/ja
Publication of JP2002367905A5 publication Critical patent/JP2002367905A5/ja
Application granted granted Critical
Publication of JP4642310B2 publication Critical patent/JP4642310B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2002101156A 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置 Expired - Fee Related JP4642310B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002101156A JP4642310B2 (ja) 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001108058 2001-04-06
JP2001-108058 2001-04-06
JP2002101156A JP4642310B2 (ja) 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置

Publications (3)

Publication Number Publication Date
JP2002367905A JP2002367905A (ja) 2002-12-20
JP2002367905A5 true JP2002367905A5 (enExample) 2005-09-15
JP4642310B2 JP4642310B2 (ja) 2011-03-02

Family

ID=26613193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002101156A Expired - Fee Related JP4642310B2 (ja) 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置

Country Status (1)

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JP (1) JP4642310B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4631250B2 (ja) * 2003-04-22 2011-02-16 セイコーエプソン株式会社 半導体装置の製造方法及び半導体装置、並びにこれを備えた電気光学装置及び電子機器
JP2005136138A (ja) * 2003-10-30 2005-05-26 Sony Corp 薄膜半導体装置の製造方法、薄膜半導体装置、表示装置の製造方法、および表示装置
JP2007324425A (ja) * 2006-06-02 2007-12-13 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
JP2008034826A (ja) * 2006-06-26 2008-02-14 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置、ラテラルバイポーラ薄膜トランジスタ、ハイブリッド薄膜トランジスタ、ｍｏｓ薄膜トランジス、及び薄膜トランジスタの製造方法
US7977752B2 (en) 2006-06-26 2011-07-12 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
WO2008099700A1 (ja) * 2007-02-16 2008-08-21 Sharp Kabushiki Kaisha ダブルゲートトランジスタおよびその製造方法ならびにダブルゲートトランジスタを備えるアクティブマトリクス基板
JP2009016667A (ja) * 2007-07-06 2009-01-22 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
JP5574312B2 (ja) * 2008-03-25 2014-08-20 国立大学法人山口大学 多結晶シリコン結晶粒界改質方法及び装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290769A (ja) * 1985-06-19 1986-12-20 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPS6298774A (ja) * 1985-10-25 1987-05-08 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPH02130913A (ja) * 1988-11-11 1990-05-18 Seiko Epson Corp 薄膜半導体装置
JPH04286335A (ja) * 1991-03-15 1992-10-12 Seiko Epson Corp 薄膜半導体装置の製造方法
JP3181901B2 (ja) * 1994-09-30 2001-07-03 株式会社半導体エネルギー研究所 薄膜トランジスタ
JPH10150202A (ja) * 1996-11-20 1998-06-02 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH10173192A (ja) * 1996-12-09 1998-06-26 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4493750B2 (ja) * 1998-07-15 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000260709A (ja) * 1999-03-09 2000-09-22 Fujitsu Ltd 半導体薄膜の結晶化方法及びそれを用いた半導体装置
JP2000286211A (ja) * 1999-03-31 2000-10-13 Seiko Epson Corp 薄膜半導体装置の製造方法
JP2002110542A (ja) * 2000-09-28 2002-04-12 Toshiba Corp Ｓｉ系半導体薄膜の製造方法、薄膜トランジスタ

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