JP4642310B2 - 薄膜半導体装置の製造方法および薄膜半導体装置 - Google Patents

薄膜半導体装置の製造方法および薄膜半導体装置 Download PDF

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Publication number
JP4642310B2
JP4642310B2 JP2002101156A JP2002101156A JP4642310B2 JP 4642310 B2 JP4642310 B2 JP 4642310B2 JP 2002101156 A JP2002101156 A JP 2002101156A JP 2002101156 A JP2002101156 A JP 2002101156A JP 4642310 B2 JP4642310 B2 JP 4642310B2
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film
semiconductor film
conductive film
active
semiconductor
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Japanese (ja)
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JP2002367905A (ja
JP2002367905A5 (enExample
Inventor
寛明 次六
光敏 宮坂
哲也 小川
秀忠 時岡
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Seiko Epson Corp
Mitsubishi Electric Corp
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Seiko Epson Corp
Mitsubishi Electric Corp
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Publication of JP2002367905A5 publication Critical patent/JP2002367905A5/ja
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2002101156A 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置 Expired - Fee Related JP4642310B2 (ja)

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JP2002101156A JP4642310B2 (ja) 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置

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JP2001-108058 2001-04-06
JP2001108058 2001-04-06
JP2002101156A JP4642310B2 (ja) 2001-04-06 2002-04-03 薄膜半導体装置の製造方法および薄膜半導体装置

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JP2002367905A JP2002367905A (ja) 2002-12-20
JP2002367905A5 JP2002367905A5 (enExample) 2005-09-15
JP4642310B2 true JP4642310B2 (ja) 2011-03-02

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4631250B2 (ja) * 2003-04-22 2011-02-16 セイコーエプソン株式会社 半導体装置の製造方法及び半導体装置、並びにこれを備えた電気光学装置及び電子機器
JP2005136138A (ja) * 2003-10-30 2005-05-26 Sony Corp 薄膜半導体装置の製造方法、薄膜半導体装置、表示装置の製造方法、および表示装置
JP2007324425A (ja) * 2006-06-02 2007-12-13 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
US7977752B2 (en) 2006-06-26 2011-07-12 Advanced Lcd Technologies Development Center Co., Ltd. Thin-film semiconductor device, lateral bipolar thin-film transistor, hybrid thin-film transistor, MOS thin-film transistor, and method of fabricating thin-film transistor
JP2008034826A (ja) * 2006-06-26 2008-02-14 Advanced Lcd Technologies Development Center Co Ltd 薄膜半導体装置、ラテラルバイポーラ薄膜トランジスタ、ハイブリッド薄膜トランジスタ、ｍｏｓ薄膜トランジス、及び薄膜トランジスタの製造方法
WO2008099700A1 (ja) * 2007-02-16 2008-08-21 Sharp Kabushiki Kaisha ダブルゲートトランジスタおよびその製造方法ならびにダブルゲートトランジスタを備えるアクティブマトリクス基板
JP2009016667A (ja) * 2007-07-06 2009-01-22 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
JP5574312B2 (ja) * 2008-03-25 2014-08-20 国立大学法人山口大学 多結晶シリコン結晶粒界改質方法及び装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61290769A (ja) * 1985-06-19 1986-12-20 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPS6298774A (ja) * 1985-10-25 1987-05-08 Ricoh Co Ltd 薄膜トランジスタの製造方法
JPH02130913A (ja) * 1988-11-11 1990-05-18 Seiko Epson Corp 薄膜半導体装置
JPH04286335A (ja) * 1991-03-15 1992-10-12 Seiko Epson Corp 薄膜半導体装置の製造方法
JP3181901B2 (ja) * 1994-09-30 2001-07-03 株式会社半導体エネルギー研究所 薄膜トランジスタ
JPH10150202A (ja) * 1996-11-20 1998-06-02 Sharp Corp 薄膜トランジスタ及びその製造方法
JPH10173192A (ja) * 1996-12-09 1998-06-26 Sharp Corp 薄膜トランジスタおよびその製造方法
JP4493750B2 (ja) * 1998-07-15 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000260709A (ja) * 1999-03-09 2000-09-22 Fujitsu Ltd 半導体薄膜の結晶化方法及びそれを用いた半導体装置
JP2000286211A (ja) * 1999-03-31 2000-10-13 Seiko Epson Corp 薄膜半導体装置の製造方法
JP2002110542A (ja) * 2000-09-28 2002-04-12 Toshiba Corp Ｓｉ系半導体薄膜の製造方法、薄膜トランジスタ

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